3 - T I O P r O flH H M3 K p /n H e Ü L U M X B M M pe nOCTOB- i m m k o b M 3 A e n n fi 3 n e K T p 0 H H 0 M n p o M b iL u n e H H O C T M . M 3 fle - n u a coBeTCKoft 3/ieKTpoHM KH, o 6 n a fla K 3 m n e B b icoK oü Hafle>KHOCTbw, nonb3yK)TC« 3acny>KeHHbiM y c n e x o M HO MHpOBOM p b lH K e .
K a T a / io r 3 h o k o m m t c TpaH3MCTopaMM, n p e fln a r a e -
MbiMM Ha SKcnopT BcecoK>3HbiM o6-beflMHeHMeM 3 J 1 0 P r.
B
K a T a n o re npM B efleH bi o 6 m n e CBefleHMH, nepTOKMc raôapMTHbiMM n npncoe,anHMTe/ibHbiMM pa3MepaMM,
ocHOBHbie TexHMHecKMe fla H H b ie m ycnoBM fl 3 K c n n y a -TOUMH TpaH3MCTOpOB.
K a T a n o r c o c t o m t m3 n e T b ip e x M a c re fi. M acT b
N ° 1 coflepwHT:
TpaH3M CTopbi M a n o ii m o lm h o c th HM3KOM MOCTOTbl, T paH 3M C T O pbl MOJIOM MOiHHOCTH
cp e flH e ü H a c T O T b i, TpaH3MCTOpbl H a n o ii HOOIHOCTM
BblCOKOM MOCTOTbl.
BcneflCTBHe H e n p e p b iB H o ro coBepweHCTBOBaHMfl 3 n e K T p o H H o ti TexHM KM n a p o M e T p b i p a f la M3,qe/iMii H o r y T OTflMMOTbCfl B /lyHlUyhO -CTOpOHy OT n pM 3S fle H H bl x
b K O T a /io re .
f7o eceM eonpocam cnedyem o6pou^ambc>t no adpecy:
CCCP, 121200, M o c k b o , T-200, C n o n e H C K a n - C e H H a a n n . 3 2 /3 4 ,
3nopr.
T e neipa$ Hbiü adpec: d flO P T MocKea, 200 TenetpOH: 2 5 1-39 -46
TeneKc: 7586
E L O R G is one o f the biggest suppliers o f items o f the electronic in d u stry in the w o rld .
The items o f the Soviet electronics fe a tu rin g a high re lia b ility a re w e ll know n on the w o rld m arket.
This C a ta lo g u e contains in fo rm a tio n on the tra n sistors offe re d fo r e x p o rt by the ELORG Vsesojuznoje O b jedinenie.
The C ata lo g u e gives the general data, d ra w in g s w ith the o v e ra ll and cou p lin g dim ensions, basic tech
nical characteristics and o p e ra tin g conditions o f tra n sistors.
The C ata lo g u e consists o f fo u r parts.
Part 1 com prises:
lo w -p o w e r low -frequency transistors ;
lo w -p o w e r m edium -frequency transistors ;
lo w -p o w e r h igh-frequency transistors.
Because o f continuous perfection o f the electronics, the param eters o f a n um ber o f items may d iffe r fo r the better fro m those given in the C atalogue.
A ll inquiries, p/ease, address lo :
ELORG, 32/34 Smolenskaja-Sennaja sq., Moscow G-200, 121200 USSR
Telegraph: ELORG, Moscow 200 Telephone: 251-39-46 Telex: 7586
© Vncshtorgizdat. 1978
A fl^ A B M T H b lM yKA3ATEJ1b PA3AEHOB K A T A J lO rA , TPAH3M CTOPbl“
ALPHABETICAL IN D E X OF CATALOGUE SECTIONS “ TRANSISTORS”
M A C T b P A R T
m h a e k c
I N D E X
T p a H 3 M C T O p b l
ManOM MOLUHOCTM HM3KOM H a C T O T b l L o w -p o w e r lo w -fre q u e n c y tra n s is to rs
1
iTpaH3MCTopbi M anoii
m o l u h o c t mcpeAHeii
H a c T O T b iL o w -p o w e r m e d iu m -fre q u e n c y tra n s is to rs
1
1TpaH3HCTopbi M anoii
m o l u h o c t uBbicoKoii
H a c T O T b iL o w -p o w e r h ig h -fre q u e n c y tra n s is to rs 1 , 2 «
TpaH3MCTOpbl CpeflHePi MOLUHOCTM HM3KOM HOCTOTbl M e d iu m -p o w e r lo w -fre q u e n c y tra n s is to rs
3 i
TpaH3MCTopbi cpeAHeii
m o l u h o c t mcpeAHeii HacTOTbi
M e d iu m -p o w e r m e d iu m -fre q u e n c y tra n s is to rs 3 f
TpaH3HCTOpbl CpeAHeii MOLUHOCTM BblCOKOM HOCTOTbl
M e d iu m -p o w e r h ig h -fre q u e n c y tra n s is to rs 3 (
T paH3MCTOpbl ÔOJIbUJOM MOLUHOCTM HM3KOM HOCTOTbl
H ig h -p o w e r lo w -fre q u e n c y tra n s is to rs 3 Ü
TpaH3MCTOpbl ÔOflbUJOM MOLUHOCTM CpeAHeii HOCTOTbl
H ig h -p o w e r m e d iu m -fre q u e n c y tra n s is to rs 3 |
TpaH3MCTOpbl ÔOflbUJOM MOLUHOCTM BblCOKOM HOCTOTbl
H ig h -p o w e r h ig h -fre q u e n c y tra n s is to rs 4 (
TpaH3MCTopbi noneBbie M anoii
m o l u h o c t mHM3Koii HacTOTbi
F ie ld -e ffe ct lo w -p o w e r lo w -fre q u e n c y tra n s is to rs 4 (
TpaH3MCTopbi noneBbie Manoü
m o l u h o c t mBbicoKoii HacTOTbi
F ie ld -e ffe ct lo w - p o w e r h ig h -fre q u e n c y tra n s is to rs 4 «
TpaH3MCTopbi noneBbie 6onbLUoPi
m o l u h o c t m b m c o k o mHacTOTbi
F ie ld -e ffe ct h ig h -p o w e r h ig h -fre q u e n c y tra n s is to rs 4 ( 1
1
FlEPEMEHb TPAH3MCTOPOB, flO M E lH E H H blX B HACTM 1 LIST OF TRANSISTORS DESCRIBED IN PART 1
T P A H 3 M C T O P b l M A J I O M M O L L J H O C T M H M 3 K O M H A C T O T b l
L O W - P O W E R L O W - F R E Q U E N C Y T R A N S IS T O R S
C T p .
P a g e
IT108A . . m o s r 8
m 0 9 A . .IT109M 10 m i 5 A . J T 1 1 5 fl 13 KT104A . . . K T 1 0 4 r 15 KT117A . . .KT117r 20
KT118A ...KT118B 24
KT119A ..KT119B 27
MF120A . .MI121E 31
M n 2 5 .. .M n266 34 M n 3 5 .. .M n38A 38 M n 3 9 .. .MI141A 41 M n 4 2 .. .M ri425 44 M m n . ..M m i3 A 47 M m i 4 . . . M m i6 51
n 2 7 ...n 2 8 54
E
T P A H 3 M C T O P b l M A J I O M M O U J H O C T M C P E f lH E M M A C T O T b lL O W - P O W E R M E D I U M - F R E Q U E N C Y T R A N S IS T O R S
KT201A ... KT201 /} 58 KT203A .. .KT203B 62 KT206A, KT206B 65
Î129 .. .1130 68
I1307 .. .11309 72
T P A H 3 M C T O P b l M A J I O M M O U J H O C T M B b lC O K O M M A C T O T b l L O W - P O W E R H I G H - F R E Q U E N C Y
T R A N S IS T O R S
C T p . P age
T T 3 0 5 A . J T 3 0 5 B 78
I T 3 0 8 A . J T 3 0 8 B 81
I T 3 0 9 A . T T 3 0 9 E 85
1 T 3 1 0 A . T T 3 1 0 E 89
T T 3 1 1 E . . . I T 3 1 1 M 93
I T 3 1 3 A . J T 3 1 3 B 9 7
T T 3 2 0 A . J T 3 2 0 B 1 0 0
T T 3 2 1 A ..T T 3 2 1 E 1 0 6
r T 3 2 2 A .. T T 3 2 2 B 111
T T 3 2 8 A . .T T 3 2 8 B 1 1 4
I T 3 2 9 A . , r T 3 2 9 r 1 1 7
r T 3 3 0 f l . . I T 3 3 0 M 1 2 2
r T 3 3 8 A . T T 3 3 8 B 1 2 5
T T 3 4 1 A . X T 3 4 1 B 1 3 0
r T 3 4 6 A , T T 3 4 6 B 1 3 2
r T 3 6 2 A , IT 3 6 2 E 1 3 5
2
nO^CHEHM^ K K A T A n o ry EXPLANATIONS TO CATALOGUE
T paH 3H C T opbi b Ka>KAOM p a 3 fle n e p a c n o n o w e H b i b a n cjja- b m t h o m nopyiAKe m b n o p s flK e B 0 3pacraH M fl UMcjjp, co - cT aB JiflK 3 i4 nx y c /io B H o e o6o3H aneH M e npM Ö opoB.
Y cn o B H o e o6o3H aneH M e TpaH3MCTopoB :
BAPWAHT I
rip n M e p , TT108A
I l e p B b i i i 3/ieM eH T o 6 o 3 H a n a e T M cxoA H biti n o n y n p o B O A - H M KO BbiM M a T e p n a /1 , M3 K O T O p o r o M 3 r 0 T 0 B /ie H n p M 6 o p :
T — re p M G H M M m h m c o e A M H e H M e r e p M O H M f l;
K
— K peM H M M MJ1M C O e flM H e H M fl K p e M H M H . B T o p o i i a n e M e H T o n p e A e n a e T n o A K n a c c n p M Ô o p a :T — T p Q H 3 M C T O p b l (3Q M C K n iO H e H M e M n o n e B b i x T p a H 3 M C T o p o ß ) ;
I l — TpaH3M CTopbi n o n e B b ie
T p e T M ii 3/i6M eHT o n p e fle n a e T Ha3HQneHMe n p M 6 o p a .
TpaH3M CTopbi ( 3 a HCKmoHeHneM n o n e B b ix TpaH3MC- T o p o ß )
T p Q H 3 M C T O p b l M a jlO M MOLUHOCTM (Pc m a x < 0 .3 W ) : 1 — HM3KOM H Q C T O T bl
( fT < 3 M H z ) 2 — e p e f lH e Ü H Q C T O T bl
(3 M H z < f T < 3 0 M H z ) 3 — BblCOKO M H a C T O T b l
( f T> 3 0 M H z )
TpaH3M CTopbi c p e flH e ii
mouhhoctm( 0,3 W < P c m« < 1 , 5 W )
4 — HM3KOM H a C T O T b l ( f T < 3 M H z ) 5 — C p e A H e ii H Q C T O T bl
(3 M H z < f r < 3 0 M H z ) 6 — BblCOKO M H a C T O T b l
( fT > 3 0 M H z )
T p a H 3 M C T O p b l
6 o n b U lo ii
M O L U H O C T M( P c ma x> 1 .5 W ) :
7 — HM3KOM H a C T O T b l
( fT < 3 M H z ) 8 — C p e A H e ii H Q C T O T bl
(3 M H z < f T < 3 0 M H z ) 9 — BblC O KO M H a C T O T b l
( f T > 3 0 M H z )
T
p Q H 3 M C T o p b i n o n e B b i e1 — T p a H 3 M C T o p b i n o n e B b i e M a n o i i m o l l j h o c t m ( P m a x < 0 , 3 W )
HM3KOM H a C T O T b l (/max < 3 M H Z )
2 — T p a H 3 M C T o p b i n o n e B b i e m o h o m m o u j h o c t m
(P m a x< 0 ,3 W )
BblC OKO M H Q C T O T b l ( f ma x > 3 0 M H z )
M e T B e p T b iii m n s T b i i i s n e i i e H T b i o n p e A e n a i o T n o p H A K O - B biM H O M e p p a 3 p a 6 o T K M T e x H O J io r M H e c K o r o T M n a n p M Ö o p a m o 6 o 3 H a n a K ) T C f l o t 1 a o 9 9 .
LLIecTO M s n e n e H T o n p e A e n a e T A e n e H M e T e x H o n o r M H e c K o r o T M n a H a n a p o M e T p M H e c K M e r p y n n b i m o 6 o 3 H a H a e T c a 6 y K B Q M M
pyccKoro
a n c f> a B M T a .T ransistors in each section are a rra n g e d in alp h a b e tica l o rd e r and in the o rd e r o f increase o f the fig u re s m aking up the designation o f the devices.
D esignation o f tra n sisto rs:
VERSION I
F o r e x a m p le , T T 1 0 8 A
The firs t elem ent stands fo r the source sem iconductor m a te ria l the device is made of.
f — g e rm a n iu m o r g e rm a n iu m com pounds;
K — silicon o r silicon compounds.
The second elem ent determ ines the subclass o f the device : T — transistors (b u t fo r the fie ld -e ffe ct transistors) ;
FI — fie ld -e ffe ct transistors
The th ird elem ent determ ines the device designation.
T r a n s is t o r s ( b u t f o r th e fie ld - e ffe c t t r a n s is t o r s )
L o w -p o w e r transistors (Pc max<0-3 W ) 1 — lo w frequency
( f T< 3 MHz) 2 — medium frequency
(3 M H z ^ f T< 3 0 MHz) 3 — high frequency
( f T> 30 MHz) M e d iu m - p o w e r tr a n s is t o r s (0.3 W < P C ma x<1 -5 W )
4 — lo w frequency (fT< 3 M Hz 5 — medium frequency
(3 M H z < f T< 3 0 MHz) 6 — high frequency
( / » 30 MHz)
H ig h - p o w e r tr a n s is t o r s (Pc ma x>1-5 W ) : 7 — lo w frequency
( f r < 3 MHz) 8 — m edium frequency
(3 M H z < f r < 3 0 MHz) 9 — high frequency
( f T> 3 0 MHz) F ie ld -e ffe c t tr a n s is t o r s
1 — field-effect lo w -p o w e r transistors
(Pmax < 0 . 3 W )lo w frequency
( fm a x < 3M H Z )
2 — fie ld -e ffe ct lo w -p o w e r transistors (Pm0x < 0.3 W )
high frequency ( f max> 30 MHz)
The fo u rth and fifth elements d e te rm in e the o rd in a l nu m b er o f the device technological type and are designat
ed fro m 1 to 99.
The sixth elem ent defines the division o f the technological type in to p a ra m e tric groups and is designated w ith the letters o f the Russian alphabet.
3
B A P H A H T II VERSION II
rip u rie p , M n i1 4 F o r e x a m p le , M n i1 4
r i e p B b i f i 3 /ie M e H T o 6 o 3 H a H e H M H — 6 y K B a n
( M il)
a h a T p a H 3 M C T O p O B .BTopoii 3 /ie M e H T o 6 o 3 n a H e H M H — h m c /io , yK a 3 biB aK > LJu e e n o p f lf l K O B b if i H O M e p T H n a n p n 6 o p a :
1 — 1 0 0 — T p a H 3 M C T o p b ! re p M a H M e B b ie M a n o fi m o ih- HOCTM HM3KOM MOCTOTbl,
1 0 1 — 200 — TpQH3MCTopbi KpeMHMeBbie M a n o i i MOU4- HOCTM HM3KOÎÎ MOCTOTbl,
2 0 1 — 3 0 0 — T p a H 3 M C T o p b i r e p M a H M e B b ie ô o n b t u o i i m o ih- HOCTM HM3KOM M O C T O T b l,
3 0 1 — 4 0 0 — TpQ H 3M CTO pb! K p e M H M e B b ie 6 0/IbLUOM MOU4- HOCTM HM3KOM MOCTOTbl,
4 0 1 — 5 0 0 — T p a H 3 M C T o p b t r e p M a H M e B b ie M a n o i i m o l u- HOCTM BblCOKO M M O C T O T b l,
6 0 1 — 7 0 0 — T p a H 3 M C T o p b i repMaHMeBbie 6 o n b t u o M m o ih- HOCTM BblCOKO M M O C TO Tbl
7 0 1 — 8 0 0 — T p a H 3 M C T o p b i K p e M H M e B b ie ô o n b L U O M m o i m- HOCTM BblCOKOM M O C TO Tbl
The firs t elem ent o f the d esignation — le tte r n ( M il) fo r transistors.
The second elem ent o f the designation — the num ber in d ica tin g the o rd in a l n u m b e r o f the device typ e :
1 — 100 — g e rm a n iu m lo w -p o w e r lo w -fre q u e n cy tra n sistors,
101— 200 — silicon lo w -p o w e r low -fre q u e n cy transistors,
2 01— 300 — g e rm a n iu m h ig h -p o w e r low -fre q u e n cy tra n sistors,
301— 400 — silicon h ig h -p o w e r low -frequency transistors,
401— 500 — g e rm a n iu m lo w -p o w e r high -fre q u e n cy tra n sistors,
601— 700 — g e rm a n iu m h ig h -p o w e r high-frequency tra n sistors,
701— 800 — silicon h ig h -p o w e r h igh-frequency tra n sistors.
4
nPOMME CBE/HEHMfl OTHER DATA
B K O T a n o r e npeACTOBneHbi rp a cj> M K H 3aBHCHMOCTeS ocHOBHbix nap a M e T p oB .
T p a (J)H K M 3Q B M C M M o c T e fi A B n flto T C fi T tin o B b iM M M n o n y n e H b i HQ OCHOBOHMM CTOTMCTM M eCKM X A O H H b lX .
H a r a6a p M T H b ix H e p T e w a x 3 n e K T p o f l b i o 6 o 3H a H e H b i ö y K B O M n : T p a H 3M C T O p b l ( 3a M C K H tO M e H H e M n O / ie B b lX T p a H 3M C T O p O B ):
£ — 3 M M T T e p , C — K o n n e K T o p ,
ß — 6 a 3a ,
C a s e — K o p n / c
T p o H s H C T o p b i n o n c B b i e : S — HCTOK,
D — CTOK, G — 3d T B O p , ß — n o f l n o w K a
Y cT O M M M B O C T b K BHGLL1HHM B0 3 A SM C TBM SM ( e C ilH H e y K 0 3 0 H 0 0C0 6 0) :
B H Ô p a u H H B f l H a n a 3 0 H e h q c t o t o t 1 0 a o 6 0 0 H z c y c K o p e H M e r i A O 1 0 g ,
M H o r o K p Q T H b ie y A a p b i c ycKopeHMCM a o 75 g, n v iH C M H b ie Harpy3KM c ycKopeHMeM a o 2 S g,
oTHOCMTenbHdH B/iQjKHOCTb B03Ayxa a o 9 8 % n p w T e iin e p a - Type a o + 4 0 ° C ,
A a s n e H H e o i < p y « a i o t i i e i i c p e A b i o t 2 ,7 • 1 0 * a o 3 • 1 05 H / m 2 . 3 n e K T p M M e c K n e n a p 'a M 'e T p b i T p a H 3 M C T o p o s n p w B O A S T c n n p n T e M n e p a T y p e o K p y w a i o m e i i c p e A b i t a m ¡ , = 2 5 + 1 0 ° C c y K Q 3Q H M eM P O K M M O B , B K O T O p b IX n p O M 3 B O A H ilH C b M3M e p e H H H .
H a r p a c f w u a x n p t iH H T b i c n e A y r o m t i e o 6 o 3H a H e H M n :
T M n O B b i e X a p a K T e p M C T H K H , --- r p a H M U b i 9 5 % - r o p a s ô p o c a .
T h e C a ta lo g u e ¡Ilú stra le s the g ra p h s s h o w in g th e re la tio n s bet
ween the basic p a ra m e te rs.
T he gra p h s a re s ta n d a rd , they a re o b ta in e d on the bases o f statistic data.
T h e electrodes on the o u tlin e d ra w in g s a re designated w ith the fo llo w in g le tte rs:
T ra n s is to rs (b u t fo r the fie ld -e ffe c t tra n s is to rs ):
c — e m itte r, C - c o lle c to r, B - base, Case
F ield-effect tra n sisto rs S - source, D - d ra in , G - gate, B — substrate
Resistance to e x te rn a l effects ( if no t o th e rw is e spe cified ):
v ib ra tio n w ith in fre q u e n cy ra n g e fro m 10 to 600 H z a t an accele
ra tio n up to 10 g;
m u ltip le im pacts at an a cce le ra tio n up to 75 g;
lin e a r a cce le ra tio n up to 25 g;
re la tiv e a i r h u m id ity up to 98% c t a te m p e ra tu re o f + 4 0 ° C ; s u rro u n d in g m e dium pressure fro m 2.7 • 10* to 3 • 105 H /m ! .
T h e tra n s is to r e le c tric a l p a ra m e te rs ha ve been m easured at a m b ie n t te m p e ra tu re tamb = 25 + 10° C , and the o p e ra tin g c o n d itio n s in w h ic h m easurem ents have been ta ke n a re m e n tio n e d .
T h e fo llo w in g d e sig nation s a re used on the g ra p h s : sta n d a rd ch a ra c te ris tic s , b o u n d a rie s o f 95 % spread.
Y K A 3 A H M fl II O Ü PH M E H E H M K )
M 3 K C n n y A T A l 4 W M
H e p a 3 p e u ja e T C f l H c n o / ib 3 0 B a T b T p a H 3 n c T o p b i b c o B M e m e H H b ix M a K C H M a n b H O A o n y c T H M b i x p e w H M a x ; p a c n o n a r a T b m x b 6 jih 3 m H a r p e B a h o m w x c i i B tie M e H T O B c x e M b i;
n p e B b i i u a T b M a K C H M a n b H O A o n y c T H M b ie 3 H a n e H M H t o k o , H a n p n > K e - HM R, MOLMHOCTM, T e n n e p a T y p b i; B K n t o n a T b T p a H 3 n c T o p b t b cxeMy w B b lK /H O H O T b n p M n O A K D IO H e H H b lX M C TO H H M KO X n MTOHKfl.
rip » 3KcnnyaTai4MH TpamHCTopoB b ycnoBHflx MexannnecKHX B03ACÜCTBHÍÍ mx HeoôxoAHMo KpennTb 30 Kopnyc.
f ln t i noBbiiueHna HaAewHocTH peKOMeHAyeTc* HcnoribsoBaTb TpaH3HCTOpb! B pCÎKM MQX HM>Ke npeAe/lbHO AOnyCTMMbIX H a20. . .3 0 % .
H e peKOMeHAyeTCfl 3KCnnyaTMpoBaTb TpaH3ncropbi npw p a 6o-
HHX T O K a X , COM3MepHMblX C HeynpQBnfleMblMM o6paTHblMM TOKOMM
bo B C e M Anana30He TeMnepaTyp.
flp n paôoTe b ycnOBHax H3MeHeHH^ T ennepaT ypbi oxpyxtaioLMeii cpeAbi peKOMeHAyeTca npeAycMQTpuBOTb TeMnepaTypHyto cra 6m iM - 3QUM K) B cxeM ax.
rip n M 3 r n 6 e B b lB O A O B A O / lïK H b l Ô b IT b n p M H S T b l M e p b l n p e A O C T O - p o w H o c T H , o 6 e c n e H M B a K > m H e H e n o A B M W H O C T b B b iB O A a M e « A y m c c t o m M 3 rM 6 a h K o p n y c o M , m H C K / ir a n a x s m H e H a p y w e H n e r e p M e T M H H o c T u Kopnyca.
KaTeroptiHecKH 3a n p e m a e T C « K p y n e H w e BblBOAOB B O K p y r o c u . rip n BKnHDHeHHH TpaH3HCTOpOB B SneKTpMHeCKyK) uenb, Ha- x o A n u jy io c f l n o A HanpsjKeHMeM, KonneKTopHbivi BbiBOA Aon>KeH noAKntoHOTbcn nocneAHMM m OTKntonaTbca nepBbrn.
ripM
n a Ü K e BblBOAOB AO/IJKHO 6blTb M C KJltO H eH Q B03M0)KH0CTb n p o T e K O H M fl t o k o ne p e i T p a H 3 M c r o p h oôecneneH H O A e w tH b iR o tb o a Tenna o t MecTa naiÍKH k Kopnycy. H e06
x0
AMM0
33mMmaTb Kopnyc T p a H 3M C T o p a o t n o n a A O H M S 4>nroca.INSTRUCTIONS O N USE
N e v e r use th e tra n s is to rs u n d e r c o m b in e d m a x im u m a llo w a b le c o n d itio n s ; p o sitio n them n e a r th e c irc u it h e a tin g c o m p o n e n ts; exceed m a x im u m a llo w a b le values o f c u rre n t, vo lta g e , p o w e r, te m p e ra tu re ; c u t in the tra n s is to rs in the c irc u it and cu t the m o u t, w ith the p o w e r sources connected.
W h e n the tra n sisto rs a re em ployed u n d e r the c o n d itio n s o f m e ch a n ica l effects, be sure to secure the m by the case.
T o im p ro v e the re lia b ility o f tra n s is to rs , it is re com m e nde d to use them u n d e r o p e ra tin g c o n d itio n s 2 0 — 3 0 % lo w e r then the m a x im u m a llo w a b le ones.
It is no t recom m e nde d to e m p lo y the tra n s is to rs , w ith the o p e ra t
in g c u rre n ts co m m e n s u ra b le w ith n o n -c o n tro lle d fee dba ck cu rre n ts w ith in the e n tire te m p e ra tu re ra n g e .
In o p e ra tio n u n d e r th e c o n d itio n s o f a m b ie n t te m p e ra tu re v a r ia tio n , it is re com m e nde d to p ro v id e te m p e ra tu re s ta b iliz a tio n in the c irc u its .
W h e n b e n d in g the leads, ta ke p re ca u tio n s to ensure the fie ld p o sitio n o f the lead betw een the p o in t o f b e n d in g and the case and a v o id d e te rio ra tio n o f th e case sea ling.
NEVER tw is t the leads a ro u n d the a xis. W h e n c u ttin g in the tra n s is to rs in an en e rg ize d e le c tric c irc u it, see th a t the c o lle c to r lead is connected last and disconnected firs t.
W h e n s o ld e rin g the leads, a v o id flo w o f c u r re n t th ro u g h the tra n s is to r and p ro v id e re lia b le he at re je c tio n fro m th e p o in t o f so l
d e rin g to the case. P rotect the tra n s is to r case fro m flu x .
y C n O B H fl XPAHEHW-fl STORAGE CO N D ITIO N S
TpaH 3M cTopbi A onxcH bi xpaHMTbCH Ha c x n a A e b MHTepBane T e M n e p a T y p o t 5 a o 85 °C , oTH ocM TeribH oíi b/io w h o c t m B03Ayxa He 6 o n e e 8 5 % m npw oTcyrcTBM H b B03Ayxe a rp e c c H S H b ix n pH M eceñ.
T ra n s is to rs sho uld be stored at depots at te m p e ra tu re s ra n g in g fro m 5 to 85° C , the re la tiv e a i r h u m id ity n o t e xce e d in g 8 5 % and the a i r no t c o n ta in in g ag gressive a d m ix tu re s .
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