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SD1456

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TV/LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS

. 400 x .425 8LFL (M168) epoxy sealed

. 170 - 230 MHz

. 28 VOLTS

. CLASS AB PUSH PULL

. DESIGNED FOR HIGH POWER LINEAR OPERATION

. HIGH SATURATED POWER CAPABILITY

. GOLD METALLIZATION

. DIFFUSED EMITTER BALLAST RESISTORS

. COMMON EMITTER CONFIGURATION

. P

OUT

= 100 W MIN. WITH 11.0 dB GAIN

DESCRIPTION

The SD1456 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and trans- posers.

PIN CONNECTION

BRANDING TCC3100 ORDER CODE

SD1456

ABSOLUTE MAXIMUM RATINGS (T case = 25°C)

Symbol Parameter Value Uni t

V

CBO

Collector-Base Voltage 65 V

1. Collector 3. Base

2. Emitter

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ELECTRICAL SPECIFICATIONS (T case = 25°C)

Symbol Test Conditi ons Value

Uni t Min. Typ. Max.

P

OUT

f = 225 MHz V

CE

= 28 V I

C

= 2 x 100 mA 100 — — W G

P

P

OUT

= 100 W V

CE

= 28 V I

C

= 2 x 100 mA 11 — — dB

ηc P

OUT

= 100 W V

CE

= 28 V I

C

= 2 x 100 mA 70 — — %

C

OB

f = 1 MHz V

CB

= 28 V — 60 — pF

STATIC

Symbol Test Conditions Value

Unit Min. Typ. Max.

BV

CBO

I

C

= 50mA I

E

= 0mA 65 — — V

BV

CER

I

C

= 50mA R

BE

= 15 Ω 60 — — V

BV

CEO

I

C

= 50mA I

B

= 0mA 33 — — V

BV

EBO

I

E

= 5mA I

C

= 0mA 3.5 — — V

h

FE

V

CE

= 5V I

C

= 500mA 20 — 150 —

DYNAMIC (Class AB)

TYPICAL PERFORMANCE

POWER OUTPUT vs POWER INPUT

BROADBAND POWER GAIN vs FREQUENCY

DYNAMIC (Class A)

Symbol Test Conditi ons Value

Uni t Min. Typ. Max.

P

OUT

* f = 225 MHz V

CE

= 28 V I

C

= 2 x 2.5 A 28 32 — W G

P

* P

IN

= 1.1 W V

CE

= 28 V I

C

= 2 x 2.5 A 14 15 — dB IMD

3

* P

IN

= 1.1 W V

CE

= 28 V P

REF

= 28 W — − 51 — dB

N ote: * Class A Perfor mance Char act eristi cs Indi cate Capabilit y but ar e not Tested.

IMD3 - 3 T one Meaur ement;

8,

7,

16dB r elative to PREF

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IMPEDANCE DATA

FREQ. Z

IN

( Ω ) Z

OUT

( Ω ) 170 MHz 1.3 + j 0.6 9.5 − j 10.0 200 MHz 1.0 + j 1.0 9.0 − j 8.0 230 MHz 0.9 + j 1.8 6.3 − j 6.5 INTERMODULATION DISTORTION vs

POWER OUTPUT

COLLECTOR EFFICIENCY vs FREQUENCY

TYPICAL PERFORMANCE (cont’d)

(4)

IMPEDANCE DATA

FREQ. Z

IN

( Ω ) Z

OUT

( Ω ) 170 MHz 1.05 + j 0.65 13.5 − j 9.0 200 MHz 0.9 + j 1.1 11.0 − j 6.5 230 MHz 1.25 + j 1.8 9.5 − j 7.7 V

CE

= 28 V

I

CQ

= 2 x 2.5 A

Class A

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PACKAGE MECHANICAL DATA

Ref.: Dwg. No.12-0168

Cytaty

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