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TIP100

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SGS-THOMSON

IMOtM&IOTTtRM DOS

TIP100/101/102 TIP105/106/107

POWER DARLINGTONS

:e s c r i p t i o n

T ie TIP100, TIP101 and TIP102 are silicon epi- al-base NPN transistors in monolithic Darlington :: nfiguration mounted in Jedec TO-220 plastic zackage, intended for use in power linear and swit- ng applications. The complementary PNP types v etheTIP105, TIP106 and TIP107 respectively.

STERNAL SC HEM ATIC DIAGRAMS

ABSOLUTE MAXIMUM RATINGS

Symbol P aram eter NPN

PNP*

Value

Unit TIP100

TIP105

TIP101 TIP 106

TIP101 TIP 107

VcBO Collector-base Voltage (Ie =0) 60 80 100 V

VcEO Collector-emitter Voltage (Is = 0) 60 80 100 V

Vebo Emitter-base Voltage (lc = 0) 5 V

•c Collector Current 8 A

cm Collector Peak Current 15 A

Ib Base Current 1 A

P tot Total Power Dissipation at Tcase £ 25 °C Tamb < 25 °C

80 2

W W

Tstg Storage Temperature - 6 5 to 150 °C

T| Junction Temperature 150 °C

' For PNP types voltage and current values are negatlve.

November 1988 1/5

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THERMAL DATA

Rth j-case Thermal Resistance Junction-case Max 1.56 °C/W

Rth j-amb Thermal Resistance Junction-ambient Max 62.5 °c/w

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Symbol Param eter T est C onditions Min. Typ. Max. Unit

ICEO Collector Cutoff Current fo rT IP 1 0 0 /1 05 VCe= 30 V 50 pA

(Ib =0) for TIP1 01/1 06 VCE = 40 V 50 pA

for T IP 1 02/107 VCE =50 V 50 pA

IcBO Collector Cutoff Current for T IP 1 00/105 VCB = 60 V 50 pA

(Ie - 0 ) for T IP 1 01/106 V0B = 80 V 50 pA

fo rT IP 1 0 2 /1 07 VCB =100 V 50 pA

Iebo Emitter Cutoff Current (lc =0)

>innm

> 8 mA

VcEO(sus)* Collector-emitter Sustaining lc = 30 mA

Voltage (lB =0) for Tl P100/105 60 V

for T IP 1 01 /1 06 80 V

for T IP 1 02/107 100 V

VcE(sat)* Collector-emitter Saturation lc = 3 A Ib= 6 mA 2 V

Voltage lc = 8 A lB = 80 mA 2.5 V

Vbe* Base-emitter Voltage lc = 8 A > III o II > 2.8 V

hFE* DC current Gain lc = 3 A Vce= 4 V 1000

20000 lc = 8 A VCE = 4 V 200

Vf* Forward Voltage of

Commutation Diode If= - lc = 10 A 2.8 V

(Ib =0)

Pulsed : pulse duration = 300 ps, duty cycle < 2 %.

For PNP types voltage and current values are negative.

Safe Operating Areas. DC Current Gain (NPN types).

2/5 C l

T SGS-THOMSON

“ ■7# WCBMJSCTRMDCS

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TIP I 00-TIP101-TIP102-TIP105-TIP106-TIPI 07

Collector-emitter Saturation Voltage (NPN types). DC Transconductance (NPN types).

Saturated Switching Characteristics (NPN types).

Small Signal Current Gain (NPN types). Collector-base Capacitance (PNP types).

SCS-THOMSON

^ 7 # MKfllHSUienHMICS

3/5

(4)

Small Signal Current Gain (PNP types).

Collector-emitter Saturation Voltage (PNP types).

DC Transconductance (PNP types).

O 1 2 3 -VBE (V)

DC Current Gain (PNP types).

Saturated Switching Characteristics (PNP types).

4/5 T SGS-THOMSON

“ ■ it MIOMIlUiCTBOIfflO

(5)

TIP100-TIP101-TIP102-TIP105-TIP106-TIP 107

Collector-base Capacitance (NPN types).

r z

7 SCS-THOMSON

^7# HMUMUCimMC*

5/5

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