Tranzistory. Čast' 4; Energooszczędne tranzystory o wysokiej częstotliwości - Digital Library of the Silesian University of Technology

TPAH3MCT0Pbl (lOJlEBblE

MAJIOW MOIUHOCTH BblCOKOM HACTOTbl

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

i p R p i

■Big

■ ■ I

HÏ13015

T P A H 3 H C T 0 P b I n O J I E B b lE MAJIOft MOIUHOCTH TPA H3H CTO PbI IlO J lE B b lE MAJIOfï MOI1JHOCTH BblCOKOK MACTOTbl BblCOKOH MACTOTbl

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS TRANSISTORS

mSBIBMBSBÄiOÄiiSMiSSW!«

Kn3015

O E IU H E C B E /IE H H ÎI G E N E R A L

KpeMHueBbie m tanapiibie riojieBbie M OFl-Tpan3ncTopbi c HHAynnpoBamibiM KanaJioM p -m n a h c n30jrnp0BannbiM 3aTBopoM K n 3 0 I B ripc;inaTnaMCHU a.na p a6 oTbi b cxe.Max ycn /im e.ncii npo- MOKyTOHHOli H HH3KOÜ MaCTOTbl, B 3JieKTpOMCTpilHeCKVIX flCTCKTO- pax h npeo6pa30B aT eniix, b BHCOKOHacTOTHbix ycnmiTejiHx, MHoro- xaiiaiibHbix KOMMyTaTopax h npepbmaTCJisix.

Otj)opMJieHiie — b MeTaJi.THMecKOM repMCTHMHOM Kopnyce c niÔKHMH BblBOflaMH.

yCTOiiHHBOCTb K BHCUIHHM BOSfleîiCTBHHM:

BHÖpauHfl b A n a rm o n e MacTOT o t 1 ,uo 2 0 0 0 Tu c ycKopemieM flo 15 g:

MHoroKpaTHbie y/tapw c ycKopcHncM .no 150 g;

jiHHciiiibie Harpy3KH c ycKopemieM ,ao 150 g ± 2 0 ;

H H T ep B aJi T e w n e p a T y p O K p y jK a io m e ft cpe^bi o t —40 a o

+ 70 C.

M a cca Tpam wcTopa hc 6 o jiee 0 ,7 r.

S ilic o n planar field-effcct in d uced p -chan n el in sulated-gate m cta l-o x id e-scm ico n d u cto r transistors K FI301E are design ed for o p era tio n in IF and L F am plifiers circu its, in electrom etering d etectors and converters, in h igh -freq u en cy am plifiers, m u lti-ch an n el sw itch -b o a rd s an d interrupters.

M o u n tin g — in a m eta l sealed ca se w ith flexible leads.

O C H O B H b lE M H H b l E B A S IC S P E C IF IC A T IO N S 3:ieK i pnMccKne napaMCipi.i E lectrical Param eters

riapaMcrpw

P aram eters

06o3naMeHMH

Designations

3naMeimH V alue

PeTKHMM H3MCPCHI1H jVleasuring conditions

HC MCHCC, m in

ne Go/tcc, max

Ups, U,1s.

V

K pyTii3na xapaKTcpHCTHKii npHMoS nepenaMii, mA /B

F o rw a rd tra n sfer tr a n sc o n d u c ta n c e , m A /V rio.'iiiaii B bixoflna» npoBOflHMoCTb, m kCm O p en -c ircu it o u tp u t a d m itta n c e , u S Ilo p o r o B o e 3HaneHHe TOKa cxoK a, mkA T h r e sh o ld v a lu e o f d rain cu rren t, ¡¿A

H anajibubiil t o k CTOxa, m kA D ra in c u t-o ff cu rren t, t^A T o k yTeHKH 3aTB opa, hA G a te lea k a g e cu rren t, n A EMKOCTb, n<l>:

C a p a c ity , p F : BxoaHan input Bbixoflnaa o u tp u t npoxoflH aa transfer

Sfs

Y.,„,

I

n o n

10

1 • 10 '

c,*

1,5

1,2

0,2

2 ,6 I

150

0 ,5

0,3

3.5

3.5

1

15

15

- 6 ,5 ,

•6 ,5 * 15

-3 0 *

-1 5

-15

-15

Id. nlA

r, Hz

50— 1500

5 0 — 1500

10:

I 0 7

10'

llpe.ie.ibiibie 3nawennji /tonyeriiM bix peaaiMOB 3KcnjiyaTamin Maximum V alues o f A llow able O perating Conditions

(tamb — —4 0 . . . + 7 0 C )

HanpsjKeHne 3 aT B 0p-M C T 0K U 08 maI, B 30 G ate-to-source v o lta g e, U aa mlll, V

HanpjDKeime c t o k-h c t o kU U3 imx, B D rain-to-source vo lta g e, U Da mai* V

20

15

200

R esista n ce to extern al effects:

v ib ra tio n w ith in freq u en cy range from I to 2000 H z at an a cceler a tio n up to 15 g;

m ultip le im p a c ts at an a ccelera tio n up to 150 g;

linear acceler a tio n u p to 150 g ± 2 0 ;

am b ien t tem perature range — from - 4 0 to + 7 0 ° C . T ransistor m a ss — 0 .7 g, m ax.

0 lamb = —4 0 ...+ 25 °C.

B nHTCpua.-ic TCM neparyp ot 25 ;io 70 °C aiia ic m tc moiuhocth pacc4M i!jnacrcH no 4>opMyjie:

ta m b ~ ~ 2 5

Pd .1 = 2 0 0 — 1,5

1 °C/mV [mWJ.

Tokctok3, ID mA D rain current, ID m A

M oiiiH ocib paccciiBaiiHsi P d mBt D issip ated p ow er, P d raW

= - 4 0 , . . + 2 5 ° C . . _

W ith in te m p e ra tu re ran g e fro m 25 to 70 DC , th e p o w er is ca lcu la ted by f o rm u la : P d max - 200 - 1 . 5 - 5 2 ^ 2 [mW J.

B x o iin a s i x a p a x x e p H C T H K a npn U „ = 25 + 10 X

Input ch aracteristics at tamb =

= 2 5 ± 10 °C

BxOflHbie X apaK TepH C TH K H npil p a3 JIH 4 H O ÎÎ TeMnepaType oKpyJKatoineîi cpeflbi

In p u t ch aracteristics at variou s am b ien t tem peratures

■4 Ha'ia.ni.m.ie y n a c T K H b x o a h m x xapaKTeptiCTMK npn p a 3 n H 4 H b lX ItanpsDKCHHHX 3aTBOp-HCTOK

Initial se c tio n s o f in p u t ch aracteristics a t variou s gate-to- so u rc e v oltages

BxoflHbie x a p a K T e p n c T H K H n p n p a 3 - JlHHHblX HanpH/KCHHilX 3aTBOp-HC- TOK

In p u t characteristics at various g a te-to -so u rce v oltages

! / t n s ,m A W 3 a B H C H M O C T b K pyTH 3H bI X apaK TepH C TH K H OT H aiipil/K C H H il

CTOK-HCTOK

T r a n sco n d u cta n ce versus d ra in -to -so u rce v o lta g e

3 a B H C H M O C T b K pyT H 3H bI X apaK TepH C TH K H OT T O K a CTOK3

T r a n sco n d u cta n ce versus d rain current 2 ‘t 6 Ö 1012 f t 1618 20 22IH lS lmA

91

3 a H M C H M 0 C T b K p y T H 3 H U X a p a K T C p itC T IlK H o t T e M i i e p a x y p i . i O K p y a c a i o m e i i c p e f l b i T ran scon d u ctan ce versus a m b ie n t tem ­ perature

m 600 500 WO 300 200 100

y22c,/u-S

15V /

/ /

✓

"_

£ - - —

6 8 10 12 f t 16 18 2 0 % , V

3 a B H C H M O C T b nOJtHOii BblXOAHOli n p o a o - flHMOCTH OT Hanpfl'vKCHHH CTOK-HCTOK O p en -circu it o u tp u t a d m itta n c e versus d rain -to-sou rce v o lta g e

0 2 ‘i 6 8 10 12 n 16 18 20 22 24 Iq.wA

3 a B H C H M O C T b riOJIHOii BblXOflHOfi npOBO- AHMOCTII OT T O K a CTOKB

O p en -circu it o u tp u t a d m ittan ce versus drain current

100

50 y ¡ 2 s ,p s

HB = 1SV 3 n -5 m /

tam6,°C

0 SO 100

3 aB M C H M O C T b nOJIHOii BbtXOflHOií n p o - BOflHMOCTH OT T C M I I C p a T y p b l OKpy)Ka- lo iu eii cpcflbi

O p en -circu it o u tp u t ad m ittance versus a m b ie n t tem perature

U(BR)Ds/U(8R)Bs(h‘ 0)

0 5 1015 20 2 5 5 0 3 5 Is ,m A

3 a B H C H M O C T b OTHOCHTeJIbHOH BejlH- MHHbi n p o 6 iiBHoro HanpsaceHH» c to k - HCTOK OT T O K a CTOKa

R e la tiv e value o f d ra in -to -so u rce break ­ d o w n v o lta g e versus d rain current

I m s,

100'

10°

I0'1

y ... uo /

y

W

V

\\L.

/ /

3 a B H C H M O C T b K03(|)(t)UUUCKTa LUyMa OT c o n p o T H B .n c m i f l b n e m i 3 a T B 0 p - i iC T 0 K N o is e fa cto r versus resistan ce in gate- sou rce circuit

120 110 100 SO

80

10

U<8l>II)5/VtBR)D s(tam 5xW C

0 2 0 HO 6080100120110 t ams ;C

3 a B H C H M 0 C T b O T H O C H T C JIbH O ii B eJlH H H U b l n p o 6 HBHoro narrpHwenHH c to k -h c to k o t TeMnepaTypbi oK pyw aioineii c p e flti R e la tiv e valu e o f d ra in -to -so u rce b reak ­ d o w n v o lta g e versus a m b ie n t tem perature

10 50 WO tum}, °C

3 a B U C H M O C T b H a n a j i b H o r o T O K a C T O K a o t

TeMnepaTypw OKpyitcaioweił cpéflH D rain cu t-o ff current versus am b ien t tem perature

F,dB

10 MQ

R.t*IOOKi)

w m q f, KHz 0 10 20 30 hO 50 60 70 80 90

3 aB H C H M O C T M K03<}xi>H U H eH Ta r n y M a B 3a- BUCHMOCTII o r H a C T O T b t npil pa3J!HHIIOM COnpOTHBneHHlI B u em i 3aTBOp-HCTOK N o is e factor versus freq u en cy at various resistan ce in gate-sou rce circuit

3 a B H C H M O C T b n o p o r o B o r o Hanps¡*einiH o t TeMnepaTypw o K p y a c a i o m e f t c p e a w T h resh old v o lta g e versus a m b ie n t tem pera­

ture

T P A H 3 H C T 0 P b I n O J I E B b lE MAJIOW MOUJHOCTH

B b i c o K o w M A C T O T b i u n o n i c :

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY 11 I I U U I D TRANSISTORS

YKA3AHMJJ n o IIP M M E H E M M IO II 3 K C I I J iy A T A U I lH IN S T R U C T IO N S O N U S E

naiÍKy BbiBOflOB íionyCK'acrcíi upoirjBOAH i b n a paccTOflHHH hc ÔJiHwe

5

m m o t Kopnyca rpainnCTOpa. T cM n ep a T y p a naftKH He flojw u a np cB biu iaT b

260

°C . M m in M a ;ib iio e p a c c r o n m ie MCCTa Hi ru

6

a BbiBOita o t K op n yca T p a n

3

MCTopa

3

mm.

T h e leads m ay be sold ered a t a d istan ce o f at least 5 m m from the tran sistor case. T h e sold erin g tem perature sh ou ld n o t exceed 260 °C .

T h e m in im u m d istan ce b etw een the p o in t o f b en d in g and the transistor ca se is 3 m m .

T P A H 3 H C T 0 P b I IIO J lE B b lE M A JI0ÏÏ MOIUHOCTH

BblCOKOfl MACTOTbl M Ü ^ Î l ^ A K m f l 9 R FIELD-EFFECT LOW-POWER HIGH-FREQUENCY n l l O U £ H “ n l l O U £ D TRANSISTORS

WHKÊÊKÊÊÊÊÊtÊÊÊÊÊIÊlÊBMÊÊÊÊÊtBtIBStÊÊlÊÊttÊKtÊÊÊÊIKBÊÊIÊÊÊÊÊÊÊKÊÊÊttÊÊÊÊÊHÊtÊÊÊÊÊÊtÊÊÊtÊÊÊlÊKIÊKItÊtKlÊBBtKÊÊKItBÊÊM

O B llfllE C B E /lE H H fl G E N E R A L

KpeMHHeBbte M a /io M o m m .ic n ojicB b ie rparaHCTopbi K

11302

A — KrT

302

B c KanaJioM n-Tirna u flH(J)<t)y

3

H

0

HHHM

3

aTBopoM npeA - HasHancHbi a.HH p a60Tbi b cx eM a x y c iu ie m iíi h nepeKJitoHennsi p a ;in o

3

;ieK TponuoH arrnapaT ypbi.

0 (J > o p M J ie iiu e — b M eTaJiJrnH ecK O M repM C T H 4H O M K o p n y c e c Th6kHMH BblBOflaMH.

H H T e p B a ji T C M n e p a T y p O K p y w a i o m e i i cp e ;n > i o r —60 n o + 100 °C.

M a c c a T p a H 3 H c r o p a H e 6 o j i e e 1,5 r .

S ilico n lo w -p o w er field-effect n -ch an n el d iffused-gate transis­

tors K IT302A— K .n 302B are design ed fo r o p era tio n in a m plifier and sw itch in g circu its o f rad ioelectron ic eq u ip m en t.

M ou n tin g — in a m eta l sealed case w ith flexible leads.

A m b ie n t tem perature range - from —60 to + 1 0 0 °C.

T ransistor m ass — 1.5 g, m ax.

O C H O B H M E f lA H H b lE BASIC S P E C IF IC A T IO N S 3.ieKTpiiHecKiie napanierpbi Electrical Param eters

riapaMCTpw O o o 3 n a-

MCHHH

3HaMCHHH V alue

PCTKHMM M easu rin g

H3MepeHHfl co n d itio n s

P aram eters D esig n a­

tio n s

u e MCHCC, m in

u e 6 ojiee, m ax

Ud s, V

^G S . . j*UG»’

V

m AI D.

r, H z

KpyTH3na x a p a K T e p H C T H K H n p s iM O ii n e p c iia Mii, m A /B : Forw ard tra n sfer tra n sc o n d u c ta n c e , n iA /V :

ëms

K I1302A 5 I 15 I ' 7 0 5 0 — 1500

K I1302B 7 ; 17 1 7 0 50— 1500

L

93

T P A H 3 M C T 0 P b I n O J I E B b lE M AJlOft MOIIIHOCTH K n ^ f l 9 A K m n 9 R BblCOKOfl HACTOTbl

m i O U £ H - m i O U £ D f i e l d - e f f e c t l o w - p o w e r h i g h - f r e q u e n c y

TRANSISTORS

n a p a M e r p u 0 6 o 3 iia -

MCHMN

3HaHCHHa V alue

PeacHMW napaMC rpon M easu rin g co n d itio n s

P aram eters D esig n a­

tio n s

n e MeHce, m in

we Gojiee, m ax

U i w V

U GS.

UfiS.

v 1

lu.

mA

r.

Hz

H aia.'ibHbiii tok CTOKa, mA : D ra in c u t-o ff cu rren t, m A :

K I1302A K FI302B K H 3 0 2 B

^DSS

3 18 33

24 43

7 7 10

0 0 0

—

—

Tok 3aTBopa, A •GSS | I 0 - ‘»| 1 •i 0 ~ s — 10 — —

G a te cu rren t, A

06paTH bifi tok p-n n ep ex o fla cTOK-3aTBop, A R ev er se current o f d r a in -to -g a te p-n ju n c tio n , A HanpflMceiiHe otcchkh, B:

C u t-o ff cu rren t, V :

*GI>0

U q s (off)

— 1 • i o - 5 — 20* — —

K I1302A 1 5 7 — 1 0 - =

KT1302E 2 7 7 — 1 0 --

K n 3 0 2 B 3 10 5 — I 0 - 2 ----

B x o /n ia a eMKOCTb, n<l>:

Input c a p a c ita n c e , p F : K I1302A

C „ s

6 20 10 3 107

K I1302E 6 20 10 — 18 10:

K FI302B 6 20 10 — 33 10'

B b ix o a n a a eMKOCTb, n<l>:

O u tp u t c a p a c ita n c e , p F :

css8

K I1302A 3 10 10 — 3 10:

K n 3 0 2 B 3 10 10 — 18 10:

K I1302B 3 10 10 — 33 107

n p o x o flH a s eMKOCTb, n<J>:

| T r a n sfe r ca p a c ita n c e , p F :

C l 28

KT1302A K FI302B

2 2

8 8

10

10 __

3 18

I 0 7 107

K I1302B 2 8 10 — 33 107

ConpoTHBjicHne KaHaJia, Om: C h a n n el resista n ce, O h m :

rDS (Oft)

K FI302B 35 150 0,2 0 — —

K FI302B 35 100 0,2 0 — —

i Ko3t|i<j)HUHeHT tiiyMa, nB:

N o is e fa cto r , d B :

F

1 k H z

K H 3 0 2 A i 0,6 ! ^{: 3 ] 8 0 I*}

(R 1MSÎ)

j BpeM « BKJiioHeHHH, n c 1 3 I I 4 I ^{— —} — ^—

On tim e, ps

BpeMJi BbiKJiioMeiiHH, nc t„ri 3 : 5 ; — — —

O ff tim e , ps I I .. J

! Ipentvii.iu.ic snaHemm aonycTHMbix peiKBMOB jt<cnnyaTaunH M axim um V alu es o f A llow able O perating Conditions

(tamb = - 6 0 . . . + 100 °C )

M o m n o crb pacceHHua P 03 a,»*1*, mBt 300 D issip a ted p ow er, Pos m W

Hanpsi'A'CHiie HCTOK-3aTBop U GS B 10

S o u rce-to -g a te vo lta g e, U c3 m„ , V

HanpsiKeHHe croK-3aTBop U GD m„ , B 20

° Umb = — 60. . . + 2 0 °C.

n p n TCMnepaType cB u m e 20 SC HaMÖOJnauaH MoiUHOCTb onpeaeJiaeT ca n o iJjopMyjie:

Pd s max = 300 — 2 (taml, — 20) [m W j, 94

D ra in -to -g a te v o lta g e, U 0D ,„iUC, V T o k c T O K a I DSS, m A

D r a in current, I„3S, m A To k 3 a T B o p a l G, mA G a te current, IG, m A

l a m b — w . . . i - i u v ..

A t a te m p e ra tu re o f a b o v e 20 °C , th e m a x im u m p o w er is d eterm in ed by form ula;

P p S m ax ” 3 0 0 — 2 (t s j f i b — 2 0 ) [m \V J.

Tnrioßbie BbixoflHbte x a p a K T e p u c T H K H

Standard o u tp u t characteristics

h s s r . , mA

Un s = 8 V Uq s - 0

- -

----

‘ —— 20 10 BO 80 100 120 HO 160

3 a B H C H M O C T b n a H Ô O J i b u i e r o H a > ia .J ib H o ro TOKa CTOKa OT TeMnepaTypw oKpyjKaiouiefi cpeflbi

M a x im u m drain c u t-o ff current versus am bient tem perature

6

‘i 1 0 20 15 10 5

h s s , m ^

A/1302A V o

/ — "0,5

...

1 0

0,1 0.8 1,1 1,6 2,0 u „ ,y

h s s m o i b

/ ! ) / - 0

/

h i ^-16

/

_■-2,?—

U£2,5V

„ 0.1 0,6 Ofi 1,0 1

,2

^uBSy

¡OSS’'” a________KH30 28 /

y

^-1,0_.-1,5

/

1 ^ °

10~7 Içss.mA

r - '

> ' { cs=m

ta m l, °C

3 a B H C H M O C T b K pyTH 3H bl X a p a K T e p H C T H K H o r T e M n e p a T y p b i O K p y a c a r o m e ii c p e ;n . i T ran scon d u ctan ce versus am b ien t tem ­ perature

o 0,1 0 ,6 o,b 1,0 i2 uBSy

H a M a jT b H b te y y a c T K H B b i x o a i i b i x x a p a K - T C p ilC T H K

Initial se ctio n s o f o u tp u t characteristics

72 10 8 6 4 2

9fS > y

* / / /,

/

Vo 5

/ s

6 ud s y

3aBHCHM0CTl. KpyTinilbt XapaKTepHCTHKH OT n a n p a j K e i i H H c t o k-h c t o k

T ran scon d u ctan ce versus d rain -to-sou rce voltage

20 10 60 60 100120110160 t am^ C

3 a B H C H M 0 C T b T O K a 3 3 T B o p a O T TeMnepa­

T y p b i O K p y jK a io m e f i c p e j i b i

G ate current versus a m b ie n t tem perature

0,9 Ofi 0,1 0,6 0,5 Ofi 0,3 0,2 0.1

SmsUprr.

1 J j

t y 1

I

/ / ,

/

/ A /

<

/ / OS'- SV

//

/ /r r

!

3 a B H C H M O C T b n O JIH O H B b lX O flH O H IipO B O IIH M O C T H O T T e M n e p a T y p w O K p y w a i o i n e r i c p e f l b i

O p en -circu it o u tp u t a d m itta n c e versus am b ien t tem perature

0 1 2 3 1 5 6 7 8 IjjssfîA

3aBM CH M OCTb O T H O C H T e jlb lIO ro HÜMCHCHHSI K p y T H 3 H b I X apaK T ep H C T H K H OT H a H a i l b H o r o T O K a CTO Ka

R elative variation o f tran scon d u ctance versus d rain c u t-o fî current

3aBIICHM0CTb riO JlH O ii B b lX O flH O ÎÎ n p o B O A H M O C T H O T n a n p n / K e m i s i CTOK-HCTOK

O pen-circuit o u tp u t a d m ittan ce ver­

sus d rain -to-sou rce voltage

0,9 0,8 0,7 0,6 0,5 0,1 0,3 0,2 0,1

‘DSS

b ss^G s‘ 0 ) M302A -KH302B s

\

\ \

UB5--8V V

■ÿ

\ v . Vs-_n\

\ s

\ N.

0 0,2 0,10,6 0,8 1,0 1,2 1,H VGi,V

3 a B M C H M O C T I> O T H O C H T e J Ib H O Ü B e A H H H K b l T O K a C T O K a O T H a l i p H ^ C H H H 3 a T B O p - H C T O K R ela tiv e value o f drain current versus g a te-to -so u rce voltage

95

Hn302A-Híl302B

T P A H 3 H C T 0 P b I n O J I E B b lE MAJlOft MOIIJHOCTH BblCOKOft qACTOTbl FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

ho 03 0,8 0,7 0,6 0,5

9m S Sms (Uss'QV)

1

7 - /

/ /

3 a B H C H M O C T b O T H O C llT C JIb H O rO H3 M e « e H H H K p y T H 3 H b I X âp H K T C p H C T H K H o r H a n p s iJ K e iiH H c t o k - i i c t o k

R ela tiv e variation o f tran scon d u ctance versus d rain -to-sou rce v o ltage

Y K A 3 A H H H TIO ItP M M E H E H M IO M 3 K C riJ iy A T A U ,M M I N S T R U C T IO N S O N U S E

riaiiKa BblBOitOB TpaH3MCTOpOB flOliyCKaCTCH Ha paCCTOHHHH He Menee 5 mmot x o p n y c a r p a tm ic r o p a .

n a i Í K - y npoirsB O iune b tc-jch u c 2— 3 c c nanpsDKCHHCM 6— 12 B , T e M n e p a T y p a Kopnyca npw s t o m He f l o j i w u a npeBbnuaTb 1 2 5 + 2 C.

flonycK aeTca h3Th6 bmbojiob na paccrosm uii He Menee 5 m mot Ko p n y ca . P a iw y c in r n o a He MeHee 1,5 m m.

r ip n BJiaîKHOCTH 98% h TeMnepaType flo 4 0 ’C , c itcjibio o6ec- ne^eHtia Toxa 3aTB0pa na ypoBHe He BMiue 10~ 8 A , p e komchíivctcm ncno.nb'îOBarb TpaH3HCTopi>i TOJibKO b cocTaBe repMCTH'iiipoBaHHoii a n n a p a r y p u hjih npn m ccthoR 3am «T e n p n 6 op a o t iíoi/ich ctb iísi B j i a r H .

T h e transistor leads m ay be sold ered at a d ista n ce o f at least 5 m m from the tran sistor case.

S o ld erin g last for 2— 3 s at a v o ltage o f 6 — 12 V , the transistor ease tem perature n o t ex cee d in g 1 2 5 ± 2 °C.

T h e leads m a y be b ent at a d ista n ce o f at least 5 m m from the ca se, the b en d in g radius b eing at least 1.5 m m .

T o en su re the gate current at a level o f n o t higher than 10*8 A at a h u m id ity o f 98 % and tem perature u p to 40 °C , it is recom m ended to u se the transistors o n ly in c o n ju n c tio n o f sealed eq u ip m en t o r at a lo ca l p ro tectio n o f transistor again st the effect o f m oisture.

T P A H 3 H C T 0 P b I IIO JIE B b lE MAJ10ÏÎ MOIIJHOCTH BblCOKOfl qA C TO Tbl

Hn303A-Hn303E FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

O B ll( H E C B E 4 E H I IH G E N E R A L

KpeMHHCBbte noneBbie nnanapHbie c KaHaJiOM n-Tiina u (j>y3HOHHbiM 3aTBOpoM TpaH3HCTopbi K11303A— KFI303B n p ea- Ha3Ha4enw una paôorb i:

K H 3 0 3 A — KP1303B — b MaJiouiyMmuHX ycujiHTejiflx b flua- na30He hh3khxh HH(¡¡paHH3!ínx HacroT, b ycum iT ejiax n o c r o a in io r o TOica;

K 11303A , K H 303E — b MaJiomyMiutwx ycHJiHTenax h cMecw- Tejtax b ;tnana30ue HacroT a.0 100 M F u ,a TaK>Kc b BHfleoyCHJiHTejiax;

K n 3 0 3 T — b ManomyMfliHHX ycn a iiT en sx u cMecnTejiax b fliiana30H e HacroT.no 100 M T n , a Taxace b 3apaaoHyBCTBHTeJibHbix npenycHjiHTeJiax b siAcpnoii cneKipocKornui.

Ô(J)opMJieHne — b MeTaJumnecKOM icpmcthhhom Koprryce c rHÔKHMH BblBOitaMH.

MirrepBan TeMriepaTyp oKpyjKatomefi c p e a u ot — 4 0 a o + 85 "C.

M acca TpaH3«eropa He 6 o n e e 0 ,5 r.

S ilic o n field-effect planar n -ch an n el d iffused-gate transistors K .n 3 0 3 A — KF1303B are d esign ed fo r o p era tio n :

K.11303A— K FI303B — in lo w -n o ise am plifiers w ith in low - and in fra-low freq u en cy range, in D C am plifiers;

KJI 303,rL KTI303E — in lo w -n o ise am plifiers a n d m ixers w ithin freq u en cy range up to 100 M H z , a s w ell a s in v id e o am plifiers;

K .ri3 0 3 r — in lo w -n o ise am plifiers and m ixers w ithin frequency range up to 100 M H z , a s w ell as in charge-sensitive v id e o amplifiers in n uclear sp ectro sco p y .

M o u n tin g — in a m eta l sealed c a se w ith flex ib le leads.

A m b ie n t tem perature range — from - 4 0 to + 8 5 °C . T ransistor m ass — 0 .5 g, m ax.

a a a j

TPAH3HCT0PbI n O J I E B b lE MAJIOñ M 0IH H 0CT H BblCOKOft qACTOTbl

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

HF1303A-Hn303E

O C H O B H b lE /J A H H b lE BASIC S P E C IF IC A T IO N S

O .IC K T p B H C C K H C i m p f l M C T p b l E lc c t r ic a l P a r a m e t e r s

napaMCTpbi

Parameters

06o3Ha-

HCHHH Value

PesiHMbl H3MCPCHHH Measuring conditions

Designa­

tions

HC MCHCC, min

ne 5oJiee, max

Ud s,

V Uoa.

V Id*

mA 1

f, Hz

KpyTM3na xapaKTepHCTHKH, mA /B : T ran sco n d u cta n ce, n iA /V ;

8 «

K I1303A , K I1303B 1 4 10 0 — 5 0 — 1500

KF1303B 2 5 10 0 — 5 0 — 1500

K n 3 0 3 r 3 7 10 0 — 5 0 — 1500

K n 3 0 3 A KÎT303E

Tok CTOKa, mA : Idss

2,6

4 —

10 10

0 0

5 0 — 1500 5 0 — 1500

Drain cu rren t, m A :

K I1303A , K n 3 0 3 B 0,5 2,5 10 0 — —

KTI303B 1.5 5 10 0 — —

K n 3 0 3 r 3 12 10 0 — —

K n 3 0 3 f l KIT303E

Tok 3aTBopa, hA : Jqss

3 5

9 20

10 10

0 0

G ate cu rren t, n A : K IT 303A , K I1303B , K TI303A , K FI303E ,

KF1303E — 1 0 10 —

—

K H 3 0 3 F — 0.1 0 10 — __ I

Tok 3aTBOpa, mA Igss — 10 0 — 30 — —

G ate cu rren t, m A

HanpajKeHiie otccmkh, B: Urs (oil)

C u t-o ff v o lta g e , V :

KF1303A, KIT303B 0 ,5 3 10 — 1 0 - 2

KD303B

K n 3 0 3 F , K n 3 0 3 A ,

1 4 10 1 0 - 2 __

KFI303E

HanpajKeHiie tuyMa, hB /^ Fu N o ise v o lta g e , n V / / H z

U„

8 10 10- -

KTI303A ^__ 30 10 0 — 20

K n 3 0 3 B , K n 3 0 3 B Ko3(Jxj)HitHeHT tnyMa, a B : N o ise fa c to r , dB :

K n 3 0 3 A , KÎ1303E Emkocth, nfl>:

\ C ap acitance, p F :

F

—

20

4

10 0

_

_1C3

1C"

BxoflHaa input

Q ja - 6 10 0 — 1C,:

j

npoxoflH aa transfer

C l»8

—

² 10

1

0 IC,:

97

Hn303A-Hfl303E FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS T P A H 3 M C T 0 P b I n O J I E B b lE MAJIOfï MOIHHOCTH BblCOKOfl MACTOTbl

TPA H 3H C TO PbI n O J I E B b lE MAJIOfl MOUIHOCTH BblCOKOft MACTOTbl

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

KÍ1304A

rip ejc.n .iih ie niiiHeiiHH aoiiycniM bix pcjkiimob DKcnJiyaTamm M axim um V alues o f A llow able O perating Conditions

(tamb = - 4 0 . . .4 - 8 5 X )

HanpjDKeHue 3aTB0 p-HCT0 K UOS m a x ' ^

G a te-to -so u rce v o lta g e, U 08 V H a n p si* ea n e 3aTBop-cTOK U OI> m a x ’ ® G a te-to-d rain voltage, U ol) V

H an p »5Kenvte c t o k -h c to k UD 8 m a x ' ^

D ra in -to -so u rce voltage, U BSm a x ' ^

30

30

25

Tok croKa lj) mA D r a in current, IB m A Tok3aTBopa I0 mA G a te current, l n m!1I, m A

MomHOCTb pacconiHsi na ctokc Pds maxl>, mBt P ow er d issipated at drain, P DS „ x 11, mW

20

5

200

i) riDH TCMncpaType oKpywaiomcii cpcaw ao 35 "C.

n p H Tevm cparype cBwiue 35 "C n aii6 o jib u ian mouihoctu onpeflcjiaercn 4,o p m>'h c; ^ = 2 o o _ li6 6 (U iiib _ 2 5 ) [mWJ.

i) A t a m b ie n t te m p e ra tu re u p to 35 C . . . , A t a te m p e ra tu re o f m o re th a n 35 °C , th e m a x im u m d issip ated p o w er is deter-

m ined by fo rm u la : r

P n , = 200 - I -66 (tamb - 25) [mW],

HmS’wĄ/ v K n m A - m o i ñ

-0,‘

3m s.

-Hi m A /\

-1,2 -1,6 -2,0 V K n m r - m o 3 E

>2S°c4 0^

tarn ---60 C

0 -Ofi -0,8 -1,2 -1,6 -2 UgsV

3aBHCHMOCTb KpyTH3HW xapaK- TepKCTMKH OT H anpH ÎKeH H H 3 3 T B O P - h c t o k n p n pa3flH 4H O i”t T e M n e p a T y p e oK py*atotneft cp ea w

T ran scon d u ctan ce versus gate-to- sou rce v o lta g e at variou s am b ien t tem peratures

3 a B H C H M O C T b KpyrH3Hbl xapaKTepwcTHKH O T HanpH/KCHHfl C T O K a

T r a n sco n d u cta n ce versus d rain voltage

yjZJp/'S

3 a B H C H M O C T b ITO.THOii B b l X O & H O H n p O B O A H M O C T H O T HanpflJKCHHH C T O K - H C T O K

O p en -circu it o u tp u t a d m ittan ce versus d rain -to- sou rce voltage

u i s y -10 -IS -20 -15

V K A 3A 111151 n O ilP M M E H E H lllO H 3 K C n J iy A T A U H M IN S T R U C T IO N S O N U S E

riafiKa BbiBoaoB flonycK-aeTCH 0;iH0Kpantasi Ha p a c o o sm iiu ne

\te n e e 4 mm o r Kopnyca TpaH3itcTopa.

MHHHMaJifcHoe paccTOHHvte MecTa in r iiô a (paaitycoM n e M enee 1,5 mm) BbiBoaoB OT Kopnyca TpaH3HCTopa 3 mm.

H e peK O M e H i i y e T c a H c n 0 Jib3 0 B a H M e T p araiicTOpa b c o B M e u t e n - HblX MaKCHMa/lbHblX pe)KHMax.

Idss, mA fi,n m r-K llS 0 1 E

U a ,V

',5 1,0

0,5

¿amí='S0 12S’C~

0 -0,3 -0,6-0,9-/2 -1,5-1,8 -2/-2,4-2,7-3,0

3 a B H C H M O C T b TOKa CTOK-a o t nanpii- 5K C H H H 3a T B O p - H C T O K t ip t t p a3J t H H H O H

TeMnepaType OKpy>KaK>uieit cpeflbi D rain current versus g a te-to-sou rce v o ltage at variou s a m b ie n t tem p era­

tures

O B iy H E C B E A E H H M GENERAL

KpeMHHCBbie nojiCBbie ruiaiiapiibic c inoJHipoBamibtM 3aTBO- Pom h HHflymipoBaHHbiM p-KaHaJTOM TpaH3itCTopbi KFI304A np ea- na3HaHenbi ajisi pa6oTi,i b nepeKJiionaioutHX h ycHJiiiTenbHbix ycTpofi-

C T B a x annapaTypbi im tpoK oro npHMeneniia.

Otl)opMJicniie — b McraJiJiiiHccKOM repMeTMMHOM KOpnyce c ni6K H M H BblBOflaMH.

MiiTepBaJi TCMnepaTyp OKpyjKaiouteii cpeabi o t — 40 n o + 85 °C .

M acca Tpan3iiCTopa tie 6 o jiee 1 r.

S ilico n field-effect planar in su lated -gate and induced p -chan n el transistors K I1304A are d esign ed fo r o p era tio n in sw itch in g and amplifier d ev ices o f eq u ip m en t o f w id e ap p lica tio n .

M ou n tin g — in a m eta l sea led ca se w ith flexible leads.

A m b ie n t tem perature range — from - 4 0 to + 8 5 ° C . T ransistor m a s s — 1 g , m ax.

O C H O B H b lE M H H b l E BASIC S P E C IF IC A T IO N S 3jieKTpiiHecKiie napawerpi>i Electrical Param eters

riapaMCTpbi ^{O G om a-}HCHHfl

3HaMCHHH V alue

PeXCHMU HlMepCHMA O p e ra tin g co n d itio n s

P aram eters D esigna­

tio n s

He Menee, m in

ne Go.nee, m ax

tJüS»

V

Id. mA

f.

H r

Tok CTOKa, m kA Drain cu rren t, txA

DBS — ^{0 , 2} 2 5 ; 0 * — —

KpyTH3H3 X a p a K T e p iI C T H K H , m A /B T ra n sco n d u cta n ce, m A /V

gf< ⁴ — ^{1 0} 10 1 0 "

flo p o r o B o e Hanps>KeHne, B T h resh old v o lta g e , V

(th) — _{5 1 0 0 ,0 1} —

ConpoTHBJieHHe OTKpbiToro Tpati3HC'ropa, Om O n -tran sistor resista n ce, O h m

rDS tOX) ^{1 0 0 2 0 *} I —

Tok 3aT B opa, h A G ate cu rren t, nA

— ^{2 0}

b

O

— —

Bxoflnaa eMKOCTb, n<|) Input c a p a c ita n c e , p F

C „ S — ⁹ 15 — 1 0 l!

BuxoflHaa eMKOCTb, n<J>

O utput c a p a c ita n c e , p F

C.j ,s — 6 15 1 0 ,:

n p o x o a H a a eM K O C T b, nct>

T ransfer c a p a c ita n c e , pF

Cj2S 2 15

- ^1C'1

Ilpc/tejibHbie 3iiaMciuin a o u y cm M u x pc/KHMOB SKCiwiyaTamiH Maximum V alues o f A llow able O perating Conditions (tamb = - 4 0 . . . + 8 5 C )

1)

'S4 m ax ’

» , v

25

30 Hanpsi>KeHHe ctok-hctok Uiw „„x1*, B

D rain-to-source v o lta g e, U ns max1)> V HanpHjKemie 3aTBop-ncTOK U (iS T h e leads m ay b e soldered o n c e a t a d istan ce o f at least 4 mm Gate-to-source voltage, U,

f r o m the tran sistor ca se. ^

T h e m inim u m d ista n ce b etw een the p o in t o f lead b en d in g (

b en d in g radius b ein g at least 1.5 m m ) and tran sistor ca se is 3 r ® ---

It is n o t recom m en d ed to use the transistor m COmDii'*' iHaHenHa MaKCHM&nbHO aonycTHMbix HanpiOKCHHii npHBeaeHbi win crryMafl

. . . flOZIJlOJKKH, COeUHHeHHOfi HaKOpOTKO C HCTOKOM.

m axim um co n d itio n s.

HanpsT/Kemtc 3aTBop-croK U 0d ma*” - B G ate-to-d rain vo lta g e, U GD „as” , V

30

20 S ou rce-to-su b strate vo lta g e, U 3, ,X ’ Y2) V

M ax im u m allo w ab le voltages a re given fo r th e case w hen th e s u b stra te is s h o rte d to th e so u rce.

99 98

Hn304A FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS T P A H 3 H C T 0 P b I n O J I E B b lE MAJIOK MOIIJHOCTM BblCOKOW MACTOTbl

MaKCHMa.n»HO aonycTiiMbifi tok CTOKa lDm ax» M A

M axim u m a llo w a b le drain current, l D m A

T o k b HMnynbCHOM pejKHMe npii .aJiHTejibHOCTii HMnyjibca h c 6 oJiee 10 mkc, CKBawHocTH kc Menee 10, flJiiiTenb- h o c th (J)Pohtob HMnyjibca n e 6 ojiee 10 mkc UdM max, mA C urrent in p ulsed o p era tio n at a p u lse d u ration o f not m ore than 10 ¡as, o n -o ff tim e ratio o f n o t less than 10, d u ration o f p u lse lea d in g ed g es o f n o t m o re than 10 ¡is, Ud m

M ountocTb paccenBaHHH P D3 m B t:

D issip a ted pow er,^ D S max* > H l W . W . = - 4 0 . . . + 5 5 ° C U . = 8 5 ° C

30

60

M o lH H O C T b B H M n y jlb C H O M p e jK H M e n p H fl-'IH T C JIbH O C I H

HMnyjibca H e OOJICC 1 0 m c , c k b 3 J k h o c t h He MCHee 10, W H T e n t H O C T H cj>poH TO B H M n y j i b c a n e 6 o : i e e 10 M C Pj)M mas3i> m B t .

P o w er in pulsed o p era tio n a t a p u lse d u ration o f n o t m ore than 10 m s, o n -o ff tim e ra tio o f n o t less than 10, d u ration o f p u lse lead in g ed ges o f n o t m o re than 10 m s P 3) m \V -

1 D M m a x ’ l l l v v '

t . « * = - 4 0 . . . + 5 5 ° C . = 85 °C

200

1 0 0

T e M n e p a T y p a n e p e x o . u a tj ,,ra s, GC

300 150

115 J u n ctio n tem perature ts _{» ^}°C

BwöpaHHbie HanpHiKeiiHa c yiciOM hx 3HaKoa aojijkhu yAOBJieTBopari, liepa-

BeHCTBaM:

. ,

I U d b — U „ t i b3 I U D3 m a x I»

I U q8 — U s u b s I = s I U ^ g m a x I

» B a n a iia ïo iie TBMitepaTyp o r 55 a o 85 °C moiuhocti, cm uKaerc» n o mmeftHOMy aaKOHy.

is, sh o u ld co n fo rm to inequali- V Selected vo ltag es, w ith ac c o u n t m a d e fo r th e ir signs,

I UdS ~ Unubs I ^ ! U l ) S m ax i <

1 U o s “ U subn I ^ I ^ 0 3 m ax 1

e fro n t 55 to 85 °C , d issip ated p o w er d ecreases linearly.

a) W ith in te m p eratu re ran g e f

TunoBbie BbixoflHbie xapaK- TepHCTHKH rrpn p a a . - u r m o M HanpaaceHHH 3 a T B 0 p - H C T 0 K Standard o u tp u t character­

istics at v a rio u s gate-to- sou rce voltages

r iS ( 0 N ) I 'm (o n) [ Ii ' ImA)

T H n o B b i e n e p e x o z u u . i e x a - p a K T e p H C T H K H n p H pa3J!HH- H O M H a n p H J K e H H H C T O K -H C- TOK

Standard transient resp onse at variou s d ra in -to -so u rce voltages

P d s <o*>

U . m A

3 a B H C H M O C T b O T H O C H T eJTb- H 0 ÎÎ u e.riH H H IIb l K P y T H 3 H b I X a p a K T e p iiC T H K H O T T O K a C T O K a

R ela tiv e value o f tran scon ­ d u ctan ce versus drain cu r­

rent

P i s (O H )

3 a B H C H M O C T b O T H O C H T C JlbH O ii BC- JIH H H H b l K p y T I B l l b l X a p a K T e p H C T H K H O T H a n p H J K e H H H c t o k-h c t o k

R ela tiv e valu e o f tran scon d u ctance versus d ra in -to -so u rce voltage

0,01 0,1

3 a B H C H M O C T b C O n p O T H B J ie - H H H CTOK-HCTOK B O T K p b lT O M COCTOHHHH O T T O K a C T O K a D ra in -so u rce resistan ce o f on -tran sistor versus drain current

20 j o i/cs/

3 a B H C H M O C T b C O n p O T H B /ie - HHH CTOK-H CTO K B O T K p b lT O M COCTO HH HH O T H a n p H J K e H H H 3 a T B O p -H C T O K

D ra in -so u rce resistan ce o f o n -tran sistor versus g a te-to - sou rce v o lta g e

u 1,0

^ 1

y Ucs=2or

■os 0,10,7

2.5 2.0 l.s i . o 0.5

C i z s C zzs i U ns = / 5 r )

\

\

\

^{u c s =o}

■CO -40 -20 0 20 40 SO 30100120 t amt,, ‘C

3 a B H C ltM O C T b O T H O C H T e jIb H O ii Be- JIH H H H b l C O n p O T H B J ie H H H C TO K -H C­

TO K B O T K p b lT O M COCTOHHHH O T

TeMnepaTypw OKpyJKaioiueft c p ea w R ela tiv e v a lu e o f drain -sou rce resistan ce o f o n -tran sistor versus a m b ie n t tem perature

0 5 10 15 20 25 U1S,V

3 a B H C H M O C T b O T H O C H T erib - H O tl B C JIH H H H bt B blX O flH O H eM K O C T H O T H a n p H JK e H H H CTOK-H CTO K

R ela tiv e value o f ou tput ca p a cita n ce versus drain-to- so u rce voltage

100

BblCOKOtf MACTOTbl 0(1 A A

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY **' * ü U 4 - H TRANSISTORS

T P A H 3 H C T 0 P b I n O J I E B b lE M A JI0ÏÏ MOIIJHOCTH

1.2 i.O 0,8

0.6

&I2S Cus (Uns*!5r)

U c s = 0

0 5 10 15 20 25 Uvs.V

3 a B H C H M O C T b O T H O C H T eJlb - H O li BCJTHHHHbl Iip O X O flH O ji CM KOCTH O T H a n p H JK e H H H CTOK-HCTOK

R elative value o f transfer ca p a cita n ce versus drain-to- source v o ltage

7,2 1,0 0.S 0,6

C fIS C n s (Vds - 15 V)

- Uos- 0

UDS 0 5 W 15 20 25

3 a B H C H M O C T b O T H O C H T e jlb - H O ft B e j I H H H H b ! BX O/tH Ol'i CM KOCTH OT H a n p H JK e H H H CTOK-HCTOK

R elative value o f input c a ­ p a cita n c e versus drain-to- sou rce voltage

3aB H C H M O C Tl> O T H O C H T e /lb - HOÖ BeJlHWllHbl KpyTHSHbl X a p a K T e p iiC T H K H O T T e M - n e p a T y p b i o K p y » a i o m e i i c p e f l b i

R ela tiv e value o f trans­

co n d u c ta n c e versus am bient tem perature

3.0 2.0 1.0

h s s ( UB5 *25V)

uGS~-o /

. y UDS,

0 W 20 30

3 a B H C H M O C T b O T H O C H T C JlbH O ii B e jiH H H H b t n a i a i i b H o r o T O K a C T O K a O T H a n p H JK e H H H CTOK- HCTOK

R elative value o f drain c u t-o ff current versus d rain -to-sou rce voltage

Id s s ,f> b

t a m S X 0 20 40 60 9 0 100 120 HO

3 a B H C H M O C T b H a i a J i b H o r o T O K a C T O K a o t T e . M n e p a T y p b i O K p y j K a i o m e n c p e f l b i

D ra in cu t-o ff current versus am b ien t tem perature

Y K A J A H U il H O n P H M E H E H H I O H 3K C II J iy A T A H H I1 IN S T R U C T IO N S O N U S E

flaHTb c:ie/iyeT npn TeMnepaType ne 6ojree 295 C b T eyenne ne 6ojiee 3 c.

MHHHMajibHoe paccTOHHHC o t KOpnyca TpatnHCTopa n o MecTa IiailKH (CBap'KIl) BbtBOflOB 3 MM. B MOMeHT naiik'M BCe BblBOAbI AOJIJKHbl 6 b IT b COeHHHeHbl HaKOpOTKO.

P a a n y c 3aKpyraeHHH npn H3rn6 ax 1,5— 2 mm.

ripn npHMeHeHHH H MOHTaJKC TpaH3HCTOpOB ;K).l>Klib! 6 blTb npHHHTbi Mepw, hck;i toMaioiniie iio'i;ieticTBne craT iriccK oro 3apsifla Ha T p a H 3 H C T O p .

S old erin g sh ou ld be perform ed a t a tem perature o f n o t higher than 295 °C fo r n o lon ger than 3 s.

T h e m in im u m d istan ce b etw een the transistor ca se and the so ld er (w eld ) jo in t o f the lead s is 3 m m . W h ile sold erin g, see that all the leads are shorted.

T h e b en d in g radius sh o u ld b e w ith in 1.5 to 2 m m .

W h en m o u n tin g an d u sin g the transistors, take m easures to a v o id d ischarge o f sta tic electricity through them .

T P A H 3 H C T 0 P b I n O J I E B b lE MAJI0PÏ MOU^HOCTH

BbICOKOPÏ MACTOTbl H ü / 1 - K H M

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY 11 110 U U / J n i l O U U r l TRANSISTORS

OE1UHE C B E /lE H H il G EN E R A L

K p e M H H C B b ie njiaHapiibie i i o / i c ß b i e c H3 0 J iH p 0 B a n H b tM 3 3t b o - P O M 11 B C T p O C H H b t M K a H a J l O M n - T H T O T p a H3H C T O p b I K n 3 0 5/ f — K r i 3 0 5 H n p e f l t i a s n a t e H b i a j i h p a ö o T b i b B x o f l H b i x K a c K a / t a x b w c o - K O H a C T O T H b l X y C H J I H T e j i e f t H B y C H J I H T e j I H X c B b l C O K H M B X O f l H b I M C O n p O T H B J ie H H e M y C T p O iiC T B U J H p O K O rO n p H M e H e H H H .

S ilico n field-effect p lan ar in su lated -gate b u ilt-in n -chan n el transistors K .n 3 0 5 ft— KFBOSM are in te n d ed fo r o p era tio n in in p ut sta g es o f high -freq u en cy am plifiers an d in am plifiers w ith a high in p ut resistan ce o f d ev ices o f w id e a p p lica tio n .

101

Hn305A-HI1305M FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS T P A H 3 M C T 0 P b I n O J I E B b lE MAJIOW MOIHHOCTH B b lC O K O « MACTOTbl

OifiopMiieime — b MeTaJMHMecKOM repMCTHHHOM xopnyce c rH0KM M H B b lB O fla M H .

MHTepBaJi TeMnepaTyp OKpyiKarouieii cp ea w o t — 60 a o + 125 °C .

M acca TpaH3Hcropa we 6 o jiee 0 ,7 r.

M o u n tin g — in a m etal sca led ca se w ith flexible leads.

A m b ie n t tem perature ran ge — from —60 to + 1 2 5 C . T ransistor m ass — 0 .7 g, m ax.

O C H O B H b lE /J A H H b lE B A S IC S P E C IF IC A T IO N S S.'teKTpiiHecKiie iiapaMCTpu E lectrical P aram eters

3liaHCHMH PeKHMbl IHMepcHH»

riapaMeTpw 060'3HaMCHHH Value M easuring conditions

ne \ienee, ! ne GoJiee, U p s,

Id. mA

r,

Parameters Designations

min max V

M H z

KpyTM3Ha xapaKTcpncTHKH, mA / B : 8m* — — 10 5 1 • i o - 3

T r a n s c o n d u c ta n c e , m A / V :

K n 3 0 5 f l . K n 3 0 5 X 5 ,2

A

10,5

q —

K I 1 3 0 5 E K I1 3 0 5 M

4 4

O

1 0,5 — — —

H anpaw cH tie o tc c h k h TOKa c to k b , B U t!8 (uif) 6 — 10 0,0 1

~~

D r a in cu rren t c u t-o ff v o lta g e , V

T o k sa i'B o p a , A : ^GSS — — 0 ; 15*

G a te cu rren t, A :

K I 1 3 0 5 f l , Kn305>K,

1

■ i o - ,J

5 - 1 0 - 1'-

__

KI1305H

KFI305E ^{— — — —}

HanpsDKeinie MCA'ay saTBopoM n hctokom, B: U 09 — — 10 5

G a te -to -so u r c e v o lta g e , V :

K n 3 0 5 fl 0.2 2

0.5

—0.2

— K H 305E , Kn305>K

Kn305M

—0.5

— 2,5 ^{— —}

10

B xoauasi e-MKOCTi., n O O n » — ⁵ 10 ⁵

In p u t c a p a c ita n c e , p F :

10

n p o x o a n a H eMKOCTb, n<l> I2S — ^{0 ,8 10 5}

T r a n sfe r c a p a c ita n c e , p F :

F ^{15 5 2 5 0}

Ko3<i)(j)nuuenT rnyMa, af>:

N o is e fa cto r , d B : K n 3 0 5 A , K I 1 3 0 5 X 7.5

KoscjxJnmnetiT ycHjieimsi n o moiuhocth, a B : o v P o w e r g a in , d B :

K n 3 0 5 A . Kn305>K ^{i 13 —} 15 5 250

B w xoaH as npoBoaitMOCTb, m kCm 1 y , 2S ¹⁵⁰ I — 10 ^{5 —}

O u tp u t a d m itta n c e , u.Cm

Tok CTOKa 3aKpwToro n p n 6 o p a , mkA ! I

*DS8 (off) n i : 10: 10* ---

D ra in current o f o ff-tr a n sisto r,

* i i .... 1

102

TPA H3H C TO PbI n O JIE B b lE MAJIOtf M 0UJH 0CTH BblCOKOH HACTOTbl

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY TRANSISTORS

H n ₃₀₅ fl-HÍ ₁₃₀₅ M

ripefl&nbHbte aua'ienint aonycTHMbix pokhmob jKcnjiyaTaunH Maximum V alues o f A llow able O perating C onditions (tamli = - 6 0 . . . + 125 °C )

Hanpfl*eHne 3 a T B 0 p -C T 0 K U BG ,,„x, B Gate-to-drain vo lta g e, U DC, tmx, V Hanp»5KenHe 3aTBop-ncTOK U t:s B G ate-to-source voltage, U oa ,n!ls, V Hanp5i*enne c t o k-h c t o k U ds B D rain-to-source voltage, V HanpiDKemte croK-nofljiowKa Ui>], ,n!lx, B

15

15

15

15

D rain -to-su b strate voltage, U JM, ' Tok CTOKa ID mA

D ra in current, 1B „mI, m A

Moiuhoctb paccesHiisi P D8 ,mBt: D issip a ted p ow er, P Da mas, m W :

U n = - 6 0 . . . + 2 5 ° C tlmb = 1 2 5 °C

1 5

1 5 0 5 0

^ B mrrep&a;ic T e M n e p a T y p 25. . .125 C Ppg m:lxcH’*>KaeTCfl.nnncfiHO. '> W ith in te m p e ra tu ie ran g e fro m 25 to 125 C , Pc 8 omx decreases linearly.

3aBHCHMOCTb TOKa CTOKa ot naiip«-

»eHHSi 3aTBOp-HCTOK npH pa3/IHM- POM Hanpa5KeHHH CTOK-HCTOK D rain current versus g a te-to -so u rce voltage at va rio u s d rain -to-sou rce voltages

3a B H C H M O C T b T O K a 3aTBOpa OT TeMnepaTypbi OKpyMcaroinefi cp ea w G ate current versus a m b ie n t tem ­ perature

3 a B H C H M O C T b B X O flH O it H B b lX O flH O li r ip O - B O flH M O C T C fi O T 4Ü C TO TW

Input and o u tp u t ad m itta n ces versus frequency

3 a B H C H M O C U . T O K a C TO K a O T H an p sm eH M H 3 aTB O p-H CT O K

n p n p a 3 JMHHOft T e M n e p a T y p e OKpy^aiom eii cp ea w D r a in current versus g a te-to -so u rce v o ltage a t variou s a m b ie n t tem perature

Ijj.mA

4 u„s --wv

Vcs* Const

1

I

Ues.y

} J c s -w v In -Const i

1 Lnml°C

-60 -40 0 40 80 120 tams ; c

3uBncHMocTt. TOKa CTOKa o t T e M ­ n e p a T y p b i O K p y / K a i o m e f i c p e a w D ra in current versus a m b ie n t tem ­ perature

-SO 0 ‘>0 SO 120

3aBHCHMOCTt HanpajKeHHa 3aTBop- MCTOK ot TeMnepaTypbi OKpyacaio- lueii cp eaw

G a te-to -so u rce v o lta g e versus a m ­ bient tem perature

103

T P A H 3 H C T 0 P b I ü O J l E B b l E MAJIOÎÏ MOUJHOCTH BbICOKOfï MACTOTbl

Hn305fl-Hn305M F IE L D -E F F E C T L O W -P O W E R H IG H -F R E Q U E N C Y T R A N S IS T O R S

C/ts,PF F '

~~ - - - - —

5,0 U n s ^ W V

t -- 10 MHz U n

f -- 10 to y MHz

4.0 - ---

— --- —

3.0

2.0 --- --- --- --- - - ^{M A I}---

1,0 -5,0 -4.0 -3.0 -2.0 -1,0 0 1

u s s . y

-5,0 -4 0 -3,0 -2.0 -1.0 0 I Z Uis/

3 a B H C H M O C T b B X O flH O ii eM K O C T H O T H an p H H cem iH 3 aT B 0 p -» C T 0 K

Input ca p a cita n ce versus g a te-to -so u rce v o ltage

3 a B H C H M O C T b n p O X O f lH O ii eM K O C T H O T HanpsraceHHH 3 a T B 0 p - H C T 0 K

T ransfer ca p a cita n ce versus gate-to- sou rce voltage

F , d B K n 3 0 5 A , m 0 S X

U is = 1 5 / I p - 5 m A

I 1

0 100 150 ZOO 2 5 0 f, M H z

3 a B n c n M o c T b K 0 3 (jK t)n m ieH T a m y M a

o t n a c T O T b i T p a n 3 n c r o p o B K II3 0 5 A , KI1305>K

N o is e fa cto r versus frequency (transistors K FI305A . KTI305>K)

3 a B H C H M 0 C T b K o a itM lm u n e m a y c K J ie i n ia o t M aC T O T bl T p a H 3 H C T O p O B KF1305A, K I1 3 0 5 X

G a in versus freq u en cy (transistors K n 3 0 5 A , K n 3 0 5 K )

T u n o B a a 3 a B n e n M O C T b K p y r a 3 H b i x a p a K T e p iiC T H K H O T T O K a C T O K a

S tandard relation b etw een tran scon d u ctance and drain current

Çmsi mA/V t û t ’ toy

!¡¡=5mA 3 " " -s S

! ¡

6

1 ____

-SO -40 0 40 80 IZOtamôX

0,3

0

Ucs*0 f*f0MHz

3.0 10 15 U ns,y

3 a B H C H M O C T b n p O X O A H O fl eM K O C T H O T H a n p s r a t e H H ü c t o k-h c t o k

T ransfer cap a cita n ce versus drain-to- so u rce v o ltage

T C p H C T H K H O T H a n p j D K C H 11H 3 3T B O p - H C T O K n p H pa3JTHHHOM iianpii/KCHHH C T O K - H C T O K

S tandard relation b etw een tran scon d u ct­

a n ce and g a te-to -so u rce v o lta g e at various d ra in -to -so u rce voltage

3 a B H C H M 0 C T b K p y T H 3 H b l X a p a K T e p iiC T H K H o t T e M n e p a T y p b i o K p y » a i o m e i i c p e f l b i T r a n sco n d u cta n ce versus a m b ie n t tem ­ perature

Y K A3A H H ÍI H O n P H M E H E H H I O H 3K C IIJ IV A T A IU1V1 I N S T R U C T IO N S O N U S E

r i p n x p a H C H H H H T p a H C n O p T H p O B K e B b l B O f l b l A O f l X H b l 6 b I T b

33MKHyTbL MeîKXty c o6o ü .

B ce paôoTbi c T p am u crop oM a o jh k h h Becracb c 3a3eMJieHHt.iM KO/ibuoM n a pyKe onepaT opa. Ilc p c ;. HanaJiOM p a6o ib i c TpamnCTO- paMH He0 6x0AHM0 BbwepîKaTb jianon ii pyx Ha 3a3eMJieHHOM Meraji- JlHHeCKOM JlHCTe B TCMCHlie 120 C.

r ia v iK y r i p n 6 o p o B r r p n M O H Ta^ce n p 0 H 3 B 0 A H T b n p t i T e M r te p a T y p e 2 5 0 "C b TeMemie 3 c.

W h ile in storage and transit, se e that the leads are clo sed to

e a ch other. .

W h ile perform in g any o p era tio n s on the transistor, the operator

sh ou ld b ear a grounded ring. ,

P rior to h a n d lin g the transistor, k eep y o u r p a lm s o n a grounded m eta l sh ee t fo r 120 s.

S old er the transistors at a tem perature o t 2 5 0 C to r a s.

B b ic o K O K q A C T O T bi u n o n c A u n o n e d

FIELD-EFFECT LOW-POWER HIGH-FREQUENCY '■I I uUu A “ ^Ml I OÜÜ D

TRANSISTORS

T P A H 3 H C T 0 P b I IlO J lE B b lE MAJIOft MOULJHOCTH

OB1UHE C B E A E H M il G ENERAT

K p e M H u e B b ie m ia H a p H b ie n o /i e B b ie c a b y m h H 3 0 Jin p 0 B a H H b iM H 3aTBopaMH hBCTpoennbiM KaHaJiOM n-Tnna TpaH3HCTopbi K fI306A — KFI306B i r p e iii ia s n a '- ie i ib i ;u i f l p a 6 o T b i b y cH jiH T C .'ii.u b ix h n p e o 6 p a - s o B a T e jib H b ix K a c K a A a x b m c o k o m h h h3k oH li a c T O ii .i b y c i iJ in T e ;ia x c BblCOKllM BXOAHbIM COnpOTHBACHHCM >’CTpOifCTB UIHpOKOTO n p i l - MenenHii.

Ot|)opMJiCHHC — b M eia;u ih'iccKOM repMCTHMiioM Kopriyce C FuSkHMH BblBOAaMH.

HiiTcpBaji TCMnepaTyp 0Kpy>Kai0ineii cpeAbi o t — 60 a o + 125 °C.

M acca TpaH3Hci op a ne 6o;iee 0 ,7 r.

S ilico n p lanar field-cfTect transistors K I1306A — K II3 0 6 B with two insulated gates and b u ilt-in n -chan n el are design ed fo r o p era tio n in H F and L F am plifier and co n verter stages in am plifiers w ith a high input resistan ce o f d ev ices o f w ide a p p lica tio n .

M ou n tin g — in a m etal sealed case w ith flexible leads.

A m b ie n t tem perature range — from 6 0 to + I 2 5 ° C . T ransistor m ass — 0 .7 g, m ax.

O C H O B H b lE A A H H b lE BASIC S P E C IF IC A T IO N S 3 .ie K T p in e c K ii e n a p a M e T p w Electrical Param eters

IlapaMeTpbi

Parameters

0603Ha4eHHH

Designations

3»taHeHHH Value

PewiiMbi jOMcpemiH Measuring conditions He MCHee,

min

ne 6o/iee, max

U DS> ^CIS’

1 î**

UI¡2S"

V

Id.

mA r,

Hz

KpyTH3na x a p a K T e p iiC T H K H (n o saT Bopy 1),

mA /B êtns 3 8 15; 10** 5 103

T r a n sco n d u cta n ce (rela tiv e to g a le 1), m A /V

HanpsrA'eiiiie MCA'ay 3aTBopoM h h c to k o m , B: Ugis .— — 15; 10** 5 __

G a te -io -so u r c e v o lta g e , V :

KIT306A — 0 ,5 0 ,5 __ __ '

KIT306E 0 2 — — __

K I1306B — 3,5 0 — __

Hanpa>KeHHe otcchkh, B: UqiS (off) — — 15; 10** 0.0 __

Cut-ofT v o lta g e , V :

K FI306A , KIT306E 4 __ __ __ __

KIT306B 6 — — — —

Tok n e p s o r o saT B opa, hA ^GISS — 5 0 ; 2 0 ** 0 ---

F irst-gate cu r r e m , nA

BxoAHasi eMKOCTb (n o 3aTBopy 1), n<P Q i s — 5 2 0 ; 10** 5 107

Input c a p a c ita n c e (rela tiv e to g a te 1), p F

ripoxoAHaa eMKOCTb (n o 3aTBopy 1), nO c123 ^{— 0 ,0 7} 2 0 ; 10** 5 107

Transfer c a p a c ita n c e (rela tiv e to g a te 1), p F

Ko3iJ)(j)HUHeHT m yM a, aE F — 7 20; JO** 5 2 - 108

N oise fa cto r , dB

>-• -, A • ■

HanaAbHbiii t o kc t o k b, m kA ^D SS ( o f f) — ! 5 ¡ 15; 10* — —

Drain c u t-o ff cu rren t, ,uA

BxoAHoe conporHBJieiiHe, kOm — ₁ 12 1 15; 10** 5 6 * 10 7

Input resista n ce, k O h m

105