2N930-2

(1)

<z/Ve.ur <$em.i~(-on.auctoi ^Products., JUnc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960

NPN HIGH SPEED SATURATED SWITCHES

2N930

NPN LOW LEVEL LOW NOISE AMPLIFIER

DIFFUSED SILICON PLANAR* EPITAXIAL TRANSISTOR

V C E O - - -

^{4 5 V}

<

^{M I N}

>

hFE . . . 100-300 @ 10 MA NF . . . 3,0 dB (MAX) @ 1.0 kHz

ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperatures

Storage Temperature

Operating Junction Temperature Lead Temperature (10 seconds) Maximum Power Dissipation (Notes 2 & 3)

Total Dissipation at 25°C Case Temperature at 25°C Ambient Temperature Maximum Voltages and Current

VCBO Collector to Base Voltage

VCEO Collector to Emitter Voltage (Note 4) VEBO Emitter to Base Voltage

Ic Collector Current

-65° C to +200° C 175°C 300° C

0.6 W 0.3 W

45V 45V 5.0V

30mA

See T018

E B C 1 2 3

ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL

hFE

"FE

vBE(sat)

vCE(sat)

hib

hob

nrb hfe hfe 'CBO

>CES

'EBO

CEO ab

~~

EO(sus)

BO

CHARACTERISTIC DC Pulse Current Gain (Note 5) DC Current Gain

Base to Emitter Saturation Voltage (Note 5) Collector Saturation Voltage (Note 5) Input Resistance

Output Conductance Voltage Feedback Ratio Small Signal Current Gain High Frequency Current Gain Collector to Base Cutoff Current Collector to Emitter Cutoff Current

Emitter to Base Cutoff Current Collector to Emitter Cutoff Current Output Capacitance

Noise Figure

Collector to Emitter Sustaining Voltage (Notes 4 & 5)

Emitter to Base Breakdown Voltage

MIN. MAX.

600 150

100 300 20

0.6 1 .0 1.0 25 32 1.0 600 150 600

1.0

10 10 10 10 2.0 8.0 3.0

45

5.0

UNITS

V V

n

Mmho x10~6

nA nA MA nA nA pF dB

V

TEST CONDITIONS IC = 10mA, VCE = 5.0 V IC = 500MA, VCE = 5.0V

IG = 10 MA, V

CE

= s.ov

i

c

= 10 MA, VCE =

5

-° v.

T

A = -55°c

1C = 10 mA, IQ = 0.5 mA IC= 10mA, 10 = 0.5 mA

IC = 1 -0 mA, VCB = 5,0 V, f = 1 .0 kHz 1C = 1 .0 mA, VCB = 5.0 V, f - 1 .0 kHz IC = 1 .0 mA, VCB = 5.0 V, f = 1 .0 kHz IC = 1 .0 mA, VCE = 5.0 V, f - 1 .0 kHz IC • 500 MA, VCE = 5.0 V, f = 30 MHz

IE

⁼

°. VCB = 45

^v

V

^CE

= 45v, VEB = O

VCE "

^{45 v}

.

^V

EB = °. TA = i?o°c

lc = 0, VEB = 5.0 V

IB

= O

. VCE = 5.o

v

I

E

= O, v

C

B = s.ov

IC = 10 nA, VCE = 5.0 V, f = 1 .0 kHz, RS= 10 kn, BW = 15.7 kHz

IC = 10mA, IB = 0 (pulsed)

IC = Q, IE =

10nA