MCC 56 MCD 56

© 2004 IXYS All rights reserved 1 - 4

MCC 56 MCD 56

419

Symbol Conditions Maximum Ratings

I_TRMS, I_FRMS T_VJ = T_VJM 100 A

I_TAVM, I_FAVM T_C = 83°C; 180° sine 64 A

TC = 85°C; 180° sine 60 A

I_TSM, I_FSM T_VJ = 45°C; t = 10 ms (50 Hz), sine 1500 A

V_R = 0 t = 8.3 ms (60 Hz), sine 1600 A

TVJ = TVJM t = 10 ms (50 Hz), sine 1350 A

V_R = 0 t = 8.3 ms (60 Hz), sine 1450 A

∫∫∫∫∫i²dt T_VJ = 45°C t = 10 ms (50 Hz), sine 11 200 A²s V_R = 0 t = 8.3 ms (60 Hz), sine 10 750 A²s T_VJ = T_VJM t = 10 ms (50 Hz), sine 9100 A²s V_R = 0 t = 8.3 ms (60 Hz), sine 8830 A²s (di/dt)_cr T_VJ = T_VJM repetitive, I_T = 150 A 150 A/µs

f =50 Hz, tP = 200 µs V_D = ²/₃ V_DRM

I_G = 0.45 A non repetitive, I_T = I_TAVM 500 A/µs di_G/dt = 0.45 A/µs

(dv/dt)_cr T_VJ = T_VJM; V_DR = ²/₃ V_DRM 1000 V/µs R_GK = ∞; method 1 (linear voltage rise)

P_GM T_VJ = T_VJM; t_P = 30 µs 10 W

IT = ITAVM; tP = 300 µs 5 W

P_GAV 0.5 W

V_RGM 10 V

T_VJ -40...+125 °C

T_VJM 125 °C

T_stg -40...+125 °C

VISOL 50/60 Hz, RMS; t = 1 min 3000 V~

I_ISOL≤ 1 mA; t = 1 s 3600 V~

M_d Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Weight Typical including screws 90 g

I

= 2x100 A I

= 2x64 A V

= 800-1800 V

Thyristor Modules

Thyristor/Diode Modules

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

Features

• International standard package, JEDEC TO-240 AA

• Direct copper bonded Al₂O₃ -ceramic base plate

• Planar passivated chips

• Isolation voltage 3600 V~

• UL registered, E 72873

• Gate-cathode twin pins for version 1B

Applications

• DC motor control

• Softstart AC motor controller

• Light, heat and temperature control

Advantages

• Space and weight savings

• Simple mounting with two screws

• Improved temperature and power cycling

• Reduced protection circuits 67

45 3

2 1 TO-240 AA V_RSM V_RRM Type

V_DSM V_DRM

V V Version 1 B 8 B Version 1 B 8 B

900 800 MCC 56-08 io1 B / io8 B MCD 56-08 io1 B / io8 B 1300 1200 MCC 56-12 io1 B / io8 B MCD 56-12 io1 B / io8 B 1500 1400 MCC 56-14 io1 B / io8 B MCD 56-14 io1 B / io8 B 1700 1600 MCC 56-16 io1 B / io8 B MCD 56-16 io1 B / io8 B 1900 1800 MCC 56-18 io1 B / io8 B MCD 56-18 io1 B / io8 B

3 1 5 4 2

MCD Version 1 B

MCC Version 8 B

3 6 1 5 2

MCD Version 8 B

3 1 5 2

MCC Version 1 B

3 6 7 1 5 4 2

© 2004 IXYS All rights reserved 2 - 4

MCC 56 MCD 56

419

Symbol Conditions Characteristic Values

I_RRM, I_DRM T_VJ = T_VJM; V_R = V_RRM; V_D = V_DRM 5 mA

V_T, V_F I_T/I_F = 200 A; T_VJ = 25°C 1.57 V

V_T0 For power-loss calculations only (T_VJ = 125°C) 0.85 V

r_T 3.7 mΩ

VGT VD = 6 V; TVJ = 25°C 1.5 V

T_VJ = -40°C 1.6 V

I_GT V_D = 6 V; T_VJ = 25°C 100 mA

T_VJ = -40°C 200 mA

V_GD T_VJ = T_VJM; V_D = ²/₃ V_DRM 0.2 V

IGD 10 mA

I_L T_VJ = 25°C; t_P = 10 µs; V_D = 6 V 450 mA

I_G = 0.45 A; di_G/dt = 0.45 A/µs

I_H T_VJ = 25°C; V_D = 6 V; R_GK = ∞ 200 mA

t_gd T_VJ = 25°C; V_D = ½ V_DRM 2 µs

IG = 0.45 A; diG/dt = 0.45 A/µs

t_q T_VJ = T_VJM; I_T = 150 A, t_P = 200 µs; -di/dt = 10 A/µs typ. 150 µs V_R = 100 V; dv/dt = 20 V/µs; V_D = ²/₃ V_DRM

Q_S T_VJ = T_VJM; I_T, I_F = 50 A, -di/dt = 3 A/µs 100 µC

I_RM 24 A

RthJC per thyristor/diode; DC current 0.45 K/W

per module other values 0.225 K/W

R_thJK per thyristor/diode; DC current see Fig. 8/9 0.65 K/W

per module 0.325 K/W

d_S Creepage distance on surface 12.7 mm

dA Strike distance through air 9.6 mm

a Maximum allowable acceleration 50 m/s²

Optional accessories for module-type MCC 56 version 1 B

Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385,

Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")

MCC / MCD / MDC Version 1 B MCC Version 8 B MCD Version 8 B

10 100 1000

1 10 100 1000

10⁰ 10¹ 10² 10³ 10⁴

0.1 1 10

I_G V_G

mA

mA I_G 1: I_GT, T_VJ = 125°C

2: I_GT, T_VJ = 25°C 3: I_GT, T_VJ = -40°C

µs t_gd

V

4: P_GAV = 0.5 W 5: P_GM = 5 W 6: P_GM = 10 W I_GD, T_VJ = 125°C

3

4 2 1

5 6

Limit typ.

T_VJ = 25°C

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time

Version 1 or 8 without B in typ designation = without insert in mountig holes

© 2004 IXYS All rights reserved 3 - 4

MCC 56 MCD 56

419

Fig. 3 Surge overload current I_TSM, I_FSM: Crest value, t: duration

Fig. 4 ∫i²dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature

Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct output current and ambient temperature

© 2004 IXYS All rights reserved 4 - 4

MCC 56 MCD 56

419

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS output current and ambient temperature

Fig. 8 Transient thermal impedance junction to case (per thyristor or diode)

Fig. 9 Transient thermal impedance junction toheatsink(perthyristor or diode)

R_thJK for various conduction angles d:

d R_thJK (K/W)

DC 0.65

180° 0.67

120° 0.69

60° 0.705

30° 0.72

Constants for ZthJK calculation:

i R_thi (K/W) t_i (s)

1 0.014 0.015

2 0.026 0.0095

3 0.41 0.175

4 0.2 0.67

Constants for Z_thJC calculation:

i R_thi (K/W) t_i (s)

1 0.014 0.015

2 0.026 0.0095

3 0.41 0.175

R_thJC for various conduction angles d:

d R_thJC (K/W)

DC 0.45

180° 0.47

120° 0.49

60° 0.505

30° 0.52