BCP51-2

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PNP Silicon AF Transistors

• For AF driver and output stages

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BCP54 ... BCP56 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16

*

1=B 1=B 1=B 1=B 1=B

2=C 2=C 2=C 2=C 2=C

3=E 3=E 3=E 3=E 3=E

4=C 4=C 4=C 4=C 4=C

- - - - -

SOT223 SOT223 SOT223 SOT223 SOT223

* Marking is the same as type-name

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Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage BCP51

BCP52 BCP53

V_CEO

45 60 80

V

Collector-base voltage BCP51

BCP52 BCP53

V_CBO

45 60 100

Emitter-base voltage V_EBO 5

Collector current I_C 1 A

Peak collector current, t_p ≤ 10 ms I_CM 1.5

Base current I_B 100 mA

Peak base current I_BM 200

Total power dissipation- T_S ≤ 120°C

P_tot 2 W

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point¹⁾ R_thJS ≤ 15 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 10 mA, I_B = 0 , BCP51

I_C = 10 mA, I_B = 0 , BCP52 I_C = 10 mA, I_B = 0 , BCP53

V_(BR)CEO 45 60 80

- - -

V

Collector-base breakdown voltage I_C = 100 µA, I_E = 0 , BCP51 I_C = 100 µA, I_E = 0 , BCP52 I_C = 100 µA, I_E = 0 , BCP53

V_(BR)CBO 45 60 100

- - -

- - - Emitter-base breakdown voltage

I_E = 10 µA, I_C = 0

V_(BR)EBO 5 - -

Collector-base cutoff current V_CB = 30 V, I_E = 0

V_CB = 30 V, I_E = 0 , T_A = 150 °C

I_CBO

- -

0.1 20

µA

DC current gain¹⁾ I_C = 5 mA, V_CE = 2 V

I_C = 150 mA, V_CE = 2 V, BCP51 I_C = 150 mA, V_CE = 2 V, BCP53-10

I_C = 150 mA, V_CE = 2 V, BCP51-16...BCP53-16 I_C = 500 mA, V_CE = 2 V

h_FE

25 40 63 100

25

- - 100 160 -

- 250 160 250 -

-

Collector-emitter saturation voltage¹⁾ I_C = 500 mA, I_B = 50 mA

V_CEsat - - 0.5 V

Base-emitter voltage¹⁾ I_C = 500 mA, V_CE = 2 V

V_BE(ON) - - 1

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 10 V, f = 100 MHz

f_T - 125 - MHz

1Pulse test: t < 300µs; D < 2%

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DC current gain h_FE = ƒ(I_C) V_CE = 2 V

10

EHP00261 BCP 51...53

0 4

10 mA 100

103

5 5

10¹ 10² 10¹

C

hFE

Ι 103

102

C 100 5

25 C -50 C

Collector-emitter saturation voltage I_C = ƒ(V_CEsat), h_FE = 10

10 0

EHP00264 BCP 51...53

CEsat

V

0.4 V 0.8

0

10¹ 10² 104

5 5 ΙC mA

5 103

0.2 0.6

C 100

25 C C -50

Base-emitter saturation voltage I_C = ƒ(V_BEsat), h_FE = 10

10 0

EHP00263 BCP 51...53

0

104

ΙC mA

0.2 101

102

103

0.4 0.6 0.8 V 1.2 C

100 25 C

-50C

Collector cutoff current I_CBO = ƒ(T_A) V_CBO = 30 V

10 0

EHP00262 BCP 51...53

150

-1

104

ΙCBO

nA

50 100

100

101

103

C 10²

max

typ

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Transition frequency f_T = ƒ(I_C) V_CE = 10 V

10

EHP00260 BCP 51...53

0 3

10 mA 101

103

5 5

10¹ 10²

10²

C

fT

MHz

Ι

Total power dissipation P_tot = ƒ(T_S)

0 15 30 45 60 75 90 105 120 °C 150

T_S

0 0.4 0.8 1.2 1.6 W

2.4

Ptot

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p)

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 0

10 1

10 2

10 3

-

Ptotmax/PtotDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Pulse Load R_thJS = ƒ(t_p)

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰ TP 10 -1

10 0

10 1

10 2

RthJS

D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0

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P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

P a c k i n g

Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel

2005, 24 CW Date code (YYWW)

BCP52-16 Type code

Pin 1

1 2 3

3

4

±0.1

±0.04

0.5 MIN.

0.28 0.1 MAX.

15˚ MAX.

6.5±0.2

A

4.6 0.7±0.1 2.3

0.25M A

1.6±0.1

7±0.3

B 0.25M

±0.23.5 B

3.5

1.44.81.4

1.1 1.2

8 0.3 MAX.

7.55 12

Manufacturer

0...10˚

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Edition 2009-11-16 Published by

Infineon Technologies AG 81726 Munich, Germany

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