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SGS110

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SGS-THOMSON

TIP/SGS115-116-117

POWER DARLINGTONS

INSCRIPTION

~-e TIP110, TIP111, TIP112 and SGS110, : 3S111, SGS112 are silicon epitaxial-base NPN snsistors in monolithic Darlington configuration rspectively in TO-220 and SOT-82 plastic rackage. They are intended for use in medium po-

•er linear and switching applications. The comple- - sntary PNP types are the TIP115, TIP116, TIP117 and SGS115, SGS116, SGS117 respectively.

STERNAL S CHEM ATIC DIAGRAMS

ABSOLUTE MAXIMUM RATINGS

V a l u e

N P N T I P 1 1 0 T I P 1 11 T I P 1 1 2

S y m b o l P a r a m e t e r N Pn S G S 1 1 0 S G S 1 1 1 S G S 1 1 2 U n it

P N P T I P 1 1 5 T I P 1 1 6 T I P 1 1 7 P N P S G S 1 1 5 S G S 1 1 6 S G S 1 1 7

VcBO Collector-base Voltage ( Ie = 0 ) 60 80 100 V

VcEO Collector-emitter Voltage (Ib= 0) 60 80 100 V

Ve b o Emitter-base Voltage (lc = 0) 5 V

lc Collector Current 2 A

IcM Collector Peak Current 4 A

Ib Base Current 50 mA

P tot Total Power Dissipation at Tease < 25 °C 50 W

T amb — 25°C 2 W

Tstg Storage Temperature 65 to 150 °C

T| Junction Temperature 150 °C

-o r PNP types voltage and current values are negative.

'.ovember 1988 1/5

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THERMAL DATA

R th j-case Thermal Resistance Junction-case Max 2.5 “C/W

R th j-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U ni t

ICEO Collector Cutoff Current

Os = 0 ) Vce = Half Rated V0eo 2 mA

ICBO Collector Cutoff Current

( Ie = 0) Vcb = Rated Vcbo 1 mA

Iebo Emitter Cutoff Current

( l c = 0 ) Veb = 5 V 2 mA

VcEO(sus) Collector-emitter Sustaining lc = 30 mA

Voltage (Ib = 0) for T I P / S G S 1 10 and T I P / S G S 1 15 60 V

for T I P / S G S 1 11 and T I P / S G S 1 1 6 80 V

for T I P / S G S 1 12 and T I P / S G S 1 1 7 100 V

VcE(sat)* Collector-emitter Saturation

Voltage lc = 2 A Ib = 8 mA 2.5 V

Vb e* Base-emitter Voltage l c = 2 A VCE = 4 V 2.8 V

h FE* DC current Gain o II > <o m II < 1000

lc = 2 A VCe = 4 V 500 Pulsed : pulse duration * 300 ps, duty cycle < 2 %.

For PNP types voltage and current values are negative.

Safe Operating Areas.

G-S2S7

DC Current Gain (NPN types).

2/5 { Z T SGS-THOMSON

SMOBBMBTIRBMCS

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:C Current Gain (NPN types).

6 *763

Base-emitter Saturation Voltage (NPN types).

G - * 7 6 6

v B E ( i i ! > — ■ —

( V )

1 (

h F E = i 5 0

, 7 * S I I 4 . 9

10 t JC(A)

DC Current Gain (PNP types).

Base-emitter Voltage (NPN types).

VBE ( V ) 1

l C ( A )

Base-emitter Voltage (PNP types).

5 7 SGS-THOMSON MffiRW&SCTFSSES*

3/5

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Base-emitter Saturation Voltage (PNP types). Collector-emitter Saturation Voltage (NPN types).

Collector-emitter Saturation Voltage (NPN types). Collector-emitter Saturation Voltage (PNP types).

Collector-emitter Saturation Voltage (PNP types). Collector Cutoff Current (NPN types).

4/5

r S T SGS-THOMSON

“ • ' I MiBBSaUiCTS®***

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Collector Cutoff Current (NPN types).

Capacitances (PNP types).

Saturated Switching Characteristics (PNP types).

Capacitances (NPN types).

6 - * 75 4H

Saturated Switching Characteristics (NPN types).

f ; 7 SGS-THOMSON 5/5

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