MCC-312

(1)

V_DSM V_DRM

V V

1300 1200 MCC 312-12io1 MCD 312-12io1 1500 1400 MCC 312-14io1 MCD 312-14io1 1700 1600 MCC 312-16io1 MCD 312-16io1 1900 1800 MCC 312-18io1 MCD 312-18io1

Symbol Test Conditions Maximum Ratings

I_TRMS, I_FRMS T_VJ = T_VJM 520 A

I_TAVM, I_FAVM T_C = 85°C; 180° sine 320 A

I_TSM, I_FSM T_VJ = 45°C; t = 10 ms (50 Hz) 9200 A

V_R = 0 t = 8.3 ms (60 Hz) 10100 A

T_VJ = T_VJM t = 10 ms (50 Hz) 8000 A

V_R = 0 t = 8.3 ms (60 Hz) 8800 A

òi²dt T_VJ = 45°C t = 10 ms (50 Hz) 423 000 A²s

V_R = 0 t = 8.3 ms (60 Hz) 423 000 A²s

T_VJ = T_VJM t = 10 ms (50 Hz) 320 000 A²s

V_R = 0 t = 8.3 ms (60 Hz) 321 000 A²s

(di/dt)_cr T_VJ = T_VJM repetitive, I_T = 960 A 100 A/µs f =50 Hz, t_P =200 µs

V_D = 2/3 V_DRM

I_G = 1 A, non repetitive, I_T = I_TAVM 500 A/µs di_G/dt = 1 A/µs

(dv/dt)_cr T_VJ = T_VJM; V_DR = 2/3 V_DRM 1000 V/µs R_GK = ∞; method 1 (linear voltage rise)

P_GM T_VJ = T_VJM t_P = 30 µs 120 W

I_T = I_TAVM t_P = 500 µs 60 W

P_GAV 20 W

V_RGM 10 V

T_VJ -40...+140 °C

T_VJM 140 °C

T_stg -40...+125 °C

V_ISOL 50/60 Hz, RMS t = 1 min 3000 V~

I_ISOL≤ 1 mA t = 1 s 3600 V~

M_d Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.

Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.

Weight Typical including screws 750 g

Features

● International standard package

● Direct copper bonded Al₂O₃-ceramic with copper base plate

● Planar passivated chips

● Isolation voltage 3600 V~

● UL registered E 72873

● Keyed gate/cathode twin pins

Applications

● Motor control, softstarter

● Power converter

● Heat and temperature control for industrial furnaces and chemical processes

● Lighting control

● Solid state switches

Advantages

● Simple mounting

● Improved temperature and power cycling

● Reduced protection circuits

I

_TRMS

= 2x 520 A I

_TAVM

= 2x 320 A V

_RRM

= 1200-1800 V

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.

IXYS reserves the right to change limits, test conditions and dimensions

MCC 312 MCD 312

Thyristor Modules

Thyristor/Diode Modules

1 2

3 765

4

MCD MCC

3 6 7 1 5 4 2

3 1 5 4 2

(2)

MCC 312 MCD 312

Symbol Test Conditions Characteristic Values

I_RRM, I_DRM T_VJ = T_VJM; V_R = V_RRM; V_D = V_DRM 40 mA V_T, V_F I_T, I_F = 600 A; T_VJ = 25°C 1.32 V V_T0 For power-loss calculations only (T_VJ = 140°C) 0.8 V

r_T 0.68 mΩ

V_GT V_D = 6 V; T_VJ = 25°C 2 V

T_VJ = -40°C 3 V

I_GT V_D = 6 V; T_VJ = 25°C 150 mA

T_VJ = -40°C 220 mA

V_GD T_VJ = T_VJM; V_D = 2/3 V_DRM 0.25 V

I_GD T_VJ = T_VJM; V_D = 2/3 V_DRM 10 mA

I_L T_VJ = 25°C; t_P = 30 µs; V_D = 6 V 200 mA I_G = 0.45 A; di_G/dt = 0.45 A/µs

I_H T_VJ = 25°C; V_D = 6 V; R_GK = ∞ 150 mA

t_gd T_VJ = 25°C; V_D = 1/2 V_DRM 2 µs

I_G = 1 A; di_G/dt = 1 A/µs

t_q T_VJ = T_VJM; I_T = 300 A, t_P = 200 µs; -di/dt = 10 A/µs typ. 200 µs V_R = 100 V; dv/dt = 50 V/µs; V_D = 2/3 V_DRM

Q_S T_VJ = 125°C; I_T, I_F = 300 A; -di/dt = 50 A/µs 760 µC

I_RM 275 A

R_thJC per thyristor (diode); DC current 0.12 K/W

per module other values 0.06 K/W

R_thJK per thyristor (diode); DC current see Fig. 8/9 0.16 K/W

per module 0.08 K/W

d_S Creeping distance on surface 12.7 mm

d_A Creepage distance in air 9.6 mm

a Maximum allowable acceleration 50 m/s²

Optional accessories for modules

Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,

Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")

MCC MCD

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time

0.01 0.1 1 10

1 10 100

10^-3 10^-2 10^-1 10⁰ 10¹ 10² 0.1

1 10

I_G V_G

A

A I_G 1: I_GT, T_VJ= 140°C

2: I_GT, T_VJ= 25°C 3: I_GT, T_VJ= -40°C

µs t_gd

V

4: P_GM= 20 W 5: P_GM= 60 W 6: P_GM= 120 W I_GD, T_VJ= 140°C

4 2

1 56

Limit typ.

T_VJ= 25°C 3

M8x20 M8x20

(3)

MCC 312 MCD 312

0 100 200 300 400 500

0 100 200 300 400 500 600

0 25 50 75 100 125 150

1 10

10⁴ 10⁵ 10⁶

0 25 50 75 100 125 150

0.001 0.01 0.1 1

0 2000 4000 6000 8000 10000

0 200 400 600 800

0 500 1000 1500 2000 2500 3000

I²t

I_TAVM/ I_FAVM

I_dAVM A P_tot

W

T_A

T_C s

t ms t

A²s

0 25 50 75 100 125 150

0 100 200 300 400 500 600 I_TSM

A

°C 80 % V_RRM

T_VJ = 45°C 50 Hz

T_VJ = 140°C

T_VJ = 140°C T_VJ = 45°C

I_TAVM IFAVM

W P_tot

A °C

0.6 0.8 0.1 0.2 0.3 0.4 R_thKA K/W 0.06

0.2 0.15 0.1 0.07 0.04 0.02

0.3

°C 3xMCC312 or

3xMCD312 Circuit B6

T_A R_thKA K/W 180° sin

120°

60°

30°

DC

180° sin 120°

60°

30°

DC V_R = 0V

Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode)

Fig. 3 Surge overload current

I_TSM, I_FSM: Crest value, t: duration

Fig. 4 I²t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct output current and ambient temperature

(4)

MCC 312 MCD 312

R_thJC for various conduction angles d:

d R_thJC (K/W)

DC 0.120

180° 0.128 120° 0.135 60° 0.153 30° 0.185

Constants for Z_thJC calculation:

i R_thi (K/W) t_i (s)

1 0.0058 0.00054

2 0.031 0.098

3 0.072 0.54

4 0.0112 12

Fig. 9 Transient thermal impedance junction toheatsink(perthyristor or diode)

R_thJK for various conduction angles d:

d R_thJK (K/W)

DC 0.160

180° 0.168 120° 0.175 60° 0.193 30° 0.225

Constants for Z_thJK calculation:

i R_thi (K/W) t_i (s)

1 0.0058 0.00054

2 0.031 0.098

3 0.072 0.54

4 0.0112 12

5 0.04 12

t

Z_thJK

s t

10^-3 10^-2 10^-1 10⁰ 10¹ 10²

0.00 0.05 0.10 0.15 0.20 0.25 K/W Z_thJC

I_RMS P_tot

0 25 50 75 100 125 150

0 200 400 600

0 500 1000 1500 2000 2500 3000

0 A 3xMCC312 or 3xMCD312 Circuit W3

0.2 0.15 0.1 0.07 0.04 0.02 R_thKA K/W

0.3

10^-3 10^-2 10^-1 10⁰ 10¹ 10²

0.00 0.05 0.10 0.15 0.20

DC 180°

120°

60°

30°

DC 180°

120°

60°

30°

°C T_A W

K/W

s

Fig. 8 Transient thermal impedance junction to case (per thyristor or diode)

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS output current and ambient temperature