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TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS11
Switching Mode Power Supply Applications Portable Equipment Battery Applications
· Forward voltage: VFM = 0.36 V (max)
· Average forward current: IF (AV) = 1.0 A
· Repetitive peak reverse voltage: VRRM = 30 V
· Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name)
Maximum Ratings (Ta ==== 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 1.0 (Note) A Peak one cycle surge forward current
(non-repetitive) IFSM 20 (50 Hz) A
Junction temperature Tj -40~125 °C
Storage temperature Tstg -40~150 °C
Note : Tℓ = 98.7°C: Rectangular waveform (a = 180°C), VR= 15 V
Electrical Characteristics (Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM (1) IFM= 0.1 A ¾ 0.20 ¾
VFM (2) IFM= 0.7 A ¾ 0.30 ¾
Peak forward voltage
VFM (3) IFM= 1.0 A ¾ 0.32 0.36
V
IRRM (1) VRRM= 5 V ¾ 0.06 ¾
Repetitive peak reverse current
IRRM (2) VRRM= 30 V ¾ 0.6 1.5 mA
Junction capacitance Cj VR= 10 V, f = 1.0 MHz ¾ 60 ¾ pF
Device mounted on a ceramic board
(soldering land: 2 mm ´ 2 mm) ¾ ¾ 70 Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy
board
(soldering land: 6 mm ´ 6 mm)
¾ ¾ 140
°C/W
Thermal resistance (junction to lead) Rth (j-ℓ) ¾ ¾ ¾ 20 °C/W Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A Weight: 0.013 g (typ.)
Manufacture
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Cathode mark Type Code
Lot No.
SA Month of manufac- ture
January to December are denoted by letter A to L respectively.
Year of manufac- ture
Last decimal digit of the year of manufacture
0 1 2 3 4
5 6 7 8 9
2.8 1.2
1.2
Unit: mm
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1 10 100 1000
10 100 1000 10000 100000
②
①
① Device mounted on a ceramic board:
Soldering land: 2 mm ´ 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm ´ 6 mm
1 140
60
0 20 40 80 100 120
0.2
0 0.4 0.6 1.0 0.8 1.2 1.4 1.6 DC
a = 180°
a = 120°
360°
0° a
IF(AV)
Device mounted on a ceramic board (board size: 50 mm ´ 50 mm)
Conduction angle: a VR = 15 V Rectangular waveform
Instantaneous forward voltage vF (V) iF – vF
Instantaneous forward current iF (A)
Average forward current IF (AV) (A) PF (AV) – IF (AV)
Average forward power dissipation PF (AV) (W)
Average forward current IF (AV) (A) Ta max – IF (AV)
Maximum allowable lead temperature Ta max (°C)
Average forward current IF (AV) (A) Tℓ max – IF (AV)
Maximum allowable lead temperature Tℓ max (°C) 10
0 0.3 0.1 0.2 0.4 0.5 0.6 0.7 0.8 0.1
1
0.9 125°
75°C
Tj = 25°C
rth (j-a) – t
Time t (ms) Transient thermal impedance rth (j-a) (°C/W)
0 0.2 0.1 0.2 0.3 0.4 0.5 0.6
0.4 0.6 0.8 1.0 1.2
0 1.4 1.6
120° 180°
DC
a = 60°
360°
0° a Rectangular
waveform
Conduction angle: a
0 140
0.2
0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 360°
0° a
IF(AV) 60
20 40 80 100 120
DC
a = 180°
a = 60°
Rectangular waveform
Conduction angle: a VR = 15 V
a = 120°
0 20 40 60 80 100 120 1000
10
0.01 0.1 100
140 Pulse test
VR = 30 V
20 V
10 V 5 V 15 V 1
160
Reverse voltage VR (V) PR (AV) – VR (typ.)
Average reverse power dissipation PR (AV) (W) Number of cycles
Surge forward current (non-repetitive)
Peak surge forward current IFSM (A)
Junction temperature Tj (°C) IR – Tj (typ.)
Reverse current IR (mA)
Reverse voltage VR (V)
Cj – VR (typ.)
Junction capacitance Cj (pF)
1 100 1000
10 100 f = 1 MHz
Ta = 25°C
10
1 100 10
0 8 16 28
20 24
4 12
Ta = 25°C f = 50 Hz
1.2
0.0 0.4 0.8 1.6 2.0 2.4 2.8 4.8
0 10 20 30 60°
120°
180°
240°
300°
DC 3.2
3.6 4.0
4.4 0° 360°
VR
Rectangular waveform
Conduction angle: a Tj = 125°C
a
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In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
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