Pełen tekst

(1)

Data Sheet 1 05.99

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current TC = 28 ˚C

ID

33

A

Pulsed drain current TC = 25 ˚C

IDpuls

132

Avalanche current,limited by Tjmax IAR 33

Avalanche energy,periodic limited by Tjmax EAR 16 mJ

Avalanche energy, single pulse ID = 33 A, VDD = 50 V, RGS = 25 Ω L = 1.09 mH, Tj = 25 ˚C

EAS

790

Gate source voltage VGS ± 20 V

Power dissipation TC = 25 ˚C

Ptot

170

W

Operating temperature Tj -55 ... + 150 ˚C

Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC 0.74 K/W

Thermal resistance, chip to ambient RthJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

(2)

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C

V(BR)DSS

200 - -

V

Gate threshold voltage VGS=VDS, ID = 1 mA

VGS(th)

2.1 3 4

Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C

IDSS

- -

10 0.1

100 1

µA

Gate-source leakage current VGS = 20 V, VDS = 0 V

IGSS

- 10 100

nA

Drain-Source on-resistance VGS = 10 V, ID = 21 A

RDS(on)

- 0.06 0.07

(3)

Data Sheet 3 05.99

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics Transconductance

VDS 2 * ID * RDS(on)max, ID = 21 A

gfs

15 23 -

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

- 2600 3900

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

- 500 750

Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

- 230 350

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω

td(on)

- 40 60

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω

tr

- 110 170

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω

td(off)

- 450 680

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω

tf

- 160 240

(4)

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current TC = 25 ˚C

IS

- - 33

A

Inverse diode direct current,pulsed TC = 25 ˚C

ISM

- - 132

Inverse diode forward voltage VGS = 0 V, IF = 66 A

VSD

- 1.3 1.6

V

Reverse recovery time

VR = 100 V, IF=lS, diF/dt = 100 A/µs

trr

- 230 -

ns

Reverse recovery charge

VR = 100 V, IF=lS, diF/dt = 100 A/µs

Qrr

- 1.8 -

µC

(5)

Data Sheet 5 05.99 ID = ƒ(TC)

parameter: VGS ≥ 10 V

0 20 40 60 80 100 120 ˚C 160

TC 0

4 8 12 16 20 24 28 A 34

ID

Ptot = ƒ(TC)

0 20 40 60 80 100 120 ˚C 160

TC 0

20 40 60 80 100 120 140 W 180

Ptot

Safe operating area ID = ƒ(VDS)

parameter: D = 0.01, TC = 25˚C

10 -1

10 0

10 1

10 2

10 3

A

ID

10 0 10 1 10 2 V

VDS R DS(on)

= V DS / I D

DC

10 ms 1 ms 100 µs 10 µs 1 µs

tp = 350.0ns

Transient thermal impedance Zth JC = ƒ(tp)

parameter: D = tp / T

10 -3

10 -2

10 -1

10 0

K/W ZthJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp

single pulse

0.01 0.02 0.05 0.10 0.20 D = 0.50

(6)

Typ. output characteristics ID = ƒ(VDS)

parameter: tp = 80 µs

0 2 4 6 8 V 11

VDS 0

5 10 15 20 25 30 35 40 45 50 55 60 65 A 75

ID

VGS [V]

a a 4.0

b b 4.5

c c 5.0

d d 5.5 e

e 6.0 f

f 6.5 g

g 7.0 h

h 7.5 i

i 8.0 j

j 9.0 k

k 10.0

Ptot = 170W l

l 20.0

Typ. drain-source on-resistance RDS (on) = ƒ(ID)

parameter: VGS

0 10 20 30 40 50 A 65

ID 0.00

0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18

0.22

RDS (on)

VGS [V] = a 4.0 VGS [V] =

a 4.5 VGS [V] =

a

a 5.0

b

b 5.5

c

c 6.0

d

d 6.5

e

e 7.0

f

f 7.5

g

g 8.0

h

h 9.0

i

i 10.0

j

j 20.0

Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs

VDS2 x ID x RDS(on)max

0 1 2 3 4 5 6 7 8 V 10

VGS 0

5 10 15 20 25 30 35 40 45 50 55 A 65

ID

Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs,

VDS2 x ID x RDS(on)max

0 10 20 30 40 A 60

ID 0

2 4 6 8 10 12 14 16 18 20 22 24 26 S 30

gfs

(7)

Data Sheet 7 05.99

GS (th) j

parameter: VGS = VDS, ID = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

VGS(th)

-60 -20 20 60 100 ˚C 160

Tj 2%

typ 98%

RDS (on) = ƒ(Tj)

parameter: ID = 21 A, VGS = 10 V

-60 -20 20 60 100 ˚C 160

Tj 0.00

0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22

0.26

RDS (on)

typ 98%

Typ. capacitances C = f (VDS)

parameter:VGS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

VDS 10 -2

10 -1

10 0

10 1

nF C

Crss Coss Ciss

Forward characteristics of reverse diode IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 0

10 1

10 2

10 3

A IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Tj = 25 ˚C typ

Tj = 25 ˚C (98%) Tj = 150 ˚C typ

Tj = 150 ˚C (98%)

(8)

Avalanche energy EAS = ƒ(Tj) parameter: ID = 33 A, VDD = 50 V RGS = 25 Ω, L = 1.09 mH

20 40 60 80 100 120 ˚C 160

Tj 0

100 200 300 400 500 600 mJ 800

EAS

Typ. gate charge VGS = ƒ(QGate)

parameter: ID puls = 50 A

0 20 40 60 80 100 120 140 nC 180

QGate 0

2 4 6 8 10 12 V 16

VGS

DS max

V

DS max 0,8 V 0,2

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)

-60 -20 20 60 100 ˚C 160

Tj 180

185 190 195 200 205 210 215 220 225 230 V 240

V(BR)DSS

Obraz

Updating...

Cytaty

Updating...

Powiązane tematy :