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Semiconductor Group 1 07/96

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 330 500 V 9.5 A 0.6

TO-218 AA C67078-S3105-A2

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current TC = 28 °C

ID

9.5

A

Pulsed drain current TC = 25 °C

IDpuls

38

Avalanche current,limited by Tjmax IAR 9.5

Avalanche energy,periodic limited by Tjmax EAR 13 mJ

Avalanche energy, single pulse ID = 9.5 A, VDD = 50 V, RGS = 25

L = 13.4 mH, Tj = 25 °C

EAS

670

Gate source voltage VGS

±

20 V

Power dissipation TC = 25 °C

Ptot

125

W

Operating temperature Tj -55 ... + 150 °C

Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC

1 K/W

Thermal resistance, chip to ambient RthJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

(2)

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

500 - -

V

Gate threshold voltage VGS=VDS, ID = 1 mA

VGS(th)

2.1 3 4

Zero gate voltage drain current VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C

IDSS

- -

10 0.1

100 1

µA

Gate-source leakage current VGS = 20 V, VDS = 0 V

IGSS

- 10 100

nA

Drain-Source on-resistance VGS = 10 V, ID = 6 A

RDS(on)

- 0.45 0.6

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Semiconductor Group 3 07/96

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics Transconductance

VDS

2 * ID * RDS(on)max, ID = 6 A

gfs

5 9.3 -

S

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

- 1700 2300

pF

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

- 220 330

Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

- 95 140

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

td(on)

- 23 45

ns

Rise time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

tr

- 95 145

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

td(off)

- 340 450

Fall time

VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50

tf

- 110 150

(4)

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current TC = 25 °C

IS

- - 9.5

A

Inverse diode direct current,pulsed TC = 25 °C

ISM

- - 38

Inverse diode forward voltage VGS = 0 V, IF = 19 A

VSD

- 1 1.4

V

Reverse recovery time

VR = 100 V, IF=lS, diF/dt = 100 A/µs

trr

- 400 -

ns

Reverse recovery charge

VR = 100 V, IF=lS, diF/dt = 100 A/µs

Qrr

- 6 -

µC

(5)

5 07/96 Semiconductor Group

D C

parameter: VGS ≥ 10 V

0 20 40 60 80 100 120 °C 160

TC 0

1 2 3 4 5 6 7 8 A 10

ID

Ptot = ƒ(TC)

0 20 40 60 80 100 120 °C 160

TC 0

10 20 30 40 50 60 70 80 90 100 110 W 130

Ptot

Safe operating area ID = ƒ(VDS)

parameter: D = 0.01, TC = 25°C

10 -1 10 0 10 1 10 2

A ID

10 0 10 1 10 2 V 10 3

VDS R DS(on)

= V DS / I D

DC 10 ms 1 ms 100 µs 10 µs tp = 4.0µs

Transient thermal impedance Zth JC = ƒ(tp)

parameter: D = tp / T

10 -3 10 -2 10 -1 10 0 10 1

K/W

ZthJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp

single pulse 0.01

0.02 0.05 0.10 0.20 D = 0.50

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Typ. output characteristics ID = ƒ(VDS)

parameter: tp = 80 µs

0 4 8 12 16 20 V 28

VDS 0

2 4 6 8 10 12 14 16 18 A 22

ID

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0 Ptot = 125W l

l 20.0

Typ. drain-source on-resistance RDS (on) = ƒ(ID)

parameter: VGS

0 2 4 6 8 10 12 14 16 A 19

ID 0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1.8

RDS (on)

VGS [V] = a 4.0 VGS [V] =

a

a 4.5

b

b 5.0

c

c 5.5

d

d 6.0

e

e 6.5

f

f 7.0

g

g 7.5

h

h 8.0

i

i 9.0

j

j 10.0

k

k 20.0

Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs

VDS

2 x ID x RDS(on)max

0 1 2 3 4 5 6 7 8 V 10

VGS 0

1 2 3 4 5 6 7 8 9 10 11 A 13

ID

Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs,

VDS

2 x ID x RDS(on)max

0 2 4 6 8 A 12

ID 0

1 2 3 4 5 6 7 8 9 10 11 12 13 S 15

gfs

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7 07/96 Semiconductor Group

GS (th) j

parameter: VGS = VDS, ID = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

VGS(th)

-60 -20 20 60 100 °C 160

Tj 2%

typ 98%

RDS (on) = ƒ(Tj)

parameter: ID = 6 A, VGS = 10 V

-60 -20 20 60 100 °C 160

Tj 0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

2.8

RDS (on)

typ 98%

Typ. capacitances C = f (VDS)

parameter:VGS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

VDS 10 -2

10 -1 10 0 10 1

nF C

Crss Coss Ciss

Forward characteristics of reverse diode IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

10 -1 10 0 10 1 10 2

A IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

VSD Tj = 25 °C typ

Tj = 25 °C (98%) Tj = 150 °C typ

Tj = 150 °C (98%)

(8)

Avalanche energy EAS = ƒ(Tj) parameter: ID = 9.5 A, VDD = 50 V RGS = 25 Ω, L = 13.4 mH

20 40 60 80 100 120 °C 160

Tj 0

50 100 150 200 250 300 350 400 450 500 550 600 mJ 700

EAS

Typ. gate charge VGS = ƒ(QGate)

parameter: ID puls = 14 A

0 40 80 120 160 nC 240

QGate 0

2 4 6 8 10 12 V 16

VGS

DS max 0,8 V DS max

0,2 V

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)

-60 -20 20 60 100 °C 160

Tj 450

460 470 480 490 500 510 520 530 540 550 560 570 580 V 600

V(BR)DSS

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Semiconductor Group 9 07/96 Package Outlines

TO-218 AA Dimension in mm

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