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TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

CRS05

Switching Mode Power Supply Applications Portable Equipment Battery Applications

· Forward voltage: VFM = 0.45 V (max)

· Average forward current: IF (AV) = 1.0 A

· Repetitive peak reverse voltage: VRRM = 30 V

· Repetitive peak reverse current: IRRM = 5 µA (max) @VRRM = 5 V

· Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name)

Maximum Ratings (Ta ==== 25°C)

Characteristics Symbol Rating Unit

Repetitive peak reverse voltage VRRM 30 V IF(AV)

(Note 1)

1.0 (Ta = 102°C) Average forward current

IF(AV) (Note 2)

1.0 (Ta = 54.7°C)

A

Peak one cycle surge forward current

(non-repetitive) IFSM 30 (50 Hz) A

Junction temperature Tj -40~150 °C

Storage temperature Tstg -40~150 °C

Note 1: Device mounted on a ceramic board (board size: 50 mm ´ 50 mm, soldering land: 2 mm ´ 2 mm) Note 2: Device mounted on a glass-epoxy board (board size: 50 mm ´ 50 mm, soldering land: 6 mm ´ 6 mm)

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 3-2A1A Weight: 0.013 g (typ.)

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Characteristics Symbol Test Condition Min Typ. Max Unit

VFM (1) IFM= 0.1 A ¾ 0.33 ¾

VFM (2) IFM= 0.7 A ¾ 0.40 ¾

Peak forward voltage

VFM (3) IFM= 1.0 A ¾ 0.42 0.45

V

IRRM (1) VRRM= 5 V ¾ 2.0 5.0

Repetitive peak reverse current

IRRM (2) VRRM= 30 V ¾ 20 200 mA

Junction capacitance Cj VR= 10 V, f = 1.0 MHz ¾ 60 ¾ pF

Device mounted on a ceramic board

(soldering land: 2 mm ´ 2 mm) ¾ ¾ 70 Thermal resistance Rth (j-a) Device mounted on a glass-epoxy

board

(soldering land: 6 mm ´ 6 mm)

¾ ¾ 140

°C/W

Marking Following Indicates the Date of

Manufacture

Standard Soldering Pad

Handling Precaution

Schottky barrier diodes are having large-reverse current-leakage characteristic compare to the other rectifier products.This current leakage and improper operating temperature or voltage may cause thermal runaway.

Please take forward and reverse loss into consideration when you design.

Cathode mark Type Code

Lot No.

S5 Month of manufac- ture

January to December are denoted by letter A to L respectively.

Year of manufac- ture

Last decimal digit of the year of manufacture

2.8 1.2

1.2

Unit: mm

0 1 2 3 4

5 6 7 8 9

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60

0 20 40 80 100 120 140 160

0.2

0 0.4 0.6 1.0 0.8 1.4 1.2 1.6 DC

a = 180°

a = 120°

a = 60°

Conduction angle: a VR = 15 V

360°

a

IF(AV) Rectangular

waveform

Device mounted on a ceramic board (board size: 50 mm ´ 50 mm)

0.2

0 0.4 0.6 1.0 1.2

180

60

0 20 40 80 100

0.8 1.4 1.6

120 140 160

DC

a = 180°

a = 120°

a = 60°

Device mounted on a glass-epoxy board (soldering land: 6 mm ´ 6 mm)

Conduction angle: a VR = 15 V 360°

a

IF(AV) Rectangular waveform Instantaneous forward voltage vF (V)

iF – vF

Instantaneous forward current iF (A)

Average forward current IF (AV) (A) PF (AV) – IF (AV)

Average forward power dissipation PF (AV) (W)

Average forward current IF (AV) (A) Ta max – IF (AV)

Maximum allowable ambient temperature Ta max (°C)

Average forward current IF (AV) (A) Ta max – IF (AV)

Maximum allowable ambient temperature Ta max (°C)

rth (j-a) – t

hermal impedance a) (°C/W)

Surge forward current

(non-repetitive)

ard current IFSM (A)

0 0.2 0.1 0.2 0.3 0.4 0.5 0.6

0.4 0.6 0.8 1.0 1.2

0 1.4 1.6

120°

180°

DC

a = 60°

360°

a Rectangular

waveform

Conduction angle: a

16 28

20 24

12

Ta = 25°C f = 50 Hz 10

0 0.3 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.1

1

0.9 125°C

Tj = 150°C

75°C 25°C

100

1000 Device mounted on a ceramic board:

Soldering land: 2 mm ´ 2 mm

Device mounted on a glass-epoxy board:

Soldering land: 6 mm ´ 6 mm

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0 20 40 60 80 100 120 100

1

0.001 0.01 10

140 Pulse test

VR = 30 V

20 V

10 V 5 V

15 V 0.1

160

Junction temperature Tj (°C) IR – Tj (typ.)

Repetitive peak reverse current

I R (mA)

Reverse voltage VR (V) PR (AV) – VR (typ.)

Average reverse power dissipation PR (AV) (W)

Reverse voltage VR (V) Cj – VR (typ.)

Junction capacitance Cj (pF)

0.3

0.0 0.1 0.2 0.4 0.5 0.6 0.7 0.8

0 10 20 30 60°

120°

180°

240°

300°

DC 360°

VR

Rectangular waveform

Conduction angle: a Tj = 150°C

30

1 100 1000

300 500

50

3 10 5 50 30 100

f = 1 MHz Ta = 25°C

10

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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

000707EAA

RESTRICTIONS ON PRODUCT USE

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