'JEIISU , U na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
BLW79
U.H.F. POWER TRANSISTOR
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.
The transistor is housed in a '/!" capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Tn - 25 °C in an unneutralized common-emitter class-B circuit mode of operation
c.w.
c.w.
VCE
V12,5 12,5
f MHz 470
175
PL w
2 2
dB
> 9,0 typ. 13,5
%
> 60 typ. 60
ii 3,5 + jO,4 4,2-j3,4
YL
mS28-J38 25-J24
MECHANICAL DATA Fig.1 SOT122A. 5,9
* 5,5 r-(4x)
Dimensions in mm
1,52
*\ 7; 6,35
8-32UNC /-
f -pb
3,25 2,80 12,0
11,0 ~"
-^0,14
/ metal
5,6 max
Torque on nut: min. 0,75 Nm Diameter of clearance hole in heatsink: max. 4,2 mm.
(7,5 kg cm) Mounting hole to have no burrs at either end.
max. 0,85 Nm De-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole.
When locking is required an adhesive is preferred instead of a lock washer.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of"going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders,
Quality Semi-Conductors
BLW79
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC134) Collector-emitter voltage (Vgg = 0)
peak value VCESM max 36 V
Collector-emitter voltage (open base) ^CEO max ^ V Emitter-base voltage (open collector) VEBO max 4 V Collector current (d.c.) IQ max 0,5 A Collector current (peak value); f> 1 MHz ICM rnax 1,5 A Total power dissipation (d.c. and r.f.) up to T^ = 70 °C ?tQt max 8,5 W
7 Z 7 7 1 4 0
(A)
'c
0,7 0,6 0,5 0,4
0,3
0,2
0,1£
D.C. SOAR „__ — i Th = 70 °C
> 6 7 8 9 10 w„,- (V) 2t
ID
Prf (W)
10
5
n -
r,t. power dissipat on
continuous operation time operation durinc
VCE< 16,5V f > 1 MHz
erate by 1,066 W/K
S-J-4-- 1 J X and she
mismal
>rt ch
S,
Fig.2.
50 Th (°
Fig.3.
100
Storage temperature
Operating junction temperature
'stg -65 to+150 °C max 200 °C
THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink
Rth j-mb Rth mb-h
14,5 K/W 0,6 K/W
BLW79
CHARACTERISTICS Tj = 25 °C
Breakdown voltages Collector-emitter voltage
VBE = 0; lc = 5 mA Collector-emitter voltage
open base; lc = 25 mA Emitter-base voltage
open collector; IE = 2 mA Collector cut-off current
: = 0; VCE = 17 V D.C. current gain *
1C = 250 mA; VCE = 5 v
Collector-emitter saturation voltage * lc = 750mA; IB = 150mA Transition frequency at f = 500 MHz *
lc = 250 mA; VCE = 12,5 V lc = 750 mA; VCE = 12,5V Collector capacitance at f - 1 MHz
IE = i
e= 0; VCB -12,5 v
Feedback capacitance at f = 1 MHz lc = 20mA; VCE = 12,5V Collector-stud capacitance
V(BR)CES > 36 V
V(BR)CEO > 17 v V(BR)EBO > 4 V
ICES < 2 mA
> 10 typ 35
typ 0,6 V
typ 1,5 GHz typ 1,0 GHz
vCEsat
typ 8 pF
typ 3,6 pF typ 1,2 pF
