BC856SERIES

(1)

PNP Silicon AF Transistor

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 hz and 15 kHz

• Complementary types:

BC846...-BC850... (NPN)

• Pb-free (RoHS compliant) package¹⁾

• Qualified according AEC Q101

1Pb-containing package may be available upon special request

(2)

Type Marking Pin Configuration Package BC856A

BC856B BC856BW BC857A BC857B BC857BF BC857BL3 BC857BW BC857C BC857CW BC858A BC858B BC858BL3 BC858BW BC858C BC858CW BC859B BC859C BC860B BC860BW BC860CW

3As 3Bs 3Bs 3Es 3Fs 3Fs 3F 3Fs 3Gs 3Gs 3Js 3Ks 3K 3Ks 3Ls 3Ls 4Bs 4Cs 4Fs 4Fs 4Gs

1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C

- - - - - - - - - - - - - - - - - - - - -

SOT23 SOT23 SOT323 SOT23 SOT23 TSFP-3 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 SOT23 SOT323 SOT323

(3)

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage BC856...

BC857..., BC860...

BC858..., BC859...

V_CEO

65 45 30

V

Collector-base voltage BC856...

BC857..., BC860...

BC858..., BC859...

V_CBO

80 50 30

Emitter-base voltage V_EBO 5

Collector current I_C 100 mA

Peak collector current I_CM 200

Total power dissipation T_S ≤ 71 °C, BC856-BC860

T_S ≤ 128 °C, BC857BF-BC858BF T_S ≤ 135 °C, BC857BL3, BC860BL3 T_S ≤ 124 °C, BC856W-BC860W

P_tot

330 250 250 250

mW

Junction temperature T_j 150 °C

Storage temperature T_stg -65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point¹⁾ BC856-BC860

BC857BF-BC858BF BC857BL3, BC858BL3 BC856W-BC860W

R_thJS

≤ 240

≤ 90

≤ 60

≤ 105

K/W

1For calculation of R_thJAplease refer to Application Note Thermal Resistance

(4)

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 10 mA, I_B = 0 , BC856...

I_C = 10 mA, I_B = 0 , BC857..., BC860...

I_C = 10 mA, I_B = 0 , BC858..., BC859...

V_(BR)CEO 65 45 30

- - -

V

Collector-base breakdown voltage I_C = 10 µA, I_E = 0 , BC856...

I_C = 10 µA, I_E = 0 , BC857..., BC860...

I_C = 10 µA, I_E = 0 , BC858..., BC859...

V_(BR)CBO 80 50 30

- - -

- - - Emitter-base breakdown voltage

I_E = 1 µA, I_C = 0

V_(BR)EBO 5 - -

Collector-base cutoff current V_CB = 45 V, I_E = 0

V_CB = 30 V, I_E = 0 , T_A = 150 °C

I_CBO

- -

0.015 5

µA

DC current gain¹⁾

I_C = 10 µA, V_CE = 5 V, h_FE-grp.A I_C = 10 µA, V_CE = 5 V, h_FE-grp.B I_C = 10 µA, V_CE = 5 V, h_FE-grp.C I_C = 2 mA, V_CE = 5 V, h_FE-grp.A I_C = 2 mA, V_CE = 5 V, h_FE-grp.B I_C = 2 mA, V_CE = 5 V, h_FE-grp.C

h_FE

- - - 125 220 420

140 250 480 180 290 520

- - - 250 475 800

-

Collector-emitter saturation voltage¹⁾ I_C = 10 mA, I_B = 0.5 mA

I_C = 100 mA, I_B = 5 mA

V_CEsat

- -

75 250

300 650

mV

Base emitter saturation voltage¹⁾ I_C = 10 mA, I_B = 0.5 mA

I_C = 100 mA, I_B = 0.5 mA

V_BEsat

- -

700 850

- - Base-emitter voltage¹⁾

I_C = 2 mA, V_CE = 5 V I_C = 10 mA, V_CE = 5 V

V_BE(ON)

600 -

650 -

750 820

1Pulse test: t < 300µs; D < 2%

(5)

Electrical Characteristics at T_A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics Transition frequency

I_C = 20 mA, V_CE = 5 V, f = 100 MHz

f_T - 250 - MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb - 1.5 - pF

Emitter-base capacitance V_EB = 0.5 V, f = 1 MHz

C_eb - 8 -

Short-circuit input impedance

I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C

h_11e

- - -

2.7 4.5 8.7

- - -

kΩ

Open-circuit reverse voltage transf. ratio I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C

h_12e

- - -

1.5 2 3

- - -

10^-4

Short-circuit forward current transf. ratio I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C

h_21e

- - -

200 330 600

- - -

-

Open-circuit output admittance

I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C

h_22e

- - -

18 30 60

- - -

µS

Noise figure

I

_C = 0.2 mA,

V

_CE = 5 V, f = 1 kHz,

D

f

= 200

Hz, R_S = 2 kΩ, BC859, BC850

F

-

1 4 dB

Equivalent noise voltage

I_C = 200 mA, V_CE = 5 V, R

S

^{= 2 kΩ,}

f = 10...50 Hz, BC860

V_n - - 0.11 µV

(6)

DC current gain h_FE = ƒ(I_C) V_CE = 1 V

10 10 10 10

EHP00382

h

-2 -1 1 mA 2

FE

103

10²

100

5 5

10¹

100

5

5 5 5

100

25 -50

ΙC

C C

C

Collector-emitter saturation voltage I_C = ƒ(V_CEsat), h_FE = 20

10 0

EHP00380

V_CEsat 10

mA 10

10

2

1

0

-1

5

V

0.3 0.5

100 25 -50

0.1 0.2 0.4

ΙC

C C C

Base-emitter saturation voltage I_C = ƒ(V_BEsat), h_FE = 20

10 0

EHP00379

BEsat

V

0.6 V 1.2

-1

10⁰ 10¹ 102

5 5 Ι_C ^mA

0.2 0.4 0.8

C 25

C 100 C -50C

Collector cutoff current I_CBO = ƒ(T_A) V_CBO = 30 V

10 0 50 100 150

EHP00381

T_A 5

10 10 nA 10 ΙCB0

5 5

5 10

10

4

3

2

1

0

-1

max

typ

C

(7)

Transition frequency f_T = ƒ(I_C) V_CE = 5 V

10 10 10 10

EHP00378

f

mA MHz

-1 5 0 1 2

T

103

10²

101

5 5

5

ΙC

Collector-base capacitance C_cb=ƒ(V_CB) Emitter-base capacitance C_eb=ƒ(V_EB)

0 4 8 12 16 V 22

V_CB(V_EB

0 1 2 3 4 5 6 7 8 9 10 pF

12

CCB(CEB)

CCB CEB

Total power dissipation P_tot = ƒ(T_S) BC856-BC860

0 15 30 45 60 75 90 105 120 °C ¹⁵⁰

0 30 60 90 120 150 180 210 240 270 300

mW

360

Ptot

Total power dissipation P_tot = ƒ(T_S) BC857BF, BC858BF

0 15 30 45 60 75 90 105 120 °C 150 0

25 50 75 100 125 150 175 200 225 250 mW

300

Ptot

(8)

Total power dissipation P_tot = ƒ(T_S) BC857BL3, BC858BL3

0 15 30 45 60 75 90 105 120 °C 150

T_S

0 25 50 75 100 125 150 175 200 225 250 mW

300

Ptot

Total power dissipation P_tot = ƒ(T_S) BC856W-BC860W

0 15 30 45 60 75 90 105 120 °C 150

T_S

0 25 50 75 100 125 150 175 200 225 250 mW

300

Ptot

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p) BC856/W-BC860/W

10

EHP00377

-6

100

5

D = 5

10¹ 5

10² 103

10^-5 10^-4 10^-3 10^-2 s 10⁰ 0

0.005 0.01 0.02 0.05 0.1 0.2 0.5 t_p

=

D T

t_p

T

tot max

Ptot_DC

P

tp

Permissible Puls Load R_thJS = ƒ (t_p) BC857BF, BC858BF

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 -1

10 0

10 1

10 2

K/W

RthJS D=0.5

0.2 0.1 0.05 0.02 0.01 0.005 0

(9)

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p) BC857BF, BC858BF

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

t_p

10 0

10 1

10 2

10 3

Ptotmax/PtotDC

D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Puls Load R_thJS = ƒ (t_p) BC857BL3, BC858BL3

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰

tp

10 -1

10 0

10 1

10 2

RthJS

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Permissible Pulse Load P_totmax/P_totDC = ƒ(t_p) BC857BL3, BC858BL3

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s 10 ⁰ 10 0

10 1

10 2

10 3

Ptotmax/ PtotDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

(10)

P a c k a g e O u t l i n e

F o o t P r i n t

M a r k i n g L a y o u t ( E x a m p l e )

S t a n d a r d P a c k i n g

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel

EH s

BCW66 Type code Pin 1

0.8

0.90.91.3

0.8 1.2 0.25^M B C

1.9

-0.05

0.4+0.1

2.9±0.1

0.95 C B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3±0.1

10˚ MAX.

M

2.4±0.15

1±0.1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

1 2

3

3.15 4

2.652.13

0.9

8

0.2

Pin 1 1.15

Manufacturer 2005, June Date code (YM)

(11)

F o o t P r i n t

1.25±0.1

0.1 MAX.

2.1±0.1

0.15^+0.1_-0.05 0.3^+0.1

0.9±0.1

1 2

3 A

2±0.2

-0.05

0.65 0.65

M

3x 0.1

0.1 MIN.

0.1

0.2M A

4 0.2

2.15

8

2.3

Pin 1

2005, June Date code (YM)

BCR108W Type code 0.6

0.8 1.6

0.65

Manufacturer

(12)

4

F o o t P r i n t

±0.05

0.2

3

±0.05

1.2

1 2

10˚ MAX. ±0.050.8

1.2±0.05

±0.04

0.55

±0.050.2

±0.05

0.15

±0.05

0.2 0.4±0.05

0.4±0.05

0.4

0.45 1.05

0.4 0.4

BCR847BF Type code Pin 1

0.2

1.35 0.3

0.7

1.2 1.5 8

Pin 1

Manufacturer

(13)

2 3 1

0.4^+0.1

BFR193L3 Type code

Pin 1 marking Laser marking

4

1.16

0.5

8

Reel ø180 mm = 15.000 Pieces/Reel

For board assembly information please refer to Infineon website "Packages"

F o o t P r i n t

Stencil apertures Copper Solder mask

0.275

0.2

0.315

0.945

0.45

0.17

0.355

0.2

0.35

0.225

1

0.6

0.225 0.15

0.35 0.3

R0.1 2 1

±0.05

0.35

±0.035

2 x 0.15 ¹⁾

Top view Bottom view

1) Dimension applies to plated terminal

±0.035

0.5 ¹⁾

±0.05

0.6

3

±0.050.65 ±0.0352x0.251) ±0.0350.251) 1±0.05

Pin 1 marking

0.05 MAX.

(14)

Edition 2006-02-01 Published by

Infineon Technologies AG 81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

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life-support device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons

may be endangered.