Diodes type R52 are of modern design with internal spring loaded contacts and pressure welded glass- to-metal seal. Designed for use in power electronic circuits and equipment under normal operating conditions.
KEY PARAMETERS
U
RRMup to 1400 V
I
F(AV)100 A
I
FSM2200 A t
rrdown to 1μs
FEATURES
all diffused design high current capabilities high surge current capabilities high rates voltages
low thermal impedance
tested according to IEC standards compact size and small weight
APPLICATION
Free Wheeling Diode Resistance Welding
Fast recovery rectifier applications
Designed for use in high power industrial and commercial rectifying circuits where high currents are encountered and high reliability is essential.
Outline type code: JEDEC DO-205AC
See package details for further information
When ordering please refer to device code builder presented below.
Please use the complete part number when ordering, quote or in any future correspondence relating to your order.
R52-100-
ELECTRICAL PARAMETERS
Voltage ratings
Voltage class URRM URSM IRRM
V V mA
04 400 500
30
06 600 700
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
Recovery time codes
trr code 5 6 7
trr [μs] 2,0 1,6 1,0
voltage class (hundreds of volts)
Electrical properties
Parameter Unit Test conditions Value
Average forward current
@ case temperature
IF(AV) A 100
Tc °C 75
RMS forward current IF(RMS) A 157
Surge current IFSM A Tj=Tjmax, UR=0,8URRM,
tp=10ms 2200
I2t – value I2t kA2s 24
Forward voltage drop max. UFM V Tj=25°C, IFM=314A 1,90
Treshold voltage UF(T0) V 1,31
Slope resistance rF mΩ 1,90
Reverse recovery time trr μs Tj=25°C, IFM=100A,
diR/dt=12,5A/ μs 1,0 ... 2,0 Typical recovered charge Qr μC Tj=25°C, IFM=100A,
diR/dt=12,5A/ μs 20
Termal properties
Parameter Unit Test conditions Value
Thermal resistance, junction to
case RthJC °C/W DC 0,25
Thermal resistance, case to
heatsink RthCS °C/W 0,12
Operating junction temperature Tjmin...Tjmax °C 125
Storage temperature Tstg °C -40...+150
Mechanical properties
Parameter Unit Value
Mounting torque M Nm 14 ... 17
Weight m g 130
Package details
For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless stated otherwise.
Do not scale.
CHARACTERISTICS
Power loss characteristics IF(AV), A
0 20 40 60 80 100 120 140 160
PF(AV), W
0 50 100 150 200 250 300
rec.60o
rec.120osin.180orec.180o
DC
Case temperature ratings IF(AV), A
0 20 40 60 80 100 120 140 160
TC, oC
50 60 70 80 90 100 110 120 130
rec.60o
rec.120o
rec.180o sin.180o
DC
IFM, A
100 1000 10000
UFM, V
1 2 3 4 5 6
Tj=Tjmax
Forward characteristic
n
1 10 100
IFSM, [kA]
0,5 1,0 1,5 2,0 2,5
Tj=Tjmax UR=0,8URRM
Non-repetitive surge current rating
Reverse charge characteristics; trr group: "6"
diR/dt, A/ms
0 20 40 60 80 100
Qr, mC
0 10 20 30 40 50 60 70 80
Tj=125oC
ITM= 300 A 200 A 100 A
Reverse current characteristics; trr group: "6"
diR/dt, A/ms
0 20 40 60 80 100
IRM, A
0 20 40 60 80 100
ITM= 300 A 200 A 100 A Tj=125oC
t, s
0,001 0,01 0,1 1 10
Zth(t), oC/W
0,001 0,01 0,1 1
Transient thermal impedance
HEATSINKS
LAMINA S.I. has its own proprietary range of extruded aluminium heatsinks designed to optimise the performance of our semiconductors with natural and forced air flow.
POWER ASSEMBLY CAPABILITY
LAMINA S.I. provides a support for those customers requiring more than a basic semiconductor and offers precisely assembled Power Blocks according to factory or customer standards.
