^Emi-ConaiLctoi ^Pioaucli,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
Analog Switches
Absolute maximum ratings at TA = 25 °CReverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C Storage Temperature Range - 65°C to + 200°C
Dynamic Electrical Characteristics At 25°C free air temperature:
Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current
Gate Source Cutoff Voltage Drain Saturation Current (Pulsed)
V(BR)GDO
'GSS
VGS(OFF)
'DSS
2N5020 Min
25
0.3 -0.3
Max
1 1.5 -1.2
2N5021 Min Max
25
0.5 - 1
1 2.5 -3.5
Unit V ' nA
Process PJ32 Test Conditions
I
G= 1 uA, V
DS= 0V !
VGS = 15V, VDS = 0V
V VDS = -15V, lD = 1nA ; n
mA VDS = -15V,VG S = 0V !
Common Source
Forward Transconductance
Common Source Output Conductance Common Source Input Capacitance Common Source
Reverse Transfer Capacitance
9fs
9os
C|SS
cVss
1 3.5
20 25
7
• — "i — 1.5 6
"•f~ ~"
20
, 2 5J I
7 I _
r
mS
\S „ .
pF
PF
" ' ~ ' ~ " ' ] VDS = -15V,VG S = 0V
VDS = -15V,VG S = 0V
VDS = -15V, VGS = 0V ! f = 1 M H 2
VDS = -15V, VGS = 0V ' f = 1 M H z
—-I
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and packaee dimension, wirh , not.ce mformation furnished by NJ Semi-Conductors is believed to be both accura ""*
press. However NJ Semiconductors assumes no responsibility ^^
Semiconductors encourages customers to verify that datasheets are current before placing ord
