BUZ330

Semiconductor Group 1 07/96

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type V_DS I_D R_DS(on) Package Ordering Code

BUZ 330 500 V 9.5 A 0.6

Ω

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current T_C = 28 °C

I_D

9.5

A

Pulsed drain current T_C = 25 °C

I_Dpuls

38

Avalanche current,limited by T_jmax I_AR 9.5

Avalanche energy,periodic limited by T_jmax E_AR 13 mJ

Avalanche energy, single pulse I_D = 9.5 A, V_DD = 50 V, R_GS = 25

Ω

E_AS

670

Gate source voltage V_GS

±

Power dissipation T_C = 25 °C

P_tot

125

W

Operating temperature T_j -55 ... + 150 °C

Storage temperature T_stg -55 ... + 150

Thermal resistance, chip case R_thJC

≤

Thermal resistance, chip to ambient R_thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at T_j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage V_GS = 0 V, I_D = 0.25 mA, T_j = 25 °C

V_(BR)DSS

500 - -

V

Gate threshold voltage V_GS=V_DS, I_D = 1 mA

V_GS(th)

2.1 3 4

Zero gate voltage drain current V_DS = 500 V, V_GS = 0 V, T_j = 25 °C V_DS = 500 V, V_GS = 0 V, T_j = 125 °C

I_DSS

- -

10 0.1

100 1

µA

Gate-source leakage current V_GS = 20 V, V_DS = 0 V

I_GSS

- 10 100

nA

Drain-Source on-resistance V_GS = 10 V, I_D = 6 A

R_DS(on)

- 0.45 0.6

Ω

Semiconductor Group 3 07/96

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics Transconductance

V_DS

≥

g_fs

5 9.3 -

S

Input capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_iss

- 1700 2300

pF

Output capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_oss

- 220 330

Reverse transfer capacitance V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_rss

- 95 140

Turn-on delay time

V_DD = 30 V, V_GS = 10 V, I_D = 3 A R_GS = 50

Ω

t_d(on)

- 23 45

ns

Rise time

V_DD = 30 V, V_GS = 10 V, I_D = 3 A R_GS = 50

Ω

t_r

- 95 145

Turn-off delay time

V_DD = 30 V, V_GS = 10 V, I_D = 3 A R_GS = 50

Ω

t_d(off)

- 340 450

Fall time

V_DD = 30 V, V_GS = 10 V, I_D = 3 A R_GS = 50

Ω

t_f

- 110 150

Electrical Characteristics, at T_j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current T_C = 25 °C

I_S

- - 9.5

A

Inverse diode direct current,pulsed T_C = 25 °C

I_SM

- - 38

Inverse diode forward voltage V_GS = 0 V, I_F = 19 A

V_SD

- 1 1.4

V

Reverse recovery time

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

t_rr

- 400 -

ns

Reverse recovery charge

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

Q_rr

- 6 -

µC

5 07/96 Semiconductor Group

D C

parameter: V_GS ≥ 10 V

0 20 40 60 80 100 120 °C 160

T_C 0

1 2 3 4 5 6 7 8 A 10

I_D

P_tot = ƒ(T_C)

0 20 40 60 80 100 120 °C 160

T_C 0

10 20 30 40 50 60 70 80 90 100 110 W 130

P_tot

Safe operating area I_D = ƒ(V_DS)

parameter: D = 0.01, T_C = 25°C

10 -1 10 0 10 1 10 2

A I_D

10 ⁰ 10 ¹ 10 ² V 10 ³

V_DS ^{R DS(on)}

= V ^DS / I D

DC 10 ms 1 ms 100 µs 10 µs tp = 4.0µs

Transient thermal impedance Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -3 10 -2 10 -1 10 0 10 1

K/W

Z_thJC

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse 0.01

0.02 0.05 0.10 0.20 D = 0.50

Typ. output characteristics I_D = ƒ(V_DS)

parameter: t_p = 80 µs

0 4 8 12 16 20 V 28

V_DS 0

2 4 6 8 10 12 14 16 18 A 22

I_D

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0 Ptot = 125W l

l 20.0

Typ. drain-source on-resistance R_{DS (on)} = ƒ(I_D)

parameter: V_GS

0 2 4 6 8 10 12 14 16 A 19

I_D 0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

Ω

1.8

R_{DS (on)}

V_GS [V] = a 4.0 V_GS [V] =

a

a 4.5

b

b 5.0

c

c 5.5

d

d 6.0

e

e 6.5

f

f 7.0

g

g 7.5

h

h 8.0

i

i 9.0

j

j 10.0

k

k 20.0

Typ. transfer characteristics I_D = f (V_GS) parameter: t_p = 80 µs

V_DS

≥

0 1 2 3 4 5 6 7 8 V 10

V_GS 0

1 2 3 4 5 6 7 8 9 10 11 A 13

I_D

Typ. forward transconductance g_fs = f (I_D) parameter: t_p = 80 µs,

V_DS

≥

0 2 4 6 8 A 12

I_D 0

1 2 3 4 5 6 7 8 9 10 11 12 13 S 15

g_fs

7 07/96 Semiconductor Group

GS (th) j

parameter: V_GS = V_DS, I_D = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

V_GS(th)

-60 -20 20 60 100 °C 160

T_j 2%

typ 98%

R_{DS (on)} = ƒ(T_j)

parameter: I_D = 6 A, V_GS = 10 V

-60 -20 20 60 100 °C 160

T_j 0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Ω

2.8

R_{DS (on)}

typ 98%

Typ. capacitances C = f (V_DS)

parameter:V_GS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

V_DS 10 -2

10 -1 10 0 10 1

nF C

C_rss C_oss C_iss

Forward characteristics of reverse diode I_F = ƒ(V_SD)

parameter: T_j, t_p = 80 µs

10 -1 10 0 10 1 10 2

A I_F

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V_SD T_j = 25 °C typ

T_j = 25 °C (98%) T_j = 150 °C typ

T_j = 150 °C (98%)

Avalanche energy E_AS = ƒ(T_j) parameter: I_D = 9.5 A, V_DD = 50 V R_GS = 25 Ω, L = 13.4 mH

20 40 60 80 100 120 °C 160

T_j 0

50 100 150 200 250 300 350 400 450 500 550 600 mJ 700

E_AS

Typ. gate charge V_GS = ƒ(Q_Gate)

parameter: I_{D puls} = 14 A

0 40 80 120 160 nC 240

Q_Gate 0

2 4 6 8 10 12 V 16

V_GS

DS max 0,8 V DS max

0,2 V

Drain-source breakdown voltage V_(BR)DSS = ƒ(T_j)

-60 -20 20 60 100 °C 160

T_j 450

460 470 480 490 500 510 520 530 540 550 560 570 580 V 600

V_(BR)DSS

Semiconductor Group 9 07/96 Package Outlines

TO-218 AA Dimension in mm