BUP314D

IGBT With Antiparallel Diode Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1 Pin 2 Pin 3

G C E

Type V_CE I_C Package Ordering Code

BUP 314D 1200V 42A TO-218 AB Q67040-A4226

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage V_CE 1200 V

Collector-gate voltage R_GE = 20 kΩ

V_CGR

1200

Gate-emitter voltage V_GE ± 20

DC collector current, (limited by bond wire) T_C = 60 °C

T_C = 90 °C

I_C

33 42

A

Pulsed collector current, t_p = 1 ms T_C = 25 °C

T_C = 90 °C

I_Cpuls

66 84

Diode forward current T_C = 90 °C

I_F

28 Pulsed diode current, t_p = 1 ms

T_C = 25 °C

I_Fpuls

168 Power dissipation

T_C = 25 °C

P_tot

300

W

Chip or operating temperature T_j -55 ... + 150 °C

Storage temperature T_stg -55 ... + 150

Maximum Ratings

Parameter Symbol Values Unit

DIN humidity category, DIN 40 040 - E -

IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case R_thJC ≤ 0.42 K/W

Diode thermal resistance, chip case R_thJCD ≤ 0.83 Electrical Characteristics, at T_j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics Gate threshold voltage V_GE = V_CE, I_C = 0.35 mA

V_GE(th)

4.5 5.5 6.5

V

Collector-emitter saturation voltage V_GE = 15 V, I_C = 25 A, T_j = 25 °C V_GE = 15 V, I_C = 25 A, T_j = 125 °C V_GE = 15 V, I_C = 42 A, T_j = 25 °C V_GE = 15 V, I_C = 42 A, T_j = 125 °C

V_CE(sat)

- - - -

4.3 3.4 3.3 2.7

- - 3.9 3.2

Zero gate voltage collector current V_CE = 1200 V, V_GE = 0 V, T_j = 25 °C

I_CES

- - 0.8

mA

Gate-emitter leakage current V_GE = 25 V, V_CE = 0 V

I_GES

- - 100

nA

AC Characteristics Transconductance V_CE = 20 V, I_C = 25 A

g_fs

8.5 20 -

S

Input capacitance

V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_iss

- 1650 2200

pF

Output capacitance

V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_oss

- 250 380

Reverse transfer capacitance V_CE = 25 V, V_GE = 0 V, f = 1 MHz

C_rss

- 110 160

Electrical Characteristics, at T_j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at T_j = 125 °C Turn-on delay time

V_CC = 600 V, V_GE = 15 V, I_C = 25 A R_Gon = 47 Ω

t_d(on)

- 75 110

ns

Rise time

V_CC = 600 V, V_GE = 15 V, I_C = 25 A R_Gon = 47 Ω

t_r

- 65 100

Turn-off delay time

V_CC = 600 V, V_GE = -15 V, I_C = 25 A R_Goff = 47 Ω

t_d(off)

- 420 560

Fall time

V_CC = 600 V, V_GE = -15 V, I_C = 25 A R_Goff = 47 Ω

t_f

- 45 60

Free-Wheel Diode Diode forward voltage

I_F = 25 A, V_GE = 0 V, T_j = 25 °C I_F = 25 A, V_GE = 0 V, T_j = 125 °C

V_F

- -

1.7 2.2

- 2.8

V

Reverse recovery time

I_F = 25 A, V_R = -600 V, V_GE = 0 V di_F/dt = -800 A/µs

T_j = 25 °C T_j = 125 °C

t_rr

- -

130 -

180 -

ns

Reverse recovery charge

I_F = 25 A, V_R = -600 V, V_GE = 0 V di_F/dt = -800 A/µs

T_j = 25 °C T_j = 125 °C

Q_rr

- -

6 2.3

11 4.3

µC

Power dissipation P_tot = ƒ(T_C)

parameter: T_j ≤ 150 °C

0 20 40 60 80 100 120 °C 160

T_C 0

40 80 120 160 200 240 W 320

Ptot

Collector current I_C = ƒ(T_C)

parameter: V_GE ≥ 15 V , T_j ≤ 150 °C

0 20 40 60 80 100 120 °C 160

T_C 0

5 10 15 20 25 30 35 40 45 A 55

IC

Safe operating area I_C = ƒ(V_CE)

parameter: D = 0, T_C = 25°C , T_j ≤ 150 °C

10 -1 10 0 10 1 10 2 10 3

A

IC

10 ⁰ 10 ¹ 10 ² 10 ³ V

V_CE DC

10 ms 1 ms 100 µs 10 µs

tp = 4.1µs

Transient thermal impedance IGBT Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -3 10 -2 10 -1 10 0

K/W ZthJC

10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse

0.01 0.02 0.05 0.10 0.20 D = 0.50

Typ. output characteristics I_C = f (V_CE)

parameter: t_p = 80 µs, T_j = 25 °C

0 1 2 3 V 5

V_CE 0

5 10 15 20 25 30 35 40 A 50

I_C

17V 15V 13V 11V 9V 7V

Typ. output characteristics I_C = f (V_CE)

parameter: t_p = 80 µs, T_j = 125 °C

0 1 2 3 V 5

V_CE 0

5 10 15 20 25 30 35 40 A 50

I_C

17V 15V 13V 11V 9V 7V

Typ. transfer characteristics I_C = f (V_GE)

parameter: t_p = 80 µs, V_CE = 20 V

0 2 4 6 8 10 V 14

V_GE 0

5 10 15 20 25 30 35 40 A 50

I_C

Typ. switching time

t = f (R_G) , inductive load , T_j = 125°C par.: V_CE = 600 V, V_GE = ± 15 V, I_C = 25 A

0 20 40 60 80 100 120 140 Ω ¹⁸⁰

R_G 10 1

10 2 10 3

t ns

tdon tr tdoff

tf

Typ. switching time

I = f (I_C) , inductive load , T_j = 125°C

par.: V_CE = 600 V, V_GE = ± 15 V, R_G = 47 Ω

0 10 20 30 40 A 60

I_C 10 1

10 2 10 3

t ns

tdon tr tdoff

tf

Typ. switching losses

E = f (I_C) ,inductive load ,T_j = 125°C

par.: V_CE = 600 V, V_GE = ± 15 V, R_G = 47 Ω

0 10 20 30 40 A 60

I_C 0

1 2 3 4 5 6 7 8 mWs 10

E

Eon

Eoff

Typ. switching losses

E = f (R_G) , inductive load , T_j = 125°C par.: V_CE = 600V, V_GE = ± 15 V, I_C = 25 A

0 20 40 60 80 100 120 140 Ω ¹⁸⁰

R_G 0

1 2 3 4 5 6 7 8 mWs 10

E

Eon

Eoff

Typ. gate charge V_GE = ƒ(Q_Gate)

parameter: I_{C puls} = 25 A

0 20 40 60 80 100 120 140 nC 170

Q_Gate 0

2 4 6 8 10 12 14 16 V 20

VGE

800 V 600 V

Typ. capacitances C = f (V_CE)

parameter: V_GE = 0 V, f = 1 MHz

0 5 10 15 20 25 30 V 40

V_CE 10 -2

10 -1 10 0 10 1

nF C

Ciss

Coss

Crss

Short circuit safe operating area I_Csc = f (V_CE) , T_j = 150°C

parameter: V_GE = ± 15 V, t_sc ≤ 10 µs, L < 25 nH

0 200 400 600 800 1000 1200 V 1600 V_CE 0

2 4 6 10

I_Csc/I_C(90°C)

Reverse biased safe operating area I_Cpuls = f (V_CE) , T_j = 150°C

parameter: V_GE = 15 V

0 200 400 600 800 1000 1200 V 1600 V_CE 0.0

0.5 1.0 1.5 2.5

I_Cpuls/I_C

Typ. forward characteristics I_F = f (V_F)

parameter: T_j

0.0 0.5 1.0 1.5 2.0 V 3.0

V_F 0

5 10 15 20 25 30 35 40 A 50

I_F

T_j=25°C

=125°C Tj

Transient thermal impedance Diode Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -4 10 -3 10 -2 10 -1 10 0

K/W

ZthJC

10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse

0.01 0.02 0.05 0.10 0.20 D = 0.50

Package Outlines Dimensions in mm Weight: