BUZ341

(1)

Data Sheet 1 05.99

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type V_DS I_D R_DS(on₎ Package Ordering Code

BUZ 341 200 V 33 A 0.07 Ω ^{TO-218 AA} C67078-S3128-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current T_C = 28 ˚C

I_D

33

A

Pulsed drain current T_C = 25 ˚C

I_Dpuls

132

Avalanche current,limited by T_jmax I_AR 33

Avalanche energy,periodic limited by T_jmax E_AR 16 mJ

Avalanche energy, single pulse I_D = 33 A, V_DD = 50 V, R_GS = 25 Ω L = 1.09 mH, T_j = 25 ˚C

E_AS

790

Gate source voltage V_GS ±²⁰ ^V

Power dissipation T_C = 25 ˚C

P_tot

170

W

Operating temperature T_j -55 ... + 150 ˚C

Storage temperature T_stg -55 ... + 150

Thermal resistance, chip case R_thJC ≤^0.74 ^K/W

Thermal resistance, chip to ambient R_thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

(2)

Electrical Characteristics, at T_j= 25˚C, unless otherwise specified

min. typ. max.

Static Characteristics

Drain- source breakdown voltage V_GS = 0 V, I_D = 0.25 mA, T_j = 25 ˚C

V_(BR)DSS

200 - -

V

Gate threshold voltage V_GS=V_DS,I_D = 1 mA

V_GS(th)

2.1 3 4

Zero gate voltage drain current V_DS = 200 V, V_GS = 0 V, T_j = 25 ˚C V_DS = 200 V, V_GS = 0 V, T_j = 125 ˚C

I_DSS

- -

10 0.1

100 1

µA

Gate-source leakage current V_GS = 20 V, V_DS = 0 V

I_GSS

- 10 100

nA

Drain-Source on-resistance V_GS = 10 V, I_D = 21 A

R_DS(on)

- 0.06 0.07

Ω

(3)

Data Sheet 3 05.99

min. typ. max.

Dynamic Characteristics Transconductance

V_DS≥²_*_I_{D *} RDS(on)max, I_D = 21 A

g_fs

15 23 -

S

Input capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_iss

- 2600 3900

pF

Output capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_oss

- 500 750

Reverse transfer capacitance V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_rss

- 230 350

Turn-on delay time

V_DD = 30 V, V_GS = 10 V, I_D = 3 A R_GS = 50 Ω

t_d(on)

- 40 60

ns

Rise time

t_r

- 110 170

Turn-off delay time

t_d(off)

- 450 680

Fall time

t_f

- 160 240

(4)

Electrical Characteristics, at T_j= 25˚C, unless otherwise specified

min. typ. max.

Reverse Diode

Inverse diode continuous forward current T_C = 25 ˚C

I_S

- - 33

A

Inverse diode direct current,pulsed T_C = 25 ˚C

I_SM

- - 132

Inverse diode forward voltage V_GS = 0 V, I_F = 66 A

V_SD

- 1.3 1.6

V

Reverse recovery time

V_R = 100 V, I_F=l_S,di_F/dt = 100 A/µs

t_rr

- 230 -

ns

Reverse recovery charge

V_R = 100 V, I_F=l_S,di_F/dt = 100 A/µs

Q_rr

- 1.8 -

µC

(5)

Data Sheet 5 05.99 I_D = ƒ(T_C)

parameter: V_GS ≥ 10 V

0 20 40 60 80 100 120 ˚C 160

T_C 0

4 8 12 16 20 24 28 A 34

ID

P_tot = ƒ(T_C)

0 20 40 60 80 100 120 ˚C 160

T_C 0

20 40 60 80 100 120 140 W 180

Ptot

Safe operating area I_D = ƒ(V_DS)

parameter: D = 0.01, T_C = 25˚C

10 -1

10 0

10 1

10 2

10 3

A

I_D

10 ⁰ 10 ¹ 10 ² V

V_DS ^R^DS(on)

= V ^DS / I D

DC

10 ms 1 ms 100 µs 10 µs 1 µs

tp = 350.0ns

Transient thermal impedance Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -3

10 -2

10 -1

10 0

K/W Z_thJC

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1s 10 ⁰ t_p

single pulse

0.01 0.02 0.05 0.10 0.20 D = 0.50

(6)

Typ. output characteristics I_D = ƒ(V_DS)

parameter: t_p = 80 µs

0 2 4 6 8 V 11

V_DS 0

5 10 15 20 25 30 35 40 45 50 55 60 65 A 75

I_D

V_GS [V]

a a 4.0

b b 4.5

c c 5.0

d d 5.5 e

e 6.0 f

f 6.5 g

g 7.0 h

h 7.5 i

i 8.0 j

j 9.0 k

k 10.0

Ptot = 170W l

l 20.0

Typ. drain-source on-resistance R_{DS (on)} = ƒ(I_D)

parameter: V_GS

0 10 20 30 40 50 A 65

I_D 0.00

0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18

Ω

0.22

R_{DS (on)}

V_GS [V] = a 4.0 V_GS [V] =

a 4.5 V_GS [V] =

a

a 5.0

b

b 5.5

c

c 6.0

d

d 6.5

e

e 7.0

f

f 7.5

g

g 8.0

h

h 9.0

i

i 10.0

j

j 20.0

Typ. transfer characteristics I_D = f (V_GS) parameter: t_p = 80 µs

V_DS≥^{2 x} I_D x R_DS(on)max

0 1 2 3 4 5 6 7 8 V 10

V_GS 0

5 10 15 20 25 30 35 40 45 50 55 A 65

I_D

Typ. forward transconductance g_fs = f (I_D) parameter: t_p = 80 µs,

V_DS≥^{2 x I}D x R_DS(on)max

0 10 20 30 40 A 60

I_D 0

2 4 6 8 10 12 14 16 18 20 22 24 26 S 30

g_fs

(7)

Data Sheet 7 05.99

GS (th) j

parameter: V_GS = V_DS, I_D = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

VGS(th)

-60 -20 20 60 100 ˚C 160

T_j 2%

typ 98%

R_{DS (on)} = ƒ(T_j)

parameter: I_D = 21 A, V_GS = 10 V

-60 -20 20 60 100 ˚C 160

T_j 0.00

0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22

Ω

0.26

RDS (on)

typ 98%

Typ. capacitances C = f (V_DS)

parameter:V_GS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

V_DS 10 -2

10 -1

10 0

10 1

nF C

C_rss C_oss C_iss

Forward characteristics of reverse diode I_F = ƒ(V_SD)

parameter: T_j, t_p = 80 µs

10 0

10 1

10 2

10 3

A IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V_SD T_j = 25 ˚C typ

T_j = 25 ˚C (98%) T_j = 150 ˚C typ

T_j = 150 ˚C (98%)

(8)

Avalanche energy E_AS = ƒ(T_j) parameter: I_D = 33 A, V_DD = 50 V R_GS = 25 Ω, L = 1.09 mH

20 40 60 80 100 120 ˚C 160

T_j 0

100 200 300 400 500 600 mJ 800

E_AS

Typ. gate charge V_GS = ƒ(Q_Gate)

parameter: I_{D puls} = 50 A

0 20 40 60 80 100 120 140 nC 180

Q_Gate 0

2 4 6 8 10 12 V 16

V_GS

DS max

V

DS max 0,8 V 0,2

Drain-source breakdown voltage V_(BR)DSS = ƒ(T_j)

-60 -20 20 60 100 ˚C 160

T_j 180

185 190 195 200 205 210 215 220 225 230 V 240

V(BR)DSS