BF556

DATA SHEET

Product specification

Supersedes data of April 1995

File under Discrete Semiconductors, SC07

1996 Jul 29

BF556A; BF556B; BF556C

N-channel silicon junction

field-effect transistors

FEATURES

• Low leakage level (typ. 500 fA)

• High gain

• Low cut-off voltage.

APPLICATIONS

• Impedance converters in e.g. electret microphones and infra-red detectors

• VHF amplifiers in oscillators and mixers.

DESCRIPTION

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

PINNING - SOT23

PIN SYMBOL DESCRIPTION

1 s source

2 d drain

3 g gate‘

CAUTION

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.

Fig.1 Simplified outline and symbol.

Marking codes:

BF556A: M84.

BF556B: M85.

BF556C: M86.

handbook, halfpage

s g d

2 1

3

MAM036 Top view

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V_DS drain-source voltage (DC) − ±30 V

V_GSoff gate-source cut-off voltage I_D= 200µA; V_DS= 15 V −0.5 −7.5 V

I_DSS drain current V_GS= 0; V_DS= 15 V

BF556A 3 7 mA

BF556B 6 13 mA

BF556C 11 18 mA

P_tot total power dissipation up to T_amb= 25°C − 250 mW

yfs forward transfer admittance V_GS= 0; V_DS= 15 V 4.5 − mS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm².

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm².

STATIC CHARACTERISTICS

T_j= 25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V_DS drain-source voltage (DC) − ±30 V

V_GSO gate-source voltage open drain − −30 V

V_GDO gate-drain voltage (DC) open source − −30 V

I_G forward gate current (DC) − 10 mA

P_tot total power dissipation up to T_amb= 25°C; note 1 − 250 mW

T_stg storage temperature −65 150 °C

T_j operating junction temperature − 150 °C

SYMBOL PARAMETER VALUE UNIT

R_{th j-a} thermal resistance from junction to ambient; note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V_(BR)GSS gate-source breakdown voltage I_G=−1µA; VDS= 0 −30 − − V

V_GSoff gate-source cut-off voltage I_D= 200µA; VDS= 15 V −0.5 −7.5 V

I_DSS drain current V_GS= 0; V_DS= 15 V

BF556A 3 − 7 mA

BF556B 6 − 13 mA

BF556C 11 − 18 mA

I_GSS gate leakage current V_GS=−20 V; VDS= 0 − −0.5 −5000 pA

yfs forward transfer admittance V_GS= 0; V_DS= 15 V 4.5 − − mS

yos common source output admittance

V_GS= 0; V_DS= 15 V − 40 − µS

DYNAMIC CHARACTERISTICS

T_amb= 25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS TYP. UNIT

C_is input capacitance V_DS= 15 V; V_GS=−10 V; f = 1 MHz 1.7 pF

V_DS= 15 V; V_GS= 0; f = 1 MHz 3 pF C_rs reverse transfer capacitance V_DS= 15 V; V_GS=−10 V; f = 1 MHz 0.8 pF V_DS= 15 V; V_GS= 0; f = 1 MHz 0.9 pF g_is common source input conductance V_DS= 10 V; I_D= 1 mA; f = 100 MHz 15 µS V_DS= 10 V; I_D= 1 mA; f = 450 MHz 300 µS g_fs common source transfer conductance V_DS= 10 V; I_D= 1 mA; f = 100 MHz 2 mS

V_DS= 10 V; I_D= 1 mA; f = 450 MHz 1.8 mS g_rs common source reverse conductance V_DS= 10 V; I_D= 1 mA; f = 100 MHz −6 µS

V_DS= 10 V; I_D= 1 mA; f = 450 MHz −40 µS g_os common source output conductance V_DS= 10 V; I_D= 1 mA; f = 100 MHz 30 µS V_DS= 10 V; I_D= 1 mA; f = 450 MHz 60 µS V_n equivalent input noise voltage V_DS= 10 V; I_D= 1 mA; f = 100 Hz 40 nV/√Hz

Fig.2 Drain current as a function of gate-source cut-off voltage; typical values.

VDS= 15 V.

handbook, halfpage

0 4 8 12 16 20

0 1 2 3 4 5 6 7

MRC154 IDSS

(mA)

VGSoff (V)

Fig.3 Forward transfer admittance as a function of gate-source cut-off voltage; typical values.

VDS= 15 V; ID= 1µA.

handbook, halfpage

MRC156

0 2 4 6 8 10

0 1 2 3 4 5 6 7

VGSoff (V) Yfs

(mS)

Fig.4 Common-source output conductance as a function of gate-source cut-off voltage;

typical values.

VDS= 15 V.

handbook, halfpage

0 −2 −4 −8

100

0 80

MRC153

−6 60

40

20 Gos (µS)

VGSoff (V)

Fig.5 Drain-source on-state resistance as a function of gate-source cut-off voltage;

typical values.

VDS= 100 mV; VGS= 0.

handbook, halfpage

0 2 4 8

300

100

0 200

MRC155

6 RDSon

(Ω)

VGSoff (V)

Fig.6 Typical output characteristics; BF556A.

handbook, halfpage

0 4 8 16

5

0 4

MRC145

12 3

2

1

VDS (V) ID

(mA)

−0.5 V

−1 V VGS = 0 V

Fig.7 Typical output characteristics; BF556B.

handbook, halfpage

0 4 8 12 16

16

12

4

0 8

MRC146

VDS (V) ID

(mA) VGS = 0 V

−2.0 V

−0.5 V

−2.5 V

−1.0 V

−1.5 V

Fig.8 Typical output characteristics; BF556C.

handbook, halfpage

0 4 8 16

25

0 20

MRC147

12 15

10

5

VDS (V) ID

(mA)

−1 V

−2 V

−3 V

−4 V

−5 V VGS = 0 V

Fig.9 Typical input characteristics.

handbook, halfpage

−6 −4 −2 0

30

10

0 20

MRC148

VGS (V) ID

(mA)

BF556C

BF556B

BF556A

VDS= 15 V.

handbook, halfpage

−8 −6 −4 −2 0

10³

10²

1 10

10⁻¹

10⁻²

10⁻³

MRC149 ID

(µA)

VGS (V) BF556C BF556B BF556A

handbook, halfpage−10²

−10⁻²

−10⁻¹

−1

−10

20 12

4 8

0

MRC151

16 VDG (V) IG

(pA) ID = 10 mA

IGSS

1 mA

0.1 mA

Fig.12 Gate current as a function of junction temperature; typical values.

handbook, halfpage10³

10⁻¹ 1 10 10²

150 50

−50 0

MRC150

100 IGSS

(pA)

Tj (°C)

VDS= 0; VGS=−20 V.

Fig.13 Power derating curve.

MRC166

0 100 200 300

0 50 100 150

Ptot (mW)

Tamb ( C)^o

Fig.14 Reverse transfer capacitance; typical values.

VDS= 15 V.

handbook, halfpage

0 0.2 0.4 0.6 0.8 1

–10 –8 –6 –4 –2 0

Crs (pF)

VGS (V) MRC134

Fig.15 Input capacitance; typical values.

VDS= 15 V.

handbook, halfpage

MRC140

0 1 2 3

–10 –8 –6 –4 –2 0

C is (pF)

VGS (V)

Fig.16 Common-source input admittance; typical values.

VDS= 10 V; ID= 1 mA; Tamb= 25°C.

handbook, halfpage

MRC142 10²

10⁻²

10 10² 10³

10⁻¹ 1 10

bis

gis gis, bis

(mS)

f (MHz)

Fig.17 Common-source transfer admittance;

typical values.

VDS= 10 V; ID= 1 mA; Tamb= 25°C.

handbook, halfpage

MRC141 10

1

10⁻¹

10 10² 10³

−bfs gfs gfs, −bfs

(mS)

f (MHz)

handbook, halfpage

MRC144

−10⁻³

−10⁻²

10 10² 10³

−10⁻¹

−1

−10

brs

grs brs, grs

(mS)

f (MHz)

handbook, halfpage

MRC143 10

1

10⁻¹

10⁻²

10 10² 10³

bos

gos bos, gos

(mS)

f (MHz)

Fig.20 Equivalent noise voltage as a function of frequency.

VDS= 10 V; ID= 1 mA.

handbook, halfpage

10 10² 10³ 10⁴ f (Hz) 10⁵ 10³

10²

10

1 Vn (V)

MRC278

PACKAGE OUTLINE

Fig.21 SOT23.

handbook, full pagewidth

MBC846 10

max o

10 max

o

30 max

o 1.1 max 0.55 0.45

0.150 0.090

0.1 max

2 1

3

M 0.1 A B 0.48

0.38

TOP VIEW

1.4 1.2

2.5 max 3.0

2.8

M 0.2 A A

B

0.95 1.9

Dimensions in mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.