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2N2811

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D na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.SA

ID AMP POWER TRANSISTORS 2N2BT1-2NSS14

TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960

SILICON PLANAR NPN POWER TRANSISTORS

Electrical Specifications (at 25 C unless noted)!

1

Test D.C. Current gain

D.C. Current gain (Note 2) D.C. Current gain (Note 2)

Collector saturation voltage (Note 2) Collector saturation voltage (Note 2) Base saturation voltage (Note 2) Base saturation voltage (Note 2) Collector-emitter sustaining voltage

(Note 2)

Emitter-base breakdown voltage Collector cutoff current

Collector cutoff current, 150°C Collector capacitance

A.C. Current gain (small signal) A.C. Current gain

Rise time | Switching speeds Storage time j Fall time 1

Symbol

"FE hfE

V

CE

(sat) V

CE

(sat) V

BE

(sat) V

BE

(sat)

VCEO (sus)

BVEBO

'CEX 'CEX 0

h,<

t

r

t>

f

2N2811 2N2813 Min. Max.

10 - 20 60 15 -

— 0.5

— 1.5

— 1.2

— 2.0 50 _

8

— 10

— 100

— 350 20 100 1.5 _ __ 200 __ 80 _ 100

2N2812

Min. Max.

10 — 40 120 15 —

— 0.5

— 1.5

— 1.2 - 2.0 70 _

8 -

— 10 - 100 - 350 40 200 1.5 _

_ 150 _ 100 _ 150

Units

V V V V V

v

^A pA Pf

— nsec nsec nsec

Test Conditions lc - 10mA, VCE = 5V lc = 5A, VCE = 5V lc = 10A, VCE = 5V lc — 5A, IB = 500mA lc = 10A, IB = 1A lc = 5A, IB = 500mA lc = 10A, IB = 1A lc = 10mA, IB = 0

IE = 10/iA, lc = 0 VCE = 70V, VEa = .5V

VCE = 60V, VEB = .5V, T = 150°C VC8 = 10V, IE = 0, f = 1MHz lc = 50mA, VCE = 5V, f = 1KHz lc = 1A, VCE = 10V, f - lOmHz (VCC = 3QV

/ lbl = 100mA, Ib2 = —100mA

Nates:

1. The device may be switched between maximum rated collector current and maximum rated collector — emitter voltage along a resistive load line provided the switching time is less than 10 microseconds. Switching at low speed through regions of high instantaneous power dissipation may cause second breakdown to occur, with consequent damage to the device.

2. Pulse length = 300 //sec: duty cycle ;;2%.

tAII values in this table are JEDEC registered.

Absolute Maximum Ratings

TO-61

TO-61

Quality Semi-Conductors

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage D.C. Collector

Current . . Power Dissipation

at 25°C Ambient Temperature Power Dissipation

at 100° C Case Temperature

2N2811 2N2812

80V

50V

8V.

IDA

3W

SOW

2N2813 2N2814

120V

70V

8V 10A

3W

SOW

Operating and Storage

Temperature Range -65 to 200-C

Cytaty

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