FGH40N60SMD

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T

October 2014

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Symbol Description Ratings Unit

V_CES Collector to Emitter Voltage 600 V

V_GES Gate to Emitter Voltage ± 20 V

Transient Gate to Emitter Voltage ± 30 V

I_C Collector Current @ T_C = 25^oC 80 A

Collector Current @ T_C = 100^oC 40 A

I_{CM (1)} Pulsed Collector Current @ T_C = 25^oC 120 A

I_F Diode Forward Current @ T_C = 25^oC 40 A

Diode Forward Current @ T_C = 100^oC 20 A

I_{FM (1)} Pulsed Diode Maximum Forward Current 120 A

P_D Maximum Power Dissipation @ T_C = 25^oC 349 W

Maximum Power Dissipation @ T_C = 100^oC 174 W

T_J Operating Junction Temperature -55 to +175 ^oC

T_stg Storage Temperature Range -55 to +175 ^oC

T_L Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 ^oC

G

E E C

C G

COLLECTOR (FLANGE)

FGH40N60SMD

600 V, 40 A Field Stop IGBT

Features

• Maximum Junction Temperature : T_J = 175^oC

• Positive Temperaure Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V_CE(sat) = 1.9 V(Typ.) @ I_C = 40 A

• High Input Impedance

• Fast Switching: E_OFF = 6.5 uJ/A

• Tighten Parameter Distribution

• RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

General Description

Using novel field stop IGBT technology, Fairchild’s new series of field stop 2^nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applica- tions where low conduction and switching losses are essential.

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Thermal Characteristics

Package Marking and Ordering Information

Electrical Characteristics of the IGBT

Symbol Parameter Typ. Max. Unit

R_θJC(IGBT) Thermal Resistance, Junction to Case - 0.43 ^oC/W

R_θJC(Diode) Thermal Resistance, Junction to Case - 1.5 ^oC/W

R_θJA Thermal Resistance, Junction to Ambient - 40 ^oC/W

Part Number Top Mark Package Packing

Method Reel Size Tape Width Quantity

FGH40N60SMD FGH40N60SMD TO-247 Tube N/A N/A 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV_CES Collector to Emitter Breakdown Voltage V_GE = 0 V, I_C = 250 µA 600 - - V

∆BV_CES ∆T_J

Temperature Coefficient of Breakdown

Voltage V_GE = 0 V, I_C = 250 µA - 0.6 - V/^oC

I_CES Collector Cut-Off Current V_CE = V_CES, V_GE = 0 V - - 250 µA

I_GES G-E Leakage Current V_GE = V_GES, V_CE = 0 V - - ± 400 nA

On Characteristics

V_GE(th) G-E Threshold Voltage I_C = 250 µA, V_CE = V_GE 3.5 4.5 6.0 V

V_CE(sat) Collector to Emitter Saturation Voltage

I_C = 40 A, V_GE = 15 V - 1.9 2.5 V

I_C = 40 A, V_GE = 15 V,

T_C = 175^oC - 2.1 - V

Dynamic Characteristics C_ies Input Capacitance

V_CE = 30 V_, V_GE = 0 V, f = 1 MHz

- 1880 - pF

C_oes Output Capacitance - 180 - pF

C_res Reverse Transfer Capacitance - 50 - pF

Switching Characteristics t_d(on) Turn-On Delay Time

V_CC = 400 V, I_C = 40 A, R_G = 6 Ω, V_GE = 15 V, Inductive Load, T_C = 25^oC

- 12 16 ns

t_r Rise Time - 20 28 ns

t_d(off) Turn-Off Delay Time - 92 120 ns

t_f Fall Time - 13 17 ns

E_on Turn-On Switching Loss - 0.87 1.30 mJ

E_off Turn-Off Switching Loss - 0.26 0.34 mJ

E_ts Total Switching Loss - 1.13 1.64 mJ

t_d(on) Turn-On Delay Time

V_CC = 400 V, I_C = 40 A, R_G = 6 Ω, V_GE = 15 V, Inductive Load, T_C = 175^oC

- 15 - ns

t_r Rise Time - 22 - ns

t_d(off) Turn-Off Delay Time - 116 - ns

t_f Fall Time - 16 - ns

E_on Turn-On Switching Loss - 0.97 - mJ

E_off Turn-Off Switching Loss - 0.60 - mJ

E_ts Total Switching Loss - 1.57 - mJ

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Electrical Characteristics of the IGBT

Electrical Characteristics of the Diode

Symbol Parameter Test Conditions Min. Typ. Max Unit

Q_g Total Gate Charge

V_CE = 400 V, I_C = 40 A, V_GE = 15 V

- 119 180 nC

Q_ge Gate to Emitter Charge - 13 20 nC

Q_gc Gate to Collector Charge - 58 90 nC

Symbol Parameter Test Conditions Min. Typ. Max Unit

V_FM Diode Forward Voltage I_F = 20 A T_C = 25^oC - 2.3 2.8

V

T_C = 175^oC - 1.67 -

E_rec Reverse Recovery Energy

I_F =20 A, dI_F/dt = 200 A/µs

T_C = 175^oC - 48.9 - uJ

t_rr Diode Reverse Recovery Time T_C = 25^oC - 36 -

ns

T_C = 175^oC - 110 -

Q_rr Diode Reverse Recovery Charge T_C = 25^oC - 46.8 -

nC

T_C = 175^oC - 445 -

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Characteristics Temperature at Variant Current Level

Figure 5. Saturation Voltage vs. V

Figure 6. Saturation Voltage vs. V

0 2 4 6

0 20 40 60 80 100 120

V_GE = 8V T_C = 25^oC 20V

15V

12V

10V

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

0 2 4 6

0 20 40 60 80 100 120

V_GE = 8V T_C = 175^oC 20V

15V

12V

10V

Collector Current, IC [A]

Collector-Emitter Voltage, V_CE [V]

0 1 2 3 4

0 20 40 60 80 100 120

Common Emitter VGE = 15V TC = 25^oC TC = 175^oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V]

25 50 75 100 125 150 175

1.0 1.5 2.0 2.5 3.0

80A

40A

I_C = 20A Common Emitter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Case Temperature, TC [^oC]

4 8 12 16 20

0 4 8 12 16 20

IC = 20A

40A 80A

Common Emitter T_C = -40^oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

4 8 12 16 20

0 4 8 12 16 20

80A

I_C = 20A 40A

Common Emitter T_C = 175^oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, V_GE [V]

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Typical Performance Characteristics

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.

Gate Resistance Gate Resistance

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.

Gate Resistance Collector Current

0.1 1 10

0 1000 2000 3000 4000

Common Emitter VGE = 0V, f = 1MHz TC = 25^oC

C_res C_oes C_ies

Capacitance [pF]

Collector-Emitter Voltage, V_CE [V]

30 00 40 80 120

3 6 9 12 15

400V Common Emitter

T_C = 25^oC

300V V_CC = 200V

Gate-Emitter Voltage, VGE [V]

Gate Charge, Qg [nC]

0 10 20 30 40 50

1 10 100

Common Emitter VCC = 400V, VGE = 15V IC = 40A

TC = 25^oC T_C = 175^oC t_d(on)

t_r

Switching Time [ns]

Gate Resistance, RG [ΩΩΩΩ]

0 10 20 30 40 50

1 10 100 1000

Common Emitter VCC = 400V, VGE = 15V IC = 40A

TC = 25^oC TC = 175^oC t_d(off)

t_f

Switching Time [ns]

Gate Resistance, RG [ΩΩΩΩ]

0 10 20 30 40 50

0.1 1 5

Common Emitter V_CC = 400V, V_GE = 15V I_C = 40A

T_C = 25^oC T_C = 175^oC E_on

E_off

Switching Loss [mJ]

Gate Resistance, RG [ΩΩΩΩ]

20 30 40 50 60 70 80

1 10 100 1000

Common Emitter VGE = 15V, RG = 6ΩΩΩΩ T_C = 25^oC T_C = 175^oC

t_r

t_d(on)

Switching Time [ns]

Collector Current, IC [A]

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.

Collector Current Collector Current

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

20 30 40 50 60 70 80

1 10 100 1000

Common Emitter VGE = 15V, RG = 6ΩΩΩΩ T_C = 25^oC T_C = 175^oC t_d(off)

t_f

Switching Time [ns]

Collector Current, IC [A]

20 30 40 50 60 70 80

0.1 1 6

Common Emitter V_GE = 15V, R_G = 6ΩΩΩΩ T_C = 25^oC T_C = 175^oC E_on

E_off

Switching Loss [mJ]

Collector Current, IC [A]

1 10 100 1000

0.01 0.1 1 10 100 300

1ms 10 ms DC

*Notes:

1. TC = 25^oC 2. TJ = 175^oC 3. Single Pulse

10µµµµs

100µµµsµ

Collector Current, Ic [A]

Collector-Emitter Voltage, VCE [V]

1k 10k 100k 1M

0 50 100 150 200 250

T_C = 75^oC

T_C = 100^oC Square Wave

T_J <= 175^oC, D = 0.5, V_CE = 400V V_GE = 15/0V, R_G = 6ΩΩΩΩ

Collector Current, [A]

Switching Frequency, f[Hz]

0 0.5 1.0 1.5 2.0 2.5 3.0

1 10 100

TC = 25^oC TC = 175^oC

Forward Voltage, VF [V]

Forward Current, IF [A]

TC = 25^oC TC = 175^oC

0 10 20 30 40

0 2 4 6 8 10 12

T_C = 25^oC T_C = 175^oC

diF/dt = 100A/µµµµs diF/dt = 200A/µµµµs

diF/dt = 100A/µµµµs diF/dt = 200A/µµµµs

Reverse Recovery Currnet, Irr [A]

Forward Current, IF [A]

H 4 0 N 6 0 S M D — 6 0 0 V , 4 0 A F ie ld S to p IG B T Typical Performance Characteristics

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

Figure 21. Transient Thermal Impedance of IGBT

Figure 22. Time Transient Thermal Impedance of Diode

0 5 10 15 20 25 30 35 40 45

0 100 200 300 400 500 600 700

TC = 25^oC T_C = 175^oC

diF/dt = 200A/µµµsµ diF/dt = 100A/µµµµs

Stored Recovery Charge, Qrr [nC]

Forwad Current, IF [A]

0 5 10 15 20 25 30 35 40 45

0 50 100 150 200

TC = 25^oC T_C = 175^oC

di_F/dt = 200A/µµµsµ

di_F/dt = 100A/µµµµs

Reverse Recovery Time, trr [ns]

Forward Current, IF [A]

10^-5 10^-4 10^-3 10^-2 10^-1 10⁰

0.001 0.01 0.1 1

0.01 0.02 0.1 0.05 0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2 Peak T^j = Pdm x Zthjc + T_C 0.5

t₁ P_DM

t₂

10^-5 10^-4 10^-3 10^-2 10^-1 10⁰

0.01 0.1 1 3

0.05

0.01 0.02 0.1 0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + T_C 0.5

t₁ P_DM

t₂