5 4 6
3 2 1
NPN Silicon AF Transistor Array
• For AF stages and driver applications
• High current gain
• Low collector-saturation voltage
• Two (galvanic) internal isolated transistors with good matching in one package
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
EHA07178
6 5 4
3 2 1
C1 B2 E2
C2 B1 E1 TR1
TR2
Type Marking Pin Configuration Package
BC817U 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Collector current IC 500 mA
Peak collector current, tp ≤ 10 ms ICM 1000
Base current IB 100
Peak base current IBM 200
Total power dissipation- TS ≤ 115 °C
Ptot 330 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 105 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 10 mA, IB = 0
V(BR)CEO 45 - - V
Collector-base breakdown voltage IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Emitter-base breakdown voltage IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
- -
- -
0.1 50
µA
Emitter-base cutoff current VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain2)
IC = 100 mA, VCE = 1 V IC = 300 mA, VCE = 1 V
hFE
160 100
250 -
400 -
-
Collector-emitter saturation voltage2) IC = 500 mA, IB = 50 mA
VCEsat - - 0.7 V
Base emitter saturation voltage2) IC = 500 mA, IB = 50 mA
VBEsat - - 1.2
AC Characteristics Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT - 170 - MHz
Collector-base capacitance f = 1 MHz, VBE = 10 V
Ccb - 6 - pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz
Ceb - 60 -
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2%
DC current gain hFE = ƒ(IC) VCE = 1 V
10 -5 10 -4 10 -3 10 -2 10 -1 A 10 0
IC
10 1
10 2
10 3
hFE
105 °C 85 °C 65 °C 25 °C -40 °C
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
10 0
EHP00223 BC 817/818
CEsat
V
0.4 V 0.8
-1
100 101 103
5 5 ΙC
mA
5 102
0.2 0.6
˚C -5025 ˚C 150 ˚C
Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10
10 0
EHP00222 BC 817/818
BEsat
V
2.0 V 4.0
-1
100 101 103
5 5 ΙC
mA
5 102
1.0 3.0
˚C -50
25 ˚C
˚C 150
Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V
10 0
EHP00221 BC 817/818
TA
150
0
105
ΙCBO
nA
50 100
101
102
104
˚C typ
max 103
Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz
10
EHP00218 BC 817/818
0 3
10 mA 101
103
5 5
101 102
102
C
fT MHz
Ι
Collector-base capacitance Ccb=ƒ(VCB) Emitter-base capacitance Ceb=ƒ(VEB)
0 2 4 6 8 10 12 14 16 V 20
VCB/VEB 0
5 10 15 20 25 30 35 40 45 50 55 pF
65
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 160
0 30 60 90 120 150 180 210 240 270 300 360
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 -1
10 0
10 1
10 2
10 3
K/W
RthJS
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 0
10 1
10 2
10 3
Ptotmax/PtotDC D=0
0.005 0.01 0.02 0.05 0.1 0.2 0.5
P a c k a g e O u t l i n e
F o o t P r i n t
S t a n d a r d P a c k i n g
0.5
0.95
1.9 2.9
5 4
6
3 2 1
1.1 MAX.
(0.35) (2.25) 2.9±0.2
B
0.2
+0.1 -0.05
Pin 1 0.35 marking
M B 6x 0.95
1.9
0.15-0.06+0.1
1.6
10˚ MAX. A
±0.1
2.5 0.25 10˚ MAX.
±0.1 ±0.1
A 0.2M
0.1 MAX.
2.7
4
Pin 1 3.15
8
0.2
1.15 Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Manufacturer 2005, June
Date code (Year/Month)
BCW66H Type code Pin 1 marking
Laser marking
M a r k i n g L a y o u t ( E x a m p l e )
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Edition 2009-11-16 Published by
Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
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