Tranzistory. Čast' 1; Tranzystory małej mocy, wysokiej częstotliwości - Digital Library of the Silesian University of Technology

T P A H 3 M C T 0 P b l M AJI OM MOU^HOCTM BblCOKOM H A C T O T b l

L O W - P O W ER H IG H - F R E Q U E N C Y

T R A N S I S T O R S

T p a H 3 M C T O p b l M c m o ii M O L H H O C T M B b lC O K O M H O C T O T b l

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

O B L L I H E C B E f l E H U f l

TepMaHHeBbie An4>tt5y3HOHHble p-n-p TpaHSHcropbi rT 3 0 5 A ...

IT305B npeflH03HaHeHbi Ana paôoTbi a Mafiora6apMTHbix cxeMax paflHoannapaTypbi LUMpoKoro npnMeHeHHA.

OcfjopnneHHe — b MSTan/iHMecKOM repMCTHMHOM Kopnyce.

TeMncpaTypa OKpywatouueii cpeAbi ot — 60 a o +60 °C . Macca TpanoHCTopa He 6onee 0,5 r.

G E N E R A L

G erm anium diffused p-n-p transistors T T3 05A .. .TT305B are designed for use in miniature circuits of radio equipment of wide application.

Mounting — in a metal sealed case.

Ambient temperature — from —60 to + 6 0 ° C.

Transistor mass — 0.5 g, max.

O C H O B H b l E T E X H U M E C K H E f l A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 n e K T p M H e c K H e n a p a n e T p b i

E l e c t r ic a l P a r a m e t e r s

r ia p a M C T p b i 0 6 0 3 H 0 M e H H R

3 n a M e H H M V alu e

PeMMMbl M3MCpCH H B M easuring conditions

Pa ra m e te r Designation

He MeHee min

He 6onee m ax

Ü C B i U 'E B .

V 1E. mA f. M H z

Tok KOjineKTopa3aKpbrroroTpaH3HCTopa, mkA C o lle c lo r c u rre n t of off-transistor, f j A

(C E V - ⁶ 15; 0,5*

O SpaTH biii to k , mkA:

Reverse cu rren t, / iA :

3M HTTepa em itter

( E B O

TT305A TT305B TT305B

— 30

30 30

1,5*

1.5*

0,5*

—

KonneKTopa co llecto r

TT305B

^ C B O

4 15

CTaTHHeCKHM k03(()4>muweht nepeAaMM TOKO Static curren t-tran sfer ra tio

TT305A TT3055

h 21E

25 60

80 180

1 10

-

Ko34>4>MUMeHT n e p e A a M H t o k o b p e w H M e M anoro cwrHana bcxeMe c o6i h m m 3mM T T epoM C u rren t-tran sfe r ra tio fo r com m on-em itter circu it u nd er w e a k signal conditions

IT 3 0 5 B

h 21e

40 120 5 5

M o ayjib K034>4>HL>H e H T a nepeAaMM to k o H a B b i c o K O i i ha c T O T e

Modulus of curren t-tran sfer ra tio at ^{h i g h} frequency

TT305A rT305E, rT305B

h 21e

7 8

5 10 20

78

T

Manoii

L o w - Po w er H ig h - Freq u en cy T ra n sisto rs

r i p e f l e / i b H b i e 3 H a M e H i i s f l o n y c T M M b t x p e > K Mm o b 3 K c n n y a T a i 4 n n

M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s lamb = — 60. . . +60 ° C

V o ltag e, V : 15

HanpaweHMe, B :

ne>KAy KonneKTopoM m 6a3oii Uc b mali Me>KAy KO/ineKTOpOM M 3 M HTTepOM l/CE max

(U BE = 0,5 V ) 15

MeWAy 3MMTTepOM M 6a30M U EB max

rT305A, rT3056 1,5

TT305B 0,5

Tok KonneKTopa, mA :

n o c T O f l H H b l i i Ic m a x ' ^

HMnynbCHbi« /CMmox2 100

MoujHocTb ho KonneKTope Pcm ax3' mBt ^5

TeM nepaTypa nepexoA a fj max, ° C 85

TennoBoe c o n p o T M B n e H w e ' Mex<Ay nepexoAOM

vi oKpyw atom eii cpeAoii R thja, °C /mBt 0,8

' rip M fam b > 35 ° C 3 H a s e H n e t o k o p accw u T b iBa eT csi n o <fjopnyjie:

1C m ax — 5,2 | 85— >a mb

1 n P M fp < 10 m s m c p e A H c ii m o lu h o ctm p acceH BO HH R, hg n p e s b iu Jcito iije M MOKCHManbHOflOnyCTMMyKO.

3 rip M fQm b > 20 ° C 3H aneHM e m o l u h o c t m paccMMTbiBae-rcn n o cfjo p n yn e : 85— iam b

(U BE = 0,5 V) collector-base U CB ma

collector-em ltter U CE em itter-base U EB mox rT305A, IT305B TT305B

C o lle c to r cu rren t, m A : d irect lCmax' Pulse /CM max2

P o w e r at co llecto r P c m W Ju n ction tem p e ra tu re fj max* ° C

T h e rm a l resistance betw een ¡unction and am b ien t medium, R lhja, °C / m W

1 W i t h fam b > 3 5 ° C , th e c u r r e n t is c a lc u la t e d b y f o r m u la :

•C m ax = 5.2 | 85— fQmb

1 W i t h fp ^ 1 0 m s a n d a v e r a g e d is s ip a te d p o w e r n o t e x c e e d in g th e m a x im u m a l l o w a b l e v a lu e .

* W i t h fam b > 2 0 ° C , th e p o w e r is c a lc u la t e d b y f o r m u la :

PC r

R t h j a

mBt P C r

85—'Q Pthja ^{, m W}

Tunoeb/e exodHbie x a p a K m e p u c m u K u e cxene c od iyu M 3 M um m epoM

Standard input characteristics for common-emitter circuit

0 2 4 6 8 W

Tunoebte ebixodHtie xapaKm epucm uKu e cxeMe c o6u/um 3 MummepoM

Standard output characteristics for common-emitter circuit

T

Manoii

4

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

2 0 30 ¿fO SO 60

3aeucuMocmu 06pamH0i0 moKa KorweKmopa om meMnepa- mypbi OKpyxcaioujeu cpedbi

Relation between collector reverse current and ambient tem­

perature

h.m A

0 10 20 JO 40 50 60 70

h n i o

UCB=iV' h ~ ii

•L/CB = 5 V ;if-5 |

'I mA (rT305A...5p^~

~ m A ( r r m p '! —

— tn m .’C

3aeucuhiocmu cmamu^ecxoio K03$$uiiueHma nepedavu mono:

а) om moKa 3Mummepa

б) om metinepamypbi OKpyncaiouieu cpedbi Relation between static current-transfer ratio and:

а) emitter current;

б) ambient temperature

3aeucunocmb Modynn KO3cfi0unueHma nepedavu moKa:

а) om m0K0 3Mummepa б) om nacmombi

Relation between modulus of current-transfer ratio and:

а) emitter current;

б) frequency

80

T p a H 3 M C T O p b l M a n o i í M O L U H O C T M B b lC O K O M H Q C T O T b l

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

U u

Uc í ( Rb e zI0í í) t-m6'25t 10°C

o 0,01 a, i 1,0 10 too

3a e u c u M o c m b o m H o c u m e n b H o i i e e n u v u H b i H a n p J t x e m i x K o n - nenmop-iMummep ^{o m} conpomueneHUfi ^e t/enu 6a30-3hummep Relation between relative value of collector-emitter voltage and resistance in base-emitter circuit

3o e u c u h o c m u e M x o c m e u K o n n e K m o p H o i o u i m u m m e p H o i o n e p e x o d o e o m H a n p a x c e H u u K o n n e K m o p -6a j a u S M u m m e p - 6030

Relation between collector- and emitler-junction capacitances and collector-base and emitter-base voltages

Y K A 3 A H Mfl n o n P U M E H E H M H O H 3 K C n n y A T A l 4 H M

ricmKa np0M3B0flHTcs ortoBíihho-cbhhL^oBbim npunoeM n O C 61-0 MjiM nOC-61 c TeMnepaT/poü He 6onee 230 °C .

B KanecTBe TennoOTBOAa peKOMeHAyeTC* npMMeHATb nMHijeT c nnocKKMM MeflHbiMH ry6KaHH w h p h h o ñ He MeHee 3 mmmto/iimhhoéí He MeHee 2 m m.

ripn KOHTpone napaMeTpoB, McnbiTaHMHX, 3KcnnyaTaunM m t.a . He AonycKaeTca nepeAana MexaHMMecKHX ycMnnü Ha CTemiHH- Hbie H30n«T0pbl.

H3rn6 (paA^ycoM He MeHee 1,5 m m ) BbiBOAOB AonycKaeTca Ha paccTOflHMM He M e H e e 3 m m o t xopnyca TpaH3ncropa.

Pa3peiuaeTCH coeAMHeHMe TpaH3HCTopOB c 3neMeHTOMM annapa- Typbi Ha paccTOHHHM He Menee 3 mm o t Kopnyca TpaH3MCTopa, H C K n i o M a t o i H H M M HarpeB b m o6o ü Tonxe Kopnyca TpaH3HCTopa He 6onee 65 ° C m npoxoxfAeHMe Hepe3 Hero BjieKTpnHecKMX HMnyjibCos.

T p a H 3 M C T O p b l M a n o i í M OLUHO CTM B b lC O K O M H a C T O T b l

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

I N S T R U C T I O N S O N U S E

Soldering should be accomplished with tin-lead solder Ü O C 61-0 o r nOC-61 at a temperature of not higher than 230° C.

Pinchers with flat copper jaws, at least 3 mm wide and 2 mm thick, should be used as a heat sink.

W h e n checking the parameters, during test and in service avoid application of mechanical force to the glass insulators.

The leads may be bent at a radius of at least 1.5 mm at a distance of at least 3 mm from the transistor case.

It is allowed to connect the transistors to the equipment com­

ponents at a distance of at least 3 mm from the transistor case, avoid­

ing heating of the transistor case in any point to more than 65° C and preventing passage of electric pulses through it.

T p a H 3 M C T O p b l M a n o i i M O U 4 H O C T M B b lC O K O M M O C T O T b l

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

O B L U M E C B E f l E H M f l

TepMaHHeBbie cnnaBHO-flH(()<j)y3MOHHbie p-n-p TpaH3MCTopbi T T 3 08 A .. .rT308B npeAHcuHaHeHbi Ann reHepuposamiH, ycHneHMH, npeo6pa30BaHHfl Kone6aHMfi BbicoKow MacTOTbi, paôoTbi b MMny/ib- cHbix cxenax annapaTypbi ujnpoKoro npHMeHeHHfl.

OtJjoptineHMe — b mcto/ijimmgckom repMeTHHHOM Kopnyce C THÔKMMM BblBOflOMH.

YcTOMHHBOCTb K BHeiUHHH B03fleiicTBHHM :

BH6pauHfl b fl«ana30He hoctoto t 10 a o 2000 Tu c ycKopeHHeM 15 g;

MHoroKpoTHbie yAapbi c ycKopeHMeti ao 150 g;

nHHeÜHbie Harpy3KH c ycKopcHMGM a o 150 g;

TeMnepaTypa oxpyxaiom eü cpeAbi o t —60 ao +70 °C . Macca TpawnCTopa hc 6onee 2,2 r.

G E N E R A L

Germ anium alloy-diffused p-n-p transistors T T 3 08 A .. .TT308B are designed for use in high-frequency oscillator, am plifier and converter circuits, for operation in pulse circuits of equipment of wide application.

Mounting — in a metal sealed case with flexible leads.

Resistance of External Effects:

vibration within frequency range from 10 to 2000 Hz at an acceleration up to 15 g;

multiple impacts at an acceleration up to 150 g;

ambient temperature — from —60 to + 7 0 ° C Transistor mass — 2.2 g, max.

O C H O B H b l E T E X H U H E C K M E f l A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 n e K T p n H e c K M e n a p a i i e T p b i E l e c t r i c a l P a r a m e t e r s

3HaMCHMfl ^ O K M M b l M JM C PC H M A

f l a p a M e T p b i O S o î H a M e H H H V a lu e M easuring conditions

Pa ra m e te r D esignation

h c n c H c e min

we 6onee m ax

U C B . U E B *.

V

/C . /E**.

mA f. Hz

1 2 3 4 5 6 7

0 6paT H b lii t o k, mkA Reverse c u rr e n t,/ iA

KonneKTopa _{^C B O} - 2 ; 5 5 : 1 5 — —

collecto r

3M HTTepa _{( E B O} - 5 0 2^{* — —}

em itter

CTaTHHecKMit KOj(|)<j)Mlineht nepeAanH TOKa _{h 21E} 1 1 0* * 5 0

Static curren t-tran sfer ratio

TT308A 2 0 7 5

I T 3 0 8 B 5 0 1 2 0

TT308B 8 0 2 0 0

MoAynb K03tt>4>nuneHTa nepeAOHH to ko

Ha 8 bICO KOM MOCTOTe _h21c 5 5* » 2 ^■1 0 7

Modulus of c u rre n t transfer ra tio at high freq uency

TT308A 4 .5 -

rT 3 0 8 B, TT308B 6 -

HanpnweHHe b p ex rn ie h acb im ehh h, B : S a tu ra tio n vo ltag e, V :

MOKAy 6a3 0H M 3m M T T e p o m U BE sat - 0 , 5 - 1 0; 1* —

base-emi tter

t i e x A y K o n n e K T o p o M m 3m M T T e p o M U CEsat ^{5 0 ;} 3*

collector-em itter

TT308A - 1 ,5 - -

TT308B, TT308B - 1 ,2 - -

82

T p Q H 3 M C T O p b l M a n o i i M O L

14

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

1 2 3 4 5 6 7

HanpflweHHe M e«Ay KonneKTopoM h SMMTTepoM npw HyneBOM TOKe 6a3bi H 30AOHHOM TOKe 3MHTTepa, B

C ollector-em itter vo ltag e at base cut-off cu rren t and preset em itter c u rre n t, V

U ( L )C E O 12,5 10** 50

EMKOcTb, ^{n 0}: C a p acita n ce , p F :

KonneKTOpHOTO nepexoAa collector-junction

8 5* 5 • 10‘

SMMTTepHoro nepexoAa emitter junction

C E 25 1* 5 ■ 10‘

rioCTOflHHOH BpeMeHH uenM 0 6paTH0H CBH3H Ha BblCOKOii HaCTOTe, nc

Tim e constant of feedb ack c irc u it at high frequency, ps

rT3 08A , TT308B IT 3 0 8 B

r b 'b C c

— 400

500

5 5** 5 ■ 10*

BpeMd paccacbiBaHM«, mkc

S u rviva l time, fis 1, — 1 — 50; 4 * ; 2*

1,25*

10s . . .10*

l l p e A e J i b H b i e 3 H a M e H M « A o n y c T M M b i x p e> K M m o b 3 K c n n y a T a i 4 M M

M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s

HanpjDKeHMe, B :

Me>Kfly KonneKTopoM h 6a3oii ^ c b m ax MMnynbCHoe Me>KAy KonneKTopoM m 6a3o£i npw 0 6paTH0M CMemeHMM Ha 3MMTTepe mkc)

^ C B M m ax

Me>KAy KonneKTopoM m 3mMTTepoM b cxeMax K/iaccoB ,,A “ ycMneHMH ( R b e ^ kOm) U CERmax Me>KAy KonneKTopoM h 3MMTTepoM 3anepToro T P aH3MCTOP a U CEVmax

S M M T T e p H o r o n e p e x o A a ( / e b o ^ 2 m A ) u E B m a x

r lo C T O f lH H b lH C p e flH M M T O K K O J U l e K T O p a IC A V max'

T o k K o n n e K T o p a b M M n y / ib c e ( l p < 5 m k c ) / c m m a x ’

M o u iH O C T b h q K o n n e K T o p e P c m a x '' m B t

H M n y n b C H O f l M O U JH O C T b ( ¡ p ^ 5 M K C ) P c M m a x ' M ® T

T eM nepaTypa o K p yw aio m eii cpeflbi lc TeM nepatypa nepexoAa (j raax, ° C

m b '

npWHeMOHMe. ripH nOHHWCHHOH flOBHCKKH 6,7 1 10* H/m1 BCflHVRHa HOKCHManbHO flOnyCTMMOM KOIMHOCTH PC IHQX CHBWOCTCfl

h o 3 0 % .

- 6 0 ...4 5 ° C

20

30

12

20 3 50 120 150 360 70 85

V o lla g e , V :

collector-base U C B m ax

pulse collector-base a t reverse bias across em itter ( / p < ; ^ s ) ^ C B M m ax

collector-em itter in class “ A " a m p lifie r circuits ( ^b eS ^ k O h m ) ^Uc e r m ax

collector-em itter of off-transislor U C E V m ax

em itter-junction (/EBo ^ 2 m A ) U E B m ax C o lle c to r d irect a v e ra g e cu rren t, /c a v max' m'&‘

C o lle c to r c u rre n t in pulse ( lp<,S/its) /cm m a x ' P o w e r at co llecto r Pcmax'-

Pulse p o w e r (fp^5/<s) P CM max, m W A m b ien t tem p e ra tu re famb, ° C Ju n ction tem p e ra tu re /¡max. ° C

N o t e . A t a d e c r e a s e d p r e s s u r e o f 6.7 * 10’ N / m *, th e v a lu e o f m a x im u m p e r m is s ib le p o w e r Pc m ax d e c r e a s e s b y 3 0 % .

1 B T e n n e p a T yp n O M H H T e p s a n e 45 . .70 ° C MOKCHMO/ibHO f l o n y c T M M b i e 3 H O H C H H H C H M W a t O T C X Z

U C B m ax. U C B M m ax " a 1,0 B / ° C ; U C E R m ax w a 0,4 B / 5 ° C ; U C E V m a x H a 1 . 0 B / S ° C ; U E B m a x « a 0,2 B/5 ° C ;

<CM m ax H a 4 M A / 5 ° C ;

P C M m ax w a 10 mBt/S ° C ;

' B T e M n ep aTyp H O H H H T e p s a n e 45. . .70 ° C MaKCMManbHO flonycTM M an MOLMHOCTb CHMWaeTCX B COOTBeTCTBHH C tfciOptiynOH :

Pc I 85 ° C — famb

0,25

1 W i t h i n t e m p e r a t u r e r a n g e f r o m 45 to 70 ° C , th e m a x im u m a l l o w a b l e v a lu e s d e c r e a s e b y :

U C B m a x .U C B M m ax b y 1 . 0 V / ° C ; U C E R m ax b y 0.4 V/5 ° C ; U C E V m ax b y 1.0 V/5 ° C ; U E B m a x b y 0.2 V/5 ° C ;

/CM m ax b y 4 m A / 5 ° C ;

P C M m ax b y 10 m W / 5 ° C .

1 W i t h i n t e m p e r a t u r e r a n g e f r o m 45 to 70 ° C , th e m a x im u m a l l o w a b l e p o w e r d e c r e a s e s in c o m p lia n c e w i t h th e f o llo w in g f o r m u l a :

85 °C—Igmb

P C r 0.25 ^{m W}

T p a H 3 M C T O p b l M a n o i i M O U 4 H O C T M B b lC O K O H M CXCTO Tbl

Lo w - P o w e r H ig h - Freq u en cy T ra n s isto rs

Tunoebie exodHbie xapaKmepucmuKu e cxeMe c o6u/um 3mummepon Standard input characteristics for common-emitter circuit

30

2S 20 15

W

0

Ic,mA

iOO/jfi

r r jo s A

?00pA

¡R-IOOpA

4«

40

32

24 16

Ir.m A

fT3085

2 ^ 6 10 12 ft

/ 4 00pA 50D/JA"

< J m l ^a

-WO jj A- fo*W0pA . ! 1 2 4

42 JJ 28

21

/4

0

Ic.mA H308B

/ 250 200

s' ISO

y - iiin

' A-

\ \

2 4 6 8 10 12

Uc_e,V

Tunoebie ebixodHbie xapaKmepucmuKu e cxene c o6u]un 3Mummepon

Standard output characteristics for common-emitter circuit

3aaucuMocmb omHOCumenbHou eenuvuH m cmamuvecKoio KO300uquenma nepedavu moKa om moKa 3Mummepa Relation between relative value of static current-transfer ratio and emitter current

3aeucuMocmb omwocument>Hou eenunuHbi o6pamHozo moKa KonneKmopa om mennepamypbi OKpyncaiouieu cpedbi Relation between relative value of collector reverse current and ambient temperature

3aeucunocmb omHocumenbHoQ eenuvuHbt npo6ueH020 ua- npxoKeHUA KonneKmop-SMummep om conpomueneHux e qenu 3Mummep-6a3a

Relation between relative value of collector-emitter breakdown voltage and resistance in emitter-base circuit

1.2

1.0 0.8

0,6

Cc CcCUcB = 5V)

\

U

.V

10 15 20

3aeucuMocmbomH0CumenbH0u eenunuHbi em<ocmu KonneKmop- Hoio nepexoda om Hanpancehtua KonneKmop-6a3a

Relation between relative value of collector-junction capacit­

ance and collector-base voltage

84

T p a H 3 M C T O p b l M a n o i i M O U LJH O C T M B b lC O K O M M a C T O T b l

Lo w - P o w e r H ig h - Fre q u e n cy T ra n sisto rs

Y K A 3 A H Mfl H O n P H M E H E H U K O I N S T R U C T I O N S O N U S E U 3 K C n n Y A T A L 4 M H

flonyoKaeTCH npon3BOA»Tb coeAHHeHM» BbiBOAOB c sneMeHTaMH cxeMbi jiK)6biM cnocoôoM (n a fix a , cs a p x a u T .n .) npw ycnosuM coËnioACHHfi cneflyram H X ycnoBHH:

3a Bce Bpet-m coeAMHeHHn TeMnepaTypa b ntoôofi T04xe xopnyca, b k j iK)Han t o h k h KOHTaKTa BbiBOAOB c xopnycoM, He AonwHa npe- BbiiuaTb MOKCHManbHO AonycTHMyio TeMnepaTypy nepexoAa 85 °C .

T e M n ep aT y p a npwnon He 6 o nee 240 °C .

npH 3KcnnyaTauHM TpaH3HCTOpa cneAyeT yMMTbiBaTb b o3m o>x- HOCTb e ro caMOBOîôyîKAeHMü xax BbicoKOMacTOTHoro sneMeHTa C ÔOnbUJHM K03(jj4>ML(HeHT0M ycHneHMH.

n P H MoHTajKe pa3petnaeTC« M3rn6 BbiBOAOB He MeHee 3 mm o t K opnyca TpaH SH cropa c paAMycoM H3rw6a He MeHee 1,5 m m, npw 3t o m AonW Ha 6biTb MCK/ivoMena B03M0>KH0CTb nepeAaMH ycumisi Ha CTexnnHHbifi H30naT0p m jih MecTo npucoeAWHeHHR BbiBOAa K Kopnycy, npw n3rn6e BbiBOAa Ha paccTOiiHMM o t 3 flo 5 mm Heo6xo- Ahm o npuMeHflTb cneuHanbHbie LuaônoHbi.

T p a H 3 M C T O p b l

Manoü

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

O B U 4 H E C B E f l E H U H

T e p M a H H e B b ie A K < H ) >'3,1 0 H H b le p - n - p T p a H 3 H c r o p b i rT 30 9A ...

TT309E n p e A H 0 3 H a 4 e H b i /xnn p a 6 o T b i b c x e M a x M a n o r a 6 a p n T H b i x p a A n o s e m a T e n b H b i x n p n e M H M K O B , T e n e B H 3 o p o B , M a rH H T O cjîO H O B h b A p y r o ü a n n a p a T y p e L u n p o x o r o n p u M e H e H M jt.

0<()opMneHne — b M e T a n n u n e c K O M re p M e T M H H O M xopnyce C rHÔKMMM B b lB O A O M H .

TeMnepaTypa oxpywaiotMeîi cpeAM ot—40 ao +55 °C . M acca TpaH3KCTopa He 6onee 0,5 r.

G E N E R A L

Germ anium diffused p-n-p transistors T T 3 0 9 A ., .TT309E a re designed fo r use in the circuits of miniature broadcast receivers, T V sets, tape recorders and in other equipment of w ide application.

Mounting — in a metal sealed case w ith flexible leads.

Am bient tem perature — from — 40 to + 5 5 ° C.

Transistor mass — 0.5, max.

It is allowed to connect the leads of the semiconductor devices to the circuit components by any method (soldering, welding, etc.), provided the following requirements a re met:

— during the entire time of connection the temperature in any point of the case, including the points of contact between the leads and the case, does not exceed the maximum allow able temperature (85° C );

— the solder temperature does not exceed 240° C.

W h ile in service, take into account that self-excitation of the transistor, as a high-frequency element with a high gain, is possible.

In mounting, it is allowed to bend the leads not closer than 3 mm from the transistor case, the bending radius being at least 1.5 mm.

Application of force to the glass insulator o r to the point of con­

nection of the lead to the case should be avoided. A special gauge should be used in bending the lead at a distance of 3 to 5 mm.

W a Ê m È m m

T p a H 3 H C T O p b l

MdJloii

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

O C H O B H b l E T E X H M H E C K M E f l A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 n e K T p H M e c K M e n a p a n e T p b i

E l e c t r ic a l P a r a m e t e r s

riapaMeTpbi Parameter

0603HaHCHWH Designation

3HaseHHR Value

Pe>KHMbl HÎMepCHMfl Measuring conditions He MeHce

min

ne 6onee

max ^{Ü C B . V 'E . mA r. Hz}

06poTH biii to k KonneKTopa, m kA ^ C B O 5 5

C o lle c to r reverse c u r r e n t,/ /A

CtotmMeCKMHK03<t>4>MHneHT nepeAOHH to k o _{h 21E} 5 1 5 0 . . . 1 0 0 0

Static current-transfer ra tio

T T 3 0 9 A , I T 3 0 9 B , r T 3 0 9 f l 2 0 7 0

I T 3 0 9 5 , r T 3 0 r , T T 3 0 9 E 6 0 1 8 0

MoAynb K03<J><f>nnneHTa nepeAam i to ko

Ha BblCOKOH MaCTOTe _{h 21c} 5 5 2 ■ 1 0 7

Modulus of current-transfer ra tio at high frequency

T T 3 0 9 A , T T 3 0 9 B 6 ^____

T T 3 0 9 B , r T 3 0 9 T 4 ^____

rT309fl, TT309E _{2 -}

EMKOCTb KonneKTopHoro nepexoAa, n 0 _{C c} — 10 5 __ 5 • 10‘

C ollector-junclion cap acitance, pF

riocTOAHHa« BpeneHM uenw o6paTHoii

CBR3M, nc r b 'b C c 5 5 5 • 1 0 ‘

T im e constant of feedb ack circu it, ps

T T 3 0 9 A , T T 3 0 9 B __ 5 0 0

T T 3 0 9 B . . . T T 3 0 9 E - 1 0 0 0

BxoAHoe conpoTHBneHtie, ^Oh h 11b __ 38 5 1

Input resistance. O hm

BblXOAHOH n p O B O A H M O C T b , C _{h 22c} — 5 - 1 0 “ S 5 5 0 . . . 1 0 0 0

O u tp u t ad m ittance, S

Ko3t}>(t>mjMeHT ujyMa, aB _{F 5} 1 1 ,6 • 1 0 ‘

Noise facto r, dB T T 3 0 9 5 , m o 9 r

6

n p e f l e / i b H b i e 3 H Q H e H W H A o n y c T M M b i x p e > Kh m o b S K c n n y a T a q H M

M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s H anpaweH He Mex<Ay KonneKTopoM m 3m m ttepo m C o ilector-em itter voltage,

^CE m a x ' ( « B E ^ 0 kOm). B

Tok KonneKTopa iCmaxJ (fomb= ■ 25 ° c )' mA MoaiHOCTb ho Kon/ieKTope Pc max3 Oamb^ —4 0 ...2 5 °C ), mBt

T e n n ep a T yp a nepexoAa ( ¡ max, ° C

’ lam b = - 4 0 . . . + 5 5 ° C J

* n P w fa m b > 25 ° C 3H a4eH H n l ç max p accH M Tb iBatO Tcn n o ÿ o p n y / ie : 1C m ax — 1.5 i 70— fam b.

J r ip w nosbiLueHHM jTeMnepaTypi»» o t 25 a o 55 ° C M oin M ocTb c h h jk o c t c hn o 5 mBtmo xa>KAbie 10 ° C

10 U CEmax’ (RbE ^ IO k O h m ), V

10 C o lle c to r c u rre n t /c max3 ( 'a m b = - 40- • 2 5 ° c )- P o w e r a t c o llecto r P c max3 ( L b = ~ 40- • -25 °C ),

50 m W

70 Ju n ction tem p e ra tu re fj max, ° C

1 fam b = — 4 0 . . . + 5 5 ° C

1 W i t h >amb>25 ®C, Ih e v a lu e s o f /c m ax ** c a lc u la t e d b y f o r m u l a : 1C m ax — t-5 I 70— famb* m A

* W i t h th e t e m p e r a t u r e r is e f r o m 25 to 55 ° C , th e p o w e r d e c r e a s e s b y 5 m W p e r 10° C

86

T p Q H 3 M C T O p b I M a n o i i M O U H H O C T M B b lC O K O M H d C T O T b l

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

Tunoebie exodHbie xapaKmepucmuKu e cxerie c o6u/um SMummepori

Standard inpul characteristics for common-emitter circuit

3aeucuM0cmb cmamuvecKoio KOitficfiuiiueHma nepedavu moko om meMnepamypbt OKpyxcaiouieu cpedbt(1 — dna CT309A, CT309R, rT309A;

2

i T 3 0 9 6, i T 3 0 9 f , rT309E)

22 20

18 16

12 10 8 6 4 2 0

hziE ..C L )

S'

-- “ --

r ' Ucb=SY

/ f-WMHz

le m A 2 3 ^ 5 6 7 6 9 10 II 12

27 2k 21 IB

15

12 9 5 3 0

h2tE

— v.

N

.._

Ucb = 5V

5

f> MHz

W 15 2D 25

3oeucuMocmb nodynji K03$$uiiueHma nepedavu moKa:

а) om moKa jrtummepa б) om nacmombi

Relation between modulus of current-transfer ratio and:

а) emitter current;

б) frequency

T p a H 3 M C T O p b l

Manofí

4

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

3aeucuM0cmb o6pamnoio moxa KonneKmopa om mennepamypbt OKpyxcavuieu cpedbi

Relation between collector reverse current and ambient tem­

perature

1,0

0,8 0.6

O h

0,2 0

U,'cc max Uce max (RgE-tOxti)

\

\

\ \

s

\ \

N .s

0,01 0,1 1,0 10

3aeucunocmb omHocumenbHou eenuvuHbi Hau6onbuieio h o- npHOtceHux KonneKmop-iMummep om conpomueneHun e qenu 3nummep-6a3a

Relation between relative value of maximum collector-emitter voltage and resistance in emitter-base circuit

3aeucuM0cmb eMKOcmu K0nneKm0pH0i0 nepexoda om ho- npaxceHua Konnexmop-6a3a

Relation between collector-junction capacitance and collector- base voltage

30 28 22 18

Ik 10

0 025 0,5 0,75 1,0

3oeucuMocmb eMKoemu 3Mummepnoio nepexoda om Hanpx- 3KeHun 6a3a-3Mummep

Relation between emitter-junction capacitance and base-emitler voltage

Ce ,pF

\

\ ^{V f-5MHz}

V - \

\ -

■___

H

Y K A 3 A H M H n o n P H M E H E H M K ) M 3 K C n n y A T A 1 4 M M

Pa3peiuaeTCJi coeAMHeHMe BbiBOAOB c sneMeHTaMM cxeMbi ntoôbiM cnocoôoM (naÜKa, csapKa) Ha paccTOSHMW He MeHee 3 mm o t Kopnyca TpaH3HCTopa, HCK/iioHaiomHM Harpes b jikjéoh TOMKe Kopnyca TpaH3nCTopa Bbiiue 65 ° C h npoxojKAeHue Hepe3 Hero SneKTpHHeCKHX MMny/lbCOB. riOHKa npOM3BOAMTCS O/IOSSHHO-CBMH- UOBbiM npwnoeM n O C C y 61— 0,5 mjih (TOC 61 (6) TeMnepaTypow He 6onee 230 °C .

B KanecTBe TennooTBOAa peKOMeHAyeTC* npMMeHSTb riMHUeT c nnoCKMMH MeAHbiMH ryÔKOMH ujMpMHoñ He MeHee 3 mm h to/iu ih h o ñ He MeHee 2 mm.

H3rw6 BbiBOAOB TpQH3MCTOpOB AOnyCKOeTCR Ha paCCTOflHMM He MeHee 3 mm o t Kopnyca TpawHCTopa. BHyTpeHHMH paA«yc H3rw6a He MeHee 1,5 mm.

I N S T R U C T I O N S O N U S E

It is allowed to connect the leads to the circuit components by any method soldering, welding at a distance of at least 3 mm from the transistor case, thereby avoiding heating of transistor case above 65° C and preventing passage of electric pulses through it.

Soldering should be accomplished w ith tin-lead solder n O C C y 61-0.5 o r n O C 61 (6), the soldering temperature not exceeding 230° C.

Pinchers with flat copper jaws, at least 3 mm w id e and 2 mm thick, are recommended for use as a heat sink. The transistor leads may be bent at a distance of at least 3 mm from the transistor case.

The inside bending radius should be at least 1.5 mm.

88

T p a H 3 M C T O p b l M a n o f t M O U 4 H O C T M B b lC O K O H H a C T O T b l

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

O B I M H E C B E f l E H H f l

T e p M a H H e B b ie c n n a B H o - A M 4 l(f) y 3M O H H b le p - n - p T p a H 3 M C T o p b i T T 3 1 0 A . . . T T 3 1 0 E n p e A H a 3 H a n e H b i A n si P a 6 o T b i b p a A H O B e m a T e / ib - H b ix B c e B o n H O B b ix M a n o r a 6 a p n T H b i x n p H e M H M K a x , T e n e B M 3 o p a x , M a rH M T O (j)O H a x n A p y r o f i a n n a p a T y p e i u n p o K o r o n p u M e H e H M H .

O c Jjo p M n e H M e — b M e T a n n M n e c K O M K o p n y c e c t m ô k h m m B b iB O - AOMM.

T e M n e p c r r y p a O K p y w a r o m e i i c p e A b i o t — 4 0 a o + 5 5 ° C . M a c c a n p n 6 o p a — H e 6 o n e e 0 , 2 r .

G E N E R A L

Germ anium ailoy-diffused p-n-p transistors TT3 10A .. .TT310E are designed for use in broadcast all-wave miniature receivers, T V sets, tape recorders and other equipment of wide application.

Mounting — in a metal case with flexible leads.

Ambient temperature — from —40 to + 5 5 ° C.

Transistor mass — 0.2 g, max.

O C H O B H b l E T E X H M M E C K H E A A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 / i e K T p M s e c K M e n a p a M e T p b i

E l e c t r i c a l P a r a m e t e r s

napaneTpbi Pa ra m e te r

0 6 0 3 H a M C H M H D esignation

3 H a H e H M ji V alu e

PcJKMMbl H SM CpCH M H

M easuring conditions

He neHee min

He 6onee

m ax U C 8 . v <E. *C*. I B " ,

mA f. ^{H i}

1 2 3 ⁴ 5 6 7

0 6 p aT H b iii t o k Kon/ieKTopa, mkA _{( C B O} 5 5

C o lle c to r reverse cu rren t, f i A

C T a T M M e c K M H K03(J)(f>Mu w e H T n e p e A a H M T O K a h 21E 5 1 50. . .1000

Static curren t-tran sfer ra tio

TT310A 20 70

TT310B 60 180

TT310B 20 70

TT310r 60 180

TT310fl 20 70

TT310E 60 180

M oAynb KoacjxJjHmieHTa nepeAaMw t o ko

Ha BbicoKoii nacTOTe h21e 5 5 2 • 107

Modulus of curren t-tran sfer ra tio a t high freq uency

TT310A, TT3106 6 -

TT310B, TT310r 8 —

TT310fl, TT310E 4

T p a H 3 M C T O p b l

Manoii

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

1 2 3 4 5 6 7

HanpjDKeHMe b pe>«MMe HacbimeHWH, B : S a tu ra tio n voltage, V :

MewAy KonneKTopoM m 3m HTTepoM UCE sat —

_ |

50* ; 3**

collector-em itter

MewAy 6aaoii h SMMTTepoM U BE sat -

I 0,7 I

base-emitter

EMKoCTb KonneKTopHoro nepexoAa, n<t> Cc ⁵ 5 • 10*

C ollector-junction cap acitance, pF

TT310A, TT310B — 4 ^_

rT 3 1 0 B ...rT 3 1 0 E _{- 5 -}

EMKOCTb 3MHTTepHoro nepexoAa, n<l) C0 - 40 1 — 5 • 10*

Em itter-junction cap a cita n ce, pF

r i o c T O J i H H a a bp e M e Hh u e n w o 6 p a T H o f i

C B A 3 H , nc rb'b Cc 5 5 5 • 10*

Tim e constant of feedback circu it, ps

TT310A. . .TT310r — 300

TT310fl, TT310E - 500

BxoAHoe conpoTMB/ieHHe b peWHMe Manoro cwrHana, On

h11c 38 — 5 1 5 0 ...1 0 0 0

Input resistance under low -level signal operations, O hm

Bx oah o a npoBOAHMOCTb b pe>KHMe Manoro

CMrnana mkC, h22e - 3 5 1 5 0 ...1 0 0 0

Input ad m ittance u n d er low -level signal operations, f i S

Ko34>4)MuneHT u j y M a , a B F 5 1 1,6 -10*

Noise facto r, d B

TT310A, m i 0 B — 3

CT310B. . .TT310E

—

□ — A Q M H b ie , H e r a p a H T H p y e n b i e flO K y M C H T o n n H a n o c T a B K y

□ — d a t a n o t g u a r a n t e e d b y d e l i v e r y d o c u m e n t s

Hanp«>KeHHe, B :

Me>Kfly KonneKTopoM « 6a3ofl Ucb max MeKAy KonneKTopoM h 3M«TTepoM U CE

(^EB = 10 Ki2)

( Re s = 2 0 0 i d ? )

Tok KonneKTopa / mA MomnocTb Ha KonneKTope P c m ax *' ( U = — 4 0 . . . + 3 5 °C ) , mBt TeM nepaT ypa nepexoAa fj max, °C

r i p e A e n b H b i e 3 H a n e H H H f l o n y c T H M b i x p e w H H O B 3 K c r m y a T a u H M

M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s U = 2 5 + 1 0 ° C

V o lta g e, V :

12

collecto r-em itter U cEm ax 1 10 (R EB = 10 k£>)

6 (R EB = 200 kQ )

10 C o lle c to r c u rre n t lCmax, mA P o w e r a t co llecto r, Pcmax*>

20 (famb = - 4 0 . . . + 3 5 °C ) , m W 75 Ju n ction tem p eratu re, lj max, °C

* rip M ia m b > 35 ° C 3HaMeHHC h o l u h o c t h paccM M TbiBae-rc* n o 4>opMyne:

. 'i

—

PC 2 ° C / m W

* W i t h fam b > 3 5 ° C , th e p o w e r is c a lc u la t e d b y f o r m u la : p _ *i m ax— 'a m b w P C m a x - - 2 w . m W

90

T p Q H 3 M C T O p b l

Manoii

14

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

v

Tunoabie exodnbie xapaKmepucmuKU e cxene c 06- lyuM jMummepOM

Standard input characteristics for common-emitter circuit

Tunoebie ebixodHbie xapaxmepuc- muKu s cxeMe c o6uium 3Mum- mepoM

Standard output characteristics for common-emitter circuit

1 ^{Ic.m A} r r jt o B , r r j i o r , m m

A 5 6 7 8 9 UCi>!/

3aeucuMocmb cmamuvecKozo KO30cf>uyueHma nepeda^u moKaom moKa 3mummepa Relation between sialic

current-lransfer ratio and emitter current

h y c

rT3W A,rrJW 8,rrj!BM

Ik a - S V

I i J t A

m w5,rrw,rnwL

h .m A

3aeucuMOcmb cmamu'tecKoio K03g5g5m/ueHma nepedavu moKa om meMnepamypbi OKpyztcatoiyeu cpedbi Relation between static current-lransfer ratio and ambient temperature

T p a H 3 M C T O p b I M a n o i i M O IH H O C T M B b lC O K O M M a C T O T b l

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

3aeucunocmb o6pamnoio moxa KonneKmopa om meMnepa- mypbi oxpyxcaioufeu cpedbi

Relation between collector reverse current and ambient temperature

3aeucunocmb npo6ueHoio HanpxoKeHun xonnexmop-3Mummep om conpomuaneHu/t e qenu 6a3a-3nummep

Relation between collector-emitter breakdown voltage and resistance in base-emitter circuit

3aeucutiocmb BbixodHou nposoduMOcmu g pencuMe nanoio cuiHana om moxa jm ummepa Relation between output admittance in low-level signal operation and emitter current

ru m , mios.cTjioA

3aeucunocmb oxodnoso conpomueneHU# e peiKur-ie tianozo cuzHana om moxa 3mummepa Relation between input resistance in low-level signal operation and emitter current

rrJtos.rrjwr.rrswE

n m b r m d i

92

T p a H 3 M C T O p b l M C U IO ÍÍ M O IH H O C T M B b lC O K O Ít M a C T O T b l

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s is to rs

Y K A 3 A H Hfl n o n P U M E H E H U K ) m 3 K e n n y A T A U M H

r i a i i K y B b lB O A O B n p O H 3 B O A H T b HQ paCC TO flH M M H e M S H e e 5 MM OT Kopnyca npw6opa r ip n T e M n e p a T y p e H e 6 o n e e 250 ° C b T e n e H M e H e 6 o n e e 10 c c o 6 e c n e M e H n e M M e p n p o T H B n e p e r p e B a T p a H 3 W C T o p o B .

BblBOAOB AonycKaeTca Ha paccTosHMK He MeHee 3 m m

o t Kopnyca TpamwcTopa. PaAHyc M3rn6a He 6onee 2 m m.

I N S T R U C T I O N S O N U S E

Solder Ihe leads at a distance of at least 5 mm from the transis­

tor case at a temperature of not higher than 250° C for no longer than 10 s, taking measures to prevent the transistor from excessive heating.

The leads may be bent at a distance of at least 3 mm from the transistor case. The bending radius should not exceed 2 mm.

| i .>■-!: r :: ... ú J ij: Xi.'" C i , ‘ I Eii ' S«,"' U d 'WljJ T p O H 3 M C T O p b I M O JI O M M O L 1 4 H O C T M B b I C O K O Í Í H O C T O T b l

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

O B L M M E C B E f l E H U f l

T e p M a H H e B b i e nnaHapHbie n-p-n TpaH3HcTopbi npeAH03HaHeHbi

Ann pa6oTbi b cxeMax paAMOBemaTenbHbix npweMHHKOB, TeneBMso- poB m Apyrovi annapaTypbi uiMpoKoro npnMeHeHHfl.

OcjjopMneHMe — b MeTOji/iMMecKOM repMeTMHHOM Kopnyce C rn6KMMM BblBOAaMH.

TeMnepaTypa oxpywatomeit cpeAbi ot —40 ao +55 °C . M acca TpaH3HCTopa He 6onee 2 r.

G E N E R A L

G erm anium p lan ar n-p-n transistors a re designed for use in the circuits of broadcast receivers, T V sets and other equipment of wide application.

Mounting — in a metal sealed case with flexible leads.

Ambient temperature — from —40 to + 5 5 ° C.

Transistor mass — 2 g, max.

O C H O B H b l E T E X H U M E C K M E A A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 n e K T p n w e c K n e n a p a M e T p b i E l e c t r i c a l P a r a m e t e r s

3HaMeHMA Pe>KHM bl M 3M epCHM fl

n a p a M e T p b i OôojMaMeHH# V alu e M easuring conditions

P a ra m e te r Designation H e n e H e e

min

He 6onee m ax

U C B . U E B * ,

V 1C . 1B *. <E**,

mA f. M H z

t 2 3 4 S 6 7

O ë p a T H b l H T O K , MKA C o lle c to r reverse c u rre n t,/ ¿A

KonneKTopa co llecto r

^ C B O

TT311E, TT311 }K - 10 12 _- -

TT311M - 10 10 _{- -}

3 M H T T e p a e m ille r

k&O

T p d H 3 M C T O p b l M O n O M M O L H H O C T M B b lC O K O M M O C T O T b l

L o w - P o w e r H ig h - Freq u en cy T ra n s isto rs

1 2 3 4

5

E m itte r reverse cu rren t, f iA

TT311E, rT311 >K _- 15 2*

rT311M _- 15 1,5* _{- -}

CTOTHMeCKMM K03$(f>M l)MeHT nepeAOMM TOKQ Static current-transfer ra tio

TT311E

i>21E

15 80

3 15**

TT311 >K 50 200

_

rT311M 100 300 _-

MoAyJib Kos^t^MUMeHTa nepeAaHH to ko Ha BblCOKOM HaCTOTe

Modulus of current-transfer ra tio at high frequency

TT311E

^ l e

2.5

5 5** 100

fT311>K 3

_

TT311H 4,5 _-

H anpnxeH H e b pewwMe HacbimeHMH, B : S a tu ra tio n vo ltag e, V :

MeWAy 3liHTTepOM M 6a30H

emitter-base ^BE sat - 0,6 _- 15; 1,5*

Me>KAy KonneKTopoM H SMMTTepOM

collector-em itter U CE sal - 0,3 _- 15; 1,5*

H an p sw eH d e MewAy KonneKTopoM M 3MMTTepon npw HyneBOM TOKe 6o3bl M 30AQHH0H TOKe 3M HTTe pO, B

C o llector-em itter voltage at base cut-off cu rre n t and preset em itter cu rren t, V

U (L)CEO 8 _{- -} 10** -

EMKOCTb, n<J>:

C a p acita n ce , pF:

KonneKTopHoro nepexoAa collector ¡unction

SMHTTepHoro nepexoAa em itter junction

5

2,5 5

0,25* _-

10 10

BpeM« paccacbiBaHM« HocHTenefi, hc

S u rv iv a l tim e, ns U - 50 _- 20; 2* _-

riocToiiHHafl BpeMeHh uenH o6paTHoii CBB3H, nc

T im e constant of feedback circu it, ps TT311E

r b’ b C c

75

5 ^c**

5

TT311)K, TT311M — 100

rip e fle n b H b ie 3HoHeHHa A o nycT H M b ix p e w H n o B 3KcnnyaTaM H M M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s HanpflweHwe, B :

Me>«fly KonneKTopoM m 6a3oit;

n o c T o s H H o e UCB^{m ax’}

TT311E. rT311>K rT311M

M M n y j l b C H O e U C B M m a x ' ( ' p ^ 1 M K C )

Rb M e W A y K o n n e K T o p o M m 3m H T T e p o M U c E m a x ’ (r ^ 1 0 )

rT311E. rT311>K m n n

M e> K A y 3 M H T T e p O M M 6 a 3 0 H U £g m ax

rT311E, rT311>K rT311M

V o lta g e , V : co llecto r- b ase:

d irect U CBmax'

12 TT311 E, TT311 >K

10 TT311H

20 P ulse LfCBMmax' ( I p ^ lj u s )

< 10 collector-em itter U CEmax' ( ¡ ^ ^ 1 0 )

12 TT311E, TT311>K

10 TT311H

em itter-base U EB max

2 TT311E, TT311?K

1,5 rT311M

94

T p O H 3 M C T O p b l

Manoii

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

T o k KonneKTopa I^{C m a x} (».mb = - 4 0 . . . + 5 5 ^{° C ) .} mA MomHoCTb hq KonneKTope P

('ornb = - 4 0 . . . + 2 0 ± 5 ° C ) , h B t TeM nepaTypa nepexoA a /j max , °C

’ fam b = — 4 0 . . . + 4 5 ° C . B c n y n a e noDbiuieHHH T e n n e p a T y p b i a o5 5 ° C 3 H O M e H H e H a n p n w c H H H c H H w a e r c n h o 1 B a n » U C B M U C E M H a 0 .2 B A n n U E B — H a K a m f l b i e 5 °C .

1 n P H f a m b = 2 5 . . . 5 5 ° C j h o h g hw e m o l u h o c t h p a c c M H T b i e a e T c n n o (fjo p n y n e :

PC m ax - 150— 100 ' » ^ - 2 5 ^ ^

50 C o lle c to r c u rre n t lCmax ( l Qmb = — 40. . . + 5 5 °C ) , mA P o w e r a t collecto r, P c ^{m ax5}

150 (/amb = - 4 0 . . . + 2 0 ± 5 ° C ) , m W 70 Ju n ction tem p e ra tu re fj max, ° C

1 fam b = — 40. . . + 4 5 ° C . W i t h th e t e m p e r a t u r e r is e to 55 ° C , th e v o l t a g e v a lu e d e c r e a s e s : b y 1 V f o r U C B a r »d ^ C E a n d h y 0.2 V f o r U E B P e r 5 ° C .

2 W i t h »amb = 2 5 .. .55 ° C , th e p o w e r is c a lc u la t e d b y f o r m u la :

P c m ax = 150-100 ' “ ' " t “ 15, m W

3aeucunocmu cmamuvecKozo KosificfiuiiueHma nepedonu moKa om moKa 3Mummepa

Relation between static c urrent-transfer ratio and emitter current Tunoebie exodnbie xapaKmepucmuKu e cxeMe c o6u/u m 3num- mepo m

Standard input characteristics for common-emitter circuit

Tunoebie BbixodHbie xapaKmepucmuKu e cxeMe c o6u/um 3/iummepOM

Standard output characteristics for common-emitter circuit

T

H anoii

Lo w - P o w e r H ig h - Freq u en cy T ra n s isto rs

h zie

3aeucuMocmb omHocumenbHoO eenunuHbi cmamuueCKOzo K03<fi<f>uqueHma nepedavu moxa:

а) om Hanpjocenux KonneKmop-6aja б) om meMnepomypbi OKpyxatoiqeu cpedbi

Relation between relative value of static current-transfer ratio and:

а) collector-base voltage;

б) ambient temperature

10

xo

4

&

5^ UC8 : 12V

tam6>°C

0 ZO 40 BO

3aeucunocmb omHocumenbHoO eenuvuHbi 06pamH0i0 moKa KonneKmopa om meMnepamypbi OKpyxa/ou/eu cpedbi Relation between relative value of collector reverse current and ambient temperature

30eucuM0cmu modynn Koi^ ^uquenm a nepedavu moxo om moKa 3Mummepa

Relation between modulus of current-transfer ratio and emitter current

m

10

1,0

I ebq

...

/ y / / / / *

U eb ~2V

La.m8>°0

0 ZO l*0 BO

3aeucuMocmb omnocumenbHou eenuvuHbi o6pamHoio moxa 3Nummepa om meMnepamypbi okpyxcaniyeu cpedbi Relation between relative value of emitter reverse current and amb/enl temperature

Cc,pF

\

v

s

Vce*

' 0 2 4 6 8 W 12 ft 16 18 20 2224

3aaucuMOcmb eMKOcmu KOnneKmopHOZO nepexoda om HanpA- xceHux KonneKmop-6aja

Relation between collector-junclion capacitance and collector- base voltage

96

T p a H 3 M C T O p b l

Ma/ioii

Lo w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

YKA3AHMfl HO nPHMEHEHMHO

m 3 K c n n y A T A M H H

r i a f i K a B b iB O flO B A o n y c K a e T C H h o p q c c t o h h h m H e M e H e e 5 m m o t K o p n y c a T p a H 3 M C T o p a n a a n b H M K O M M o in H o c T b t o 50—60 ^Bt

b T e n e H M e 10 c, n p w T e M n e p a T y p e H e 6 o / ie e 250 °C .

Mjrnô bmboaob AonycxaeTca H a paccTonHMM H e M e H e e 5 m m ot Kopnyca TpaHSMCTopa.

ripn 3KcnnyaTauMM TpaH3ncropa cneflyeT yMMTbiBOTb bo3mo)k- HOCTb ero caM0BO36y>KAeHHfl, kok BbicoxoHacTOTHoro 3/ieMeHTa c 6onbuJMM K03(|)cjjHLineHT0M ycM/ieHMn.

ripH MOHTa>Ke TpaH3Hcropa b cxeMy Ana npeAoxpaHeHHS ero ot npo6oa cTOTHnecKHM 3apnAOM onepaTopy Heo6xoAHMo HaAeBaTb Ha pyxy MeTannwHecKMii 6pac.neT, 3a3eMneHHbiS nepe3 conpoTHB- neHHe b HecKonbKo MeroM.

I N S T R U C T I O N S O N U S E

The leads may be soldered at a distance of at least 5 mm from the transistor case with a 50—60 W soldering iron for no longer than 10 s, the soldering temperature not exceeding 250° C.

Bending of the leads is allowed at a distance of at least 5 mm from the transistor case.

W h ile in service, take into account that self-excitation of the transistor as a high-frequency element with a high gain is possible.

In mounting the transistor in the circuit the operator must put a metal bracelet on hish and so as to prevent the transistor from breakdown by a static charge. The bracelet should be grounded through a resistor of several megOhms.

T p a H 3 M C T O p b l

Manoîi

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

O B I M H E C B E f l E H M f l

T e p M a H M e B b ie cn n a BH o - A M < t>4iy 3MC|H H b ie p - n - p T p a H 3 M C T o p b i

TT313A.. .TT313B n p e A H a 3 H a n e H b i a / ih p a 6 o T b i b c x e M a x T e n e B M - 3M OHHOH, n p w e M H o f i, y c w n H T e n b H o f i m A p y r o f i annapaTypbi u in p o - Koro npwMeHeHMj!.

0 < J> o p M n e H M e — b M e T a / i n w h c c k o m r e p M e T M H H O M Kopnyce

C T H Ô K M M M B b l B O A a M M .

TeMnepaTypa oKpywanomefi cpeAbi ot —40 ao 4-55 °C . M acca TpaH3MCTopa H e 6o/iee 2 r.

G E N E R A L

G erm anium alloy-diffused p-n-p transistors TT3 13A .. .TT313B a re designed for use in the circuits in T V , receiving, am plifier and other equipment of wide application.

Mounting — in a metal sealed case with flexible leads.

Ambient temperature — from —40 to + 5 5 ° C.

Transistor mass — 2 g, max.

O C H O B H b l E T E X H H H E C K M E f l A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 n eK T p H H e cK M e n a p a M e T p b i E l e c t r i c a l P a r a m e t e r s

□apaMeTpbi P a ra m e te r

0603H0MeHH*

Designation

3HaHCHMfl

V a lu e

POKMMbl H3MeP eHMH M easuring conditions

H e M e H e e min

H e 6 o / ie e m ax

U C B , U E B,

V le. iB * . Ie” .

mA f. Hz

1 2 3 4 5 6 7

0 6 p a T H b l H T O K , MkA Reverse cu rren t, y / A

K o n n e K T o p a »C B O — 5 12 — —

co llecto r

3 m H T T e p a 'e b o — 50 0,2* — —

em itter

T p a H 3 n c T o p b i

Manoii

Lo w - P o w e r H ig h - Freq u en cy T ra n s isto rs

1 2 3 4 5 6 7

K o34)c))M4neHT nepeAOHM to k o b cxeMe c o6uuhm 3mHTTepoM b pe)KHMe M anoro CHTHana

C u rren t-transfer ra tio fo r com m on-em itter circu it u nd er low -level signal operations

TT313A, TT313B TT313B

h21c

20 30

250 170

5 5

5**

5**

5 0 ...1 0 0 0 5 0 ...1 0 0 0 M oAyJib K03<j)4>nuMeHTa nepeAanw t o ko ho

BbicoKofri nacTOTe

Modulus of current-transfer ra tio a t high freq uency

h21e 5 5»* 10s

TT313A TT313B TT313B

3 4.5 3.5

10 10 10 Hanpn>KeHHe b pewHMe HacbimeHH», B :

Satu ra tio n voltage, V :

M e*A y 6a30H H 3MHTTepOM

base-emitter U B E s a t - 0,6 - 15; 1,5* -

Me>KAy KonneKTopoM M 3MHTTepOM

coilector-em itter ^{U C E sat}

- 0,7 - 15; 1,5* -

EmKOCTb, n<t>:

C a p acita n ce , pF:

KonneKTopHoro nepexoAa co llecto r ¡unction

- 2,5 5 - 107

SMMTTepHoro nepexoAa

em itter junction Ce

TT313A, TT313B

TT313B —

14 18

0,25*

0.25* ^___

107

llocTOflHHafl BpeMeHm uenw o6paTHoii CBR3H HO BblCOKOH HOCTOTe, nC

T im e constant of feedb ack c irc u it a t high frequency, ps

TT313A, TT313B TT313B

rb-b Cc

- 75

40

5 5

- 5 • 104

5 ■ 10‘

r i p e A e n b H b i e 3 H a 4 e n n i i A o n y c T M M b i x p e w m i o B S K c r m y a T a M M H

M a x i m u m V a lu e s o f A l l o w a b l e O p e r a t i n g C o n d it io n s fQmb = 2 5 ± 1 0 “ C

Hanpn5KeHMe, B :

M e«fly KonneKTopoM m 6a3oii U CB mox' MewAy KonneKTopoM m 3m HTTe poM Uc e , (fiE^;500 O m ; R b <,2 O h )

MeWAy 3MHTTepOM M 6a30ii U EB max Tok KonneKTopa /CM mQXi mA

MomHocTb ho KonneKTope ^cmax*’

famb = 2 0 ± 5 °C

'a m b = S S ° C

T e n n ep a T y p a nepexoAa t: moXi °C

‘ np« (a m b ^ ^ S ° C H a n p n w e H H e cHMM<aeTc» H a 1 B h o Ka>KAbie 5 °C.

3H p w fa m b = 20-. .55 ° C S H a w c H H e m o i h h o c t m p a c c M M T b i B a e T c n n o 4 > o p M y n e:

P C m a x 5=1 100— 1,45 (ia m b — 20), mBt

15

15 0.2 30

100 50 70

V o ltag e, V :

collector-base U CB max'

coilector-em itter l/CE ma)t (R E;>500 O h m , R B < 2 O h m )

em itter-base U EBmax C o lle c to r c u rre n t /c m m ax, P o w e r at co llecto r P c r

= 2 0 ± 5 ° C

= 55 ° C 'a m b

amb

Ju n ction tem p e ra tu re I-.

m W

°C

1 W i t h /am b> 45 ° C , th e v o l t a g e d e c r e a s e s b y 1 V p e r 5 ° C . 1 W i t h ia mb = 20. • -55 ° C , th e p o w e r is c a lc u la t e d b y f o r m u la :

P C m ax — 100— 1.45 O am b— 20), m W

98

T p d H 3 M C T O p b l MCU10M M O U

4

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

■

Tunoebie exodHbie xapaxmepuc- muKu e cxeHe c o6u/u m smum- mepoM

Standard input characteristics for common-emitter circuit

3aeucuMocmb Modynn KostpcfiuyueHma nepeda^u m 0K 0 om vacmombi

Relation between modulus of current transfer ratio and frequency

i f 313 A

0 1 2 3 4 5 6 7 8 9 /0

3aeucuMocmb tiodynx K03g5g5uyueHma nepedawu moxa om moKa 3Mummepa

Relation between modulus of current-transfer ratio and emitter current

3aeucuMocmb npoôueHoio HanpioceHux KonneKmop-3Mummep om conpomueneHux e qenu 6aia-3Mummep

Relation between collector-emitter breakdown voltage and resistance in base-emitter circuit

Initial sections of standard output cha­

racteristics for common-emitter circuit Tunoebie ebixodnbie xapaxmepucmuxu

s cxene c oôujun 3Mummep0M Standard output characteristics for com-

mon-emitler circuit HavanbHbie yvacmKU munoebix ebi-

xodHbix xapaxmepucmuK e cxene c o ô u ju m

3MummepOM

r r 3 i 3 6

T p Q H 3 M C T O p b l M O S IO H M O IH H O C T M B b lC O K O M H O C T O T b l

L o w - P o w e r H ig h - Fre q u e n cy T ra n s is to rs

Y K A 3 A H M A n o n P M M E H E H U K ) M 3 K C n n y A T A U M M

riaflTb BbiBOAbi AonycKaeTca Ha paccTOHHMH 5 mm o t Kopnyca TpaH3HCTopa naanbHHKOM b TeseHHe He 6onee 10 c co6ecneMeHneM Mep npoTHB neperpeBa TpaH3MCTopa. TeMnepaTypa npnnoa 250±

10 °C .

flpn MOHTa>Ke TpaH3MCT0pa b cxeMy A/ifi npeAoxpaHeHMH ero OT npo6oit CTOTHHeCKMM 3ap!IAOM OnepOTOpy HeOÔXOAHMO HOAeBOTb Ha pyxy MeTaji/innecKHM 6pacneT, 3a3eMneHHbiii Hepe3 conpoTMBne- HHe B HeCKO/1 bKO MerOM.

I N S T R U C T I O N S O N U S E

T he leads m ay be soldered at a distance of at least 5 mm from the transistor case with a soldering iron for no longer than 10 s.

Measures must be taken to prevent the transistor from excessive heating. T h e solder tem perature should be 250±10° C.

In mounting the transistor in the circuit, the operator must put a metal bracelet on his hand so as to prevent the transistor from breakdown by a static charge. The bracelet should be grounded through a resistor of several megOhms.

T p a H 3 M C T O p b l M a n o i i M O IH H O C T M B b lC O K O M H a C T O T b l

L o w - P o w e r H ig h - Fre q u e n cy T ra n s isto rs

O B I U H E C B E f l E H M H

TepMaHMeBbie MMny/ibCHbie p-n-p TpaH3MCTopbi TT320A...

TT320B npeAHa3HaneHbi Ann reHepMpoBaHMa, ycM/ieHHfl m npe06pa30BaHHfl KoneôaHHii b m c o k o h sacTOTbi m Ana paöoTbi

b HMnynbCHbix 6bicTpoAeücTByiotnnx cxeMax b ycrpoücTBax LUHpOKOrO npHMeHeHHfl.

OtjjopMneHMe — ^b MeTannHMecKOM repMeTMHhom Kopnyce C m 6 K M M H B b l B O A O M M .

TeMnepaTypa oKpy>«ahomeii cpeAbi o t —55 a o +70 °C . M acca TpawwcTopa He 6o/iee 2,2 r.

G E N E R A L

Germ anium pulse p-n-p transistors TT320A.. .rT320B are designed for use in high-frequency oscillator, amplifier and converter circuits and for operation in pulse quick- acting circuits of devices of w ide application.

Mounting — in a metal sealed case with flexible leads.

Ambient temperature — from — 55 to +70° C.

Transistor mass — 2.2 g. max.

O C H O B H b l E T E X H U M E C K H E f l A H H b l E B A S I C T E C H N I C A L C H A R A C T E R I S T I C S

3 / ieK T p n M ecK n e n a p a M e T p b i E l e c t r i c a l P a r a m e t e r s

n a p a M e T p b i 06o3HaMeHMfl

3HOMCHMR V alu e

P e M M M b l M3MCpCHMJI M easuring conditions

P a ra m e te r D esignation

HC MOHCe min

He 6onee

m ax

U c . Uz\

V tC. 1B **.

mA f. H i Q

1 2 3 4 5 6 7 8

0 6 p a T H b l Ü TOK, mkA:

Reverse cu rren t, {{A. : KonneKTopa co llecto r

' c B O - 10 2 0 - -

100