T S G S - T H O M S O N
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TR IG G E R DIO D ES
A P P LIC A TIO N S
Thyristors and triacs triggering.
A D V A N TA G E S
High reliability glass passivation insuring parame
ter stability and protection against junction conta
mination
ABSO LUTE RATINGS (limiting values)
Symbol Param eter Value Unit
P Power Dissipation on Printed Circuit (L = 10 mm) T a = 50 °C 150 mW Itrm Repetitive Peak on-state Current t p = 20 pS
F = 100 Hz
2 A
T stg Storage and Operating Junction Temperature Range - 40 to 125 °C
Ti - 40 to 110 °C
THERM AL RESISTANCES
Symbol Param eter Value Unit
Junction-ambient 400 °C/W
Rth 0-1) Junction-leads 150 °c/w
February 1989 1/3
DB 3/DB 4
ELECTRICAL CH ARACTERISTICS ( T ] = 25 °C)
Symbol Param eter T est C onditions Types Min. Typ. Max. Unit
Vbo Breakover Voltage* C = 22 nF**
See diagram 1
DB3 28 32 36 V
DB4 35 40 45
[I+Vb oH - VboI] Breakover Voltage Symmetry
C = 22 nF**
See diagram 1
± 3 V
|AV±| Dynamic Breakback Voltage*
A l = [Ibo to If= 10 mA]
See diagram 1
5 V
Vo Output Voltage* See diagram 2 5 V
Ibo Breakover Current* C = 22 n F " 100 pA
tr Rise Time* See diagram 3 1.5 ps
Ib Leakage Current* Vb = 0.5 Vb o max See diagram 1
10 pA
* Electrical characteristic applicable in both forward and reverse directions.
** Connected in parallel with the device.
DIAGRAM 1 : Current-voltage characteristics.
D88DB34-1
DIAGRAM 2 : Test circuit for output voltage. DIAGRAM 3 : Test circuit see diagram 2.
Adjust R for Ip = 0.5A.
^ 7
SGS-THOMSONMcnoascniQMCs
2/3
DB 3/DB 4
0 50 100
Fig. 1 - Power dissipation versus ambient temperature (maximum values).
Fig. 2 - Relative variation of V g o versus junction temperature (typical values).
F . U I . . . .. M M I I i 1 . . . .
10 102 103 10*
Fig. 3 - Peak pulse current versus pulse duration (maximum values).
PAC K A G E M E C H A N IC A L DATA DO 35 Glass
12,7 m in 3,05 12,7 m in
' 4,50
---i t--- ■ / /
--- ~7-/ — 3
— / / --- --- 7 A — ;
0 0,458 0 0,458
0,558 0,558
0 1,53 2 ,0 0 7/
f ZT SGS-THOMSON
^ 7 # M8Cfl@®JlCirR@8WC$
W eight: 0.15 g.
Marking : clear.
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