Tranzistory. Čast' 4; Energooszczędne tranzystory o niskiej częstotliwości - Digital Library of the Silesian University of Technology

TPAH 3 ^WCT 0 Pb! ElOJIEBblE

MAJIOM MOLUHOCTH HW 3 ^K 0 M MACTOTbl

FIELD-EFFECT LO W -PO W ER LOW-FREQUENCY

TRANSISTORS

WÊÊÊtÊBÊKÊKKKÊÊKKIÊÊlHÊÊtKÊBÊÊÊÊÊÊHHÊÊl

. . . „ . n n i i T P A H 3 H C T 0 P b I IIO JIE B b lE MAJ10ÎÏ MOIIJHOCTH

Hfl103E-Hni03M, ^hhskob i« ™ ™

I i n i n n m I i m n O U D FIELD-EFFECT LOW-POWER LOW-FREQUENCY

n m U o t r -n lllU o m r

OBIUM E CBEA EH H Í1 G E N E R A L

KpcMHHCBbie nojieBbie flnqxJ)y3noHno-njiaHapHi.ie T p a in u c io p ti K r ii0 3 E —K n i0 3 M il no;io6paniibie b napw Tpaii3MCTopw KFI103EP— K I H 0 3 M P c p-n nepexonoM h KananoM p-Tnna npc;i- fia3»aMCnw flJifl paôoTbi b Bxofliibix xacKaaax ycHJiHTejieñ h m k o íí MaCTOTU, yCHJniTCJiefi noCTonmioro roKa h KJtiOHCBbix cxcMax anixapaTypbi uinpOKoro ripuMcncHnii. FkviGop Tpatt3ncTopoB b na- pi,[ npoii3BoziHTCH n o 3JieKTpn4ecKMM napaMCTpaM

1b9H> Si»! U C9 (o(l)

ÔÿôpMJieHHC — b ;ib>'x B apiiaiirax:

I — B MCTaJlJlHHCCKOM rCpMCTHHHOM BbiBOflaMH;

I l — b n n a c T M a c c o B O M r e p M C T t i M H O M

BbiBonaMH.

MuTepBaji TCMiiepaTyp OKpyacaïoiueii cpe;iw ot + 85 C.

M acca rpam ucT O pa He 6ojiee I r.

Kopnyce c rnÔKHMH K o p n yc e c j k c c t k h m h

— 55 a o

Silicon field-effect diffused p lan a r tran sisto rs K .ril03E K n i0 3 M an d dual tran sisto rs K .n i0 3 E P -K.I1103MP w ith a p-n ju n c tio n an d p-channel arc designed fo r o p e ratio n in in p u t stages

o f low -frequency am plifiers, D C am plifiers a n d gate circu its of eq u ip m en t o f wide a p p licatio n . T ran sisto rs are paired acco rd in g to

the electrical p aram eters '»RS> 6,,,». U c s <„fj) M o u n tin g tw o versions:

I in a m etal sealed case with flexible leads;

II — in a p lastic scaled case w ith fixed leads.

A m bient tem p e ra tu re range — from - 55 to 4- 85 °C.

T ran s is to r m ass — 1 g, m ax.

J max.

O C H O B H h lE A A H H b lE B A S IC S P E C IF IC A T IO N S 3.icKTpiiMccKiie napaiHCTpbi E lectrical P aram eters

—---— — --- -— —---— -

O ô o - PCJKHMbl H3MCpCHH«

ilapaMerpu ^3Hane- r- n i me Kni03ac

Kni03)KP KI1103H

Kni03MP Kni03K

KH103KP Kni03Jl Kri!03M M easu rin g co n d itio n s

HHfl Kl 1 IUjcv

Kril03EP Kni03JlP ^{K I1103M P} Uns,

P aram eters D e sig ­ uSs , • dss.

n atio n s V |xA

Tok CTOKa, mA ^{^DSS} 0,3—0,7 0,55—1,2 1— 2,1 1,7—3,8 3—6,6 5,4— 12 1 0 : 0 * —

D rain current, m A

KpyTH3na xapaKTepucTHKK, m A /B ërna 0.4— 1,8 0,7—2,1 0,8—2,6 1,4— 3,5 1.8—3,8 2—4,4 1 0 ; 0 * — T ransconductance, m A /V

HanpaîKeiHie otcchkh, B Ug8(oîI) 0,4— 1,5 0,5—2,2 0,8—3 ¹,4— 4 2—6 2,8—7 10 10

C ut-off voltage, V

Tok yïeHKH 3aTBopa. nA Igss 20 20 20 20 20 20 0 ; 1 0 * —

G âte leakage current, nA

K3ÿ4»<iuteHT uiyMa, ;iB ^{F 3 3 3 3 3 5 5; 0*}

N o ise fa cto r, dB EMKOCTb, ntt>:

C a p a c ita n c e , p F :

BxomiaH C i,s 20 20 20 20 20 20 10; 0* —

inp u t

c 8 8 8 8 8 8 1 0 ; 0 *

—

npoxonHa» ^{' “•158}

tra n s fe r

78

T P A H 3H C T 0P bI n O J I E B b lE MAJIOft MOIIJHOCTH H H 3 K 0 K MACTOTbl

FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

Kni03E-Kni03M, Hni03EP-Hni03MP

llpeje.ibiibie siianeiiiiH aomvcihmi.ixpcvkhmob aKcii.iyaiaiiiiii Maximum Values o f Allowable O perating Conditions

Kril03E Kni03W Kn 10311 Kni03K Kril03/I K ill03M

MaK’CHMa.'ibiio ao n y cT H M o e cy M M ap n o e H an p aw e u H e Meatfly c to ko m 11 33TBOPOM ( U ,)9+ U os)„„«, B

M a x im u m a llo w a b le s u m m a tio n d r a in - to - g a te v o lta g e (U Ds + U<is)lliax, V

15 15 15 15 17 17

MaKCHMajibtio ao n y cT H M o e n o croH H H oe HanpuJiceHMe n a ctokc

^IIS max« B

M axim um a llo w ab le d irect d ra in v o ltag e, U DS man V

10 10 10 10 10 10

MaKCHMajibtio flonycTH M aa pacceiiBaCM asi m o iu h o c t i, P IIUIS, mBt

M axim um allo w ab le d issip atio n p o w er, P,„ai, m W

7 12 21 38 66 120

SaBHCHMOCTb H anajibnoro Tona croKa o t HanpaxeHHH c to k - h c to k npn p a 3 n n ‘inoM iianpa- 5KCHHH 33TB0p-HCT0K

D rain c u t-o ff c u rre n t versus d rain -to -so u rce voltage a t v a ri­

ous gate-to -so u rce voltage

, mA KPW3E hss.m A xntOiM

3aBiicnMocTb n a iia;ibiioro TOKa cto k b o t HanpKiKeHHfl 3aTB0p-HCT0K Iipil pa3JlHMH0M HanpajKeHHH c to k -h c to k

D ra in c u t-o ff c u rre n t versus g ate-to-source voltage a t v ario u s d rain -to -so u rce voltage

V 1 1 v\ -UnsW

S' “ )0

\JLU5

\ \ -

; 3.2 .* t s .8 1,0 (Z

,

\\\Htos=W

\ i-tO 1

\ k

ss

\ N

I in A KÍ1103U

0,2 55 Ipss,mA

0,6 OS Kfl 103/1

'Uns’lfi1 1

•ÎÎ-to c5 A,

V\

1 1

sV ^V

S" o 1

s

s

o au as i,2 (5 2,ou®’v 0 0,5 !,0 1,5 2,0. 2,5

_______ t>as.y

0 0,5 1,0 1,5 2,0 2J5

„ hss.m A KÍ1I03n

nyli V s\r S\

s

Vos,VO I 2

79

Km03E-Km03M, Kni03EP-Kni03MP

TPA H 3M C T0PW nO JT EB blE MAJIOtt MOLUHOCTH HH3KOM MACTOTbl FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

KM032K

3aBHCHMOCTb K03tI)<t>HUKeHTa

u i y M a o t u a r ip jry K C H H ji 3a r - B O p -I I C T O K n p n p a3/lH H H OM H a n p a w e H H H c t o k - h c t o k

N o ise fa cto r versus gate-to- source voltage a t various d rain -to -so u rce voltage KntD3£

K M 03H

0 OJ0,2 0,30,40.50.607080,9Uc s V0 0,1 0,20,3Ofi0,5Of 0,70,8 O.S 1,0(t 1.2 U^y

,

KM 03K

__ I 1 I I I [ [ j /

/CDI03M

3aBHCKM0CTb KO'3<t)(]ninneiiTa uiyMa o t conpoTHBjieiutfl b uemi 3 a T B 0 p - n c T 0 K

npn pa3JiHMiH0ii nacTore

N oise facto r versus resist­

an ce in gate-source circuit

a t various frequency -75 -50-250 25 50 75 iOO 125

3aB iiCH M 0 CTb TOKa 3a T B o p a o t le .M n c p a iy- 3aBHCHMOCTt K03(jj(j)HUHeHTa U iy M a OT *,bI ° KP>'3KaloUlcil cPc^bI

T e M n e p a T y p b t O K p y a c a i o m e i i cpeitbi G ate c u r r e n t versus a m b i e n t t e m p e r a t u r e

N oise fa cto r versus am b ien t tem perature

yK A 3A H H H O O ÍIPM M EHEHM K) H 3K C I1JIYATAUMH IN STR U C TIO N S O N U S E

riaflK a BbiBoaoB n p n 6 o p o B xtonycicaerca n a paccToam nt He Menee 5 mm (a n a BapHairra 1) h ne Menee 3 mm (juta B apuairra II) o r Kopnyca. n a « T b cJteayeT npw TeMnepaType ite 6ojiee 260 ,!C b TeseHHe ne 6onee 3 c.

ripn n c n o n b 3 0 B a H iiu n a p b t T p a n 3 iiC T o p o B b a r m a p a T y p e n.'iit 060HX ïipHÔOpOB flOJDKHW 6bITb OÔeCITCHCHbl OitHH H T e 5Ke 3JieK Tpit- necK H e pe5KHMbi h T e M n ep a T y p H b ie y c jio B ita SKCnjiyaTauHH c t o h - HOCTbtO JXO ± 1 , 5 ° C .

T ran sisto r leads m ay be soldered a t a distan ce o f a t least 5 mm (fo r version I) an d a t least 3 m m (fo r version II) fro m the case.

S oldering shall be accom plished a t a tem p eratu re o f n o t h igher than 260 °C for n o longer th a n 3 s.

W h en a p a ir o f tran sisto rs is used in eq u ip m en t, the same o p e ratin g a n d tem p eratu re con d itio n s (accu rate to ± 1 .5 °C) should be provided for b o th devices

T P A H 3H C T 0P bI IlO JIE B b lE MAJlOft M 0IHH0CTH

H H 3 K 0 H MACTOTb, K H Cl 04 A~ K H Cl 04/Î

FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

OBIUHE C B E /tE H H fl GENERAL

K p e M H iie B b ie a n n T a K C H a ^ b H O - r a a tia p H b ie c p - n r ie p e x o /t o M h K a n a jio M n - T i i n a c f l B o e i i n u c n o n e B b i e T p a H3H c r o p b i K IIC 104A— K nC 104A n p e ; x n a3iia>ieni>i / v i a BXOflHbix K acKaAOB flH <j)f|)epeH U HaJib- iibix y c n .'iH T C jie it n o c T o a u n o r o TOKa h h h3k o î î n a c ro T b i c b b ic o k h m BXOflHbiM c o n p o T H B jie H iie M a n r i a p a T y p b i u n t p o K o r o np H M eH C H H a.

OijjopMJieHiie — b MeTajiJinnecKOM repMCTHMiioM Kopnyce c rllfjKHM H B blB O flaM H .

MHTepBan TeMrieparyp OKpyxcaiotneii cpeflbi ot — 40 /jo + 85 °C.

M acca T pam itcTopa ne 6ojiee 2 r.

S ilicon e p itax ial-p lan ar field-effect d u al tran sisto rs K IICK M A K n C 104/1, with a p-n ju n ctio n an d n-channel are designed for use in inp u t stages o f differential D C an d low -frequency am plifiers with a high in p u t resistance o f eq u ip m en t o f w ide a p p licatio n .

M o unting — in a m etal sealed case w ith flexible leads.

A m b ien t tem p e ra tu re range — from - 4 0 to + 8 5 °C . T ran s is to r m ass — 2 g , m ax.

O C H O B H blE Æ AH H blE BASIC SPECIFICATIO NS S.iCKrpii'iecKiie napaMeTpbi Electrical P aram eters

napaMeTpbi Oooiiia-

HCHHfl Value

PeJKHMbl H iMCpeiliiS!

Measuring conditions

Parameters Desig­

nations

ne Menee, min

HC Go.’tCC, max

Uns, USs.

V

mA*1*. 1[).

mA R(¡.

kQ f,

Hz

KpyTH3Ha xapaKTcpMCTMKn, mA /B : T ra n s co n d u c ta n c e, rn A /V :

S..» — — 10;

0*;

— — —

K n C 1 0 4 A , K I7C 104E 0,35 — — — — — —

K n C 1 0 4 B 0,65 — — — — — —

K n c i 0 4 r , K I1C 104A 1,0 —

—

HaHajibHbifl t o k CTOKa, mA : D ra in c u t-o ff c u rre n t, m A :

Idss — — 10;

0*

• — ;— — —

K n C 1 0 4 A , I< nC 104B 0,1 0,8 — — — — —

K n C I0 4 B 0,35 1,5 — — — — —

K n c i 0 4 r , k o c i 04/1, 1,1 3,0 — — — — __

T o k saTBopa, nA : G ate c u rrc n t, nA :

1g8s — — 0;

10*

—

K n C 1 0 4 A , K n C 1 0 4 B — 0,3 — — — —

l< n C 1 0 4 B — K I1C 104A — 1,0 — — — —

HanpaM iemie otcckkh, B:

C u t-o ff v o ltag e, V :

U{)8 <„(() — — 10 0,01

— —

K I1 C I0 4 A , K n C 1 0 4 B 0,2 1,0

— — —

K n C 1 0 4 B 0,4 2,0

— — — —

K n c i 0 4 r , K n c i 0 4 f l 1,0 3,0 — — — — “

OTH om eH iie HanajibHbix t o k o b C T O K a R a ti o o f g a te c u t- o f f c u r r e n ts

mla 1ds8 max

0,9 10;

0*

—

O tH om eH H e n a tip a /K e n n a otccmkii C u t- o f f v o lta g e r a tio

Uc8(Q(l)niln Ucs(olf) max

0,9 10 0,01 -

HnC104A-HnC104fl

T P A H 3 H C T 0 P b I n O J I E B b lE MAJlOfi MOIIJHOCTH H H 3 K 0 f l HACTOTbl

FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

3HUHCHHH PeJKHMbl HIMepeHHH

O ö o u ra -

HeilMH V alue M easu rin g co n d itio n s

P aram eters D esig­

n a tio n s

n e Meiiec, m in

ne 6o.ncc, m ax

Ud s. U,*M- V

Ir».

mA Id.

m A R«,

kQ H z^r,

T eM nepaT ypH biii Jipeiicj} pasHOCTH iia n p a -

Mcennir 3aTBop-HCTOK, mB /" C : ^ i^GSl ^032^

/IT

— —

-- — — —

T h erm al d rift o f g a te -d ra in voltage difference, n iV /“C :

K n C 1 0 4 A K n C 1 0 4 B K n C 1 0 4 B K n c i 0 4 r K n C 1 0 4 A

—

50 150 150 100 150

— —

0,18 0,18 0,5

1.5 1.5

—

—

lilyM OBoe wanpa>KeHne,

cpeaH eKBaflpaTiiHHoe 3 n aH en n e , m kB:

N o ise v oltage, ro o t-n ie an -s q u are value, ,uV :

U j, — — 10 — 30 0,1 — 10

K n C I0 4 A K nC I04B KI1C104B K n c i 0 4 r K riC I0 4 A

—

0,4 1,0 5.0 1.0 5,0

—

--

0,5 1.5 1.5

— —

I Ipe.'ic.'ibiu.te au aieiu u i aonyciH M w x pC/Kiimoii jK cii.iyaiaum i M axim um Values o f Allowable O perating Conditions HaripjajKeuHe mokhvctokomhhctokom

(^amb — 4 0 .. . 4-85 C) U BS I0aj, B 15

D rain -to -so u rce voltage

l « b = - 4 0 . . . + 8 5 °C ) U I ) 3 V H an p ax eu H e MeiKAy laTBopo.M m c t o k o m

( U b = - 4 0 . . . + 85 C) U 0D B 20

G a te-to -d rain voltage,

(t —4 0 . . . + 8 5 °C ), U(JD max. V HanpjixceHne Meatfly 3aTBopoM hh c t o k o m,

np«Moe U i;g llwx. B 0,5

D irect drain -to -so u rce voltage, U(:s max’ V

M om nocTb paccennauHsi KavKiioii h o.t o h h i h.icflBoennoro Tpan3ncTopa, P lUa i, m B t:

D issipated pow er o f each h a lf o f dual tran sisto r, P,Us B m W :

U b = — 4 0 . . . + 85 ° C ta m b = 3 5 ° C

45 25

*> r ip » t:,n,b ■ —40. , . + 85 °C P jis B m u x paccH H Tunaerca n o ÿopM yjie:

145 — tamb

^dis D max ! _2,5

A t tamb “ —4 0 . . . + 85 °C , Pm« x> max ,s calcu lated by fo rm u la : Pdl- D t 145 — tamb

2.5

T ran sie n t responses a t v arious a m b ie n t tem p eratu re

riepexo^H bie xapaKTepHCTHKH npn p aiJiH H H O H T e M n e p a T y p e o x p y îK a ï o - LLieH cpejibi

82

r ie p e x o A H b ie xap aK T ep H C T H K H n p i i pa3J!H H H blX HanpflvKCHHflX CTOK- HCTOK

T ran sien t responses a t various d rain -to -so u rce voltages

m m A , K n c m s i a mA

K n c io t r .K n c i O A A lv .m A , K I1C I04B I B im A

W tt-- is m Uas-tOfXy

B b ix o f lH b ie xapaKTepHCTHKH O u tp u t c h aracteristics

KnCI04A,KflCIM6

K ncto^e,

K nci04r,K nci04A

9 n .n W

K nao^r.K naohA KHCI04B

3 a B H C H M O C T b K p y T H 3 H b l X a p a K T e p H C T H K H OT T C M n e p a T y p b i o K p y > K a to m e ii c p e f l b i T ran sco n d u ctan ce versus a m b ie n t tem -

peratu re

K n c m r .m M A gfs.mA/r K/1CI04A, KnCIOASSis^ii

M C I 04 B 9 3aB H C H M 0C Tb K p y T ii3 H b i x a p a K -

TepHCTHKH OT H atipjO KeHH H 3aT B O p- HCTOK

T ran sco n d u ctan ce versus gate-to- source voltage

K n c m r m m p .

mme.

m c m k M c m e - F R X J

Un&'lOV

_

3 a B H C H M O C 'rb H a v a n b U o r o TOKa cT O K a OT T e M iie p a T y p b i O K p y » :a io m e H c p e f l b i D ra in c u t-o ff c u rre n t versus a m b ien t tem p eratu re

83

HílC104A-KnC104fl

T P A H 3 H C T 0 P b i n O J I E B b îE MAJIOH MOUtflOCTH TPAH3HCTOPbI n O J I E B b lE MAJIOPÏ MOUJHOCTH H H 3K O H MACTOTH HH3KOW MACTOTbl

FIELD-EFFECT LOVY-POWER LOW-FREQUENCY FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS TRANSISTORS

HnC104A-HnC104fl

3aB iicnM ocxb nanpflMcenHH OTCCHKH OT TeMnepaTypbi OKpy»caiomeñ c p e a b i Cut-oiT voltage versus a m ­ b ien t tem p eratu re

r n m k - m m b 1 m m ,m m

tamSy 15 2535^555 65758535105

3a B11C H MOCTB TOKa yTC'iKH 33TB0pa OT HanpaaceHHa 3û t b o p-hctok

G a te leakage c u rre n t versus gate-to-source voltage

3aBHCMM0CTb TOKa yreHKH 3aTBopa o t T eM n ep aiy p b i OKpyacaiow eit cpeflbi G a te le a k a g e c u r r e n t v e rsu s a m b ie n t te m p e r a tu re

1,4 1,2 1,0 o.s 0,6 0,4 0.2

C us,*?

2 4 6 8 10 12 14 16 18 20 UCS,V

3aBHCHM0CTb nepexoflHOfl cm kocth OT HanpHJKeHHH 3 a T B O p -IIC T O K

Ju n c tio n cap acitan ce versus get-to-

source voltage 2 tem p eratu re d rift 0.15-0mV

€

3aBHCHMOCTb B X O flH O ÍÍ CMKOCTH OT HanpaJKeHH» 3 a T B O p - H C T O K

In p u t cap acitan ce versus gate-to- source voltage

VKA3AHHJ1 n o ilP H M E H E H H IO II 3K CnJlY A TA U H M INSTRUCTIONS ON USE

ripw Moina'/KC AonycKaeicii H 3rn6 bm boaob n a p accio jiiin n hc Menee 3 mm o r Kopnyca c pajw ycoM aaKpyrjiennsi tie Menee 1,5 mm, a naüKa — n e Meiiee 5 mm o t xopnyca. ñ a i í K y npou3B o;inre b tc - ïeHHe He 6ojiee 10 c. Tew nepaTypa naííKii He ao-naaia iipeuhima i b 260 °C.

FIpii 3K cnjiyaT annn Tpan3M cropoB b ycJioBiiiix MexanHnecKnx B03AeíiCTBHÍi hx uco6xo;u im o xpenHTb 3a K opnyc, y>um .iaasi, n o Bee BbiBOflbi ii30JiHpoBanbi o t Kopnyca. Sjicm cht Kpenjiennii floji/Ken o 6ecne4HBaTb 3a3CM.'ieiuie Kopnyca.

PCKOMCHAyCMblH pOKÜM paÔOTbl.

Uns = 10 V; S ip = 0,18 mA (K nC104A, KnC104E);

Z ID = 0,5 mA (KnC104B);

21n = l,5 M A (K n C 1 0 4 r, KHCI04/1)

In m ou n tin g the tran sisto r, it is allow ed to bend th e leads at a distan ce o f a t least 3 m m fro m the case, th e ben d in g rad iu s being n o t less th an 1.5 m m , the leads m ay b e soldered a t a d istance o f at least 5 m m from the case. Soldering p ro ced u re should last fo r no longer th an 10 s, the soldering tem p eratu re n o t exceeding 260 °C.

W hen transistors a re to o p e rate u n d er the co n d itio n s o f m e­

ch an ical effects, they should be secured by the case, it should be rem em bered that all the leads are insulated from the case. The fastener should provide for case grounding.

R ecom m ended o p e ratin g cond itio n s:

U ns = 10 V; 1TD = 0.18 m A (KITC104A, KTICI04E);

r i D = 0.5 mA (K nC104B);

¿’Id = 1.5 m A (K nC 104T, K.nC104fl)

3aBHCl!MOCTb paSHOCTH HanpflVKCHHM n a 3 a T B o p a x o t TeM nepaTypbi OKpy- acaiomefi cpe/ibi :

/ — TeM nepaTypubiH npeii([) =s 0 ,05mV

2 — TeMnepaTypHbtii /tpeiiij) 0,15mV

V oltage differential at gates versus a m b ie n t tem p e ra tu re:

I — tem p e ra tu re d rift =s 0.05 o^rmV

TPAH3M CT0PbI ITOJlEBblE MAJIOfl M01HH0CTH H H 3 K 0 K MACTOTbl

FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

Hn202Æ, KÍ1202E

OKIHHE C B E A E H H fl GENERAL

Kpe.MHueBbie óecK opnyciibie H0»H0JierHp0BaHHbie 3m rraK - ciiajibHO-njiaHapHbie c p -n riepexoflOM h KanajioM n - r n n a M ajio- myMmnHC HOAeBbie TpaH3iicTopbi l< n 202/1 h K T I202E n p e /w a - 3siaHeHbi fljiH pa6oT M bo bxoahm x K acK aaax yciuiHTe.nefi nocTosm - Horo TOKa H HH3KOH HaCTOTbl. TpaH3HCTOpbI IipHMeHSUOTCH B co - CTaBe r n 6 p n ;jn b ix iiin crp a Jib H b ix miikpocxcm n n n an n ap a T y p b i m iipoK oro npHMeHeHHH, hm ciouuix repMeTHHHbie K opnyca h jih HHyio 3atm iTy o t aeiicTBHSt co -n n em io ro CBCTa, BJiarii, c o jia n o r o TyMana, roiecneBbix rpn6KOB h a p y r iix arpeccHBHbix c p e a , noBbi- meHHoro h rioHHACHHoro a iM o c ilie p iio ro naBJieiiHsi, MexanniecKHX noBpestacHHii.

04)opMACHne 6ecKopnycHoe.

yCTOÎiHHBOCTb K BHCLUHHM B03fleilCTBHHM : MHoroKpaTHbie yjiapbi c ycKopeHiieM a o 75 g, JiimeiiHbie narpy3KH c yctcopemieM ao 25 g, HHTepBan TCMnepaTyp OKpy/Kaiouiefi cpcnw + 70 °C.

Macea T p ain n cro p a ne öojiee 0,2 r.

o t — 45 a o

Silicon chip ion-alloyed epitaxial p lan a r low -noise p-n ju n ctio n rt-channel field-effect tran sisto rs K I I 202/1 an d K I1202E a re designed for o p e ratio n in in p u t stages o f D C an d low -frequency am plifiers.

The transistors a re also em ployed in h y b rid integrated m icrocircuits of equipm ent o f w ide ap p lic atio n , provided w ith sealed cases o r any other p ro tec tio n a g ain st the effect o f sun rad ia tio n , m o istu re, sea fog, mold fungus a n d o th e r aggresive m edia, high an d low atm o sp h eric Pressure, an d m echanical dam age.

M o u n tin g — w ith o u t an y case.

Resistance to ex tern al effects:

m ultiple im p a c ts a t a n acceleratio n u p to 75 g ; linear a cc eleratio n u p to 25 g ;

a m b ien t tem p e ra tu re range — from - 4 5 to + 7 0 ° C . T ran sisto r m ass — 0.2 g, m ax.

Hfl202fl, HÍ12Q2E

TPAH3 HCT0 PbI nOJIEBblE MAJIOfl MOUJHOCTM TPAH3 HCTOPbI nOJIEBblE MAJIOfl MOIIIHOCTH HH3 K0 A MACTOTbl HH3 KOK MACTOTbl

FIELD-EFFECT LOW-POWER LOW-FREQUENCY FIELD-EFFECT LOW-POWER LOVV-FREQUENCY TRANSISTORS TRANSISTORS

HnC202A-HnC202r

O C H O B H b lE M H H b l E B A S IC S P E C IF IC A T IO N S 3.icKTpn'iecKne napaw erpbi E lectrical Param eters

Ila p aM eT p u O ñ o sn a se n n «

3naMenna V alue

PCWHMU HIMepemiH M easu rin g co n d itio n s

P aram eters D esig n atio n s ne Menee,

m in

He öojice, m ax

U US,

V V Id s s.

m A

K pyT H 3na x a p a K T e p iiC T itK H , m A / B : T ran s c o n d u c ta n c e , m A / V :

S n» — — 10 0 — j

K 1 1 2 0 2 ,0 , K f I 2 0 2 E

0 , 6 5 1 ,0

— — — —

H aaaabiibiil t o k CTO K a, mA :

D ra in c u t-o ff c u rre n t, m A : I n s s K n 2 0 2 f l

K Ü 2 0 2 E

0 , 3 5 1,1

1 ,5 3 , 0

— — —

To k s a T B o p a , n A G a te c u rre n t, n A

Hi sa — 1 ,0 0 — 10 —

H anpa^K eim e o t c c m k h , B :

C u to ff v o lta g e , V : ^{Ug s (oil) — — 10 — 0 ,0 1}

K n 2 0 2 A K n 2 0 2 E

0 , 4 1 ,0

2 , 0 3 .0

— — —

E M K O C T b, n<l>:

C a p ac ita n ce , p F ; BxoaHaa inp u t npoxoaH aa tran sfer

Cl is

C 12S —

6 2

10 10

0

0 —

I lpe,u\'ii.m,ie 3na<ieiui» aonycniM bix pe-/KiiMOB JKCii.iyaTiunin M axim um Values o f Allowable O perating C onditions HanpaKCHHC m okav ctokom h hctokom

(t^mb = — 4 5 . . . + 7 0 ° Q U I)S n,a i , B D rain -to -so u rce voltage

( U b = — 4 5 . . . + 7 0 ° C ) , U D Snl„ , V H a n p a a c e n n e MOKay c to k o m h 3aT sopoM (^amb = — 4 5 . . . + 7 0 C ) U l!8lll. „ . B G ate-to -d rain voltage

( U i = - 4 5 . . . + 7 0 ° C ) , U c s V

15

20

M o u m o c T b pacceHBaHHH, P1)a > ( b co cran e yanoBH O fi M H K pocxeM bi), mBt:

D issipated pow er, P Dg nlaxl> (as a co m p o n en t o f co nventional m icrocircuit), m W :

t i, - — 4 5 . . . + 35 °C t = 7 0 . . . 3 ° C

4 0 5 0

l ; ß (liiTcpDaJie TCMneparyp o t —45 ;io -t- 70 CC mouihoctł pacceHBamm paccin- TWBaeTcs n o itiopsiy.ne:

1^ — t a a b 1,5

OrpuHHHCHHe MOU1HOCTH p u cco! nam i h n p ii TeMnepaTypc 70 C aoCTiiraeTCÄ pcry.mpoRKOii HanpflKeHitfl ncTOK-3aTBop.

Pds t

y K A Î A H M a

no

n a iiK a BbiBoaoB flonycK aeTca Ha p a ç c T o a H H M H e MeHee 1 ,5 m m o r K p as TpaH3HCTopa. MiiHHM anbHoe pacCTOHHue a n a n 3 rn 6 a BUBOflOB — 1 m m o r Kpaa n p n 6 o p a c p a a n y c o M 3 ak -p y ra en n a He M enee 0 , 5 m m . r i p n n a flx e a o a j k h h 6bm > n p u H x r a M epw , h c k jh o - H ato u u ie HarpeB rip iiS o p o a B b t m e 8 5 ° C ,

i> W ith in te m p e ra tu re ran g e fro m - 4 5 to + 7 0 C . d issip ated p o w er is calculated by fo rm u la:

p __ 145 — tamb

11)3 max — «

A t a te m p e ra tu re o f 70 C , d issip ated p o w er is lim ited by v a ria tio n o f so u rc c -to g a te voltage.

The leads m ay be soldered a t a d istan ce o f a t least 1 .5 m m from the tran sisto r edge. In ben d in g the leads, sec th a t the m in im u m dis-;

tance fro m the tran s is to r edge is 1 m m , the ben d in g rad iu s being at least 0 . 5 m m . In soldering, tak e m easures to prevent the transistor from heatin g above 8 5 ° C .

0E1UHE C B E ß E H H fl GENERAL

KpeMHueubie öecKopnycuwe HOHHOJiernpoBaniibie aniiTaK- CHaJibno-njjanapHbie c p-n rrepexoflOM h K a n a a o M n -T H n a CABoeii- Hbie ManomyMflUtHe noaeiibie TpaH3ncropM K H C 202A —K flC 2 0 2 r npeflHa3HaHcnbi a a a paßoTbi b cocTanc bxoahm x KacKaaoB B bico- KOwyBCTBHTCJibiibix m nerpaabH bix M H K p o cx e M c ac ay io m ero na- 3naHeHHa:

BbicoKOHacTOTHbie onep au H O H H b ie ycH.’iineJHi pa3an>moro ueJieBoro Ha3HaiieHiia;

M aJiom yM am H C aw|>c|>epeHUHa a b itb ie ycHJHtTCJin c b w c o k h m IJXOflHblM COnpOTHBJICHHCM flJISI HCIT0J7b3OBaHHa B MCAHKO-6hOAO- ruMCCKOii a n n a p a T y p e :

M aJiouiyM HiUHe G a a a n c iiw e cxc m b i p a u iiw io r o T n n a c b w c o- KMM BXOflHblM COnpOTHBaCHHCM.

TpaH 3H C Topbi npH M en aiO T ca bc o c tb b c rn G p iu u ii.ix m n e i p a jib - itbix M iiK pocxew a n a a n n a p a i y p b i m n p o K o r o np iiM C H ern ta, h m c io- uteii rep M eT H iH b ie n o p riy c a n a n im y io s a in n T y o t a e iiC T n n a c o a - HCHHoro CBeTa, B a a r n , c o a a n ą r o . T y M a n a , rra e c n e B b ix rpHÔKOB u a p y riix a rp e c c H B n w x c p e a , n o B b n u e H H o ro u n o H n » c e n H o ro aTM Oc-

<j>epnoro a a B a e H H a , MexanHHectCHX n o B p e * a e H n » . TpaH 3H C T opbi K I 1 C 2 0 2 A , K Ü C 2 0 2 B n o c T a B a a r o r c a T o ab k -o a a a ane}>(j>epeHUHaflb- Hbix ycH A H T eaeií T u n a K 2 8 4 Y A 1 •

0(j)opM aeiine 6ecKopnycnoe.

YCTOilHllBOCTb K BHeLUHMM B03fleflCTBHaM:

MHoroKpaTHbie yaapbt c ycKopeHneM a o 7 5 g, AHHeüHbie Harpy3Kn c ycKopemieM a o 2 5 g, HHTepBaa T C M nepaT yp OKpy>Kaionieri c p e a b i

+ 7 0 C .

Macca TpaH3HCTopa hc6 o aee 0 , 5 r.

o t —4 5 a o

Silicon ch ip ion-alloyed epitaxial p lan a r low -noise p-n ju n ctio n n-channel field-effect d u al transistors K Ü C 2 0 2 A —K n C 2 0 2 F are designed for use in in p u t stages o f highly sensitive integrated m i­

crocircuits o f the follow ing a p p lic atio n :

high-frequency o p e ratio n a l am plifiers o f various a p p lic atio n ; low-noise differential am plifiers with a high in p u t resistance for use in m cdico-biological e q u ip m en t;

low-noise b alanced circuits o f various types w ith a high in p u t resistance.

O C H O B H b l E / l A H H b l E B A S I C S P E C I F I C A T I O N S 3-iCKTpiiHecKiic n a p u M e ip b i Electrical P aram eters

T he transistors a re used in h ybrid integrated m icro circu its o f eq u ip m en t o f wide ap p lic atio n , provided with sealed cases o r any o th er p ro tectio n against the effect o f sun rad iatio n , m oisture, sea fog, m o ld funges an d o th e r aggressive m edia, high an d low atm o s­

pheric pressure, an d m echanical dam age. T ran sisto rs K n C 2 0 2 A , K H 2 0 2 B a re delivered fo r differential am plifiers, type K 2 8 4 Y / 1 1, only.

M o u n tin g — w ith o u t any case.

R esistance to ex tern al effects:

m u ltip le im p acts a t a n acceleration up to 7 5 g;

linear acceleratio n up to 2 5 g;

a m b ien t tem p eratu re range — from - 4 5 to + 7 0 ° C . T ran sisto r m ass - 0 . 5 g, max.

napaMCTpbi Ooo3Ha-

MeHHH

3HaHeH»iH V alue

POKHMbI H 3 M e p e H H f l

M easu rin g c o n d itio n s

P aram eters D esig n a­

tio n s

n e MeHee, m in

n e 6 o ^ e e, m ax

Ui>3,

V Ug s.

V Idss*

m A ÎD*

m A

K p y n n n a x a p a K T e p H C T H K H , m A / B : T ran sco n d u ctan ce, m A / V :

Sms — — 10 0 — —

K I 1 C 2 0 2 A , K I T C 2 0 2 B 0,5

_ _ _ _ _

K T 1 C 2 0 2 B 0,65

— — _ _ —

K n C 2 0 2 F 1,0 — — — — —

HanaabHbiii t o k C TO K a, m A : Drain c u t-o ff c u rre n t, m A :

— — 10 0 — —

K r i C 2 0 2 A , K n C 2 0 2 E 0,25 1,5

_ _

_ _

K n C 2 0 2 B 0,35 1,5

— — —

K n C 2 0 2 F U 3,0 — — —

Tok s a T B o p a , h A : G âte c u rre n t, nA :

Igss — — 0 — 10 — —

K I1C202A . K I1C202B

—

— _ _ _

K I1C202B, K n C 2 0 2 F — 1,0 — —

_

86 87

.,-n„ „„rnnnnni,— ...

T P A H 3 H C T 0 P b I n O J I E B b lE MAJIOft MOJUHOCTH HH3KOW MACTOTbl

HilC202A-HnC202r FIELD-EFFECT LOW-POWER LOW-FREQUENCY TRANSISTORS

3HaHCHHfl PeaciiMb! H3Mepemtfl 1

napa.MCTpw 06o3»a-

MCHHH Value Measuring conditions

Parameters Designa­

tions lie Mcnee, min

ne Gojiee max

Uj,s, V

I U(W,V 1dss>

m A tl>.

mA

H a n p a K e n n c otcchkh, B : U (,s (off)

| I

10 — 0,01 —

C u t - o f f v o lta g e , V :

K I I C 2 0 2 A , K n C 2 0 2 B 0 ,2 2 ,0 — — —

K IT C 202B 0 ,4 2,0

K n c 2 0 2 r 1,0 3 ,0

P a 'iH o c rb HanpsTAXHHii 3aTB0p-ncT0K , mB : IU0S1-

— —

D iffe re n c e o f g a te - to - s o u r c e v o lta g e s , m V : K T IC 2 0 2 A , K I1 C 2 0 2 B

K F IC 2 0 2 B

_

—

0 ,5 0 ,5

K n c 2 0 2 r 30 1.5

Em kocti., n<l>: — — 10 0 — —

C a p a c ita n c e , p F :

BXOAHaa ^{C iis — 6 — — —} —

in p u t

c ²

_ _ —

npoxoAHaH ^ 129

tra n s f e r

T e M n e p a ry p H b iii Apeiict) pa3H0CTH naripflw enH ii 33TB0P-HCT0K ( t amb = 85 + 2 C ), mB / C :

U 0 82

" A T — — 10 — — —

T e m p e r a tu r e d r if t o f d iffe re n c e o f g a te - to - s o u r c e v o lta g e s

( U „ = 8 5 ± 2 °C ), m V /° C : 0 ,0 4

0 ,1 5 0 ,1 5

0,5 0 ,5 1,5 KI1C202A, KHC202B

K I1 C 2 0 2 B K n C 2 0 2 f

—

=

—

n p e .ie .ib iii.ie 3ii;imciihii flonycniM M X peatitMOB SKCii.tyaTatuin M a x im u m V a lu e s o f A llow able O p e ra tin g C o n d itio n s

H anpsuK em te Me>Kay ctokomhhctokom KawAOii noJioB nnw cflBceHH oro T p a im ic T o p a

(tamb = —4 5 .. . + 70 °C) B 15

D r a in -to - s o u r c e v o lta g e o f e a c h h a l f o f d u a l tr a n s is to r (tlmb = - 4 5 . . . + 70 °C), U DS max» V

HanpSlVKCHliC MOKAY CTOKOM H 3aTB0p0M KaJKflOii nojiOBHHbi cviBoeiiHoro TpaH3iiCTopa

Oamb ” 45. . . + 70 C) U 0Smai , B "0 D ra in -to - g a te v o lta g e o f e a c h h a l f o f

d u a l tr a n s is to r (tanjb = —4 5. . . + 70 °C), U c a mux, V

^ B HHxcpBane TCMnepaxyp o r — 40 .no + 70 ' C moiuhocii» pacceHBannH zt/ui Kancfloft nojiOBHiiw cn B o em io ro T p a n m cT o p a paccHHTbiBaeTca n o 4>opMyne:

„ 145 — tamb

“ l>S max — * ^ ’

OrpaHHMCMHC mow hocth pacceuBamiH n p n TeM neparypc 70 C «aocrnraeTCH per>7HipOBKOH lianpflJKCHHH MCTOK-3aiBOp.

MoLHHocTb p ac c e n B a m ia b cocTaBe ycJiOBtioii m hKpocxeM bi, Pds mBt:

D iss ip a te d p o w e r (a s a c o m p o n e n t o f c o n v e n tio n a l m ic ro c irc u it), P ns mm11. m W :

naJKaoii nojiOBHHbi cABoemioro TpaH3ncTopa ( U b = —45. . . + 35 C)

o f e a c h h a l f o f d u a l tra n s is to r , (t,lmb= - 4 5 . . . + 3 5 ° C )

cflBoeHHoro T p a in n c T o p a ( tal!>b = 7 0 ± 3 °C) o f d u a l tr a n s is to r

(t„„„ = 70 ± 3 °C)

O w ith i n te m p e ra tu re ran g e fro m —40 to f 70 C , d issip ated p o w er fo r each h a lf o f d u a l tra n sisto r is ca lcu la tcd by fo rm u la :

145 — t3nib

‘ D3 max — J

A t a te m p e ra tu re o f 70 ° C , d issip ated p o w er is lim ited by v ariatio n o f so u rce-to - g ate voltage.

yKA3AHHH HO IlPHMEHEHlllO M 3KCnJlYATAUHM INSTRUCTIONS ON USE

PeK O M eH flyeTca 6paTb lp a in M C io p h 3 con p o B O A H T eJib n o îi T a p b i nm m eT O M 3a ö o k o b m c c B o ß o a H b ie o t b b i b o a o b r p a t m , rip eflB ap H T ejib H o orbeA H H U B n n u u e ro M b h b o a h n p n 6 o p a o t BUBOAOB COnpOBOAHTeJlbHOfl Tapbl, COXpaHHB flJIHlly BblBO.'ia He M e n e e 5 m m . fla f i K a b m b o a o b « o n y c K ae T C a H a p a c c T o a m m He Menee 1,5 m m , H3THÔ — n e MeHee I m m o t Kpaa n p n ô o p a c pajw y co M 3 aK p y rjieH itH He M CHee 0 ,5 m m . I l p i i n a t a e a o a j k h m o s .iti. n p tiH H T b i

M epbi, H C K jiioM aw m ne H a rp e B n p u ß o p o B Bbiuie 85 C.

It is re c o m m e n d e d to ta k e th e tr a n s is to r o u t o f th e sh ip p in g c o n ta in e r w ith f o rc e p s b y th e fa c e fre e o f lead s, h a v in g first d is c o n ­ n e c te d w ith f o rc e p s th e tr a n s is to r le a d s f ro m th e c o n ta in e r leads, a n d le ft th e lead le n g th e q u a l to a t least 5 m m . T h e le a d s m a y be s o ld e re d a t a d is ta n c e o f n o t less th a n 1.5 m m a n d b e n t a t a d ista n c e o f a t least 1 m m f ro m th e tr a n s is to r e d g e , th e b e n d in g r a d iu s being n o t less th a n 0 .5 m m . I n s o ld e rin g , ta k e m e a s u re s to p re v e n t the t r a n s is to r fro m h e a tin g a b o v e 85 "C.