<~>c.mL- Conductor 5P^ocluct*., Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
2N1671B
Silicon Unijunction
Transistors
TELEPHONE: (201) 378-2922 (212)227-6005 FAX: (201) 376-8960
*ALl LEADS INSULATED FROM CASE.
•otmwt
..Ml (> U-*| MM. C
NOTES A. This zone is controlled for auto- matic handling. The variation in actual diamclcrwilhin this zone shall, not exceed 0.010.
B. Measured (ram mai, diameter ol the actual device.
C. The specified lead diameter ap- plies in the tone between 0.050 and 0.250 from the base seal. Between O.ZJOand 1.5maximum of 0.021 diam>
eter is held. Outside of these zones the lead diameter is not controlled.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED.
absolute maximum ratings (25°C)
RMS Power Dissipation RMS Emitter Current Peak Emitter Current Emitter Reverse Voltage Intcrbnsc Votlngo
Operating Temperature Range Stornjro Triupornture Rnnga
450 mw 50 ma
2 nm pores 30 'volts .35 volts -OB'C-to + 140'C -fifi'C to +160*0
electricar characteristics (25°C)
PARAMETER
Intrinsic StnndofT Ratio (V,. = 10V) Interbasc Resistance (Vn» = 3V, In = 0)
Emitter Saturation Voltage (VP, = 10V, IK =.50 ma) Modulated Interbasc Current (V»p = 10V, IK = 50 ma) Emitter Reverse Current (Vm* = 30V, Im = 0) Peak Point Emitter Current (V» = 25V) Valley Point Current (Vf, = 20V, R« = 1000) Base-One Peak Pulse Voltage
SYMBOL
t RkRA
VK(SAT)
U(MOD) IKII Ir
v,,», I»
MIN. MAX.
0.47 O.C2 4.7 0.1
5 0.8 22
0.2 0 8 3.0
UNITS
Kfl
voll»
ma /«»
/««
ma volU
