, U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
JL BFS22A
V.H.F. POWER TRANSISTOR
N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran- sistor Is tested under severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a TO-39 metal envelope with the collector connected to the case.
QUICK REFERENCE DATA
R.F. performance up to Tmt, » 25 °C in an unneutralized common-emitter class-B circuit
mode of operation
c.w.
c.w.
VCE
V13,5 12,5
f MHz 175 175
PL w
4 4
GP dB
> 8 typ.8
i?
%
> 60 typ. 60
Z|
SI 3,9 + J2,2
—
VI mS 37 - j22
—
MECHANICAL DATA
Fig.1 TO-39/1; collector connected to case.
Dimensions in mm
-»H
\e
•«.,« - mm
Maximum lead diameter is guaranteed only for 12,7 mm.
Accessories: 56245 (distance disc).
.Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice
Int'nrmution lurrmhtd by NJ Somi-C unduclort n believed to he hold accurate ami reliable .it the lime of guing to press. However M - esptnuibility fat my errors or omissions discovered in its use M Scim-iuiKltiUi rs cr
Fit vrrift 'h.M tt:iM-;ht'^t« ir^ . tirn'nt heriire nlncinv unf^n
BFS22A
ICEO 5 mA
V(BR)CBO >
V(BR)CEO >
V(BR)EBO >
36 V
18 V
4 V
E E
0.5 mS 0.5 mS
f
Ttyp. 700 MHz
typ. 15 pF
< 20 pF
-C
retyp. 11 pF
V.H.F. power transistor
CHARACTERISTICS
Tj = 25°C unless otherwise specified Collector cut-off current
IB
a0; VCE = 14V Breakdown voltages Collector -base voltage
open emitter, Ic = 1 niA Collector -emitter voltage
open base, Ic = 10 mA Emitter -base voltage
open collector, IE = 1 niA Transient energy
L = 25 mH; f = 50 Hz
open base
D. C. current gain
I
c= 500 mA; VCE = 5 V Transition frequency
I
C= 350 mA; VCE = 10 V
Collector capacitance at f = 1 MHz IE = Ie = 0; VcB = 15 V
Feedback capacitance at f = 1 MHz
1C = 50 mA; VCE - IS V
BFS22A
RATINGS Limitiag values in accordance with the Absolute Maximum System (IEC 134) Collector -base voltage (open emitter) VcBOM max. 36 V
peak value
Collector -emitter voltage (open base) Emitter -base voltage (open collector) Collector current (average)
Collector current (peak value) f > 1 MHz Total power dissipation up to
(> 1 MHz
= 25 °C
10
PM (Wl
7.S
2.5
-h .1 -h
.short tlrtio_
operation V.,S.WR>3"
^
V.
k
^
11
-h l
^
&\
P
irmal op*i S.W.R.O
ft
*<
v
at
*\n VCE « 16-- 1 >1MHz
**\ (•
V
SO 100Tmb(°C) 150
Storage temperature
Operating junction temperature
THERMAL RESISTANCEFrom junction to mounting base From mounting base to heatsinfc
with a boron nitride washer for electrical insulation
VCEO VEBO
r
C(AV)
ICM
Ptot
max.
max.
max.
max.
max.
18 4 0.75 2.25
8
7Z60973
V V A A
W
(AC) 0.7 0.6
0.5
OA
0.3
0.2
ni
D.C.SOAR |
v
VL
\C
\
5 6 7 8 9 10 Vce (V) 20
stg
