BC846PN

2011-10-05 1

NPN/PNP Silicon AF Transistor Arrays

• For AF input stage and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP transistor in one package

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BC846PN BC846UPN BC847PN

EHA07177

6 5 4

3 2 1

C1 B2 E2

C2 B1 E1

TR1 TR2

Type Marking Pin Configuration Package

BC846PN BC846UPN BC847PN

1Os 1Os 1Ps

1=E1 1=E1 1=E1

2=B1 2=B1 2=B1

3=C2 3=C2 3=C2

4=E2 4=E2 4=E2

5=B2 5=B2 5=B2

6=C1 6=C1 6=C1

SOT363 SC74 SOT363

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage BC846PN/UPN

BC847PN

V_CEO

65 45

V

Collector-emitter voltage BC846PN/UPN

BC847PN

V_CES

80 50 Collector-base voltage

BC846PN/UPN BC847PN

V_CBO

80 50

Emitter-base voltage V_EBO 6

Collector current I_C 100 mA

Peak collector current, t_p ≤ 10 ms I_CM 200 Total power dissipation-

T_S ≤ 115°C, BC846PN, BC847PN T_S ≤ 118°C, BC846UPN

P_tot

250 250

mW

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point¹⁾ BC846PN, BC847PN BC846UPN

R_thJS

≤ 140

≤ 130

K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-10-05 3

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 10 mA, I_B = 0 , BC846PN/UPN I_C = 10 mA, I_B = 0 , BC847PN

V_(BR)CEO 65 45

- -

- -

V

Collector-base breakdown voltage I_C = 10 µA, I_E = 0 , BC846PN/UPN I_C = 10 µA, I_E = 0 , BC847PN

V_(BR)CBO 80 50

- -

- - Collector-emitter breakdown voltage

I_C = 10 µA, V_BE = 0 , BC846PN/UPN I_C = 10 µA, V_BE = 0 , BC847PN

V_(BR)CES 80 50

- -

- - Emitter-base breakdown voltage

I_E = 1 µA, I_C = 0

V_(BR)EBO 6 - -

Collector-base cutoff current V_CB = 50 V, I_E = 0

V_CB = 30 V, I_E = 0 , T_A = 150 °C

I_CBO

- -

- -

0.015 5

µA

DC current gain- I_C = 10 µA, V_CE = 5 V I_C = 2 mA, V_CE = 5 V

h_FE

- 200

250 290

- 450

-

Collector-emitter saturation voltage¹⁾ I_C = 10 mA, I_B = 0.5 mA

I_C = 100 mA, I_B = 5 mA

V_CEsat

- -

90 200

300 650

mV

Base emitter saturation voltage-¹⁾ I_C = 10 mA, I_B = 0.5 mA

I_C = 100 mA, I_B = 5 mA

V_BEsat

- -

700 900

- - Base-emitter voltage-¹⁾

I_C = 2 mA, V_CE = 5 V I_C = 10 mA, V_CE = 5 V

V_BE(ON)

580 -

660 -

750 820

1Pulse test: t 300µs, D = 2%

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics Transition frequency

I_C = 10 mA, V_CE = 5 V, f = 100 MHz

f_T - 250 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 1.5 - pF

Emitter-base capacitance V_EB = 0.5 V, f = 1 MHz

C_eb - 8 -

Short-circuit input impedance I_C = 2 mA, V_CE = 5 V, f = 1 kHz

h_11e - 4.5 - kΩ

Open-circuit reverse voltage transf. ratio I_C = 2 mA, V_CE = 5 V, f = 1 kHz

h_12e - 2 - 10^-4

Short-circuit forward current transf. ratio I_C = 2 mA, V_CE = 5 V, f = 1 kHz

h_21e - 330 - -

Open-circuit output admittance I_C = 2 mA, V_CE = 5 V, f = 1 kHz

h_22e - 30 - µS

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DC current gain h_FE = ƒ(I_C) V_CE = 5 V

10 10 10 10

EHP00365

h

-2 -1 1 mA 2

FE

103

10²

100

5 5

10¹

100

5

5 5 5

100

25 -50

Ι_C C

C C

Collector-emitter saturation voltage I_C = ƒ(V_CEsat), h_FE = 20

10 0

EHP00367

V_CEsat 10

mA 10 ΙC

10

2

1

0

-1

5

5

V

0.3 0.5

100 25 -50

0.1 0.2 0.4

C C C

Base-emitter saturation voltage I_C = ƒ(V_BEsat), h_FE = 20

10 0

EHP00364

BEsat

V

0.6 V 1.2

-1

10⁰ 10¹ 102

5 5 ΙC mA

0.2 0.4 0.8

C 25

C 100 C -50 C

Collector cutoff current I_CBO = ƒ(T_A) V_CBO = 30 V

10 0 50 100 150

EHP00381

T_A 5

10 10 nA 10 ΙCB0

5 5

5 10

10

4

3

2

1

0

-1

max

typ

C

Transition frequency f_T = ƒ(I_C) V_CE = 5 V, f = 100 MHz

10 10 10 10

EHP00363

f

mA MHz

-1 5 0 1 2

T

103

10²

101

5 5

5

ΙC

Collector-base capacitance C_cb=ƒ(V_CB) Emitter-base capacitance C_eb=ƒ(V_EB)

0 4 8 12 16 V 22

V_CB(V_EB

0 1 2 3 4 5 6 7 8 9 10 pF

12

CCB(CEB)

CCB CEB

Total power dissipation P_tot = ƒ(T_S) BC846PN, BC847PN

75 100 125 150 175 200 225 250 mW

300

Ptot

Total power dissipation P_tot = ƒ(T_S) BC846UPN

75 100 125 150 175 200 225 250 mW

300

Ptot

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Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p) BC846PN, BC847PN

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 0

10 1

10 2

10 3

-

Ptotmax/PtotDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Pulse Load R_thJS = ƒ(t_p) BC846PN, BC847PN

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 -1

10 0

10 1

10 2

10 3

K/W

RthJS

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Permissible Puls Load R_thJS = ƒ (t_p) BC846UPN

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 -1

10 0

10 1

10 2

10 3

K/W

RthJS

D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p) BC846UPN

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 0

10 1

10 2

10 3

Ptotmax/ PtotDC D=0

0.005 0.01 0.02 0.05 0.1 0.2 0.5

P a c k a g e O u t l i n e

F o o t P r i n t

S t a n d a r d P a c k i n g

0.5

0.95

1.9 2.9

5 4

6

3 2 1

1.1 MAX.

(0.35) (2.25) 2.9±0.2

B

0.2

+0.1 -0.05

Pin 1 0.35 marking

M B 6x 0.95

1.9

0.15_-0.06^+0.1

1.6

10˚ MAX. A

±0.1

2.5 0.25 10˚ MAX.

±0.1 ±0.1

A 0.2M

0.1 MAX.

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

For symmetric types no defined Pin 1 orientation in reel.

Manufacturer 2005, June

Date code (Year/Month)

BCW66H Type code Pin 1 marking

Laser marking

M a r k i n g L a y o u t ( E x a m p l e )

Small variations in positioning of

Date code, Type code and Manufacture are possible.

2011-10-05 9

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

S t a n d a r d P a c k i n g

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

For symmetric types no defined Pin 1 orientation in reel.

Small variations in positioning of

Date code, Type code and Manufacture are possible.

Manufacturer 2005, June

Date code (Year/Month)

BCR108S Type code Pin 1 marking

Laser marking 0.3

0.70.9

0.65 0.65

1.6

4 0.2

2.15 1.1

8

2.3

Pin 1 marking

0.2+0.1

1 6

2 3

5 4

2±0.2

+0.1 -0.05

0.15

±0.11.25 0.1 MAX.

0.9^±0.1

A

-0.05 6x

0.1^M

0.65 0.65

2.1±0.1

0.1

0.1 MIN.

0.2M A Pin 1

marking

Edition 2009-11-16 Published by

Infineon Technologies AG 81726 Munich, Germany

 2009 Infineon Technologies AG All Rights Reserved.

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