BCV28-2

(1)

1 2 3 2

PNP Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV29, BCV49 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCV28 BCV48

ED EE

1=B 1=B

2=C 2=C

3=E 3=E

SOT89 SOT89 Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage BCV28

BCV48

V_CEO

30 60

V

Collector-base voltage BCV28

BCV48

V_CBO

40 80

Emitter-base voltage V_EBO 10

Collector current I_C 500 mA

Peak collector current, t_p ≤ 10 ms I_CM 800

Base current I_B 100

Peak base current I_BM 200

Total power dissipation- T_S ≤ 130 °C

P_tot 1 W

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

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2011-10-05 2

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point¹⁾ R_thJS ≤ 20 K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 10 mA, I_B = 0 , BCV28

I_C = 10 mA, I_B = 0 , BCV48

V_(BR)CEO 30 60

- -

V

Collector-base breakdown voltage I_C = 100 µA, I_E = 0 , BCV28 I_C = 100 µA, I_E = 0 , BCV48

V_(BR)CBO 40 80

- -

- - Emitter-base breakdown voltage

I_E = 10 µA, I_C = 0

V_(BR)EBO 10 - -

Collector-base cutoff current V_CB = 30 V, I_E = 0 , BCV28 V_CB = 60 V, I_E = 0 , BCV48

V_CB = 30 V, I_E = 0 , T_A≤ 150 °C, BCV28 V_CB = 60 V, I_E = 0 , T_A≤ 150 °C, BCV48

I_CBO

- - - -

0.1 0.1 10 10

µA

Emitter-base cutoff current V_EB = 4 V, I_C = 0

I_EBO - - 100 nA

DC current gain¹⁾

I_C = 10 µA, V_CE = 1 V, BCV28 I_C = 10 µA, V_CE = 1 V, BCV48 I_C = 10 mA, V_CE = 5 V, BCV28 I_C = 10 mA, V_CE = 5 V, BCV48 I_C = 100 mA, V_CE = 5 V, BCV28 I_C = 100 mA, V_CE = 5 V, BCV48 I_C = 0.5 A, V_CE = 5 V, BCV28 I_C = 0.5 A, V_CE = 5 V, BCV48

h_FE

4000 2000 10000

4000 20000 10000 4000 2000

- - - - - - - -

-

Collector-emitter saturation voltage¹⁾ I_C = 100 mA, I_B = 0.1 mA

V_CEsat - - 1 V

Base emitter saturation voltage¹⁾ I_C = 100 mA, I_B = 0.1 mA

V_BEsat - - 1.5

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1Pulse test: t < 300µs; D < 2%

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 5 V, f = 100 MHz

f_T - 200 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 4.5 - pF

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2011-10-05 4

DC current gain h_FE = ƒ(I_C) V_CE = 5 V

10

EHP00316 BCV 28/48

-1 3

10 mA 103

106

5 5

10⁰ 10¹ 10⁴

C

hFE

Ι 102

105

˚C 125 5

25 ˚C

-55 ˚C

Collector-emitter saturation voltage I_C = ƒ(V_CEsat), h_FE = 1000

10 0

EHP00313 BCV 28/48

CEsat

V

1.5

0

103

ΙC

mA

0.5 1.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Base-emitter saturation voltage I_C = ƒ(V_BEsat), h_FE = 1000

10 0

EHP00314 BCV 28/48

BEsat

V

3.0

0

103

ΙC mA

1.0 2.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Collector cutoff current I_CBO = ƒ(T_A) V_CB = V_CEmax

10 0

EHP00309 BCV 28/48

TA

150

0

104

ΙCBO

nA

50 100

101

102

103

˚C max

typ

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Transition frequency f_T = ƒ(I_C) V_CE = 5 V

10

EHP00312 BCV 28/48

0 3

10 mA 101

103

5

10¹ 10²

10²

C

fT

MHz

Ι

Collector-base capacitance C_cb=ƒ(V_CB) Emitter-base capacitance C_eb=ƒ(V_EB)

0 4 8 12 16 V 22

V_CB(V_EB

0 2 4 6 8 10 12 pF

16

CCB(CEB)

CCB CEB

Total power dissipation P_tot = ƒ(T_S)

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰ T_S

0 200 400 600 800

mW

1200

Ptot

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p)

10

EHP00310 BCV 28/48

-6 -5

10 s 10⁰

100

102

5 5

10^-4 10^-3 10^-2 10¹

5

0

0.5 0.20.1 0.05 0.02 0.010.005

= D

tot max

Ptot_DC

P

tp

=

D T

t_p

T

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2011-10-05 6

Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

S t a n d a r d P a c k i n g

0.8 0.8

2.0

1.01.22.5

0.7 0.45^+0.2

1) Ejector pin markings possible 1.5

3 0.2

-0.1

B 0.25

1)

±0.05

45˚

0.15 2.5±0.1 4±0.25

M B

B

0.15

0.35±0.1

±0.21MAX.10˚

1.5^±0.1

1.6±0.2

-0.15+0.12.75 4.5±0.1

±0.11

x3

0.2 MAX.¹⁾

1 2 3

8 0.2

4.3 1.6

4.6 12

Pin 1

2005, June Date code (YM) BAW78D Type code

Pin 1

Manufacturer

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Edition 2009-11-16 Published by

Infineon Technologies AG 81726 Munich, Germany

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