TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS05
Switching Mode Power Supply Applications Portable Equipment Battery Applications
· Forward voltage: VFM = 0.45 V (max)
· Average forward current: IF (AV) = 1.0 A
· Repetitive peak reverse voltage: VRRM = 30 V
· Repetitive peak reverse current: IRRM = 5 µA (max) @VRRM = 5 V
· Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name)
Maximum Ratings (Ta ==== 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 30 V IF(AV)
(Note 1)
1.0 (Ta = 102°C) Average forward current
IF(AV) (Note 2)
1.0 (Ta = 54.7°C)
A
Peak one cycle surge forward current
(non-repetitive) IFSM 30 (50 Hz) A
Junction temperature Tj -40~150 °C
Storage temperature Tstg -40~150 °C
Note 1: Device mounted on a ceramic board (board size: 50 mm ´ 50 mm, soldering land: 2 mm ´ 2 mm) Note 2: Device mounted on a glass-epoxy board (board size: 50 mm ´ 50 mm, soldering land: 6 mm ´ 6 mm)
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A Weight: 0.013 g (typ.)
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM (1) IFM= 0.1 A ¾ 0.33 ¾
VFM (2) IFM= 0.7 A ¾ 0.40 ¾
Peak forward voltage
VFM (3) IFM= 1.0 A ¾ 0.42 0.45
V
IRRM (1) VRRM= 5 V ¾ 2.0 5.0
Repetitive peak reverse current
IRRM (2) VRRM= 30 V ¾ 20 200 mA
Junction capacitance Cj VR= 10 V, f = 1.0 MHz ¾ 60 ¾ pF
Device mounted on a ceramic board
(soldering land: 2 mm ´ 2 mm) ¾ ¾ 70 Thermal resistance Rth (j-a) Device mounted on a glass-epoxy
board
(soldering land: 6 mm ´ 6 mm)
¾ ¾ 140
°C/W
Marking Following Indicates the Date of
Manufacture
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes are having large-reverse current-leakage characteristic compare to the other rectifier products.This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Cathode mark Type Code
Lot No.
S5 Month of manufac- ture
January to December are denoted by letter A to L respectively.
Year of manufac- ture
Last decimal digit of the year of manufacture
2.8 1.2
1.2
Unit: mm
0 1 2 3 4
5 6 7 8 9
60
0 20 40 80 100 120 140 160
0.2
0 0.4 0.6 1.0 0.8 1.4 1.2 1.6 DC
a = 180°
a = 120°
a = 60°
Conduction angle: a VR = 15 V
360°
0° a
IF(AV) Rectangular
waveform
Device mounted on a ceramic board (board size: 50 mm ´ 50 mm)
0.2
0 0.4 0.6 1.0 1.2
180
60
0 20 40 80 100
0.8 1.4 1.6
120 140 160
DC
a = 180°
a = 120°
a = 60°
Device mounted on a glass-epoxy board (soldering land: 6 mm ´ 6 mm)
Conduction angle: a VR = 15 V 360°
0° a
IF(AV) Rectangular waveform Instantaneous forward voltage vF (V)
iF – vF
Instantaneous forward current iF (A)
Average forward current IF (AV) (A) PF (AV) – IF (AV)
Average forward power dissipation PF (AV) (W)
Average forward current IF (AV) (A) Ta max – IF (AV)
Maximum allowable ambient temperature Ta max (°C)
Average forward current IF (AV) (A) Ta max – IF (AV)
Maximum allowable ambient temperature Ta max (°C)
rth (j-a) – t
hermal impedance a) (°C/W)
Surge forward current
(non-repetitive)
ard current IFSM (A)
0 0.2 0.1 0.2 0.3 0.4 0.5 0.6
0.4 0.6 0.8 1.0 1.2
0 1.4 1.6
120°
180°
DC
a = 60°
360°
0° a Rectangular
waveform
Conduction angle: a
16 28
20 24
12
Ta = 25°C f = 50 Hz 10
0 0.3 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.1
1
0.9 125°C
Tj = 150°C
75°C 25°C
100
1000 ① Device mounted on a ceramic board:
Soldering land: 2 mm ´ 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm ´ 6 mm
②
①
0 20 40 60 80 100 120 100
1
0.001 0.01 10
140 Pulse test
VR = 30 V
20 V
10 V 5 V
15 V 0.1
160
Junction temperature Tj (°C) IR – Tj (typ.)
Repetitive peak reverse current
I R (mA)
Reverse voltage VR (V) PR (AV) – VR (typ.)
Average reverse power dissipation PR (AV) (W)
Reverse voltage VR (V) Cj – VR (typ.)
Junction capacitance Cj (pF)
0.3
0.0 0.1 0.2 0.4 0.5 0.6 0.7 0.8
0 10 20 30 60°
120°
180°
240°
300°
DC 360°
0°
VR
Rectangular waveform
Conduction angle: a Tj = 150°C
30
1 100 1000
300 500
50
3 10 5 50 30 100
f = 1 MHz Ta = 25°C
10
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