BLV62

, D nc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

UHF linear push-pull power

transistor BLV62

FEATURES

• Internal matching for an optimum wideband capability and high gain

• Poly-silicon emitter-ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability.

DESCRIPTION

Two npn silicon planar epitaxial sections in push-pull structure, intended for use in linear television transmitters (vision or sound).

The device is encapsulated in a 4-lead SQT262A2 flange envelope with 2 ceramic caps. The common emitter is connected to the flange.

PINNING - SOT262A2

PIN 1 2 3 4 5

DESCRIPTION collector 1

collector 2 base 1 base 2 emitter

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common emitter test circuit.

MODE OF OPERATION c.w. class-AB

f (MHz) 860

VCE

(V) 28

PL

(W) 150

OP (dB)

> 8.5 typ. 9.5

1c

(%)

> 45 typ. 50

AGp

(dB) (note 1)

< 1 typ. 0.5

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, CCIR system).

PIN CONFIGURATION

1 /"I

3 4 Top view

Fig.1 Simplified outline and symbol.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

UHF linear push-pull power

transistor BLV62

LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134).

SYMBOL VCBO , VCEO

VSBO

'c> 'c(AV)

PM

Tag

T,

PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation

storage temperature range junction operating temperature

CONDITIONS open emitter open base open collector DC or average value DC operation;

Trt = 25 °C (note 1)

MIN.

- - - -

-65 -

MAX.

60 28 3 12.5 320

150 200

UNIT V V V A r

w

"C

°C

Note

1. Total device, both sections equally loaded.

50

IG (A)

10

1

Total de\

Tr

~

~

^

70 1

V

mb

\i

°(

VCE (V)

/ice, both sections equally loaded.

Fig.2 DC SOAR.

100

p 350 Mot

(W)300

250

200

150

100

50

0 C

Total dev (I) Contir (II) Conti (lll)Shor

MA3W

X

"V

—

"^

X v,

—

I.

-^ ^ r

S. I

^

>c

->

i

^k i i

- P^

^

;=»,

L^>

,_ -»,

^

—

—

"v.

20 40 60 80 100 120

Th <°C)

nee, both sections equally loaded.

iuous DC operation, nuous RF operation.

t time operation during mismatch.

3 Power/temperature derating curve.

UHF linear push-pull power

transistor BLV62

THERMAL RESISTANCE SYMBOL

fV i-mb(DC]

"lh j-mb(RF)

R(h mb-h

PARAMETER from junction to mounting base

from junction to mounting base

from mounting base to heatsink

CONDITIONS PW = 320 W;

T^-25-C (note 1) Pw = 350 W;

Trt = 25=C (note 1) (note 1)

MAX.

0.55

0.5

0.15

UNFT K/W

KM

K/W

Note

1. Total device, both sections equally loaded.

CHARACTERISTICS

Values apply to either transistor section; Tj = 25 °C.

SYMBOL VIBRICBO

V<BR)CEO

V(BR)6BO

ICES

h«

AhFE

Cc

c

.,

PARAMETER collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector-emitter leakage current

DC current gain

DC current gain ratio of both sections

collector capacitance

collector-flange capacitance

CONDITIONS open emitter;

I0 = 60 mA open base;

lc m 150 mA open collector;

le = 3 mA VM = 0;

VCE = 28 V VCE = 25V;

lc = 4.5 A VCE = 25V;

lc = 4.5 A VCB = 28 V;

IE-I.-0;

f = 1 MHz f • 1 MHz

MIN.

60

28

3

—

30

0.67

-

TYP.

-

-

—

-

-

—

81

5,7

MAX.

—

-

—

30

-

1.5

-

UNIT V

V

V

mA

PF

PF

UHF linear push-pull power

transistor BLV62

too

"FE 80

60

40

20

0

V^CE = 25

Fig.4

Mnc7j9

_>— — - — - —_- — — * — - —_ "•

6 ,c(mA) «

V.

DC current gain as a function of collector current, typical values.

10

'c

(A)

1

0.1

UG1 c

VCE = 25 1

Fig

ba

MRA318

F-.-:

'h /0 t

L.,.1 ~y

^ . .41.. ji

•• — i

"^^^

•--^-^

r/is-c

^*" -—

0.5 1 1,5 2 2.5 VBE(V)

/.

6 Collector current as a function of se-emitter voltage, typical values.

350 , T

= i, = 0 ; f = 1 MHz.

Fig.5 Collector capacitance as a function of collector-base voltage, typical values.