RSB6.8S
Diodes
ESD Protection diode
RSB6.8S
!Application
Noise suppression on signal line
!Features
1) Small surface mounting type. (EMD2) 2) High reliability.
!Construction Silicon epitaxial planar
!Circuit
!
! !
!External dimensions (Units : mm)
ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523
1.6±0.1 1.2±0.05
0.8±0.05
0.6±0.1 0.12±0.05 0.3±0.05
F7
!
! !
!Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Limits
10
Unit
W
Tj
150 mW
Tstg
150 °C
P
−55∼+150 °C
Topr −55∼+150 °C
Peak pulse power Ppk (tp=10×1000µs) Power dissipation Junction temperature Storage temperature Operation temperature
! ! !
!Electrical characteristics (Ta=25 °C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VZ
IR
5.780
−
−
−
7.820 0.5
V µA
IZ=1mA VR=3.5V
Ct − 30 − pF VR=0V, F=1MHz
Zener voltage Reverse current Junction capacitance
∗Zener voltage (Vz) shall be measured at 40ms after loading current.
RSB6.8S
Diodes
! ! !
!Others
Item IEC-61000-4-2 Charge discharge capacitance Discharge resistamce Repeat by 10 times No erroneous operation Contact
In air
: ±8kV : ±15kV : 150pF : 330Ω Equipment composition
Criterion
!
! !
!Electrical characteristic curves (Ta=25 °C)
0 1 2 3 4 5 6 7
10 100
1
CAPACITANCE BETWEEN TERMINALS : Ct (pF) REVERSE VOLTAGE : VR (V)
Fig.1 Capacitance between terminals characteristics
0.1 1 10
10 100
1 REVERSE SURGE POWER DISSIPATION : PRSM (W)
PULSE WIDTH : TW (ms)
Fig.2 Surge power dissipation
