BCP49

(1)

• For general AF applications

• High collector current

• High current gain

•Pb-free (RoHS compliant) package¹⁾

• Qualified according AEC Q101

1 2 4 3

EHA00009 B(1)

E(3)

C(2,4)

Type Marking Pin Configuration Package

BCP49 BCP 49 1 = B 2 = C 3 = E 4 = C SOT223

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage V_CEO 60 V

Collector-base voltage V_CBO 80

Emitter-base voltage V_EBO 10

DC collector current I_C 500 mA

Peak collector current I_CM 800 mA

Base current I_B 100

Peak base current I_BM 200

Total power dissipation, T_S = 124 °C P_tot 1.5 W

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Junction - soldering point²⁾ R_thJS ≤17 K/W

1Pb-containing package may be available upon special request

2For calculation of R_thJA please refer to Application Note Thermal Resistance

(2)

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0

V_(BR)CEO 60 - - V

Collector-base breakdown voltage I_C = 100 µA, I_E = 0

V_(BR)CBO 80 - -

Emitter-base breakdown voltage I_E = 10 µA, I_C = 0

V_(BR)EBO 10 - -

Collector cutoff current V_CB = 60 V, I_E = 0

I_CBO - - 100 nA

Collector cutoff current

V_CB = 60 V, I_E = 0 , T_A = 150 °C

I_CBO - - 10 µA

Emitter cutoff current V_EB = 5 V, I_C = 0

I_EBO - - 100 nA

DC current gain 1) I_C = 100 µA, V_CE = 1 V

h_FE 2000 - - -

DC current gain 1) I_C = 10 mA, V_CE = 5 V

h_FE 4000 - -

h_FE 10000 - -

h_FE 2000 - -

1) Pulse test: t _≤ 300_µs, D = 2%

(3)

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

min. typ. max.

DC Characteristics

Collector-emitter saturation voltage1) I_C = 100 mA, I_B = 0.1 mA

V_CEsat - - 1 V

Base-emitter saturation voltage 1) I_C = 100 mA, I_B = 0.1 mA

V_BEsat - - 1.5

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 5 V, f = 100 MHz

f_T - 200 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 6.5 - pF

1) Pulse test: t _≤ 300_µs, D = 2%

(4)

Collector cutoff current I_CBO = f (T_A) V_CB = V_CEmax

10 0

EHP00251 BCP 29/49

TA

150

0

104

Ι_CBOnA

50 100

101

102

103

˚C max

typ

Total power dissipation P_tot = f(T_S)

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰ T_S

0 150 300 450 600 750 900 1050 1200 1350

mW

1650

Ptot

Transition frequency f_T = f (I_C) V_CE = 5V

10

EHP00252 BCP 29/49

0 3

10 mA 101

103

5

10¹ 10²

10² fT

MHz

Permissible pulse load P_totmax / P_totDC= f (t_p)

10

EHP00253 BCP 29/49

-6

100

5

D = 5

10¹ 5

10² 103

10^-5 10^-4 10^-3 10^-2 s 10⁰ 0

0.005 0.01 0.02 0.05 0.1 0.2 0.5

tot max

Ptot_DC

P _t

p

=

D T

t_p

T

(5)

DC current gain h_FE = f (I_C) V_CE = 5V

10

EHP00255 BCP 29/49

-1 3

10 mA 103

106

5 5

10⁰ 10¹ 10⁴

C

hFE

Ι 102

105

˚C 125 5

25 ˚C

-55 ˚C

Collector-emitter saturation voltage I_C = f (V_CEsat), h_FE = 1000

10 0

EHP00256 BCP 29/49

CEsat

V

1.5

0

103

Ι_C ^mA

0.5 1.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Base-emitter saturation voltage I_C = f (V_BEsat), h_FE = 1000

10 0

EHP00258 BCP 29/49

3.0

0

103

ΙC

mA

1.0 2.0

101

102

˚C

V 5

5

150 25 ˚C -50 ˚C

Collector-base capacitance C_cb=ƒ(V_CB) Emitter-base capacitance C_eb=ƒ(V_EB)

0 4 8 12 16 20 24 28 V 34

0 20 40 60 80 100 120 pF 160

CCB0(CEB0)

CCB CEB

(6)

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

P a c k i n g

Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel

2005, 24 CW Date code (YYWW)

BCP52-16 Type code

Pin 1

1 2 3

3

4

±0.1

±0.04

0.5 MIN.

0.28 0.1 MAX.

15˚ MAX.

6.5±0.2

A

4.6 0.7±0.1 2.3

0.25M A

1.6±0.1

7±0.3

B 0.25M

±0.23.5 B

3.5

1.44.81.4

1.1 1.2

8 0.3 MAX.

6.8

7.55 12

1.75 Manufacturer

0...10˚

(7)

Published by

Infineon Technologies AG 81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

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life-support device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons

may be endangered.