Si AND SiGe EPITAXY IN PERSPECTIVE
W.B. de Boer
Delft Institute of Microsystems and Nanoelectronics (DIMES)
Delft University of Technology, Feldmannweg 17, 2628CT Delft, The Netherlands
Fifty years of Si and SiGe epitaxy in the semiconductor industry and twenty five since the conception of the present generation of industrial epi reactors justify a review of the evolution and the status of the reactor technology. It may seem that there has been little change in the reactor design but the epi process progressed significantly, thanks to a better understanding of the limiting factors. Low temperature epi facilitates the growth of SiGe and complicated structures with a multitude of layers, all doped differently. The strengths of the current technology are well known, the weaknesses are covered rather than cured.
