BCV47-2

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1 3 2

NPN Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV26, BCV46 (PNP)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCV27 BCV47

FFs FGs

1=B 1=B

2=E 2=E

3=C 3=C

SOT23 SOT23 Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage BCV27

BCV47

V_CEO

30 60

V

Collector-base voltage BCV27

BCV47

V_CBO

40 80

Emitter-base voltage V_EBO 10

Collector current I_C 500 mA

Peak collector current, t_p ≤ 10 ms I_CM 800

Base current I_B 100

Peak base current I_BM 200

Total power dissipation- T_S ≤ 74 °C

P_tot 360 mW

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

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2011-10-05 2

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point¹⁾ R_thJS ≤ 210 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 10 mA, I_B = 0 , BCV27

I_C = 10 mA, I_B = 0 , BCV47

V_(BR)CEO 30 60

- -

-

Collector-base breakdown voltage I_C = 100 µA, I_E = 0 , BCV27 I_C = 100 µA, I_E = 0 , BCV47

V_(BR)CBO 40 80

- -

- - Emitter-base breakdown voltage

I_E = 10 µA, I_C = 0

V_(BR)EBO 10 - - V

Collector-base cutoff current V_CB = 30 V, I_E = 0 , BCV27 V_CB = 60 V, I_E = 0 , BCV47

V_CB = 30 V, I_E = 0 , T_A = 150 °C, BCV27 V_CB = 60 V, I_E = 0 , T_A = 150 °C, BCV47

I_CBO

- - - -

0.1 0.1 10 10

µA

Emitter-base cutoff current V_EB = 4 V, I_C = 0

I_EBO - - 100 nA

DC current gain¹⁾

I_C = 100 µA, V_CE = 1 V, BCV27 I_C = 100 µA, V_CE = 1 V, BCV47 I_C = 10 mA, V_CE = 5 V, BCV27 I_C = 10 mA, V_CE = 5 V, BCV47 I_C = 100 mA, V_CE = 5 V, BCV27 I_C = 100 mA, V_CE = 5 V, BCV47 I_C = 0.5 A, V_CE = 5 V, BCV27 I_C = 0.5 A, V_CE = 5 V, BCV47

h_FE

4000 2000 10000

4000 20000 10000 4000 2000

- - - - - - - -

-

Collector-emitter saturation voltage¹⁾ I_C = 100 mA, I_B = 0.1 mA

V_CEsat - - 1 V

Base emitter saturation voltage¹⁾ I_C = 100 mA, I_B = 0.1 mA

V_BEsat - - 1.5

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1Pulse test: t < 300µs; D < 2%

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 5 V, f = 100 MHz

f_T - 170 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 3 - pF

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2011-10-05 4

DC current gain h_FE = ƒ(I_C) V_CE = 5 V

10

EHP00307 BCV 27/47

-1 3

10 mA 103

106

5 5

10⁰ 10¹ 10⁴

C

hFE

Ι 102

105

˚C 125 5

25 ˚C

-55 ˚C

Collector-emitter saturation voltage I_C = ƒ(V_CEsat), h_FE = 10

10 0

EHP00305 BCV 27/47

CEsat

V

1.5

0

103

ΙC mA

0.5 1.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Base-emitter saturation voltage I_C = ƒ(V_BEsat), h_FE = 10

10 0

EHP00304 BCV 27/47

BEsat

V

3.0

0

103

ΙC

mA

1.0 2.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Collector cutoff current I_CBO = ƒ(T_A) V_CB = V_CEmax

10 0

EHP00306 BCV 27/47

TA

150

0

104

ΙCBO

nA

50 100

101

102

103

˚C max

typ

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Transition frequency f_T = ƒ(I_C) V_CE = 5 V

10

EHP00303 BCV 27/47

0 3

10 mA 101

103

5

10¹ 10²

10²

C

fT

MHz

Ι

Collector-base capacitance C_cb=ƒ(V_CB) Emitter-base capacitance C_eb=ƒ(V_EB)

0 4 8 12 16 V 22

V_CB/V_EB

1 3 5 7 9 11 13 15 pF

19

CCB/CEB

CCB CEB

Total power dissipation P_tot = ƒ(T_S)

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰ T_S

0 50 100 150 200 250 300

mW

400

Ptot

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p)

10

EHP00301 BCV 27/47

-6

100

5

D = 5

10¹ 5

10² 103

10^-5 10^-4 10^-3 10^-2 s 10⁰ 0

0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp

=

D T

t_p

T

tot max

Ptot_DC

P

tp

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2011-10-05 6

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

S t a n d a r d P a c k i n g

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

EH s

BCW66 Type code Pin 1

0.8

0.90.91.3

0.8 1.2 0.25^M B C

1.9

-0.05

0.4+0.1

2.9±0.1

0.95 C B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3±0.1

10˚ MAX.

M

2.4±0.15

1±0.1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

1 2

3

3.15 4

2.652.13

0.9

8

0.2

Pin 1 1.15

Manufacturer 2005, June Date code (YM)

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Edition 2009-11-16 Published by

Infineon Technologies AG 81726 Munich, Germany

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