FJP5304D

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© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP5304D Rev. A 1

July 2008

FJP5304D

NPN Silicon Transistor

High Voltage High Speed Power Switch Application

• Wide Safe Operating Area

• Built-in Free Wheeling diodeSuitable for Electronic Ballast Application

• Suitable for Electronic Ballast Application

• Small Variance in Storage Time

Absolute Maximum Ratings

* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%

Electrical Characteristics

Symbol Parameter Value Units

V_CBO Collector-Base Voltage 700 V

V_CEO Collector-Emitter Voltage 400 V

V_EBO Emitter-Base Voltage 12 V

I_C Collector Current (DC) 4 A

I_CP * Collector Current (Pulse) 8 A

I_B Base Current (DC) 2 A

I_BP * Base Current (Pulse) 4 A

P_C Collector Dissipation (T_C=25°C) 70 W

T_STG Storage Temperature - 65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV_CBO Collector-Base Breakdown Voltage I_C = 1mA, I_E = 0 700 V

BV_CEO Collector-Emitter Breakdown Voltage I_C = 5mA, I_B = 0 400 V

BV_EBO Emitter-Base Breakdown Voltage I_E = 1mA, I_C = 0 12 V

I_CES Collector Cut-off Current V_CE = 700V, V_EB = 0 100 mA

I_CEO Collector Cut-off Current V_CE = 400V, IB = 0 250 mA

I_EBO Emitter Cut-off Current V_EB = 12V, I_C = 0 100 mA

1.Base 2.Collector 3.Emitter

1 TO-220

C

B

E Equivalent Circuit

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* Pulse test: PW≤300μs, Duty cycle≤2%

Thermal Characteristics

h_FE DC Current Gain V_CE = 5V, I_C = 10mA

V_CE = 5V, I_C = 2A

10

8 40

V_CE(sat) Collector-Emitter Saturation Voltage I_C = 0.5A, I_B = 0.1A I_C = 1A, I_B = 0.2A I_C = 2.5A, I_B = 0.5A

0.7 1.0 1.5

V

V_BE(sat) Base-Emitter Saturation Voltage I_C = 0.5A, I_B = 0.1A I_C = 1A, I_B = 0.2A I_C = 2.5A, I_B = 0.5A

1.1 1.2 1.3

V

V_f Internal Diode Forward Voltage Drop I_F = 2A 2.5 V

Inductive Load Switching (V_CC = 200V)

t_stg Storage Time I_C = 2A, I_B1 = 0.4A

V_BE(off) = -5V, L = 200μH

0.6 μs

tf Fall Time 0.1

Resistive Load Switching (V_CC = 250V)

t_stg Storage Time I_C = 2A, I_B1 = I_B2 = 0.4A

T_P = 30μs

2.9 μs

tf Fall Time 0.2

Symbol Parameter Max. Units

R_θJC Thermal Resistance, Junction to Case 1.78 °C/W

R_θJA Thermal Resistance, Junction to Ambient 62.5 °C/W

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© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP5304D Rev. A 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time

0 1 2 3 4 5 6 7 8 9 10

0 1 2 3 4 5

IB = 450mA IB = 500mA

IB = 250mA I_B = 150mA IB = 300mA IB = 350mA IB = 400mA

IB = 200mA

IB = 100mA IB = 50mA

IB = 0 IC[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1 10 100

Ta=125^oC

25^oC -25^oC

Vce=5V

hFE,DC CURRENT GAIN

I_C[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01 0.1 1 10

Ta=125^OC

25^OC

-25^OC I_c=5I_B

VCE(sat)[V],SATURATION VOLTAGE

I_C[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.1 1 10

25^OC -25^OC

Ta=125^OC

I_c=5I_B

VBE[V],SATURATION VOLTAGE

I_C[A], COLLECTOR CURRENT

0.1 1 10

0.01 0.1 1 10

V_CC = 250V I_C = 5I_B1 = -5I_B2

tF

t_STG

tSTG, tF [μs], TIME

I_C[A], COLLECTOR CURRENT

0.1 1 10

10 100 1000

V_Clamp = 200V, V_BE(OFF)=-5V, R_BB=0 Ohm, L=200 uH, I_C = 5I_B1

t_F t_STG

tSTG, tF [ns], TIME

I_C[A], COLLECTOR CURRENT

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Typical Characteristics

Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Safe Operating Area

Figure 3. Power Derating

10 100 1000

0.01 0.1 1 10 100

TC=25 ^oC

10μs

DC

1μs

1ms

IC[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

10 100 1000 10000

0.01 0.1 1 10 100

Vcc=50V, I_B1=1A, I_B2 = -1A L = 1mH

IC[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0 20 40 60 80 100

PC[W], POWER DISSIPATION

T_C[^oC], CASE TEMPERATURE

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© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP5304D Rev. A 5

Mechanical Dimensions

TO220

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