Tranzistory. Čast' 4; Tranzystory wysokiej mocy, wysokiej częstotliwości - Digital Library of the Silesian University of Technology

TPAH 3 ^HCT 0 ^Pbl

EOJIblUOÍÍ MOlltHOCTH BbICOHOÑ HACTOTbl HiGH-POWER HIGH-FREQUENCY

TRANSISTORS

IT90 5A, TT905B

TPAH3HCT0PbI BOJIbUIOPÏ MOIHHOCTH BbICOKOfi MACTOTbl HIGH-POWER HIGH-FREQUENCY TRANSISTORS

OB11IHE C B E ^ E H IIH G E N E R A L

T e p M a H H e B b ie f lm } i ( t) y 3 n o n n o - c n jia B H h ie p - n - p T p a tB H C T O p w PT 905A , FT905B npeflna3na4eHbi hjih p a 6 oTi>i b a n n a p a ry p e w u- poK oro npiiMciieiiiiH.

0(t)opM jienne — b MCTajiJinHCCKOM rcpMeTHHHOM Kopnycc.

M acca Tpan3HCTOpa hc 6 ojicc 7 r.

IIHTcpBa.’i TCMneparyp OKpyacaiotneii epenbi ot — 60 iio + 70 C.

G erm an iu m diffused-alloy p-n-p tran sisto rs FT 905A , FT905B a rc designed for o p e ratio n in eq u ip m en t o f wide ap p licatio n .

M o u n tin g - in a m etal sealed case.

T ran s is to r m ass 7 g, max.

A m bient tem p eratu re range — from - 6 0 to + 7 0 ° C .

O C H O B H b lE M H H f e lE B A SIC S P E C IF IC A T IO N S d.lCKTpilHCCKIIC liap aM D T p b l Electrical P aram eters

13,5mA

T D l

13,5max

riapaMCTpM Oôo3naHe-

HHH

3»aHCHHfl Value

Pe>KHMbI 113MCpCHHfl M easu rin g co n d itio n s

Parameters Designa­

tions

ne Menee, min

ne 6o.nee, max

Ucb. UÎE,V

•CM, I*:.

‘ KM . ***

mA

R.Cl r,

H z

OSpaTHbiii tok KOJijieKTopa, mA :

C o lle c to r reverse c u rre n t, m A ; ^CBO — ² — — —

TT905A

P T 905E — — 75

60

— —

OGpaTHblft tok S M im e p a. mA

E m itte r reverse c u rre n t, niA ^{^ F.BO}

1T 905A — 5 0,4* — — —

CTaTHHecKHfl K03t()(t)nunenT riep eaamhtona

S tatic c u rre n t-tra n s fe r ra tio h 2IB 35 100 10 3** — —

M onyjib K03(t>c))nuneHTa nepejjaMH TOKa F T 905A M o d u lu s o f c u rre n t-tra n s fe r ra tio

|h 2U! 3 — 10 0.5* — 2 - 10"

H anpflw enne Mescay KonjieKTopoM h s m k ttc p o m npn nyacBo.M to k c 6a3bt 11 3ajtannoM to k b 3MiiTTcpa, B C o lle c to r-e m itte r vo ltag e at base c u t-o ff c u rre n t an d p reset e m itte r c u rre n t, V

UfDCEO 65 __ — 3** — —

H a n p a ’A-emie M oxay KOajieKTopoM 11 3m hi iepoM b pe-

>KHMe HacbtmenH«, B

C o lle c to r-e m itte r s a tu ra tio n v oltage, V Uce sut 0,5 — 3;

0.5**

— —

HanpHJKemte Meatfly o aaoii n sm h ttcpo m bpokhmc nacbim eiitia, B

B ase-em itter s a tu ra tio n vo ltag e, V ^{U b r n-.it}

0,7 — 3:

0,5***

— —

EMKocTb KOjTJieKTopuoro nep ex o /ia, nU>:

C o lle c to r-ju n ctio n cap a citan c e, p F :

Cc

TT905B — 200 30 — 10;

riocTOHHuasi BpeMettu nenii o 6 paTHoii cbj)3h, nc:

T im e c o n sta n t o f feedback c ircu it, ps: r bt b C c

TT905B — 300 30 0.03* — 10:

BpeMS paccacbiBanwa b pcskhmc uacbiinem isi. mkc:

S u rv iv al tim e in s a tu ra te d m ode o f o p e ra tio n , / i s :

ts

F T 905A 4 30 >B1 =

—

= 0.5

10

6

. mA

14

0.8 0.6 0M 02

0

tj--2S‘C * / / y f / / f /

— — —' —

3aBiicnMocTb o 6 paTHoro TOKa KOJineKTopa o t nanpHHcem« K0JuieKT0p-6a3a

C ollector reverse cu rren t versus collector- base voltage

10 20 30 W SO 60 70 80 Icun. m A

I h 2 ,e l

rrso ss

3.0 2.5 2.0 1.5 10 0.5

OcESat.y I1 71

...

tj-20°C

! 1! 11

]

• 1 II I

- - — [^r.A

uc a a t J a IP

i y i u* 70°t ( r, k - 3A

| s M 1

\ \ \ f-.V;

i i r f -frS

/ /

// 1- 9 1U

! 1 1 0 0,10,2020''iOJOi60,70,80,.9 I E,A 3aBHCHMOCTb MOflyJlH KOS(j) - ([)nunenxa nepeflasu tokb ot TOKa 3MHTrepa

C u rre n t-tran sfer ra tio m odulus versus e m itte r cu rren t

3.0 2.5 2.0 1.5 1,0 0,5

0 0,2 Oft 0,6 0.8 1,0 0 0,2 0A 0,6 0,6 1,0 ucesat’ V

ty-55’C

. I I 1

%

3.0 2.5 2.0 1.5 10 .OJ

OcEsat.v 1 \\ 1¡65°C 1[ t

\ \ k - 3A 11 i\ V

1 t

\ i1

\ --- r

-3 0 0,2 Oft 0,6 0,8 1,0 0 0,2 Of 0,5 0.3 ■:

3aB»cnM0CTb nanpuJKcmiH HacbimeHiiH K0JlJieKT0p-3MtITTCp OT TOKa 6a3bl C o llecto r-em itter s a tu ra tio n voltage versus base c u rre n t

0r:n.V

3.0 2.5 2.0 1.5 1.0 0.5

0 10 20 30 40 50 60 10

UcEsat.V rr0.2A / tj--?or /

/ /

/

/

¹

/ 3.0 2.5 2.0 1.5 1.0 1.5

ucesat''

3aBHCHM0CTb naripjDK'enHsi iiacbimemui KoaaeKiop-3MHTiep ot tokb KOJiJieKropa C o llecto r-em itter sa tu ratio n voltage versus collector current

▼

% s a t.V tj- 7 5 ° C

—I¡*0.5A tj X70'C

==;

Use sal y

¡ i - t j - 55 °C

— y

— J——

\ h - 3A h .A 0 0,2 OM 0,6 fl S

3.0 2.5 20

1.5 1.0 0.5

0 0,5 10 1,5 2 2.5 3,0 I C.A 0 0.5 1,0 1.5 2,0 2.5 3,0 I C,A Uce sat V

í ñ i l

Uce sa t,v h -OAA

___

/

/ / __

Ic*3A h

0 fl 2 fl4 0,8 £,8 1.0 h . A

1,-QJA tjW C

f / / /

2.5 2.0 1.5 1.0 0.5 0 0.5 Iß 1.5 1 0 2,5 3.0 I c,A

fr 85Ï /

/

— —

0.8 0,6 Ofi 0.2

uSEsat’V tj ^ 2 0 ° c ^{Use s a t, V tj= 8S°C}

0 0.2 Oft 0.6 0,8

___

___ ___

— —

18 0 0,2 0 4 0 6 0,8 1,0

3.0 2.5 2.0 1.5 1.0 0.5

UcEsatJ 1,-OM t , ‘7BX

Jgg

2.5 2.0 1.5 1.0 0.5

0 0.5 1,0 15 2.0 2.53.0 I C.A

Uccsat.VIl -0.5A

0 0,5 1,0 1,5 2,0 2,5 3,0 1 ,A q q j ¡q f j-

tc.pf m m

ty-8rc

✓ e.

3aBiicnMOCTb ]ianp>i>KciiHii Hacbiuxenna 6a3a-3M irrrep ot tokb 6a3bi

B ase-em itter satu ratio n voltage versus base current

2.0 2 ,5 3 ,0 I C,A

' \

\

\\ V\ \ _ a1 V I

S V

\ ^{~ N}

\ 3 1

\ V

r n 0 / 20 0 AO 0 50 70

h ti,k m05A

r rTS05B \

Ib±0,1A

3ona ycTOftiHBOfi p a ö o ria TpaH3HCTOpOB B HMnynb- CHOM peiKHMe

Z o n e o f tran sisto r stable o p e ratio n in pulse m ode

20 W 60 75

Pcm.W

/7905A

ft j OÍA it«.V

3aBHCMM0CTb CMKOCTM KOJMeKTOpHOTO HCpCXO/ia OT liartpjl- xem ist KOJiJieKTOp-6a3a Tpati3HCTopa FT905A

C o llector-junction cap acitan ce versus collecto r-b ase voltage o f tran sisto r r T 9 0 5 A

0 10 20 30 32 to 50 60 3aBHCHM0CTb Hait60JlbUICit HMnyjIbCHOii MOmUOCTH Ha KOil- jieKTope o t nanpa>KX'Hnsi KOJineKTop-6a3a rrpii paaromHoti TeMnepaType Kopnyca TpaH3HCTopa

M ax im u m pulse p o w er a t co llecto r versus collecto r-b ase voltage a t various tem p eratu res o f tran s is to r case

¡ga sasm aa rf

ÍT9 0 5 A, TT905B

TPAH3HCT0PbI EOJIblUOK MOIIJHOCTH BbICOKOßi MACTOTbl HIGH-POWER HIGH-FREQUENCY TRANSISTORS

n p e je .ib iiu c iiia'teimsi flonycTHMbix po'/KiiMon jKcn.iyaTamm M axim um Values o f Allowable O perating Conditions

( t e a « = — 60. . .+ 7 0 °C)

HanpajKeHiia Mew/iy kojijicktopom h 6;no(i h KOJUieKTOpOM H SMHTTCpOM U CB

Uc.E tn.il,11> B:

C ollector-base a n d collector-em itter voltages,

UcB max* V .

rT 9 0 5 A rT905B

HanpaJKemie mc>k.!y kojijicktopom h s m h ttc p o m nocTOHHHoe hjih HMnyjibCHoe:) 11 npii

HyjieBOM CMCmeifflH3’, B

C ollector-em itter voltage (direct o r pulse21) a t zero bias3’, V

Haripn/Kcime Meatfly kojijicktopomh SMHTTepoM HMnyjibcHoe npii 3anepT0M TpaiisiiCTope IF i ) . *> H-

'-'CEMmax .

C o llecto r-em itter pulse voltage for cu to ff tran sisto r,

Uc eM m a i 4 )' 5>. V :

I~T905A

Tok xoJUieKTopa Ic niax, A C ollector c u rren t, lc A

Tok KOJUieKTopa bpokhmc nepeKJHOHemiJi

^CM max > A

C ollector c u rre n t a t sw itching, ICM A UpHMOii t o k 6a3bl nOCTOJIHHblH HJIH CpeflHHii

I|1 F m a n W a v m a x i A

Base fo rw ard c u rrc n t, co n stan t o r average,

^ B F max» Ib f a vmax:

75 60

60

130 3

, A

0,6 0,6

0 6 p a T H b lii TOK 6 a 3 b t nOCTOHHHblii HJIH CpeflHHH It maxi IjiltAV max. A

Base fo rw ard c u rren t, c o n stan t o r average, Inn max» ^BRAV maxi A

M M iiyjibC H bui npsMOii t o k 6a3bi IBVM max> A Base pulse forw ard c u rren t, Im,M lnax, A H M n y jib C H b iil o6paTHbiii t o k 6a3bi IBEM lliax, A Base pulse reverse cu rren t, IBRM nlax, A M o m i io c T b , p a c c e im a c M a a T p an 3H C T opoM c flOnOJIHHTeJlbHblM TeiUIOOTBOflOM P (tea« = — 6 0 . . . ± 30 0C)C>. 7>. 8>, Bt '

P o w er dissipated by tran sisto r with ad d itio n al heat sink, P mal

(tM„ = - 6 0 . . . + 30 °C )0)- 7)-< \ W

M oiU H O C T b, paCCCHIiaeMaH TpaH 3H C TO pO M 6 e 3 f lo n o j iH H T e j ib iio r o T e n jio o T B O fla

( t a n -60. . . + 25 ° Q , Bt P ow er dissipated by tran sisto r w ithout ad d itio n al h e at sink, Pmax

(tam b= — 6 0 . . . + 25 °C), W TeM nepaTypa nepexofla tj m u, °C Ju n c tio n tem p eratu re, tj m t , °C 0 6 iu e e TeruioBoe conpoTHBjieuHe r p a n sH C T o p a R [bJa, ° C /B t

T o ta l th erm al resistance o f tran sisto r, R (hJa, °C /W

0,6

1,2

85

50

t l ß E =s 0 ,4 B.

:> nPH tp - 10 MC B KJIkViCBOM ICIS! tTMXIVJIbCBOM PCMCHMC.

:l> Rb -e I Om. tp Í 2 0 MKC.

Ö (J * 3.

sj 3a nepnoa He 6ojiec 1 mc. CyMMapHan MoiUHOCTb, paccciuiaeMaa na KOJtneKTop- HOM H SMHTTCplIOM nepCXOÆC, HC flOJlKHa npCBblUJaTb ITpcae-'lbHO aonycTMMOii npw nau iio ii TCMnepaType.

7> tp 3= 10-3 C.

8> ripH tcase = 3 0 .. .70 °C MouiHocTb onpenejiaeT c* n o (Jłop.My.nc:

0 _ 85 ~~ *ca*e mM 1 max ~ 50---[WL

ripn talnh = 2 5 . . .70 VC M omnocTb onpene/iflCTCH no 4jop.viy.ne:

n _ — t;in,i> rłłM

* m ax---jö --- lWJ-

1) Ub e = 0 .4 V .

2J t p >- 10 m s in o n -g ate an d p u lsed m o des.

з) R B < 1 O h m . t p =s 20 /is.

Q > 3.

D u rin g a p erio d o f n o t m o re th a n 1 m s. T o ta l p o w er d issip ated a t c o llecto r a n d e m itte r ju n c tio n sh o u ld n o t exceed th e m ax im u m allo w ab le value a t th e given te m p e ra tu re .

">tp 2s 10^3 s .

A t tenge as 3 0 . . . 7 0 C , th e p o w er is d eterm in ed by fo rm u la :

p 85 — tca8c

1 max--- ^ [WJ.

и) A t tamj, = 2 5 . . .7 0 °C , th e p o w er is ca lcu la ted by fo rm u la : Pmax - — [ WJ .

y R A 3 A H H H TIO n P H M E H E H H K ) H 3K C IL T V A T A IJM M IN S T R U C T IO N S O N U S E

n p i i naiiKe BbIBOflOB HeOÔXOflHMO IipHMeHÎITb TeMnjlOOTBOfl.

B p c M s naiÍKH ne 6 oJiec 3 c n p i i T C M n ep a T y p e b MecTe nailKH n e oojiee 260 C c nocjieflyioLUHM ëbtCTpbiM oxjiajKfleHneM.

MiiHHMaJibHoe flonycTHMoe paccToam ie a o Mecra naiÍKH — 3 MM.

Bo H 3 6 e * a H H e B b ix o f la T p aH 3H C T opa h3 c rp o n n e f lo n y c K a e T c s O T K nioM em ie n e n n 6 a 3 b i n p n HaJiHMHH n a n p ^ e m « M e * a y k o ji- JICKTOPOM H 3M HTTepOM .

H e peKOMeiiflyeTCs n c n o j ib 3 0 B a H n e TpaH3HCTopoB b c x e M a x , b KOTOpwx u e t ib 6 a 3 b i p a 3 0 M K H y T a n o n o cT o sH H O M y TOK-y.

W h en soldering the tran sisto r leads, be sure to use a h e at sink.

T h e soldering tim e should n o t exceed 3 s, the soldering tem p eratu re being n o t h ig h er th an 260 C, and subsequent qu ick cooling should be provided.

T h e m in im u m distan ce to the solder jo in t is 3 m m .

T o avoid failure o f tran sisto r, never cut off the base circuit w hen the co llecto r-em itter voltage is present.

It is n o t recom m ended to use the tran sisto rs in circuits in w hich the base circu it is b ro k en fo r direct current.

TPAH3MCT0PbI BOJTbLUOW MOIIJHOCTH BblCOKOfl qACTOTbl

IT906A, ["T906AIVI

HIGH-POWER HIGH-FREQUENCY TRANSISTORS

OBIUME CBE/J.EMMÍI G E N E R A L

repM annenbie njiocK OCTHbie flHt|)(j)y3HOHHO-cnjiaBHbie p-n-p T p a i i3H C T opbi TT906A , FT906A M n p c f l H a3HaHCHbi a jis i p a S o T b i b arm apaType îunpoK oro npHMeneiuiii.

0([)op.MJienHc:

PT906A — b M eTaJiJio-CTCKJisHiioM K o p n y c e , F T906A M b MeTajiJio-njiacTMaccoBOM Kopnyce.

M acca, r:

TpaiBHCTopa F T 906A He 6 onee 4,5;

TpaH3HCTOpa FT 906A M ho 6 ojiee 7.

H itT e p B a ji T e M n e p a T y p O K p y jK a io u ieii c p e j ib i o t 60 f lo -I- 70 C.

G erm an iu m ju n c tio n diffused-alloy p-n-p transistors TT906A , T T 906A M a re designed fo r o p e ratio n in eq u ip m en t o f wide a p p li­

cation.

M o u n tin g :

TT906A — in a m etal-to-glass case;

T T906A M — in a m ctal-to-plastic case.

M ass. g, m ax :

tran sisto r TT906A — 4.5 ; tran sisto r TT906A M — 7.

A m bient tem p eratu re range — form - 6 0 to + 7 0 ° C .

O C H O B H b lE M H H b l E BA SIC S P E C IF IC A T IO N S 3 . ieKTpit>iecKi(e napaMeTpbi E lectrical P aram eters

3Ha4CHHH PejKH.MbI HiMCpeitHH

napaMCTpw 06o3HaMemiH Value M easuring conditions

Parameters D esignations HC MCHce,

min

He Gojicc,

m ax

E c.

E »r. V

ICM.

1km.

Ib m. A

Rl.

T o k K O JUieKTopa 3 a K p b tT o r o T p a it3 H C T o p a , m A C o l l e c t o r c u r r e n t o f c u t - o f f t r a n s i s t o r , m A

^CEV — 8 75; 0,5* — —

O S p a T H b lit TOK SMHTTCpa, mA E m i t t e r r e v e r s e c u r r e n t , m A

^ebo 15 1,4* — —

C raT H H ecK H ii K03tJ>(j>HUHeHT n ep eflaM H TOKa S t a t i c c u r r e n t - t r a n s f e r r a t i o

30 150 10 5* —

1 HanpjDKCHHC MC/KXiy KOJUieKTOpOM 11 3MHTTCPOM n p n HyjieBOM TOKe 6a.3b i h 3 a fla iiH O M t o k c 3M H T T ep a , B

C o lle c to r-e m itte r v o ltag e a t base cu t-o ff j cu rre n t an d preset e m itte r c u rre n t, V

U(L) CEO 75 — — 5* —

H an p aw em ie Me>Kfly k o j i j i c k t o p o m h 3MHTTepOM

bpeJKtiMe H acuuieiiitii, B

j C o lle c to r-e m itte r s a tu ra tio n v oltage, V

Uce wit — 0,5 — 5;

0,5**

—

i HanpH w em ie M e a c a y 6 a 3oii h X M t m e p o M b pe-

>KHMe nacbiiueHiiM, B

B ase-em itter s a tu ra tio n vo ltag e, V ^ B E *at — 0,7 ^_ 5:

0,5**

— BpeMH paccacbinanHsi b peHtHMe HacbimeHHfl, m c

Survival tim e in sa tu ra te d m ode o f o p e ra tio n , ms

t, — 5 30 0,5** 6

BpeMa B K jn o 'ie m is i, mc

On t i m e , ms ^tflD

30, 0,5*

0.5** 6

9

üäm aTO

TPAH3HCT0PbI EOJIblUOH MOJUHOCTH BbICOKOH TPAH3HCT0Pbl BOJlblilOPï MOIHHUCTH BbICOKOH

IT9 0 6 A, TT906AM l,ACT0Tbl qACT0Tbl TT906A, TT906AM

HIGH-POWER HIGH-FREQUENCY TRANSISTORS HIGH-POWER HIGH-FREQUENCY TRANSISTORS

TuriOBaa iixo/ma« x a p a K T e p H C T H K a b c x e M e c o 6 iukm sm u ttc p o m S ta n d ard in p u t ch aracteristic for co m m o n -em itter circuit

1,6 IM 1,2 1.0 0.8 0.6 OM 02 0

IIBO. A

/ / /

y

i/ , /

y

¹¹

/

V

^/

y Uu.V

02 05 1.0 IM 1.8 22 2.6 3,0

3aBKCHM0CTb 0 6paTH0r0 TOKa 3MHTTepa OT HanpHJKCHHH 6a3a -3MHTTCp F .m itte r re v e rse c u r r e n t v e rsu s b a s e -e m itte r v o lta g e

0.90 085 0.80 0.75 0.70 065 0.60 0.55 0.50 0.45 040 0J5 0.30 025 0.20 0.15 0,10

T . T T ' t

h = S A

....

I

\

0 01 0.2 OJOM 0.5 0.60.70.8 0.9 1.0

3aBiiCHMocTb HanpjT/Kcmist Hacbiuteium K0JuieKT0p-6a3a o t to k b 6a 3 m C ollector-base satu ratio n voltage versus base current

M ow H oerb Ha KOJuieKTope, W : Pow er a t collector, W :

rrocTOfltmaH hjih cpeflHSH P c ( W = — 6 0 . . . + 37,5 °C) d irect o r average, Pc (tea.* = — 6 0 . . . + 3 7 .5 °C) U BB = 0,4 —1,4 V.

tp =s 20 m s, Q 2= 3.

11 Bi.iK.'iio'¡ciinc r p a m n c r o p a ijpohsbohhivm upii l c as 6 A.

l) n p n HanpHjKCHHH KOitncKTOpa 3ancpTOro TpaH 3iicropa hc uo.nee 25 B.

CyMMapnaH MomnoCTf,, pacccHBaeMan Ha 3mh i i cpitOM h kojuicktophom nepexojtax, hc jtojixcEta npem.unan. npcAc.ii.ito nonycTHMofl npn cannent

T e M tie p a T y p c .

IlocTOjinm.iii h jih cpc;imui 3a nepno;i He 6o/iee 2 MC.

tp as 2 m s , Q 3= 3.

H? 3 a n c p n o a hc Go/ice 2 MC n p n t Jt 20 MC.

ITpn tCMC 37,5 °C m o iu h o cti. rpai!3HCTOpa c TcnnooTBoaoM onpc.ieaxeica no (JiopMyjie:

P c. 75 - t„

2,5 - [VVJ.

2,5

M o iu h o c ti. TpaH 3iicropa 6e3 ic n ;i00TB0;ia n p n t amb — 3 7 ,5 .. .70 ° C onpc.-ic.'iH-

c t c hn o (JjopMyne:

max =

P c . a x ^ 7-5- ~ > mb [W l.

50 lu) L s to ms.

= 200 m s ; U CB as 60 V; f== 5 H z.

">

VKA3AUHM n o n P M M E H E H M IO H 3 K C n jIY A T A U H M IN S T R U C T IO N S O N U S E

r ia iiK y BblBOflOB npOH3BOflHTl> c TCnjlOOTBOilOM. B p eM H ItaitK H n e 6o j i e e 3 c npn TeM nepaiype b MecTe naiiKH H e 6o j i e e 250 °C.

M a K c tt M a jtb u o e p ac cT O H H H e M e c T a naiiKH o t K O H ua BbtBO/ta He 6o j i e e 3,5 mm n : i a rT 9 0 6 A M h MituttManbuoe p a c c T o s m n e M eCTa naiiKH BbiBOüOB o t Kopnyca 4 mm a m rT 9 0 6 A .

B p « p a 6 oTe TpaH3HCTopa b itMny/ibCHOM pokhm c b riponecce 3annpaHHH Tpait3ncTopa h c to h h h k 3ann p aio m ero cn rita;ta flOJmeH HMeTb BO3M03KHocTt o 6ecneHitTb 3anHpatotitHii t o k b 6a3y ne MeHee 2 % BMKJitoiaeMoro TOKa K O jrjieK Topa. n p o n e c c paccacu - BaHHJI CMHTaTb 3 aK O it'ieilH b IM IIOCJIC IlO 'SpaC TaltltH Hanpii»CeHI1H Ha KOJiJieKTope Bbtute 10 B.

H e pCKOMeiiflycTcst Hcn0Jib30BaiiHe Tpati3HCTopoB b cxeMax, b KOTopbix uetib 6a3M pa30MKHyTa no nocTom uioM y TOK-y.

UMiiyjibCHaH P CM pulse, PCM„ ,„:

(tp «s 10 m s)5), 1<l) (tp =s 200 m s)1“

l e M n e p a r y p a n ep ex o aa tj nmx Ju n ctio n tem p eratu re, tj

J75 300 75

°C

■>UBE = 0 . 4 - 1 . 4 V.

tp 20 m s, Q 5= 3.

3> C ut-oft‘ th e tra n sisto r a t Iq 6 A.

W ith co llecto r v o ltag e o f cut-ofT tra n sisto r n o t ex ceeding 25 V.

5> T o ta l pow er d issip ated a t em itte r a n d co llecto r ju n c tio n s sh o u ld n o t exceed th e m a x im u m allo w ab le value a t th e given te m p eratu re.

6> D irect o r average d u rin g a p erio d o f n o t m o re th a n 2 m s.

t,, ^ 2 m s, Q 5= 3.

D u rin g a p e rio d o f n o t m o re th a n 2 m s a t t p - 20 m s.

A t tcaae s- 37.5 °C , th e p o w er o f tra n sisto r w ith a h e a t sin k is ca lcu la ted by fo rm u la:

P c ^{75 - t„} ■ IW]

T h e p o w er o f tra n sisto r w ith o u t a h e a ts in k a t tc;ifti. — 3 7 .5 .. .7 0 is ca lcu la ted by fo r m u la :

P c max " 75 — tamb

50 [WJ.

t p s l10 m s.

tp « 200 m s; U c b « 60 V ; f as 5 H z,

W hile soldering the tran s is to r leads, use a heat sink.

T h e soldering tim e should n o t exceed 3 s a t a soldering tem p era­

ture o f n o t hig h er th a n 250 °C.

T he m axim um d istance betw een the solder jo in t a n d the lead end is 3.5 m m fo r tran sisto r FT 906A M , a n d the m in im u m distance betw een the lead solder jo in t a n d tran sisto r case is 4 m m for tra n ­ sistor rT 9 0 6 A .

W h en the tran sisto r o p erates in the pulse m ode, an d w hile it is being disabled, the source o f the d isabling signal should be ab le o f delivering a d isabling cu rren t to th e base eq u al to a t least 2 % o f the sw itched-off collector cu rren t.

T he re so rp tio n process is considered to b e com pleted a fte r the co llecto r voltage rises above 10 V.

It is n o t recom m ended to use the tran sisto rs in circu its in w hich the b ase circu it is b ro k en fo r d irect current.

I lpc.tc ii.m.ic 3iiaHCHHH aonycTiiMbix pevKitMOB sKcii.iyaramni M axim um Values o f Allowable O perating Conditions (‘cw = - 6 0 . . .+ 7 0 CC )

HanpirACHite Me»yty KO-i.neKTopoM h

6a 3oii U CB B 75

C ollector-base voltage, U CB max. v Hanpsr*-emte M exay KOJtJieKTopoM h SMHTTepOM1’, B:

C o llecto r-em itter voltage” , V:

nOCTOflHHOe U CE max direct, U CE itM n y jib C H o e U CEM pulse, U CEM !ual->

HanpHîKeHue MesKfly 6a30fl it 3M nrrepoM

U B E m a x . B

B ase-em itter \o ltag e, U ÜK nuI, V

75

130

1,4

Tok KOiijieKTopa lc nmx. A:

C o llecto r c u rren t, I Cmax, A :

nOCTOJIHHblH HJIH HMnyjlbCHblii B pOKltMC

HacbmteHHa3’ 10

d irect o r pulse in satu rated m ode o f o p e ra tio n 3’

nOCTOHHHbtfi HJIH HMnyjlbCHblii B pOKHMe

iiepeKJHOMeHH» 6

d irect o r pulse a t sw itching

b peiKHMe nepeKJHOHeHH«" 7

a t sw itching4’

T ok 6 a 3bi IE 11UJ.S)’ c), A 1,5

Base cu rre n t, IB max5>- ll>, A

T ok 6a 3bt o6 paTHbtii IBK A 1,5

Base reverse cu rren t 1BB 7>. A

TPAH3HCT0Pbl EOJlblUOH MOIUHOCTH BblCOKOH MACTOTbl

HIGH-POWER HIGH-FREQUENCY TRANSISTORS

HT902A

O E IIillE C B F ./I .F .H I U I G EN ER A L

K p e.M H iteB bie zin(Jj<t)yinonH !.ic n-p -u ip aii3 M C T o p b t K I y O iA n p e /iH a sn a M e n b i ; u ia p a ô o T b i b c x e M a x iiep eK J iio H e in iH , b ycH JiH T ejiax m o u i h o c t h K B ; i n a n a30! ia .

Silicon diffused n-p -u tran sisto rs K T902A a re designed for o p eratio n in sw itching circuits, in SW pow er am plifiers.

M o u n tin g — in a m etal sealed case w ith fixed leads.

11

HT902A

TPAH3HCT0PŁ>I EOJIblIIOfï MOLLJHOCTH BblCOKOK MACTOTbl HIGH-POWER HIGH-FREQUENCY TRANSISTORS

OÿopMJieHHe — B MCTaJiJiHHecKOM repMeiHHHOM Kopnyce XeCTKHMII BWBOflaMH.

YcTOfiHHBOCTb K BHeUJHHM B03AeilCTBH8M:

M H o ro K p a T H tie yaapw c A A K T C A bnocT bio y a a p a 1— 3 m c c y c K o p e n n e M a o 1 5 0 g ,

jiim e iiH b ie narpy3KH c y cK O p cm ic M a o ! 5 0 g + 2 0 % ; HHTepBaJi T e M n c p a T y p Kopnyca o t — 6 0 a o + 1 2 5 °C.

M acca r p a in u C T o p a 25 r.

R esistance So external effects:

m u ltip le im p acts w ith a n im pact d u ra tio n o f 1— 3 m s a t an acceleration up to 150 g;

linear accleratio n u p to 150 g ± 2 0 % ;

case tem p eratu re range — fro m —60 to + 1 2 5 °C.

T ran s is to r m ass — 25 g.

O C H O B H b lE flA H H b lE BASIC S P E C IF IC A T IO N S 3. iC K T p n * ie c K iie n a p a M e T p w

E lectrical P aram eters

napaMeTpw Parameters

06o3iiasc-

3naHeHHfi Value

POKHMbI H JMCpeHHfl Measuring conditions

Designa- tions

He Menee, min

ne 6ojice, max

UcE.

U Îb Ucem.

V

Ic.In.

A

f.

Hz Rbe>

Q

0 6 p a T H b li l TOK KOAAeKTOpa, MA C o lle c to r reverse c u rre n t, m A

^CBO — 10 7 0 * — — —

HaHaAbHblii HMnyAbCHblii TOK KOAAeKTOpa, mA C o lle c to r cut-olT p ulse c u rre n t, mA

^CBSM ^— 60 1 1 0 * * — 5 - ! 0G 50

CraiHHecKHii K034)<t>HUHeHT nepeA ann TOKa S ta tic c u rre n t-tra n s fe r ra iio

h.,tE 15 ^— 10 2 _—

MoAyAb K03<{)<J>HmieHTa nepeaaMH TOKa Ha BbicoKoii

Ihjlel 3,5 10

nacTOTe

M o d u lu s o f h ig h -freq u en cy c u rre n t-tra n s fe r ra tio

1

H an p n * eH n e M e * sy k o a a b k to p o m h s m h ttc p o m b pe-

U ce Eat 2 2 *

0,4*

jkhmc HacbimeniiM, B

C o lle c to r-e m itte r s a tu ra tio n vo ltag e, V HanpHxcemte MCiKay 6a30ii it 3M in repoM , B B ase-em itter v oltage, V

U,„ 2 ₁₀ 2

ri])e,te.ib!ii,ie amiHcmm /tonycTiiMbix pevKiiMOB SKciuiyaTauroi M axim um Values o f Allowable O perating Conditions H anpflxeniie Me*ray 3MnrrepoM h 6a3oii

U BEm.„, , ' , , (t1 = - 5 5 . . . + 125 X ) . B E m itter-base voltage.

U b k ,,« 1’' 41 (t, = —5 5 .. . + 125 °C), V

Hanpfl'AxiHie MejKfly KOJineKTopoM it 6a3oii U c (t, = - 5 5 . . . + 125 X ) , B C ollector-base voltage,

U Cb max1* « j = —5 5 .. . + 125 °C), V

65

W M tiyjibC H oe n a n p fl/K e in ic M e x f l y k o a a c k t o p o m n 3MHTTCPOM U CEM „ „ s ” ' 2> (tj = —55. . . + 125 °C, Reb « s 50 Om). B

C ollector-em itter pulse voltage,

Uce m ,« " '=) (tj = - 5 5 . . . + 125 °C , Re b « 50 O hm s), V

Tok KOJlJlCKTOpa Ic rll>x (tiimb = - 6 0 . . . + 125 °C), A C o llecto r c u rren t, Ic nBX (t.imb - 6 0 . . . + 125 °C ), A

110

ilp i! i j 125 °C iipc;ie.'n,no ¿tonycTHS.tt.ie -ma'icmtu B aiips^eH H ii cHn*aK>TCfl l> A t [; > 125 °C, th e m a x im u m allowable values o f voltages decrease li

.imieuHo ;io 0,5 HOMiiHa.Thnux. n d o w n to 0.5 o f th e ra te d values.

2* rip u cHHycoHiia-nbHoii <J>opMe Hxmyjibca A-’iMie-ibHocTbio He 6oJiee 15 mkc. A t a sine-w ave pulse, w hose duration does not exceed 15 ¿¿s.

12

Bepxnwe rpaHHUbi b w x o a h m x xapaicrepKc- THK B CXeMe C o6tU H M 3MHTTepOM U p p e r b o u n d aries o f o u tp u t ch aracteristics fo r co m m o n -em itter circuit

TmioBbie BbixoAHbie xaparrepHcra- KH B CXeMC c oGlUHM 3MMTTepOM S ta n d ard o u tp u t ch aracteristics for co m m o n -em itter circuit

TnnoBbie BXOAHbie xapaKTepHCTHKit b cxeMe c oSu j iim 3MUTrepoM S tan d ard in p u t characteristics for com m on-em itter circuit

H iokhhc rpaH H U bi b h x o a h m x x a - pakTepHCTHK b cxeMe c o6iu h m 3MHTTCPOM

Low er b o u n d aries o f o u tp u t c h arac­

teristics for co m m o n -em itter circuit

200

150 120 80

4 0 h 2IC

1 i p '/ A

____ _____ _____ - -

" c e s O S W 15 20 25 JO

3aBHCHMOCTb CiaTM4CCKOrO K03(j)- (JiHUHeHTa n ep eA a M it TOKa o t H a- iipa>Ken hh koaAeKTop-3Mnrrep S tatic c u rre n t-tra n sfe r ra tio versus co llecto r-em itter voltage

3aBHCHMOCTb CTaTHHeCKOrO KOScj)- t t m u n e H r a n e p e A a i n TOKa o t TOKa KOAAeKTOpa

S tatic c u rre n t-tra n sfe r ra tio versus collector c u rren t

3aBHCiiM0CTb eMKOCTH KOAAeKTopiioro n ep ex o aa o r nanp«>Keiina K0AAeKT0p-6a3a

C o llector-junction cap acitan ce versus collector-base voltage

3aBticn,M OCTb eMKOCTH 3 M H T T ep H o ro rjepexojja o r na- npUJKCHHH 3MHTTCp-6a3a

E m itter-ju n ctio n cap acitan ce versus em itter-b ase voltage

y

13

KT902A

TPAH3HCT0PŁI EOJlblilOfl MOIIJHOCTH BblCOKOR TPAH3HCT0PbI EOJIblUOft MOLl|HOCTH BblCOKOK MACTOTbl HACTOTbl

HIGH-POWER HIGH-FREQUENCY TRANSISTORS HIGH-POWER HIGH-FREQUENCY TRANSISTORS

HT903A, KT903B

T ok 6a 3bi IB (tamb = — 60. . . + 1 25 °C) Base c u rren t, IB (tMllł = - 6 0 . . . + 125 °C) MOUIHOCTb Ha KOJIJICKI Ope P c

( W =s 50 °C), B r ³⁰

P ow er a t collector, Pc ( t„ ,c «= 50 °C), W TeM nepaTypa n epexoaa tj Ju n c tio n tem p eratu re, tj

150 LC

ripji tcagc = 50.. .125 °C anaHemiH moiuhocth chh/Kíuotch n cootbctctbuh c 4>opMyjiott:

150 — tca»e

* C m a x - 5 L>YJ K th jc

Rthic = 3.3 °C/W.

4J r ip n CHHycoHnajibHoft <f>opMe HMnyjibca imHTcubHOcrbio a o 40 mkc nonycKa- CTCS Ub e = 8 B.

VKA3AHH51 I lO 11P U M E H E HV\IO H 3 K C I I J1YA T A UHM IN S T R U C T IO N S O N U S E

HaiiKa BbiBoflOB np0H3B0flHTca b TeMeHHC hc Do.'iee 10 c.

HaiiKa BbiBOflOB flonycKaeTC« Ha naocKOit n a cra BbiBOflOB T p am iic- TopoB. T eM neparypa rraauaenitsi ripnno«, npHMewieMoro ;uih naiiKit, hc aoaacHa npcBbiiuarb 250 °C.

HaiiKa bjjboaob TpaH3KCTopoB, H3r0T0BJieHHbix b TponHKoyc- TOÜHHBOM HCnOJllieHHH, flOJ]*Ha ITpOH3BOflHTbC!t BblCOKOTeMnepa- TypHbiM ripraoeM (o a o ao h ;tp.) c TeMttepaTypoiî njuusjiennH 2 0 5 .. .250 C c npiiMCHCHMeM cjjaioca: 2 0 % KaHHtjioan, 80 % cm tp T a.

3) A t t ^ j c — 5 0 . . . 125 C , th e p o w er v alues decrease in co m p lian ce w ith fo rm u la:

i, 150 — t CASe 1 C max = ---:--- l w l

Ulijc R lbjc = 3.3 "C /W .

A t a sine-w ave pulse, w hose d u ra tio n is u p to 40 /is, U BE — 8 V is allow ed.

KT903A, KT903B

O E U JH E C B E A K H H H G E N E R A L

K p c M H u e B b te M e 3 a n a a H a p H b i e n - p - n rpam H cropbi K T903A , KT903B n p c f l u a í n a H e i i M m m paöoTH b c x e M a x B b ic o K O H a c T o r a b ix renepaTopoB h y c H .iH T e a e f i m o u j h o c t h a r m a p a T y p b i nm poK oro n p iiM e tte H H H .

0({)opMJieHHe — b MeiaJuiHMecKOM repMentHHOM Kopnyce c »eC T K H M H B b lB O a a M li.

y crO iÍM H B O C T b K BHeUtHHM B03iteÎÎCTBHHM:

MHoroKpaTHbie y a a p w c ;i;u[TCJibnocTMo yaa p a 1— 3 mc c ycKopeHHCM a o 150 g;

jiHHeftHbte Harpy3KH c y c K o p e m te M a o 150 g ± 2 0 % ; itH T e p B a a T e M n e p a T y p OKpy’/Kaiouteit cpeaw o t —40 a o + 85 °C.

M acca T paim tcvopa n e 6 o .n e e 24 r.

S ilicon m esa p la n a r n-p-n tran sisto rs K T903A , K T903B are designed fo r o p e ratio n in circuits o f high-frequency o scillators and p ow er com plifiers o f eq u ip m en t o f w ide a p p licatio n .

M o u n tin g — in a m etal sealed case w ith fixed leads.

R esistance to ex tern al effects:

m u ltip le im p acts w ith a n im p act d u ra tio n o f 1— 3 m s a t an a cceleration u p to 150 g ;

linear acceleration u p to 150 g ± 2 0 % ;

a m b ien t tem p eratu re range — from -—40 to -85 °C.

T ran s is to r m ass — 24 g, max.

14

O C H O B H B IE M H H b l E BASIC S P E C IF IC A T IO N S S .icK rp H M c C K iie n a p a M e T p w Electrical P aram eters

T he lead so ldering should last n o longer th an 10 s. Soldering o f the flat p o rtio n o f tran sisto r leads is allow ed. T h e m elting tem ­ p e ratu re o f the solder em ployed in soldering should n o t exceed 250 °C.

T h e leads o f tropicalized tran sisto rs should be soldered with a high-tem perature solder (tin, etc.), having a m elting tem p e ra tu re of 2 0 5 .. .250 °C , with the em ploym ent o f flux o f the follow ing co m ­ po sitio n :

co lo p h o n y — 2 0 % ; alcohol — 80% .

TPAH3HCT0PbI EOJIblUOFI MOIIJHOCTH BblCOKOPl qACTOTbl HIGH-POWER HIGH-FREQUENCY TRANSISTORS

napaMCTpbi

P aram eters

H anaabH btii ^{t o k} KoaaeKTopa, mA C ollector c u t-o ff cu rre n t, m A 0 6 p a T H b li i TOK 3 M H T T ep a , mA E m itter reverse c u rren t, m A

CraTiMecKHH K03tj)(J>nuneHT nepeaaHH TO K a:

S tatic c u rre n t-tra n sfe r ra tio : KT903A

KT903B

M o ay ab K03<J)(|)nmieHTa n e p e a a H H TOKa na BblCOKOft H3CT0TC

M odulus o f high-frequency c u rre n t-tra n sfe r ra tio HaripflVKCHHC Meatfly KoaaeKTopoM h s m h ttc p o m b p e3KHMe nacbiuteHim , B

C ollector-em itter sa tu ratio n voltage, V EMKOCTb K oaaeK Topnoro n e p e x o a a , n<I>

C ollector-junction cap acitan ce, p F BxoaHoe nanpfl/KCHHe, B Input voltage. V

OÔOlHaHCHHH D esig n atio n s

^21B

lh .„ l

Ucii !

U„

ÎHaSCHM H V alue

lie Menee,

m in

He Gojiee,

15 70

70

50

70 140

2,5

180

Pe>KHMIJ ICIMCPCMHSI M easu rin g co n d itio n s Uc e.

U*,i.

uSS, V

Iß,

70

10

10

30*

10

f, M H z

0,5

2 ; 0,4*

30

n P E Z IE JIb H B IE 3H A H EH M H / lO I iy C T H M b lX P E ÎK H M O B 3 K C IIJIV A T A H M H M A X IM U M V A LU ES O F A L L O W A B LE O P E R A T IN G C O N D IT IO N S

l laiipfl'A'cuHc Mexcay KoaaeKTopoM h Ga ioii. B:

C ollector-base voltage, V : nocTOHHHoe U CB direct, U 0B IMII>

HMnyabCHoe U CBM „„x"

pulse, Ucbm mal,)

HanpsÿKeHHe MejKay KoaaeKTopoM h 3MHTTepOM2> (R be 100 Om) , B:

C ollector-em itter voltage2’ (R n,.; =s 100 O hm s), V : nocTosHHoe U CE

direct, U CEm„

H M n y a b C H o e U CEH p u l s e , U CE5r Ilu„

HanpHxeHHe 3M H rrep-6 a 3a U EB nlax3>, B Em itter-base voltage, U EB „„x3” V Tok KoaaeKTopa Ic mal3>, A C ollector cu rre n t, Ic A

HMiiyabcHbiñ t o k KoaaeKTopa ICJ[ m¡,53 C ollector pulse c u rren t, ICM nlal3’, A

(tp =s 1 1 0 0 ) ... 10 (tp =s 10 /is; Q 10) ... 5 60 M oum ocT b n a KoaaeKTope nocTom niaa

11 Bt- r C max » D 1 •

80 P ow er a t collector, direct Pc ,lml4>, W :

t,,„f = 20 °C 30

tc„ e 85 C

MoutHOCTb b HMnyabce P 0M Bt: Pulse pow er, PCM W :

9

60 = 20 °C 60

toase = 85 C 18

80 T en a o so e conporHBaeHwe nepexoa-Kopnyc

R thic3’, X / Bt 3,33

4 Jun ctio n -case therm al resistance R th)c3’, °C /W

3 TeM nepaTypa Kopnyca tCil!,., C C ase tem p eratu re, t,.M,., °C

85 TeM neparypa n ep ex o aa tj IIiaI, °C

Ju n ctio n tem p eratu re, tj „ „ „ °C

115 i) tj = —40.. .4-70 CC. ripH ti 70 °C HanpjOKCHHC cHHxcaeTCn hmhchho na

10% na Kawaue 10 °C.

rip n pa6oTe TpaH3HCTopoB b cxeMax B 4 rcHepaTopoB h ycmnrrejieft c aMHJiH- Ty^Hoft MOnyjTHUHcii ¿íonycKaeTCfl mfhobchhoc 3HaMCHHe HanpsjKCHHa 3b>'koboíí HacTOTbi HO70 B.

•! Bo B ccM H H i e p s a j i e TeMnepaTyp OKpy*aK>meft c p e ^ b i npw y c n o B H H , mto p a c - c e n B a e M a a M o u j u o c T b h c n p e B b n u a e T M aK C H M aJii.no s o n y c T H M y jo .

4 r i p a H3MCHCHHI1 T C M n e p a T y p u K o p n y c a o t25 f l o 85 °C p a c c e H B a e M a a M O iu H O c ib p a c c iH T b iB a c T c a n o <J»opMy.ne:

n 115 — tca8e

P c m ax ” ó — [W J.

5) TT ^thje

iip n ycnoBHH, HTO A-THTe-ibHOCTb HMnyjibca He ö o .iee 10 mkc h cKBaxcHOCTb He Menee 10, n p ii 3 to m HanpnxceHiic n a K ojineirrope OTKpbiToro TpaH3Hcropa He oojiTKHo npeBbmiaTb 30 R.

—4 0 . . . 4-70 °C . A t tj 70 °C th e v o ltag e decreases linearly by 10 % p er

>>t i o ° c

W h en tra n sisto rs o p e ra te in circu its o f H F o scillato rs a n d am plifiers w ith a m p li­

tu d e m o d u la tio n , a n in sta n ta n e o u s value o f A F v o ltag e u p to 70 V is allo w e d . 3> W ith in en tire am b ien t te m p e ra tu re ran g e, p ro v id e d th e d issip ated p o w er d o e s

n o t exceed th e m a x im u m allo w ab le value.

W ith th e case te m p e ra tu re v ary in g fro m 25 to 85 °C , th e d issip ated p o w er is ca lcu la ted b y fo rm u la :

Pc,n»x=

K thjc

5) P ro v id ed th e p u lse d u ra tio n d o es n o t exceed 10/js a n d o n -o ff tim e r a tio is a t least 10. To th is case th e co llecto r vo ltag e o f o n -tra a sis to r sh o u ld n o t exceed 30 V.

15

1,0 0,8 0,6 ojt 0,2 0

1 11

l 4 .../ 1

1 /

1"

1

1 t

/ / //

Va -0

y

/

1,5 u a p y

% , v

TiinoBbie BXOAHbie xapax- TepucTMKH b cxew e c 0 6 - LUHM 3MHTTCpoM

S ta n d ard in p u t c h aracteris­

tics fo r co m m o n -em itter circuit

3.5 3.0

2.5 2.0

1.5 1,0 0,5

t a KT903A

100/

/ /80

/ 1

' /

' /

Ao

^HO

i

^\

\ /

/

t

//

Y xi 1 '

I r

Vet 5.5 5.0

\ 5

\0 3.5 3.0 2.5 2.0 1.5 10 0,5

¡C’A KT903B

5 10 15 20 25 30 0

/w o

//

Æ

■ y

⁶⁰

/' / /

/ 40

/ / / / /

. .y S y -

/

/ / / K

i f f /

/ —

'

y /s

¥

V

% -

H 6 a

10 12

2.0 1,8 IS I A 1.2 1,0 0,8 0.6

lc ,A K T903A

0,2 loo 1 - 80 /

'50 i

1 _ '4 0

r ' ZQmA

i ^{U ;}

—

3.5

3.0

2.5 2.0 1.5 1.0 0,5\

/ y 100 / / ,

/80 / / / 6 0

1 /

⁴⁰

1/

, r!

t

J

b

T

^z0|2.a-

TiinoBbie BbixoztHbie xapax- TepHCTHKH B CXeMC C oStUHM 3MHrrepoM (Bepxnaa rp a - iihua 9 5 % pa30poca) S ta n d ard o u tp u t ch aracteris­

tics for co m m o n -em itter circu it (u p p e r b o u n d ary o f 9 5 % o f spread)

TunoBbie BbixoAHbie xapax- TepilCTHKH b cxeMe c oChiuim 3MHTTepoM (iiHyKiian rp a - m m a 9 5 % p a 36poca) S tan d ard o u tp u t ch aracter­

istics for co m m o n -em itter circuit (low er b o u n d ary o f 95 % o f spread)

Oqe.V

0 10 20 30 40 50 60 0 10 20 30 40

100 80 60 40 20

A2l£ KT903A

h - 1 A /

/

__

—*

200 160 120 80 45

n2l£ K T9036 " 2IE K T9036

r c --iA

^ - / i

- ^{— •}—

70 60 50 40

n2ie K T903A

Ucb.V 30 0 S 10 15 20 25 30 O S 10 15 20 25 30

3aB H C nM O C T b c r a n iM C C K o r o K 03(J> c|}nm ieuTa n e p e j u m i TOKa o t u a n p H /K e H iis K O J i/ie K T O p -S M iirre p

S tatic c u rre n t-tra n sfe r ra tio versus collector-em itter voltage 20 10

--- U c C - tO V é

/ \

/ ^\

v

1 /

N

^\

/ \

S

' " \ N

\

V .

•«»

80 60 4 0 20 TC.A

U c e - lO V

/ ^\

/ \

!

\

\ V

\ N

s k \ s

/ vs

^ - 0 1,0 2,0 3,0 4,0

k . A 0 1,0 2,0 3,0 4,0 5,0

3aBHCHMOCTb CTclTH'ICCKOTO K03(j)(t>HUHeHTa HCpefla'lH TOKa OT TOK-a KOJi.ncKTopa

S tatic c u rre n t-tra n sfe r ra tio versus collcctor cu rren t

KT903S

3aBncnMOCTb ciarHHecKoro K03(J)(j)imneHTa ne- peaaHH TOica ot TeMnepaTypbi xopnyca

S tatic c u rre n t-tra n sfe r ra tio versus case tem p era­

ture

16

TPAH3HCTOPbI EOJlblUOÏÏ MOU^HOCTM BbICOKOft qACTOTbl

HIGH-POWER HIGH-FREQUENCY TRANSISTORS

KT903A, KT903B

les s , mA 20 ,0

l/ce =60'/

~ 100 Ohm

r ' 1

—

t f

w l

—

7û~5 — •

-4 0 -20 0 2 0 4 0 60 S O , tOO t Case, °C 3aBHCHM0CTb HanaflbHoro TOKa koji- JieKTopa ot TeMnepaTypbi xopnyca C ollector c u t-o ff cu rre n t versus case tem p eratu re

¡200 1000 BOO 6 00 WO 200

Cc.pF

f*2HH2

1 A

& ___

- - - - 0 10 20 30 40 50 60

3aBHCHMOCTb CMKOCTH KOJIJieKTOpilOrO nepexOija ot HanpaJKemw kojijicktop- 6a3a

C o llector-junction cap acitan ce versus collector-base voltage

m o

2500 2000 1500 1000 500 250

ce.pf

\

\ _____

M Ï Ï h

' v

s

~~ --- --- — ,

5 Uc e ,V

3aBH CM M 0CTb eMKOCTH SM U TTCpHO rO n e p e x o a a o t H a n p s c K e n H s i 3 M n r r e p - 6 a 3 a

E m itter-ju n ctio n cap acitan ce versus em itter-b ase voltage

Y K A 3A H H H O O riP M M E H E H M K ) M 3 K C n J iy A T A I I I I H IN S T R U C T IO N S O N U SE

Bo H36e>KaHHe BbixoAa Tpaii3ncTopoB H3 crposi ne A o n y c K a e ro i noHBJiemie u a xoJijieKTope MriiOBeHHbix ithkob HanpHwemisi n to k o b , npeBbiLuaioiiHix npeAeJibHO AonycTHMbie 3HaMeHHsi.

rip n MOHTawce TpaH3iiCTopoB flojiMdia o 6ecneiHBaTbca iie- nOXIBHÎKHOCTb BblBOAOB OTHOCHTejlbHO KOpnyCa H OTCyTCTBHC Ha- rpy30K b MecTe cn aa CTemia c MeTaiuiOM.

T o avoid failure o f tran sisto r, in stan tan eo u s peak voltages and cu rren t a t the collector exceeding the m axim um allow able values are intolerable.

W h en m o u n tin g the tran sisto rs, ensure fixed positio n o f the leads relative to the case an d see th a t n o load is ap p lied to the glass- to-m etal ju n ctio n .

TPAH3HCT0PbI EOJlbUIOfl MOUJHOCTH BblCOKOfl

4ACT0™ KT904A, HT904B

HIGH-POWER HIGH-FREQUENCY TRANSISTORS

OBU IHE C B E /IE H H il G EN ERA L

KpeMHHCBbie 3nMTaKCHanbHo-njianapHbie n-p-n Tpam ncTopw KT904A, K T904E npeAH33Ha'ieHbi a.™ paSoTbi b cxeMax aBTO- r e H e p a T o p o B , y c H /iM T e n e ii m ouihoctm Y K B h ¡XM B aHana30H0B.

O^opMjieiiHe — b xierajijioKepaMHHecKOM repMeTHMHOM xop- nyce c xecTKHMn BbiBOAaMn h TeroiooTBoamiiHM icpene>KHbiM BH11T0M.

Silicon epitaxial p la n a r n-p -n tran sisto rs K T904A , K T904E are designed fo r o p e ratio n in the circu its o f self-oscillators a n d p ow er am plifiers o f the U S W a n d decim etric- w ave bands.

M ounting — in a m etal-to -ceram ic sealed case w ith fixed leads and a h eat-ab stractio n fastening screw.

-012,7

'<PS,4 - £

17

TPAH3HCT0PbI EOJIbUIOfi MOIHHOCTH BblCOKOfl TPAH3HCT0PbI EOJIbUIOtf MOIIJHOCTH BblCOKOfl

HT904A, HT904B L,ACT0TbI l|ACT0Tb' HT904A, KT904B

HIGH-POWER HIGH-FREQUENCY TRANSISTORS HIGH-POWER HIGH-FREQUENCY TRANSISTORS

yciOlÎMHBOCTi. K BHeiUHHM B03fleÎ!CTBHHM:

MHoroKpaTHbie yflapbi c ;w in e jib n o c r b io yflapa 1— 3 mc c

YCKopcH hcm a o 150 g;

jiHHciinbre narpyiKH c ycKopemieM flo 150 g :t 20 %;

HHTepBaJi TeMnepaTyp OKpywaiouieft cpc/u.i o t — 40 flo + 85 °C.

M acca T pam ncT opa hc 6 o.nee 6 r.

O C H O B H b lE M H H b l E B A SIC S P E C IF IC A T IO N S

R esistance lo ex tern al effects:

m ultiple im p acts w ith a n im pact d u ra tio n o f 1— 3 m s at an

To k K O JiJieK TO pa, A : Collector c u rren t, A : acceleratio n u p to 150 g ;

linear acceleratio n up to 150 g ± 2 0 % ; am b ie n t tem p eratu re range — from — 40 to T ran sisto r m ass — 6 g. m ax.

■85 °C.

nOCTOHHHblH I c mox1) 0,8

direct, ICll,al,>

HMHyjlbCHblft 1CM m.,K” 1,5

pulse, IC3I m„ 1> '

TOK 6a 3bl IB A 0,2

base cu rren t, IB Illllx1\ A M o m n o c T b n a K O JiJieK T ope P c , ( U ., = - 4 0 . . . + 40 °C), Bt i.ieKipiiMecKiie n a p a M e T p u

E lectrical Param eters

P ow er a t collector, P0 max"’

(t,m b= —4 0 . . . + 4 0 °C ), W Te.vineparypa Kopnyca tcaso4>, C C ase tem p eratu re, t„„,4), °C TeMnepaTypa n ep ex o aa t,4’, C Ju n ctio n tem p eratu re, tj4>, °C

TennoBoe co n p o i m memic nepexofl-Kopnyc Rthjo °C /Bt

Junction-case th erm al resistance, R thio C /W

85

1 2 0

16

I Ipe.ie.ihH hie 3 iia H e im n f l o n y c n i M b i x pesKHMOB 3 K c n Jijra r a m i i i M axim um Values o f Allowable O perating Conditions HanpsrA'cmie M esKiiy k o j i j i c k t o p o m h Caioii T I u c n u - °R

C ollector-base voltage, U CB V

3naHCHHH PcHvHMbi HXMepemifl

riapaMCTpw F aram eters

OGoinaMciuiH

D esig n atio n s

V alue M easu rin g co n d itio n s

n e MCHCC, m in

h c Ckvrtec, m ax

UCB.

UÎk. t.*#*UÉI.

fccV

l o Ik- mA

r, M H z

HanaJibHbiii tok KOJiJieKTOpa, mA C o lle c to r c u t-o ff c u rre n t, m A

^CBS — 1,5 60* — —

OSpaTHblil TOK SMHTTepa, mkA E m itte r reverse c u rre n t, fiA

^KBO — 300 4»*

KpHTHHecKHfi t o k KOJiJieKTOpa, mA: 100 C o lle c to r c ritical c u rre n t, m A :

^rrit 10

K T904A

KT904B —

400

300 — — —

M oflyjib K03(l)(})HUHeHTa nepeflaHH TOKa Ha BblCOKOii M acroic:

M o d u lu s o f h ig h -freq u en cy c u rre n t-tra n s fe r ra tio :

|h 2iJ — 28*** 200 100

KT904A K T 904E

__ 3,5

3 — —

H a n p s s c e H w e M ea tfly K o n jieK T o p o M h SM HTTepoM npit nyjieB O M T o n e 6a3bi h 3aflaHHOM TOKe SMHTTepa, B

C o lle c to r-e m itte r v o ltag e a t base c u t-o ff c u rre n t a n d e m itte r p re set c u rre n t, V

U (L) CEO 40 — — 200 —

riOCTOilHHafl BpCMCHU HeHH o S p a T H O ti CBS3H H a BblCOKOii nacTOTc, rtc

T im e c o n s ta n t o f feed b ack c irc u it a t high freq u en cy , ps:

ï'b.liQ- — — 10 30* 5

K T 904A

K T904B — 15

20 — — —

EMKOCTb KOJi.neKTopHoro n ep ex o fla, n<I>

C o lle c to r-ju n ctio n c ap a citan c e, p F Bbixoflna« M om uocTb, Bt: O u tp u t p o w er, W :

C c

Pout —

12 28***

28*** —

5 400

K T904A KT904B

3

2,5 — — — —

lj flonycK aeicn hhkobocshshckhc HanpawcHiiH ;io 70 B.

-J Bo »com imTepBajie TeM neparyp n e p e x o a a o r —40 jio + 1 2 0 C n p n >c;iOBii!i.

m o pacccHBacMan moiiihocti. ne npeB uuiaeT npeaeJituoH .

JXjih flKHaMH'iecKoro pe%HMa. r ip n Te.MitepaType K opnyca b [ipc;ic:iax o r 40 ;io 85 °C MOlUHOCTb CHH.K.'tCTCH B COOTBCTCTBHÎI C 41Op\iyJ10ii;

P c = i ^ i s 2 L « [ W ] .

*MhJc PaccHiiTbibaeTCH no <J)op.Myne:

tj max ~ *case + ^thjc ’ Pc max-

P eak voltage u p to 70 V is allow ed.

2> W ith in th e en tire ju n c tio n te m p e ra tu re ran g e fro m —40 to + I 2 0 r C , pro v id ed th e dissip ated p o w er do es n o t exceed th e m a x im u m allo w ab le value.

3> F o r d y n am ic m o d e o f o p eratio n . A t case te m p eratu res ran g in g fro m 4 0 to 85 °C , th e p o w er decreases in co m p lia n ce w ith fo rm u la :

120 - Pc - -

HanpiDKCHne Meacoy kojuicktopomh 3mhttcpom

C o llecto r-em itter voltage, 60 U CE -> (R Be « 100 O hm s), V

Hanpsi3KeKne Meatfly sM urrepoM k 6a3oii r T ■> R

U E B m a x ; a

E m itter-base voltage,

60 U EB V

C alcu la ted by fo rm u la : tj max :

Rthjc

cajte K-thJi [W].

P c il

i s . m / t

A Tmioisast nxoanasi xapaKTepncrnk'a b cxeMe c o 6uihm SMiirrepoM S ta n d ard input ch aracteristic fo r co m m o n -em itter circuit

Ip .m A

T m i o u a i i B xoflH aM x ap a K T e p H C T H K a b c x e M e c o 6 m e i i S a s o i i

S tandard in p u t c h aracteristic for com m on-base circuit

h , A 0,7 0,6 0,5 OM 0.3 0,2 0,1

8

/ ^ 6

1 /

^ — - 4

1 •--- --- 2

r .. - V im A

^ ____ --- — - - — — — --- _{U c i , V}

10 15 20 25 30

B epxm ie rpaHHUbt Bbixoanbix xapaKTcpiicniK b cxeMe C o 6 lUHM 3MHTTCPOM

U p p e r b o u n d aries o f o u tp u t ch aracteristics fo r com m on- em itter circuit

T H n o B b ie B b ix o flH b ie x ap a K T e p u C T H K H b c x e M e c o 6 l h h m s m h t t c p o m S ta n d ard o u tp u t ch aracteristics for co m m o n -em itter c ircuit

0.6 0.5 0.4 0.3 0 ,2 0.1

I c .A 1 ° '

^ 8

/ . 6

y ' ____—-

~~ —~ -4 1 r „ Im Ao.s 5 10 15 20 2 5 30 U ce/

HmXCHHC J paH H U b l BblXOflHbIX XapaKTepHCTHK b cxe.Me c oGiuhm 3m h ttc p o m

L ow er b o u n d aries o f o u tp u t characteristics fo r co m m o n -cm ittcr circuit

18 19